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PUBLICATION LIST_Hsuan-ling Kao

Journal articles & book chapters:

  1. H. L. Kao and T. Chang, "Integrated the Inductors on Ultra Thin Si-Substrate to Improve the RF Performance for Low Noise Amplifier Applications," was accpeted on Microwave and Optical Technology Letters(MOT), 2010. (CGU, SCI=0.743, 144/229)
  2. T. Chang, Y. J. Chen, H. L. Kao, and Albert Chin, "Device Modeling and RF Power Amplifier Implementation Using High Power-Density Asymmetric-LDD MOSFET," was accpeted on Solid State Electronics(SSE), 2010. (CGU, SCI=1.422, 81/229)
  3. T. Chang, Hsuan-ling Kao, Y. J. Chen, and Albert Chin, "Improved RF Power Characteristics of CMOS-Compatible Asymmetric-Lightly-Doped-Drain Metal-Oxide-Semiconductor Transistor," in Journal of Japan Applied Physics (JJAP), vol. 49, no. 3, 2010, pp.. (CGU, SCI=1.247, 50/94)
  4. T. Chang, Hsuan-ling Kao, S. L. Liu, Joseph D.S. Deng, K. Y. Horng, and Albert Chin, "Radio Frequency Power Performance Enhancement for Asymmetric- Lightly-Doped-Drain Metal-Oxide-Semiconductor Field-Effect Transistors on SiC-Substrate," in Journal of Japan Applied Physics (JJAP), vol. 49, no. 1, 2010, pp.014104-1-104104-4. (CGU, SCI=1.247, 50/94)
  5. Hsuan-ling Kao, Chia-Ling Lu, and Yung-Cheng Chang, "Radio Frequency Performance Improvement with Drain bias and Limiting Factors of 65-nm-node Radio Frequency Metal-Oxide-Semiconductor Field-Effect Transistors," in Journal of Japan Applied Physics (JJAP), vol. 48, 2009, pp.011204. (CGU, SCI=1.247, 50/94)
  6. Jeffrey S. Fu, Dong-Hua Yang, Chin-I Yeh, Hsien-Chin Chiu, Kuo-Sheng Chin, Hsuan-Ling Kao and Jui-Ching Cheng, "Non-uniform Chebyshev Distributed Chirped Dumbbell-Shaped Photonic Bandgap Structure (PBGs) Low Pass Filter," COMPEL-International Journal For Computation and Mathematics in Electrical and Electronic Engineering, USA, 2010, pp. 295-305. (CGU, SCI=0.441, 178/229)
  7. H.-L. Kao, D. Y. Yang, C. H. Kao, Y. C. Chang and B. S. Lin, "Switched Resonators using Adjustable Inductors in a 2.4/5 GHz Dual-Band LC VCO," in IEE Electronics Letters (EL), Vol. 44, Issue 4, 2008, pp.299-301. (CGU, SCI=1.009, 86/227)
  8. H. L. Kao and K. C. Chang, "Very Low-Power CMOS LNA for UWB Wireless Receivers using Current-Reused Topology,"in Solid State Electronics(SSE), vol. 52, Issue 1, 2008, pp.86-90. (CGU, SCI=1.259, 63/227)
  9. T. Chang, H. L. Kao, S. P. McAlister, K.Y. Horng and Albert Chin, "Improved RF Power Performance in a 0.18- m MOSFET which uses an Asymmetric Drain Design," in IEEE Electron Device Letters (EDL), Vol. 29, no. 12, 2008, pp. 1402-1404. (CGU, SCI=2.486, 9/227)
  10. W.-J. Tsai, T.-F. Ou, H.-L. Kao, E.-K. Lai, J.-S. Huang, L.-H. Chong, Y.-Y. Liao, S.-P. Hong, M. T. Wu, S. C. Tsai, C.-H. Leng, F.-H. Hsu, S.-Y. Wang, C.-M. Cheng, T. Luoh, Y. T. Hung, S. A. Luo, C. H. Huang, T.-C. Lu, T. Yang, K.-C. Chen, and C.-Y. Lu, "A Novel Trapping-Nitride-Storage Non-Volatile Memory Cell Using a Gated-Diode Structure with an Ultra-Thin Dielectric Dopant Diffusion Barrier," in IEEE Transactions on Electron Devices (TED), Vol. 55, Issue 8, Aug, 2008, pp. 2202-2211. (MXIC, SCI=2.165, 20/227)
  11. Hsuan-ling Kao and C. C. Liao, "Direct Measurement of low noise 90 nm Node RF MOSFETs using New layout," in Journal of Japan Applied Physics (JJAP), Vol. 46, No. 6A, June 2007, pp.3330-3333. (CGU, SCI=1.247, 50/94)
  12. H. L. Kao, C. H. Kao, Albert Chin, and C. C. Liao, "Calibration 90 nm Node RF MOSFETs, Including Stress Degradation", in Microwave and Optical Technology Letters, Vol. 49, Issue 3, March 2007, pp. 604-607. (CGU, SCI=0.631, 130/227)
  13. Bing-Fang Hung, Chia-Chung Chen, Hsuan-Ling Kao, and Albert Chin, "High-Performance Radio Frequency Passive Devices on Plastic Substrates for Radio Frequency Integrated Circuit Application," in Journal of Japan Applied Physics (JJAP), Vol. 46, No. 4B, April 2007, pp.2758-2760. (CGU, SCI=1.247, 50/94)
  14. K. C. Chiang, J. W. Lin, H. C. Pan, C. N. Hsiao, W. J. Chen, H. L. Kao, I . J . Hsieh, and Albert Chin, "Very High Density (44 fF/mm2) SrTiO3 MIM Capacitors for RF Application," in J. Electrochem. Soc.(JES), vol. 154, p. H214-H216, 2007. (CGU, SCI=2.387, 1/16)
  15. H. L. Kao, Albert Chin, C. C. Liao, C. C. Chen, S. P. McAlister and C. C. Chi, "Electrical Stress Effects and Device Modeling of 0.18 m RF MOSFETs," in IEEE Transactions on Electron Devices (TED), Vol. 53, Issue 4, April, 2006, pp. 636-642. (NCTU, SCI=2.052, 23/206)
  16. Albert Chin, H. L. Kao, C. H. Kao, C. C. Liao, Y. Y. Tseng, C. C. Chi, "Strain enhanced DC-RF performance of 0.13 m nMOSFETs on flexible plastic substrate" in IEE Electronics Letters (EL), Vol. 42, Issue 14, July, 2006, pp. 827-828. (NCTU, SCI=1.063, 69/206)
  17. C. C. Chen, H. L. Kao, Albert Chin, "Electric stress effect on DC-RF performance degradation of 0.18 m MOSFETS ", in Microwave and Optical Technology Letters, Vol. 48, Issue 10, July, 2006, pp. 1916-1919. (NCTU, SCI=0.568, 125/206)
  18. C. C. Chen, H. L. Kao, A. Chin, S. P. McAlister and C. C. Chi, "AC Power Loss and Signal Coupling in VLSI backend Interconnects," in Journal of Japan Applied Physics (JJAP), 2006, pp. 2992-2996. (NCTU, SCI=1.222, 39/84)
  19. C. C. Chen, H. L. Kao, K. C. Chiang, A. Chin, "A Parallel Coupled-Line Filter Using VLSI Backend Interconnect with High Resistivity Substrate," in International Journal of Infrared and Millimeter Wave (IRMMW), 2006, pp. 93-105. (NCTU, SCI=0.326, 156/206)
  20. C. C. Huang, K. C. Chiang, H. L. Kao, Albert Chin, and W. J. Chen, “RF TaN/SrTiO3/TaN MIM Capacitors with 35 fF/m2 Capacitance Density,”in IEEE Microwave & Wireless Components Lett. (MWCL), 2006, pp. 493-495. (CGU, SCI=1.424, 47/206)
  21. K. C. Chiang, C. C. Huang, G. L. Chen, W. J. Chen, H. L. Kao, Y. H. Wu, Albert Chin and S. P. McAlister, “High Performance SrTiO3 Metal-Insulator-Metal Capacitors for Analog Applications,”in IEEE Trans. Electron Devices (TED), 2006, pp. 2312-2319. (CGU, SCI=2.052, 23/206)
  22. D. S. Yu, H. L. Kao, Albert Chin, and S. P. McAlister, "Performance and potential of germanium on insulator field-effect transistors," in J. Vacuum Science Tech. A (JVST), 2006, pp. 690-693. (NCTU, SCI=1.394, 35/84)
  23. H. L. Kao, B. F. Hung, Albert Chin, J. M. Lai, C. F. Lee, S. P. McAlister, and C. C. Chi, "Very Low Noise RF nMOSFETs on Plastic by Substrate Thinning and Wafer Transfer," in IEEE Microwave and Wireless Components Letters (MWCL), Vol. 15, Issue 11, Nov. 2005, pp.757-759. (NCTU, SCI=1.474, 43/208)
  24. H. L. Kao, Albert Chin, B. F. Hung, C. F. Lee, J. M. Lai, S. P. McAlister, G. S. Samudra, Won Jong Yoo and C. C. Chi, "Low Noise RF MOSFETs on Flexible Plastic Substrates," in IEEE Electron Device Letters (EDL), Vol. 26, Issue 7, July 2005, pp. 489-491. (NCTU, SCI=2.825, 7/208)

Conference & proceeding papers:

  1. C. M. Yang, H. L. Kao, Y. C. Chang, M. T. Chen, H. M. Chang and C. H. Wu, "A Low Phase Noise 20 GHz Voltage Control
  2. Oscillator using 0.18-μm CMOS Technology,"was accepted onIEEE Symposium on Design and Diagnostics of Electronic Circuits and Systems (DDECS) , April 2010. (CGU) (student paper, EI)
  3. C. H. Wu, H. L. Kao, Y. C. Chang, C. H. Kao, M. H. Chen, C. H. Yang, and B. S. Lin, "A Wideband 0.18μm CMOS LNA with RC-Feedback Topology for UWB Applications," in IEEE NEWCAS-TAISA'09, June 2009. (CGU, EI)
  4. Y. C. Chang, H. L. Kao, C. H. Kao C. H. Yang Jeffrey S. Fu, Nemai C. Karmakar, and L. C. Chang, "A 0.18 um CMOS UWB LNA with New Feedback Configuration for Optimization Low Noise, High Gain and Small Area," inIEEE Symposium on Design and Diagnostics of Electronic Circuits and Systems (DDECS) , April 2009. (CGU) (student paper, EI)
  5. H. L. Kao, B. S. Lin, C. C. Liao, M. H. Chen, C. H. Wu, and Albert Chin, "Limiting Factors of RF Performance Improvement as Down-scaling to 65-nm Node MOSFETs," in Korea-Japan MicroWave Conference (KJMW) , April 2009. (CGU)
  6. H. L. Kao, Y. C. Chang, C. H. Kao, B. S. Lin, M. H. Chen, and C. H. Wu, "Design of Low Noise, High Gain and Small Area 0.18 um CMOS UWB LNA using New RC-Feedback Topology," in Korea-Japan MicroWave Conference (KJMW) , April 2009. (CGU)
  7. Li-Chun Chang, Cheng-Huan Yang, Hsuan-ling Kao, and an-Bean Wu, "Using High Work Function Ni Metal to Improve the Stress Reliability of CaCu3Ti4O12 MIM capacitors," in ICMCTF, 2009.
  8. 張麗君, 楊承桓, 高瑄苓,"高功函數金屬電極應用於CaCu3Ti4O12電阻轉換特性之研究," 2009年中國材料科學學會年會.
  9. T. Chang, H. L. Kao, Y. J. Chen, S. L. Liu, S. P. McAlister, and Albert Chin, "A CMOS-Compatible, High RF Power, Asymmetric-LDD MOSFET with Excellent Linearity," was accepted on Int. Electron Devices Meeting (IEDM) Tech., Dec. 2008. (CGU)
  10. H. L. Kao, Y. C. Chang, B. S. Lin, M. H. Huang, and C. H. Kao, "Bending Effect of Si MOSFETs on Flexible Plastic Substrate," in 7th IEEE International Caribbean Conference (ICCDCS), April 2008. (CGU, EI)
  11. S. H. Lin, H. J. Yang, H. L. Kao, F. S. Yeh, and Albert Chin, "Improved 150oC Retention in Hf0.3O0.5N0.2 Memory Device with Low Voltage and Fast Writing," in Device Research Conference (DRC), June 2008. (CGU, EI)
  12. N. C. Su, C. H. Wu, M. F. Chang, J. Z. Huang, S. J. Wang, W. C. Lee, P. T. Lee, H. L. Kao and Albert Chin, "Gate-First Low Vt Al/TaN/Ir/HfLaO p-MOSFET Using Simple Laser Annealing," in Device Research Conference (DRC), June 2008. (CGU, EI)
  13. Jeffrey S. Fu, D. Yang, H. Chiu, K. Chin and H. L. Kao, "Non-uniform Chebyshev Chirped Dumbell-shaped Photonic Bandgap Structure (PBGs) Low Pass Filter," Accepted by 2008 CAC, 2008. (CGU)
  14. Jeffrey S. Fu, C. Yeh, H. Chiu, K. Chin, H. L. Kao and J. Cheng, "Suspended Substrate Stripline (SSS) Transition for High Q LO Injected Finline Mixer," Accepted by 2008 APMC, 2008. (CGU, EI)
  15. H. L. Kao, C. C. Liao, S. P. McAlister and Albert Chin, "Improvement of the Performance of Strained 0.13um MOSFETs Mounted on Flexible Plastic Substrates," in International Semiconductor Device Research Symposium (ISDRS), Dec. 2007. (CGU)
  16. H. L. Kao, D. Y. Yang, Albert Chin, and S. P. McAlister, "A 2.4/5 GHz Dual-Band VCO using a Variable Inductor and Switched Resonator," in IEEE Microwave Symposium (MTT-S), June 2007, pp. 1533-1536. (CGU, EI)
  17. H. L. Kao, Albert Chin, C. C. Liao, and S. P. McAlister, "Very Low Noise in 90nm Node RF MOSFETs using a New Layout," in IEEE Silicon Monolithic Integrated Circuit (SiRF), Jan. 2007, pp.44-47. (CGU, EI)
  18. H. L. Kao, Albert Chin, K. C. Chang, and S. P. McAlister, "A Low-Power Current-Reuse LNA for Ultra-Wideband Wireless Receivers from 3.1 to 10.6 GHz," in IEEE Silicon Monolithic Integrated Circuit (SiRF), Jan. 2007, pp. 257-260. (CGU, EI)
  19. H. L. Kao, Albert Chin, C. C. Liao, Y. Y. Tseng, S. P. McAlister and C. C. Chi, "DC-RF Performance Improvement for Strained 0.13m MOSFETs mounted on a Flexible Plastic Substrate," in IEEE Microwave Symposium (MTT-S), June 2006, pp. 2043-2046. (NCTU, EI)
  20. H. L. Kao, Albert Chin, C. C. Liao, S. P. McAlister, J. Kwo, and M. Hong "Measuring and Modeling the Scaling Trend of the RF Noise in MOSFETs," in Device Research Conference (DRC), June 2006, pp. 65-66. (NCTU, EI)
  21. C. C. Liao, H. L. Kao, Albert Chin, D. S. Yu, M. -F. Li, C. Zhu, and S. P. McAlister, "Comparing High Mobility InGaAs FETs with Si and GOI Devices," in Device Research Conference (DRC), June 2006, pp. 85-86. (NCTU, EI)
  22. C. H. Lai, Albert Chin, H. L. Kao, K. M. Chen, C. C. Chi, T. C. Ong, and C. Wang, "Very Low Voltage SiO2/HfON/HfAlO/TaN Memory with Fast Speed and Good Retention," in IEEE VLSI Tech. Symposium (VLSI), June 2006, pp. 44-45. (NCTU)
  23. K. C. Chiang, C. C. Huang, Albert Chin, W. J. Chen, H. L. Kao, M. Hong, and J. Kwo, "High Performance Micro-Crystallized TaN/SrTiO3/TaN capacitors for Analog and RF Applications," in IEEE VLSI Tech. Symposium (VLSI), June 2006, pp. 102-103. (NCTU)
  24. B. F. Hung, C. C. Chen, H. L. Kao, Albert Chin, "High Performance RF Passive Devices on Plastic Substrates for RFIC Application", in International Solid State Devices and Materials (SSDM), Sept. 2006. (NCTU)
  25. Albert Chin, C. Chen, D. S. Yu, H. L. Kao,S. P. McAlister and C. C. Chi, “Comparison of Germanium-on-Insulator CMOS with InGaAs MOSFETs,”in European Materials Research Society Symp. Dig. (E-MRS), May 2006, 711-715. (NCTU)
  26. W. J. Tsai, T. F. Ou, H. L. Kao, E. K. Lei, Y. Y. Liao, C. C. Yeh, Tahui Wang, Joseph Ku, and Chih-Yuan Lu, “Novel Non-Volatile Memory Cell using Gated-Diode Structure with a Trapping-Nitride Storage Layer,”in IEEE VLSI Tech. Symposium (VLSI) , June 2006, pp. 42-43. (MXIC)
  27. C. C. Yeh, Y. Y. Laio, Tahui Wang, W. J. Tsai, T. C. Lu, H. L. Kao, T. F. Ou, M. S. Chen, Y. J. Chen, E. K. Lai, Y. H. Shih, WenChi Ting, Joseph Ku, and Chi-Yuan Lu, “Insight of Stress Effect on the ONO Stack Layer in a SONOS-type Flash Moemory Cell,”in IEEE proc. Int. Reliability phys. Symp. (IRPS), April 2006, pp. 691-692. (MXIC)
  28. C. C. Yeh, Y. Y. Liao, W. J Tsai, T. C. Lu, T. F. Ou, H. L. Kao, Tahui Wang, WenChi Ting, Joseph Ku, and Chih-Yuan Lu, “Highly scalable NAND-type PHINES Flash Memory for data flash applications,”in Non-Volatile Semiconductor Memory Workshop (NVSMW), Feb. 2006. (MXIC)
  29. H. L. Kao, Albert Chin, B. F. Hung, J. M. Lai, C. F. Lee, M.-F. Li, G. S. Samudra, C. Zhu, Z. L. Xia, X. Y. Liu and J. F. Kang, "Strain-Induced Very Low Noise RF MOSFETs on Flexible Plastic Substrate," in IEEE VLSI Tech. Symposium (VLSI), June 2005. (NCTU)
  30. H. L. Kao, Albert Chin, C. C. Huang, B. F. Hung, K. C. Chiang, Z. M Lai, S. P. McAlister and C. C. Chi, "Low Noise and High Gain RF MOSFETs on Plastic Substrates," in IEEE Microwave Symposium (MTT-S), June 2005. (NCTU, EI)
  31. H. L. Kao, Albert Chin, J. M. Lai, C. F. Lee, K. C. Chiang and S. P. McAlister, "Modeling RF MOSFETs After Electrical Stress Using Low-Noise Microstrip Line Layout," in IEEE Radio Frequency integrated Circuits Symposium (RFIC), June 2005, pp. 157-160. (NCTU, EI)
  32. Albert Chin, H. L. Kao, Y. Y. Tseng, D. S. Yu, C. C. Chen, S. P. McAlister, and C. C. Chi, "Physics and Modeling of Ge-on-Insulator MOSFETs," in European Solid-State Device Research Conference (ESSDERC), Sep. 2005, pp. 285-288. (NCTU)
  33. S. McAlister, A. Chin, D. S.Yu, and H. L. Kao, "Performance and Potential of Germanium on Insulator FETs," in 12th Canadian Semiconductor Conference, Aug. 2005. (NCTU)
  34. K. C. Chiang, C. H. Lai, Albert Chin, H. L. Kao, S. P. McAlister, and C. C. Chi, "Very High Density RF MIM Capacitor Compatible with VLSI," in IEEE Microwave Symposium (MTT-S), June 2005. (NCTU, EI)
  35. C. H. Lai, C. C. Huang, K. C. Chiang, H. L. Kao, W. J. Chen, Albert Chin, and C. C. Chi, "Fast High-k AlN MONOS Memory with Large Memory Window and Good Retention," in Device Research Conference (DRC), June 2005, pp. 99-100. (NCTU, EI)
  36. C. C. Chen, C. C. Liao, H. L. Kao, A. Chin, S.P. McAlister and C.C. Chi, "AC Power Loss and Signal Coupling in VLSI backend Interconnects," in International Solid State Devices and Materials (SSDM), Sep. 2005. (NCTU)
  37. C. C. Yeh, W. J. Tsai, T. C. Lu, Y. R. Chen, F. M. Pan, S. H. Gu, Y. Y. Liao, H. L. Kao, T. F. Ou, N. K. Zous, Wenchi Ting, Tahui Wang, Joseph Ku and Chih-Yuan Lu, “A novel Silicon-Nitride based Light-Emitting Transistor (SiNLET): optical/electrical properties of a SONOS-type three-terminal electroluminescence device for optical communication in ULSI,” in Int. Electron Devices Meeting (IEDM) Tech., Dec. 2005, pp. 1013-1016. (MXIC)
  38. Albert Chin, H. L. Kao, D. S. Yu, C. C. Laio, C. Zhu, M. F. Li, S. Zhu, and K. Dim-Lee, "High performance metal-gate/high-/spl kappa/MOSFETs and GaAs compatible RF passive devices on Ge-on-insulator technology," in Solid-State and Integrated Circuits Technology (ICSICT), Oct. 2004, pp. 302-305. (NCTU)
  39. Steve S. Chung, S. J. Chen, H. L. Kao, S. J. Luo, and H. C. Lin, “Charge Pumping Technique for the Evaluation of Plasma Induced Edge Damage in Shallow S/D Extension Thin Gate Oxide NMOSFET,” in IEEE proc. Int. Reliability phys. Symp. (IRPS), April 2000, pp. 389-399. (NCTU)
  40. S. J. Chen, H. L. Kao, Steve S. Chung, C. C. Chen, C. Y. Chen, H. C. Lin, "New Mechanism and the Characterization of Plasma Charging Enhanced Hot Carrier Effect in Deep-Submicron N-MOSFET's,”in International Conference on Solid State Device and Materials (SSDM), Sep. 2000. (NCTU)

Patents:

  1. 高瑄苓,吳俊沛,陳輝煌,蔡文彬,鍾維民, "半導體元件以及其製作方法,"中華民國專利, 00561586, 2003.
  2. 吳俊沛,陳輝煌,蔡文彬,高瑄苓, "具二極體記憶胞光罩式唯讀記憶體之製作方法,"中華民國專利, 00591762, 2004.
  3. 易成名,陳輝煌,高瑄苓, "非揮發記憶體陣列結構,"中華民國專利, I244197, 2005.
  4. 鄭培仁,高瑄苓, "製造半導體元件的方法," 中華民國專利, I258177, 2006.
  5. 吳俊沛,陳輝煌,陳鴻棋,高瑄苓, "快閃記憶胞製作方法," 中華民國專利, I260072, 2006.
  6. 易成名,陳輝煌,高瑄苓, "在半導體基底表面上具有低表面梯度之擴散埋層形方式," 中華民國專利, 200618258, 2006.
  7. 高瑄苓,蔡文哲,歐天凡, "閘極二極體非揮發記憶體之操作,"中華民國專利, 200824102, 2007.
  8. 歐天凡,蔡文哲,高瑄苓,廖意瑛, "垂直非揮發記憶胞、陣列及其操作,"中華民國專利, 200824103, 2007.
  9. 歐天凡,蔡文哲,賴二琨,高瑄苓, "閘極二極體非揮發記憶體製程,"中華民國專利, 200824050, 2007.
  10. 高瑄苓,蔡文哲,歐天凡,廖意瑛, "具有擴散障礙結構的閘極二極體非揮發記憶體,"中華民國專利, 200823903, 2007.
  11. Chun-Pei Wu, Huei-Huarng Chen,Wen-Bin Tsai, Hsuan-Ling Kao, "Method for fabricating a mask read-only-memory with diode cells," U. S. no.6821841 patent, 2003.
  12. Cheng-Ming Yih, Huei-Huarng Chen, Hsuan-Ling Kao, "Structure of nonvolatile memory array," U. S. no.7005696 patent, 2003.
  13. Chun-Pei Wu, Huei-Huarng Chen, Hong-Chi Chen, Hsuan-Ling Kao, "Method for fabricating a flash memory cell," U. S. no.6979620 patent , 2005.
  14. Cheng-Ming Yih, Huei-Huarng Chen, Hsuan-Ling Kao, "Method for forming a buried diffusion layer with reducing topography in a surface of a semiconductor substrate ," U.S. no. 7,244,661 patent, 2005.
  15. Pei-Ren Jeng, Hsuan-Ling Kao, "Method of improving flash memory performance," U.S. no. 7,151,042 patent, 2006.
  16. Tien Fan Ou, Wen Jer Tsai, Erh-Kun Lai, Hsuan-Ling Kao, "Gated diode nonvolatile memory process," U.S. no. 7,419,868 patent, 2008.
  17. "多晶硅自行對準接觸插塞與多晶硅共享源極線以及其製作方法," CN299407, 2002.
  18. 易成名,陳輝煌,高瑄苓, "非揮發性記憶體陣列結構," CN03157760, 2003.
  19. 易成名,陳輝煌,高瑄苓, "快閃記憶胞製造方法," CN200410011656, 2004.
  20. 易成名,陳輝煌,高瑄苓, "在半導體基底表面上具有低表面梯度之擴散埋層形成方法," CN200510004171, 2005.
  21. 鄭培仁,高瑄苓, "製造半導體元件的方法," CN200510076589, 2005.
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