1. H. C. Liao, J. C. Lin, and R. D. Chang*, ''Time evolution of boron deactivation with carbon coimplantation in preamorphized silicon,'' Jpn. J. Appl. Phys. Vol. 57, p. 081301, 2018. (SCI)

2. R. D. Chang*, H. C. Liao, and C. M. Tai, “Anomalous rapid diffusion of phosphorus caused by heavily implanted carbon in pre-amorphized ultrashallow junctions,” Vacuum, Vol. 140, p. 161, 2017. (SCI)

3. R. D. Chang* and C. H. Lin, “Activation and deactivation of phosphorus in silicon-on-insulator substrates,” Mater. Sci. Semicond. Process., Vol. 42, p. 219, 2016. (SCI)

4. K. K. Hu, R. D. Chang, and W. Y. Woon, “Suppression of transient enhanced diffusion in sub-micron patterned silicon template by dislocation loops formation,” AIP Adv., Vol. 5, p. 107128, 2015. (SCI)

5. R. D. Chang*, Y. T.Ling, and W. T. Su, “Suppression of uphill diffusion caused by phosphorus deactivation using carbon implantation,” Appl. Surf. Sci., Vol. 356, p. 1150, 2015. (SCI)

6. J. C. Wang, C. H. Liao, C. T. Lin, R. D. Chang, L. C. Chang, C. I. Wu, and J. H. Chang, “Charge storage characteristics of nonvolatile memories with chemically-synthesized and vacuum-deposited gold nanoparticles,” Curr. Appl. Phys., Vol. 15, p. 535, 2015. (SCI)

7. R. D. Chang* and H. J. Wang, “Indium penetration through thermally grown silicon oxide,” Vacuum, Vol. 118, p. 133, 2015. (SCI)

8. R. D. Chang* and C. H. Lin, “Deactivation of phosphorus in silicon due to implanted nitrogen”, Phys. Status Solidi C Vol. 11, p. 24, 2014. (EI)

9. K. H. Lee, J. R. Tsai, R. D. Chang, H. C. Lin, and T. Y. Huang, “Low-voltage high-speed programming/erasing floating-gate memory device with gate-all-around polycrystalline silicon nanowire”, Appl. Phys. Lett. Vol. 102, p. 153102, 2013. (SCI)

10. C. M. Yang, J. C. Wang, W. P. Lee, C. C. Lee, C. H. Lin, C. Y. Lee, J. H. Lin, H. H. Chen, C. Y. Hsiao, R. D. Chang, and C. S. Lai, “Superior improvements in GIDL and retention by fluorine implantation in saddle-fin array devices for sub-40-nm DRAM technology”, IEEE Electron Device Lett., Vol. 34, p. 1124, 2013. (SCI)

11. R. D. Chang* and J. R. Tsai, “Effect of implantation damage on transient loss of phosphorus in silicon”, Nucl. Instrum. Meth. B, Vol. 313, p. 1, 2013. (SCI). 

12. R. D. Chang*, C. H. Lin, C. C. Ma, and J. R. Tsai, “Modeling of phosphorus deactivation in polysilicon for simulation of memory process in nanometer era”, Solid State Electron., Vol. 75, p. 16, 2012. (SCI/EI) (NSC 96-2221-E-182-046-MY2)

13. Y. T. Ling, M. J. Huang, R. D. Chang*, and L. Pelaz, “Codiffusion of phosphorus and carbon in preamorphized ultrashallow junctions”, Electrochem. Solid-State Lett. Vol. 15, p. H202, 2012. (SCI/EI)  (NSC 98-2221-E-182-053-MY2)

14. C. C. Ma, F. H. Hsieh, Y. W. Wu, and R. D. Chang*, “Experimental and simulation studies of solid-phase crystallization of fluorine-implanted amorphous silicon on silicon dioxide”, Jpn. J. Appl. Phys. Vol. 50, p. 091403, 2011. (SCI/EI) (NSC 93-2215-E-182-001)

15. S. J. Lin, C. S. Lai, S. T. Chen, Y. J. Chan, R. D. Chang, W. C. Wang, B. Huang, N. T. Shih, G. Chuang, C. Y. Lee, and P. -I. Lee, “Improvement in junction breakdown and GIDL using MFLA in DRAM product”, J. Electrochem. Soc. Vol. 158, p. H363, 2011. (SCI/EI) 

16. R. D. Chang*, C. C. Ma, and J. R. Tsai, “Dose loss of phosphorus due to interface segregation in silicon-on-insulator substrates”, J. Vac. Sci. Technol. B. Vol. 26, p. 1158, 2010. (SCI/EI) (NSC 96-2221-E-182-046-MY2)

17. C. C. Cheng, C. H. Chien, G. L. Luo, Y. T. Ling, R. D. Chang, C. C. Kei, C. N. Hsiao, J. C. Liu, and C. Y. Chang, “Effects of minority-carrier response behavior on Ge MOS capacitor characteristics: Experimental measurements and theoretical simulations”, IEEE Trans. Electron Devices, Vol. 56, p. 1118, 2009. (SCI/EI)

18. R. D. Chang*, Y. T. Ling, T. Liu, J. R. Tsai, and C. C. Ma, “Diffusion of indium implanted in silicon oxides”, Jpn. J. Appl. Phys. Vol. 48, p. 056501, 2009. (SCI/EI)

19. R. D. Chang*, C. H. Lin, and L. W. Ho, “Diffusion of boron near projected ranges of B and BF2 ions implanted in silicon”, Jpn. J. Appl. Phys. Vol. 47, p. 8696, 2008. (SCI/EI) (NSC 89-2215-E-182-007)

20. R. D. Chang* and J. R. Tsai, “Loss of phosphorus due to segregation at Si/SiO2 interfaces: Experiment and modeling”, J. Appl. Phys. Vol. 103, p. 053517, 2008. (SCI/EI) (NSC 89-2215-E-182-003)

21. J. R. Tsai, L. W. Ho, and R. D. Chang*, “Transient dose loss of phosphorus during postimplantation annealing at 800oC”, Jpn. J. Appl. Phys. Vol. 46, p. 4035, 2007. (SCI/EI) (NSC 89-2215-E-182-003)

22. R. D. Chang*, J. R. Tsai, and L. W. Ho, "Elucidating the mechanism of transient loss of phosphorus due to interface segregation", Appl. Phys. Lett. Vol. 88, p. 211914, 2006. (SCI/EI)

23. M. Chang, J. Lin, C. S. Lai, R. D. Chang, S. N. Shih, M. -Y. Wang and P. -I. Lee, “Si-H bond breaking induced retention degradation during packaging process of 256 Mbit DRAMs with negative wordline bias”, IEEE Trans. Electron Devices, Vol. 52, p. 484, 2005. (SCI/EI)

24. R. D. Chang*, P. S. Choi, D. L. Kwong, M. Gardner and P. K. Chu “Time dependence of phosphorus diffusion and dose Loss during postimplantation annealing at low temperatures”, Jpn. J. Appl. Phys. Vol. 41, p. 1220, 2002. (SCI/EI) (NSC 89-2215-E-182-003)

25. R. D. Chang*, H. P. Chiang, H. W. Liu, L. W. Ho, P. C. Chiang, J. R. Tsai, J. P. Lin, ” Observation of Transient Enhanced Diffusion in B-Implanted Si by Buried Boron Isotopes,” Jpn. J. Appl. Phys. Vol.39, p. 6136, 2000. (SCI/EI) (NSC 88-2218-E-182-002)

26. R. D. Chang*, P. S. Choi, D. L. Kwong, D. Wristers and P. K. Chu, "Boron segregation in As-implanted Si caused by electric field and transient enhanced diffusion", Appl. Phys. Lett. Vol. 72, p. 1709, 1998. (SCI/EI)

27. T. T. Sheng, C. Y. Lu, R. D. Chang and S. T. Chiang, "Transmission electron microscopy analysis of "black belt": the masking film of white ribbon of Kooi effect in the local oxidation of silicon process", J. Appl. Phys. Vol. 75, p. 3810, 1994. (SCI/EI)

28. T. T. Sheng, C. Y. Lu, R. D. Chang and S. T. Chiang, "From "white ribbon" to "black belt": a direct observation of the Kooi effect masking film by transmission electron microscopy", J. Electrochem. Soc. Vol. 140, p. L163, 1993. (SCI/EI)

 

1. R. D. Chang*, H. C. Liao, J. C. Lin, and J. R. Tsai, “Impact of carbon on the deactivation behaviors of boron and phosphorus in preamorphized silicon”, 21th International Conference on Ion Implantation Technology (IIT 2018), Würzburg, Germany, 2018. (EI)

2. R. D. Chang* and P. H. Lin, “Simulation study of implantation angle variation and its impact on device performance”, 21th International Conference on Ion Implantation Technology (IIT 2016), Tainan, Taiwan, 2016. (EI)

3. R. D. Chang*, C. H. Lin, H. Lu, and Z. Wan, “Phosphorus redistribution caused by electrical deactivation of phosphorus at low temperatures”, 20th International Conference on Ion Implantation Technology (IIT 2014), Portland, OR, 2014. (EI)

4. H. C. Liao, Y. W. Wu, R. D. Chang*, and J. R. Tsai, “Surface potential redistribution in laterally diffused field effect transistors”, IEEE 2nd International Symposium on Next-Generation Electronics (ISNE), Kaohsiung, Taiwan, 2013. (EI)

5. Y. T. Ling, W. T. Su, T. W. Pi, and R. D. Chang, “Differential Hall analysis of ultrashallow carrier profiles using X-ray photoelectron spectroscopy for nanometer depth resolution”, 19th International Conference on Ion Implantation Technology (IIT 2012), Valladorid, Spain, 2012.

6. R. D. Chang*, J. R. Tsai and C. C. Ma, “Time evolution of dose loss due to interface segregation”, 17th International Conference on Advanced Thermal Processing of Semiconductors (RTP 2009), Albany, NY, 2009. (EI)

7. Ming-Der Liu, Chia-Chi Ma, Yi-Tai Chiu, Din-Guo Cheng, Horng-Chi Lin, Ruey-Dar Chang, and Huang-Chung Cheng, “Process Simulation of Excimer Laser Annealing”, Symposium in Nano Device Technology, Hsinchu, Taiwan, 2005.

8. J. R. Tsai, L. W. Ho, S. H. Lin, T. C. Chang, M. D. Shieh, H. C. Lin, J. P. Lin, W. S. Feng, and R. D. Chang, "Transient behavior of phosphorus dose loss and modeling of dopant segregation at the Si/SiO2 interface", International Electron Device Meeting (IEDM), San Francisco, CA, 2004. (EI) (NSC 89-2215-E-182-002)

9. Y. T. Ling, T. C. Hsu, C. W. Lai, M. N. Chang and R. D. Chang, “Plan-view scanning capacitance microscopy for measuring depletion boundaries of a p-n junction”, Symposium in Nano Device Technology, Hsinchu, Taiwan, 2004.

10. C. C. Hsu, R. D. Chang, C. Y. Chen, M. N. Chang and F. M. Pan, “Doping profile measurement of nano-devices using scanning capacitance microscopy”, Symposium in Nano Device Technology, Hsinchu, Taiwan, 2003.

11. F. H. Hsieh, C. C. Ma, H. C. Lin, C. S. Lai and R. D. Chang, “Analysis and simulation of solid phase recrystallization of implanted amorphous silicon films”, 2002 Annual Conference of The Chinese for Materials Science (材料年會), Taipei, Taiwan, 2002. (NSC 91-2215-E-182-002)

12. C. C. Hsu, J. R. Tsai, R. D. Chang, C. Y. Chen, M. N. Chang and F. M. Pan, “Simulation and analysis of scanning capacitance microscopy for doping profile measurement”, Symposium in Nano Device Technology, Hsinchu, Taiwan, 2002.

13. J. R. Tsai, L. W. Ho, P. C. Chiang, H. C. Lin, C. Y. Lin and R. D. Chang, “The deactivation of heavily doped arsenic and phosphorus in polycrystalline silicon films”, Symposium in Nano Device Technology, Hsinchu, Taiwan, 2001.

14. K. C. Liu, X. Wang, E. Quinones, X. Chen, X. D. Chen. D. Kenke, B. Anantharam, R. D. Chang, S. K. Ray, S. K. Oswal, C. Y. Tu, and S. K. Banerjee, "A novel sidewall strained-Si channel nMOSFET", International Electron Device Meeting (IEDM), Washington, DC, 1999. (EI)

15. R. D. Chang, P. S. Choi, D. L Kwong, and M. Gardner, “The time evolution of the enhanced phosphorus diffusion due to ion implantation”, Electron Devices and Materials Symposium, Taoyuan, Taiwan, 1999.

16. R. D. Chang, “Diffusion modeling of implanted indium during rapid thermal annealing”, Semiconductor Technology CAD Workshop and Exhibition, Hsinchu, Taiwan, 1999.

17. R. D. Chang, P. S. Choi, D. Wristers and D. L Kwong, "Experiments and modeling of boron segregation in As implanted Si during annealing", International Electron Device Meeting (IEDM), Washington, DC, 1997. (EI)

18. R. D. Chang, P. S. Choi, D. Wristers, P. K. Chu and D. L Kwong, "Boron segregation in As implanted Si due to electric field and transient enhanced diffusion", SPIE Microelectronic Manufacturing, Austin TX, 1997.

19. P. S. Choi, T. Su, R. D. Chang and D. L. Kwong, "Post-implant anneal: fundamental differences in dopant diffusion and activation due to rapid thermal annealing/furnace annealing", 4th International Symposium on Process Physics and Modeling of Semiconductor Devices, Los Angeles, CA, 1996.

20. R. D. Chang, R. C. Deng, S. I. Hsu and S. T. Chiang, "The impact of ion-implantation damage on dopant diffusion", International Electron Devices and Materials Symposium, Hsinchu, Taiwan, 1994.

21. T. F. Chen, T. S. Li and R. D. Chang, "Anomalous boron diffusion in BF2+ implanted silicon", International Electron Devices and Materials Symposium, Taipei, Taiwan, 1992.

22. R. D. Chang, T. F. Chen and Julia S. Fu, "Impurity gettering toward residual damages in shallow junctions", International Conference on Solid State Devices and Materials (SSDM), Tsukuba, Japan, 1992.

 

1. 彭瑞焜,張睿達, "0.35um device design for DRAM application", 經濟部科技專案次微米製程技術發展五年計畫研究報告, 1994.

2. 張睿達, "SIMS/SRP doping profile data base user's manual", 經濟部科技專案次微米製程技術發展五年計畫研究報告, 1994.

3. 張睿達, "0.35um DRAM thick oxide device characteristics", 經濟部科技專案次微米製程技術發展五年計畫研究報告, 1994.

4. 張睿達,李道聖, "0.5um 製程模式分析", 經濟部科技專案次微米製程技術發展五年計畫研究報告, 1993.

5. 張睿達, "氧化模式校正", 經濟部科技專案次微米製程技術發展五年計畫研究報告, 1993.

6. 張睿達, "SUPREM-3之擴散模式分析", 經濟部科技專案次微米製程技術發展五年計畫研究報告, 1992.

7. 陳德芳,張睿達, "製程參數校正報告", 經濟部科技專案次微米製程技術發展五年計畫研究報告, 1991.