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Dr. Chang, Ruey-Dar (Chairman)

Chang, Ruey-Dar



Nanoelectronic device and technology






Material Analysis Lab.(E0808)


  • Ph.D., University of Texas at Austin, U.S.A. ( 1998/8 )
  • M.S., National Chiao Tung University, R.O.C.( 1990/6 )
  • B.S., National Cheng Kung University, R.O.C.( 1988/6)


  •  Chang Gung University ( 1998 - )
  • Vanguard International Semiconductor Corporation (1994 – 1995)
  • Electronics Research and Service Organization/Industrial Technology Research Institute (ERSO/ITRI) (1990 – 1994)


2009 Spring

  • Semiconductor device design
  • Simulation of semiconductor processing and devices  
  • Semiconductor laboratory

2010 Fall

  • Introduction to computer science
  • Structures and properties of materials
  • Semiconductor laboratory


  • TCAD
  • Semiconductor device design
  • Material analysis


Chang, Ruey-Dar received the B.S. degree in materials engineering from National Cheng Kung University, Tainan Taiwan, the M.S. degree from the Institute of Electronics, National Chiao Tung Uniersity, Hsinchu Taiwan, and Ph.D. degree in electrical engineering from the University of Texas at Austin in 1988, 1990, and 1998, respectively.

From 1990 to 1994, he was with the Electronics Research and Service Organization/Industrial Technology Research Institute (ERSO/ITRI - 工研院電子所), Hsinchu, where he was engaged in the development of process simulation and DRAM devices under the Submicron Project (次微米計畫).In 1994, he joined the Vanguard International Semiconductor Corporation (世界先進積體電路), Hsinchu, where he was responsible for DRAM device design and TCAD.

Since 1998, he has been with the Department of Electronics Engineering, Chang Gung University (長庚大學), Taoyuan, Taiwan, where he is an Associate Professor.  He currently works on CMOS process modeling, doping profile characterization, TFT technology modeling and power devices.

Publication List

Journal articles & book chapters:

  1. R. D. Chang*, Y. T. Ling, T. Liu, J. R. Tsai, and C. C. Ma, “Diffusion of indium implanted in silicon oxides”, Jpn. J. Appl. Phys. Vol. 48, p. 056501, 2009. 
  2. R. D. Chang* and J. R. Tsai, “Loss of phosphorus due to interface segregation at Si/SiO2 interfaces: Experiment and modeling”, J. Appl. Phys. Vol. 103, p. 053517, 2008.
  3. R. D. Chang*, J. R. Tsai, and L. W. Ho, "Elucidating the mechanism of transient loss of phosphorus due to interface segregation", Appl. Phys. Lett. Vol. 88, p. 211914, 2006.

Conference & proceeding papers:

  1. Ruey-Dar Chang, Jung-Ruey Tsai, and Chia-Chi Ma, “Time evolution of phosphorus dose loss due to interface segregation”, IEEE International conference on advanced thermal processing of semiconductors, Albany, NY, 2009.
  1. J. R. Tsai, L. W. Ho, S. H. Lin, T. C. Chang, M. D. Shieh, H. C. Lin, J. P. Lin, W. S. Feng, and R. D. Chang, "Transient behavior of phosphorus dose loss and modeling of dopant segregation at the Si/SiO2 interface", International Electron Device Meeting (IEDM), San Francisco, CA, 2004.



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