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著作列表_高泉豪

Journal articles:

期刊論文 
 
  1. Yu-Hua Liu, Chyuan-Haur Kao, Tsung-Chin Cheng, Chih-I Wu and Jer-Chyi Wang (2017, Nov). Data Retention Characterization of Gate-Injected Gold-Nanoparticle Non-Volatile Memory with Low-Damage CF4-Plasma-Treated Blocking Oxide Layer. nanomaterials , 7, 385-397. (SCI, 59/274 NANOSCIENCE & NANOTECHNOLOGY). MOST 105-2221-E-182-009. 本人為第一作者. 
  2. Chyuan-Haur Kao, Chia Lung Chang, Wei Ming Su, Yu Tzu Chen, Chien Cheng Lu, Yu Shan Lee, Chen Hao Hong, Chan-Yu Lin & Hsiang Chen (2017, Aug). Magnesium Oxide (MgO) pH-sensitive Sensing Membrane in Electrolyte-Insulator-Semiconductor Structures with CF4 Plasma Treatment. Scientific Reports, 7,7185-7193. (SCI, 10/64 MULTIDISCIPLINARY SCIENCES ). MOST 105-2221-E-182-009. 本人為第一作者. 
  3. Feng-Hsu Fan, Zun-Yao Syu, Chia-Jung Wu, Zhong-Jie Yang, Bo-Song Huang, Guan-Jhong Wang, Yung-Sen Lin, Hsiang Chen, Chyuan Hauer Kao & Chia-Feng Lin (2017, Jul). Ultraviolet GaN Light-Emitting Diodes with Porous-AlGaN Reflectors. Scientific Reports, 7: 4968. (SCI, 10/64 MULTIDISCIPLINARY SCIENCES ). MOST 105-2221-E-182-009. 
  4. Chyuan-Haur Kao, Wang Ting Chiu, Yi Cian Chen, Luo Yang, Shin Chieh Tsai, Ting Wei Chang, Ching-Tsan Tsai, Chan-Yu Lin, Hsiang Chen (2017, Jun). BaxSr1-xTiO3 sensing membrane in electrolyte-insulatorsemiconductor structure with rapid thermal annealing in N2 ambient. Vacuum, 140, 3-6. (SCI, 169/274 MATERIALS SCIENCE, ). MOST 105-2221-E-182-009. 本人為第一作者. 
  5. A. Panimaya Selvi Isabel, Chyuan Haur Kao, Rama Krushna Mahanty, Yew Chung Sermon Wu, Chung Yi Li, Chan Yu Lin, Chun Fu Lin (2017, May). Sensing and structural properties of Ti-doped tin oxide (SnO2) membrane for bio-sensor applications. Ceramics International, 43,10386–10391. (SCI, 2/26 MATERIALS SCIENCE, ). MOST 105-2221-E-182-009. 本人為通訊作者. 
  6. Chyuan-Haur Kao, Che-Wei Chang, Yu Tzu Chen, Wei Ming Su, Chien Cheng Lu, Chan-Yu Lin & Hsiang Chen (2017, May). Influence of NH3 plasma and Ti doping on pH-sensitive CeO2 electrolyte-insulatorsemiconductor biosensors. Scientific Reports, 7, 2405-2414. (SCI, 10/64 MULTIDISCIPLINARY SCIENCES ). MOST 105-2221-E-182-009. 本人為第一作者. 
  7. Chyuan Haur Kao, Su Zhien Chen, Yang Luo, Wang Ting Chiu, Shih Wei Chiu, I Chien Chen, Chan-Yu Lin, Hsiang Chen, (2017, Feb). The influence of Ti doping and annealing on Ce2Ti2O7 flash memory devices. Applied Surface Science, 396, 1673–1677. (SCI, 1/18, MATERIALS SCIENCE, COATINGS & FILMS). MOST 104-2221-E-182-042. 本人為第一作者. 
  8. Ming Ling Lee, Chyuan Haur Kao, Hsiang Chen, Chan Yu Lin, Yu Teng Chung, Kow Ming Chang (2017, Feb). The structural and electrical comparison of Y2O3 and Ti-doped Y2O3 dielectrics. Ceramics International, 43, 3043–3050. (SCI, 2/26 MATERIALS SCIENCE, ). MOST 104-2221-E-182-042. 本人為通訊作者. 
  9. Ming Ling Lee, Hsiang Chen, Chyuan Haur Kao, Rama Krushna Mahanty, Wei Kung Sung, Chun Fu Lin, Chan Yu Lin, Kow Ming Chang (2017, Feb). Physical and electrical properties of flash memory devices with nickel oxide(NiO2) charge trapping layer. Vacuum, 140, 47-52. (SCI, 169/274 MATERIALS SCIENCE, ). MOST 105-2221-E-182-009. 本人為通訊作者. 
  10. Yung-Sen Lin, Ping-Ju Sung, Tzung-Han Tsai, Ming-Ho Hsieh, Hsiang Chen, Chia-Feng Lin, Chyuan Hauer Kao (2016, Mar). Enhanced lithium-ion intercalation and conduction of transparent tantalum oxide films by lithium addition with an atmospheric pressure plasma jet. J Solid State Electrochem, 20, 743–757. (SCI, 13/27, ELECTROCHEMISTRY). MOST 104-2221-E-182-042. 
  11. Chyuan Haur Kao, Min Han Lin, Yun Yang He, Yung-Sen Lin, Chia Feng Lin, Hsiang Chen, Jhih Jyun Syu (2015, Dec). High-j NdTaO4 dielectrics deposited on polycrystalline silicon substrates. J Mater Sci: Mater Electron, 27:3693–3696. (SCI, 82/271, MATERIALS SCIENCE, MULTIDISCIPLINARY). MOST 104-2221-E-182-042. 本人為第一作者. 
  12. Chyuan-Haur Kao, Hsiang Chen, Fang Yao Stephen Hou, Chao-Sung Lai, Chin pang Chen, Yun Yang He, Shang Ren Lin, Kunmin Hsieh, Minhan Lin, (2015, Sep). Fabrication of multianalyte CeO2 nanograin electrolyte-insulator-semiconductor biosensors by using CF4 plasma treatment. Sensing and Bio-Sensing Research, 5, 71–77. MOST 104-2221-E-182-042. 本人為第一作者. 
  13. Chyuan-Haur Kao, Chun Chi Chen, Chih Ju Lin, (2015, Aug). Comparison of gadolinium oxide trapping layers in flash memory applications . Vacuum, 118, 74-79. (SCI, 169/274 MATERIALS SCIENCE, ). MOST 103-2221-E-182-062. 本人為第一作者. 
  14. Chyuan-Haur Kao, Hsiang Chen, Su Zhien Chen, Shen Ghao Hung, Chian You Chen, Yun Yang He, Shang Ren Lin, Kunmin Hsieh, Min Han Lin, (2015, Aug). Effects of annealing on CeO2-based flash memories. Vacuum, 118, 69-73. (SCI, 169/274 MATERIALS SCIENCE, ). MOST 104-2221-E-182-042. 本人為第一作者. 
  15. Chuan Haur Kao, Hsiang Chen, Chun Chi Chen, Ching Pang Chen, Jung Ji Wang, Chian You Chen, Yun Ti Chen, Jun Han Lin, Yu Cheng Chu (2015, Jan). Comparison of electrical and physical characteristics between Gd2O3 and Ti-doped GdTixOy trapping layers. Microelectronic Engineering, 138, 21-26. (SCI, 120/262, ENGINEERING, ELECTRICAL & ELECTRONIC ). MOST 103-2221-E-182-062. 本人為第一作者. 
  16. Chyuan-Haur Kao, Hsiang Chen, Chian-You Chen (2015, Jan). Material and electrical characterizations of high-k Ta2O5 dielectric material deposited on polycrystalline silicon and single crystalline substrate. Microelectronic Engineering, 138, 36-41. (SCI, 120/262, ENGINEERING, ELECTRICAL & ELECTRONIC ). MOST 103-2221-E-182-062. 本人為第一作者. 
  17. Chyuan Haur Kao, Hsiang Chen, Ming Ling Lee, Che Chun Liu, Herng-Yih Ueng, Yu Cheng Chu, Yu Jie Chen, Kow Ming Chang (2014, Nov). Multianalyte biosensor based on pH-sensitive ZnO electrolyte–insulator–semiconductor structures. Journal of Applied Physics, 115, 184701 . (SCI, 39/128, PHYSICS, APPLIED). MOST 101-2221-E-182-045-MY2. 本人為第一作者. 
  18. Chyuan Haur Kao*, Hsuan Chi Fan, Chien Jung Liao, Shih Nan Cheng (2014, Apr). Effects of fluorine implantation on polysilicon with high-k Er2O3 dielectrics. International Journal of Nanotechnology, 11, 1110–1118. (SCI, 149/241, MATERIALS SCIENCE, MULTIDISCIPLINARY). MOST 101-2221-E-182-045-MY2. 本人為第一作者、通訊作者. 
  19. Chyuan Haur Kao, Hsiang Chen, Yucheng Liao, Jinzhou Deng, Yucheng Chu, Yunti Chen, Hungwei Chang (2014, Mar). Comparison of high-κ Nd2O3 and NdTiO3 dielectrics deposited on polycrystalline silicon substrates. Thin Solid Films, 570, 412–416. (SCI, 6/17, MATERIALS SCIENCE, COATINGS & FILMS). MOST 101-2221-E-182-045-MY2. 本人為第一作者. 
  20. Chyuan Haur Kao, Hsiang Chen, Che Chun Liu, Chian Yu Chen, Yun Ti Chen, Yu Cheng Chu (2014, Feb). Electrical, material and multianalyte-sensitive characteristics of thermal CeO2/SiO2-stacked oxide capacitors. Thin Solid Films, 570, 552–557. (SCI, 6/17, MATERIALS SCIENCE, COATINGS & FILMS). MOST 101-2221-E-182-045-MY2. 本人為第一作者. 
  21. Chyuan Haur Kao, Hsiang Chen, Su Zhien Chen, Yu Jie Chen, Yu Cheng Chu (2014, Feb). Characterizations of MoTiO5 flash memory devices with post-annealing. Thin Solid Films, 570, 564–567. (SCI, 6/17, MATERIALS SCIENCE, COATINGS & FILMS). MOST 103-2221-E-182-062. 本人為第一作者. 
  22. Chyuan Haur Kao, Hsiang Chen, Ming Ling Lee, Che Chun Liu, Herng-Yih Ueng, Yu Cheng Chu, Ching Bang Chen, Kow Ming Chang (2014, Jan). Effects of N2 and O2 annealing on the multianalyte biosensing characteristics of CeO2-based electrolyte–insulator–semiconductor structures. Sensors and Actuators, B: Chemical, 194, 503– 510. (SCI, 2/57, INSTRUMENTS & INSTRUMENTATION). MOST 101-2221-E-182-045-MY2. 本人為第一作者. 
  23. Chyuan-Haur Kao, Hsiang Chen, Jer-Chyi Wang,Yu-Cheng Chu, Chiao-Sung Lai, Shih-Po Lin, Chuan-Yu Huang, Jiun-Cheng Ou (2014, Jan). Deposition of High-k Samarium Oxide Membrane on Polysilicon for the Extented-Gate Field-Effect Transistor (EGFET) Applications. Journal of New Materials for Electrochemical Systems, 17, 13-16,. (SCI, 26/27, ELECTROCHEMISTRY). MOST 101-2221-E-182-045-MY2. 本人為第一作者、通訊作者. 
  24. Chyuan-Haur Kao, Hsiang Chen, Lien-Tai Kuo, Jer-Chyi Wang, Yun-Ti Chen, Yu-Cheng Chu, Chian-You Chen, Chao-Sung Lai, Shan Wei Chang, Che Wei Chang (2014, Jan). Multi-analyte biosensors on a CF4 plasma treated Nb2O5-based membrane with an extended gate field effect transistor structure. Sensors and Actuators, B: Chemical, 194, 419– 426. (SCI, 2/57, INSTRUMENTS & INSTRUMENTATION). MOST 99-2221-E-182-060. 本人為第一作者. 
  25. Chyuan Haur Kao, Hsiang Chen, Chuan-Yu Huang (2013, Dec). Effects of Ti Addition and Annealing on High-k Gd2O3 Sensing Membranes on Polycrystalline Silicon for Extended-Gate Field-Effect Transistor Applications. Applied Surface Science, 286, 328-333. (SCI, 2/17, MATERIALS SCIENCE, COATINGS&FILM). NSC 101-2221-E-182-045-MY2. 本人為第一作者. 
  26. Hsiang Chen, Chyuan Haur Kao, Bo Yun Huang, Wen Shih Lo (2013, Oct). Fluorine Implantation Effects on Ta2O5 Dielectrics on Polysilicon Treated with Post Rapid Thermal Annealing. Applied Surface Science, 283, 694-698. (SCI, 2/17, MATERIALS SCIENCE, COATINGS&FILM). NSC 101-2221-E-182-045-MY2. 
  27. Chyuan-Haur Kao*, Pei Lun Lai, Hsin Yuan Wang (2013, Sep). The Comparison between Ta2O5 and Ti-doped Ta2O5 Dielectrics . Surface & Coatings Technology, 231, 512-516 . (SCI, 3/17, MATERIALS SCIENCE, COATINGS&FILMS). NSC 101-2221-E-182-045-MY2. 本人為第一作者、通訊作者. 
  28. Hsiang Chen, Yih-Min Yeh, Chuan Hao Liao, Chun Wei Lin, Chyuan Haur Kao, Tien Chang Lu (2013, Jan). Optical Characterizations and Reverse-Bias Electro luminescence Observation for Reliability Investigations of the InGaN Light Emitting Diode. Microelectronic Engineering, 101, 42-46 . (SCI, 109/243, ENGINEERING, ELECTRICAL&ELECTRONIC). NSC 101-2221-E-182-045-MY2. 
  29. Chyuan-Haur Kao, Hsiang Chen, Yu Tsung Pan, Jing Sing Chiu, Tien-Chang Lu “The Characteristics of the High-K Er2O3 (Erbium Oxide) Deposited on Polycrystalline Silicon,” submitted to Journal of Applied Physics.Chyuan-Haur Kao, Hsiang Chen, C. S. Chuang, C. C. Chen,” The TiO2 (Titanium Oxide) Charge Trapping Layer for Nonvolatile Memory Applications,” submitted to Applied Surface Science.
  30. Chyuan-Haur Kao, Hsiang Chen, Yu Tsung Pan, Jing Sing Chiu, Shih Po Lin, Chao Sung Lai, “The Investigation of the High-K Gd2O3 (Gadolinium Oxide) Inter-Dielectrics Deposited on the Polycrystalline Silicon,” Journal of Electrochemical Society, Vol. 157, No. 9, 2010. 【SCI=2.437】
  31. Chyuan Haur Kao*, C. S. Lai, W. H. Sung, and C. H. Lee,“ The Characteristics of Fluorinated Polycrystalline Silicon Oxides and Thin Film Transistors by CF4 Plasma Treatment,” Thin Solid Films, will be accepted for publication, 2010. 【SCI=1.884】
  32. Chyuan-Haur Kao*, Hsiang Chen, Jing Sing Chiu, and Kung Shao Chen, “Physical and Electrical Characteristics of the High-K Ta2O5 (Tantalum Pentoxide) Dielectric Deposited on the Polycrystalline Silicon,” Applied Physics Letter, Vol. 96, 112901, 2010. 【SCI=3.726】
  33. Chyuan-Haur Kao*, T. C. Chan, Kung Shao Chen, Yu-Teng Chung, and Wen-Shih Luo,” Physical and Electrical Characteristics of the High-K Nd2O3 Polyoxide Deposited on Polycrystalline silicon,” Microelectronics Reliability, Vol. 50, p. 709-712, 2010. 【SCI=1.29】
  34. Chyuan Haur Kao*, K. S. Chen, J. S. Chiu, C. S. Chan, T. C. Chen, W. S. Luo, and Y. T. Chung, “High-K Ta2O5 Polyoxide Deposited on Polycrystalline with NH3 Plasma Treatment”, Electrochemical Society (ECS) Transactions, vol. 19, issue. 4, p. 335-340, May, 2009. 【EI】
  35. Tse-Heng Chou, Yean-Kuen Fang, Yen-Ting Chiang,Kung-Cheng Lin,Cheng-I Lin, Chyuan-Haur Kao, and Hsiao-Yi Lin,”The Pd/TiO2/n-LTPS Thin-Film Schottky Diode on Glass Substrate for Hydrogen SensingApplications,“ IEEE Electron Device Lett., vol. 29, no.11, p. 1232-1235, Nov. 2008. 【SCI=3.049】
  36. Chyuan Haur Kao*, C. S. Lai, C. S. Huang, and K. M. Fan, “Ge-Nanocrystal Charge Trapping Devices Fabricated by One-Step Oxidation on Poly-SiGe”, Applied Surface Science, Vol. 255, p.2512-2516, 2008. 【SCI=1.576】
  37.  Chyuan Haur Kao*, W.H. Sung, ”Negative Bias Temperature Instability for P-channel of LTPS Thin Film Transistors with Fluorine Implantation”, Mater. Res. Soc. Symp. Proc. Vol. 1066, A06-21, p.1-5, 2008. 【EI】
  38. Chyuan Haur Kao*, C. S. Lai, M. C. Tsai, C. H. Lee, C. S. Huang, and C. R. Chen, “Using Thermal Oxidation and Rapid Thermal Annealing on Polycrystalline-SiGe for Ge nanocrystal,” Mater. Res. Soc. Symp. Proc. Vol. 1071, F03-21, p.1-6, 2008. 【EI】
  39. Chyuan Haur Kao*, C. S. Chen, C. H. Lee,” Charge-trapping properties of poly-silicon oxides by rapid thermal N2O process”, Microelectronics Journal, Vol. 39, p. 1075-1079, 2008. 【SCI=0.859】
  40. J.C. Liao, Y.K. Fang, C. H. Kao and C.Y.Cheng,” Dynamic Negative Bias Temperature Instability (NBTI) of Low-Temperature Polycrystalline Silicon (LTPS) Thin Film Transistors,“ IEEE Electron Device Lett., vol. 29, no.5, p. 477-479, May. 2008. 【SCI=3.049】
  41. Chyuan Haur Kao*, Chao Sung Lai , M. C. Tsai , K. M. Fan, C. H. Lee, “ SiGe Nanocrystals Fabricated by One-Step Thermal Oxidation and Rapid Thermal Annealing,” Electrochemical Solid State Letter, Vol. 11, No. 4, p. 44-46, 2008. 【SCI=2.001】
  42. Chyuan Haur Kao*, and C. S. Lai,” Thin-Film Transistors using TEOS Gate Dielectrics with RTN2O Annealing, “Semiconductor Science Technology, Vol. 23, 025020, p.1-6, 2008. 【SCI=1.434】
  43. Chyuan Haur Kao*, W.H. Sung, and C.S. Chen,” Investigation of the doping and thickness effects of polysilicon oxide by rapid thermal N2O oxidation,” Microelectronic Engineering, Vol. 85, p. 408-413, 2008. 【SCI=1.583】
  44. C. S. Lai, Chyuan Haur Kao*, and C. L. Lee, Tan Fu Lei, “Nitrogen Effects on the Integrity of Silicon Dioxide Grown on Polycrystalline Silicon,” Journal of Electrochemical Society, Vol. 154. No. 10, p.883-886, 2007. 【SCI=2.437】
  45. Chyuan Haur Kao*, C. S. Lai and C. L. Lee,” Electrical and Reliability Improvement in Polyoxide by Fluorine Implantation,” Journal of Electrochemical Society, Vol. 154. No. 4, p.259-262, 2007. 【SCI=2.437】
  46. Chyuan Haur Kao*, C. S. Lai and C. L. Lee,”Polarity asymmetry of Polyoxide Grown on Phosphorus in-situ Doped Polysilicon,“ Journal of Electrochemical Society, Vol. 153, No. 9, p. 860-865, 2006. 【SCI=2.437】
  47. Chyuan Haur Kao*, C. S. Lai and C. L. Lee,” Oxide Grown on Polycrystal-silicon by Rapid Thermal Oxidation in N2O,“ Journal of Electrochemical Society, Vol. 153, No. 2, p. 128-133, 2006.【SCI=2.437】

Conference & proceeding papers:

  1. Chyuan. Haur. Kao, Hsiang Chen, Jing-Siang Chiu, Yu-Teng Chung, Hsuan-Chi Fan, Pan-Yu Tsung, Yu-Cheng Liao, Wen-Shih Luo, Pei-Lun Lai, Chuan-You Huang,” Physical and Electrical Characteristics of the High-K Er2O3 Polyoxide Deposited on Polycrystalline silicon,” 2010 China Semiconductor Technology International Converence (CSTIC), Shanghai, China.
  2. Chyuan-Haur Kao, Kung Shao Chen, Yu-Teng Chung,” The Hot-Carrier- induced Degradation and Positive/Negative Bias Temperature Instability in 65 nm CMOSFET Devices,” 2010 China Semiconductor Technology International Converence (CSTIC), Shanghai, China.
  3. Chuang Chih Sheng, Chyuan Haur Kao, Hsiang Chen, Chun Chi Chen, Kung Shao Chen, Lin Shih Po, Ching Hua Huang, Shih Nan Cheng, Tz Ying Li, Kai-shiang Ho, Jiun-cheng Ou, Chau-shian Lin,” The Characterization of TiO2 Titanium Oxide Trapping Layer memories,” 2009 International Electron Devices and Materials Symposium (IEDMS), Taoyuan, Taiwan, R.O.C.
  4. T. C. Chan, Chyuan. Haur. Kao, Wen-Shih Luo, Kung Shao Chen, Pan-Yu Tsung, Yu-Cheng Liao, Yu-Teng Chung, Fan-Hsuan Chi, Pei-Lun Lai, Chuan-You Huang,” Physical and Electrical Characteristics of the High-K Nd2O3 Polyoxide Deposited on Polycrystalline silicon,” 2009 International Electron Devices and Materials Symposium (IEDMS), Taoyuan, Taiwan, R.O.C.
  5. Jing-Siang Chiu, Chyuan. Haur. Kao, Hsiang Chen, Fan-Hsuan Chi, Pan-Yu Tsung, Yu-Cheng Liao, Yu-Teng Chung, Wen-Shih Luo, Pei-Lun Lai, Chuan-You Huang,” The Characteristics of the High-K Er2O3 (Erbium) Polysilicon Oxide,” 2009 International Electron Devices and Materials Symposium (IEDMS), Taoyuan, Taiwan, R.O.C.
  6. K. S. Chen, Chyuan-Haur Kao, T. C. Chan, S. P. Lin, S. Y. Chen,“ The Hot-Carrier-induced Degradation and Positive/Negative Bias  Temperature Instability in 65 nm CMOSFET Devices,” 2009 International Electron Devices and Materials Symposium (IEDMS), Taoyuan, Taiwan, R.O.C.
  7. J. S. Chiu, Chyuan-Haur Kao, Hsian Chen, P. Y. Tsung, Y. C. Liao, W. S. Liao, Y. T. Chung, H. C. Fan, P. L. Lai, C. Y. Huang, C. S. Lin, J. M. Dai, “Electrical and Physical Characteristics of the High-K Gd2O3 (Gadolinium) Dielectric Deposited on the Polycrystalline Silicon,” 2009 SSDM (Solid State Device Meeting), Sendai, Japan.
  8. J. S. Chiu, Chyuan. Haur. Kao, C. S. Chen, T. C. Chan, K. S. Chen,W. S. Luo, Y. T. Chung, C. C. Ou,” High-K Ta2O5 Polyoxide Deposited on Polycrystalline with NH3 Plasma Treatment,” 2009 215th ECS (Electrochemical Society) Meeting (2009), San Fancisco, USA.
  9. T. C. Chan, Chyuan. Haur. Kao, C. H. Lee, J. S. Chiu, S. K. Chen, Y. T. Chung, W. S. Luo,” Oxide Grown on Metal Induced Crystallization Polysilicon Combined with CF4 plasma Treatment,” 2008 International Electron Devices and Materials Symposium (IEDMS), Taichung, Taiwan, R.O.C.
  10. C. S. Chuang, Chyuan. Haur. Kao, C. S. Lai, M. C. Tsai, K. S. Chen, S. K. Chen, H. C. Fan, S. P. Lin, C. R. Chen, ” Fabrication of Germanium Nanocrystals by Rapid Thermal Annealing,” 2008 International Electron Devices and Materials Symposium (IEDMS), Taichung, Taiwan, R.O.C.
  11. K. S. Chen, Chyuan. Haur. Kao, Hsin-Ming Hou, C. S. Chuang, S. K. Chen, H. C. Fan, S. P. Lin, T. J. Li,” Hot Carrier Induced Degradation for Nanometer MOSFET Device”, 2008 International Electron Devices and Materials Symposium (IEDMS), Taichung, Taiwan, R.O.C.
  12. J. S. Chiu, Chyuan. Haur. Kao, C. S. Chen, T. C. Chan, W. S. Luo, Y. T. Chung,” High-K Ta2O5 Polyoxide Deposited on Polycrystalline with NH3 Plasma Treatment,” 2008 International Electron Devices and Materials Symposium (IEDMS), Taichung, Taiwan, R.O.C.
  13. Chyuan-Haur Kao, C. H. Lee, T. C. Chan, J. S. Chiu, C. S. Chen, K. S. Chen, C. S. Chuang, S. K. Chen, “Polyoxide Grown on Metal Induced Re-crystallized Polysilicon Combined with CF4 Plasma,” 2008 IEEE ICSICT 9th International Conference on Solid-State and Integrated-Circuit Technology, Beijing, China.
  14. Chyuan. Haur. Kao, C. H. Lee, T. C. Chan, S. K. Chen, “Oxide Grown on Polycrystalline Silicon by Metal Induced Crystalization,” 2008 Sixth Asian Conference on Electrochemistry, Taipei, Taiwan, R.O.C.
  15. J.C. Liao, Y.K. Fang, and Chyuan. Haur. Kao, “A Systematic Study of the Static and Dynamic Negative Temperature Instability on Low-Temperature Polycrystalline Silicon (LTPS) Thin Film Transistors,” 2008 Sixth Asian Conference on Electrochemistry, Taipei, Taiwan, R.O.C.
  16. Chyuan. Haur. Kao, C. S. Lai, M. C. Tsai, K. S. Chen, T. C. Chan, C. S. Chuang, S. K. Chen, “Using Rapid Thermal Annealing for Ge Nanocrystals Formation,” 2008 Sixth Asian Conference on Electrochemistry, Taipei, Taiwan, R.O.C.
  17. Chyuan Haur Kao, C. S. Lai, M. C. Tsai, C. H. Lee, H. C. Huang, C. R. Chen, “Ge-Nanocrystal Fabricated by Thermal Oxidation and Rapid Thermal Annealing on Polycrystalline-SiGe,” 2008 Material Research Society (MRS) Spring Meeting, San Fancisco, USA.
  18. Chyuan Haur Kao, C. S. Lai, W. H. Sung, C. S. Chen, “Negative Bias Temperature Instability for p-channel of LTPS Thin Film Transistors with Fluorine Implantation,” 2008 Material Research Society (MRS) Spring Meeting, SanFancisco, USA.
  19. Chyuan Haur Kao, C. S. Lai, M. C. Tsai, C. H. Lee, H. C. Huang, C. R. Chen, Y. W. Liao, C. S. Chuang, “Ge-Nanocrystal Fabricated by Thermal Oxidation and Rapid Thermal Annealing on Polycrystalline-SiGe,” 2007 International Electron Devices and Materials Symposium (IEDMS), Hsinchu, Taiwan, R.O.C. NSC 96-2221-E-182-053.
  20. Chyuan Haur Kao, C. S. Lai, W. H. Sung, C. S. Chen, H. C. Huang, C. R. Chen, C. H. Chiu, T. C. Chan, “Negative Bias Temperature Instability for p-channel of LTPS Thin Film Transistors with Fluorine Implantation,” 2007 International Electron Devices and Materials Symposium (IEDMS), Hsinchu, Taiwan, R.O.C. NSC 96-2221-E-182-053.
  21. Wen-Hsiang Sung, Chyuan Haur Kao, Hsing-Kan Peng, Shang-Feng Huang, Wen-Fa Tsai, Chi-Fong Ai, Chih-Rong Chen and Chao-Sung Lai, “In-Situ Fluorinated Low-Temperature Polycrystalline Silicon (LTPS) Thin-Film Transistors (TFT) with Low Trapping and Off Current by CF4 Plasma,” 2007 SSDM (Solid State Device Meeting), Tokyo, Japan.
  22. Chyuan Haur Kao, C. S. Lai, W. H. Sung, “Electrical and Reliability Improvements for Thin-Film Transistor using TEOS Gate Dielectrics with RTN2O Annealing,” 2007 211th ECS (Electrochemical Society) Meeting (2007), Chicago, USA.
  23. Chyuan Haur Kao, C. S. Lai, M. C. Tsai, C. S. Huang, T. M. Fan, “Fabricated Ge Nanocrystals with Rapid Thermal Annealing on Poly-SiGe,” 2007 211th ECS (Electrochemical Society) Meeting (2007), Chicago, USA.
  24. Chao Sung Lai, Chen Sheng Huang, K. M. Fan, T. M. Pan, Chyuan Haur Kao,  Z. G. Lin, C. S. Chang, and C.-P. Chou, “Nano-Charge-Trapping Devices Fabricated by One-Step Oxidation on Poly-SixGe1-x,“ 2006 IEEE SILICON NANOELECTRONICS WORKSHOP, Honolulu, HI, USA.
  25. Chyuan Haur Kao, C. S. Lai, W. H. Sung and H. K. Peng, ”Etching Enhancement of HfO2 by SF6 with O2 Ion-Bombardment”, 2006 International Electron Devices and Materials Symposium (IEDMS), Tainan, Taiwan, R.O.C.
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