Dr. Siddheswar Maikap

Dr. Siddheswar Maikap (麥凱)
Associate Professor
Group: Nano-Electronics and Devices
Tel: 5785
E-mail:
sidhu@mail.cgu.edu.tw
LAB: Thin Film Nano Tech. Lab (E0809)
Educations:
1. Ph.D., Indian Institute of Technology, Kharagpur, India (1998/01~2003/02)
2. M. Sc., Vidyasagar University, Midnapore, West Bengal, India (1993-1995)
Experiences:
1. Associate Professor, Department of Electronic Engineering, Chang Gung University, Taiwan, R.O.C. (2009/08-till date)
2. Assistant Professor, Department of Electronic Engineering, Chang Gung University, Taiwan, R.O.C. (2006/06-2009/07)
3. Engineer, Electronics and Opto-Electronics Research Lab., Industrial Technology Research Institute, Hsinchu, Taiwan, R.O.C. (2004/08-2006/06)
4. Postdoc, Department of Electrical Engineering, National Taiwan University, Taiwan, R.O.C. (2003/02-2004/07)
5. Researcher, Center for Microstructure Science of Materials, Seoul National University, South Korea (2001/09-2002/12)
6. Research Assistant, Indian Institute of Technology, Kharagpur, India (1995~1997/12)
Courses:
Solid-State Device Physics
Advanced Memory Devices
Nanoscale Device Physics
Nanostructure Materials and Nanotechnology
Fundamentals of Complex Analysis
Introduction to Engineering
High-k Gate Dielectrics and Its Applications
Basic Electronic Circuit Experimental
Specializations:
Biography:
S. Maikap was born in Contai, Midnapore, West Bengal, India on 28th
October, 1968. He received the Ph. D degree in Physics & Meteorology, Indian
Institute of Technology (IIT), Kharagpur, India, in Feb. 2003. He developed low
temperature oxides on strained SeGe layers for high mobility MOSFET
applications. He received the B. Sc. (Contai P. K. College) and M. Sc. degrees
in Physics from the Vidyasagar University, West Bengal, India, in 1993 and 1995,
respectively. He focused in his M. Sc. thesis on electronic transport through
multi-level quantum wells. He was a Research Assistant in Cryogenic Engineering
and Department of Electrical and Electronic Communication Engineering, IIT,
Kharagpur, from 1995 to 1997. He developed low temperature polymer material
thermal conductivity and metal-oxide-semiconductor capacitors. From 2001 to
2002, he was a Researcher in Center for Microstructure Science of Materials,
Seoul National University, South Korea. In this period 2001-2002, his research
topic was Cu charged cluster formation in physical vapor deposition. He has
developed also Ge nanocrystal for flash memory and high-k gate dielectrics on
strained SiGe layers for nanoscal high mobility MOSFET applications. From 2003
to July 2004, he was working as a Post-doctoral Fellow with the Department of
Electrical Engineering, National Taiwan University, Taiwan. He developed
strained Si CMOS in EOL/ITRI, Hsinchu, Taiwan. He was an Engineer in EOL/ITRI,
Hsinchu, Taiwan from 2004-2006. He developed Atomic Layer Deposited (ALD) metal
nanocrystal, high-k multi-layers for high-performance flash memory applications.
He joined
as an Assistant Professor in
Department of Electronic Engineering, Chang Gung University, Tao-Yuan since July
2006. He was an Associate Professor in the same University from 2009-till date.
His current research interests include the fabrication and characterization of
nanoscale nonvolatile memory devices and Biosensors .
International Journal Papers:
1.
S. Maikap,
L. K. Bera, S. K. Ray and C. K. Maiti, “NO/O2/NO plasma grown
oxynitride films on strained-Si1-xGex”,
Electron.
Lett., vol. 35, pp. 1202-1203, 1999. (SCI
Impact Factor=1.004)
2.
S. Maikap,
L. K. Bera, S. K. Ray, S. John, S. K. Banerjee and C. K. Maiti, “Electrical
characterization of Si/ Si1-xGex/Si quantum well
heterostuctures using a MOS capacitor”,
Solid-State. Electron., vol. 44, pp. 1029-1034, 2000. (SCI
Impact Factor=1.440)
3.
S. Maikap,
S. K. Ray, S. John, S. K. Banerjee and C. K. Maiti, “Electrical characterization
of ultrathin gate oxides on
Si/SiGeC/Si quantum well heterostructures”,
Semicond. Sci. Technol.,
vol. 15, pp. 761-765, 2000. (SCI
Impact Factor=
1.333)
4.
L. K. Bera, B. Senapati, S.
Maikap and C. K. Maiti, “Effects of O2/N2O-plasma
treatment on nitride films on strained-Si”,
Solid-State Electron., vol. 44, pp.
1533-1536, 2000. (SCI
Impact Factor=1.440)
5.
B. Senapati, S. Samanta, S.
Maikap, L. K. Bera and C. K. Maiti, “Effects of NO-plasma treatment on the
electrical properties of TEOS-deposited silicon dioxides on strained- Si1-xGex
layers”, Appl. Phys. Lett.,
vol. 77, pp. 1840-1842, 2000. (SCI
Impact Factor=3.841)
6.
C. K. Maiti, L. K. Bera, S.
Maikap, S. K. Ray, R. Kesavan, V. Kumar and N. B. Chakrabarti, “Growth of
silicon-germanium alloy layers”, Defence
Scence Journal, vol. 50, pp. 299-315, 2000. (SCI
Impact Factor=0.304)
7.
G. S. Kar, S. Maikap, A.
Dhar and S. K. Ray, “Schottky diode on Si/SiGeC quantum well heterostructures
for long wavelength IR detector”, Proc. of SPIE Int. Soc, Opt. Eng, vol. 4417, pp. 366-371, 2001.
(SCI
Impact Factor=0.754)
8.
S. Maikap,
B. Senapati and C. K. Maiti, “Technology CAD of SiGe-HFETs”,
Defence Science Journal, vol. 51, pp.
195-197, 2001. (SCI
Impact Factor=
0.304)
9.
S. Maikap,
S. K. Ray, S. K. Banerjee and C. K. Maiti, “Electrical properties of O2/NO-plasma
grown oxynitride films on partially strain compensated Si/Si1-x-yGexCy/Si
heterolayers”, Semicond. Sci. Technol.,
vol. 16, pp. 160-163, 2001. (SCI
Impact
Factor=
1.333)
10.
L. K. Bera, B. Senapati, S.
Maikap and C. K. Maiti, “Determination of density and distribution of
high-voltage stress-induced traps in O2-, NO- and NO/O2/NO-plasma
grown oxides on strained Si", Solid-State
Electron., vol. 45, pp. 379-383, 2001. (SCI
Impact Factor=1.440)
11.
S. K. Ray, S. Maikap, S.
K. Samanta, S. K. Banerjee and C. K. Maiti, “Charge trapping characteristics of
ultrathin oxynitrides on Si/Si1-x-yGexCy/Si
heterolayers”, Solid-State Electron.,
vol. 45, pp. 1951-1955, 2001. (SCI
Impact
Factor=1.440)
12.
S. K. Samanta, S. Maikap,
L. K. Bera, H. D. Banerjee and C. K. Maiti, “Effect of post-oxidation annealing
on the electrical properties of deposited oxide and oxynitride films on
strained-Si0.82Ge0.18 layers”,
Semicond. Sci. Technol., vol. 16, pp. 704-707, 2001. (SCI
Impact Factor=1.333)
13.
G. S. Kar, S. Maikap, S.
K. Ray, S. K. Banerjee and N. B. Chakrabarti, “Effective mobility and alloy
scattering in strain compensated SiGeC inversion layer”,
Semicond. Sci. Technol., vol. 17, pp. 471-475, 2002. (SCI
Impact Factor=1.333)
14.
G. S. Kar, S. Maikap, S.
K. Banerjee and S. K. Ray, “Hole velocity overshoot in partially strain
compensated Si0.793Ge0.2C0.007 inversion
layers”, Electron. Lett., vol. 38, pp.
141-142, 2002. (SCI
Impact
Factor=1.004)
15.
R. Mahapatra, S. Maikap,
G. S. Kar and S. K. Ray, “Electrical properties of plasma grown gate oxides on
tensile strained Si1-yCy layers”,
Electron. Lett. vol. 38, pp. 1000-1001, 2002. (SCI
Impact Factor=1.004)
16.
G. S. Kar, S. Maikap, S.
K. Banerjee, S. K. Ray, “Series resistance and mobility degradation factor in C
incorporated SiGe heterostructure p MOSFETs”,
Semicond. Sci. Technol. vol. 17, pp. 938-941, 2002. (SCI
Impact Factor=1.333)
17.
S. Nandi, Won-Kook Choi, Young S. Noh, Min S. Oh,
S. Maikap, Nong M. Hwang, Doh-Y. Kim,
S. Chatterjee, S. Samanta, and C. K. Maiti, “Investigations on Ta2O5/ZnO
insulator-semiconductor interfaces”,
Electron. Lett. vol. 38, pp. 1390-1392, 2002. (SCI
Impact Factor=1.004)
18.
S. K. Samanta, S. Maikap,
S.Chatterjee, C.K.Maiti, “Minority carrier lifetime and diffusion length in Si1-x-yGexCy
heterolayers”, Solid-State Electron. vol. 47, pp. 893-897, 2002. (SCI
Impact Factor=1.440)
19.
S. Chatterjee, S. Nandi, S.
Maikap, S. K. Samanta and C. K. Maiti, “Electrical properties of deposited
ZrO2 films on ZnO/n-Si substrates”,
Semicond. Sci. Technol, vol. 18, pp.1-5, 2003. (SCI
Impact Factor=1.333)
20.
S. K. Samanta, S. Chatterjee,
S. Maikap, L. K. Bera, H. D.
Banerjee and C. K. Maiti, “films grown on strained- Si1-xGex
substrates”, J. Appl. Phys., vol. 93,
pp. 2464-2471, 2003. (SCI
Impact
Factor=2.079)
21.
Y. S. Noh, S. Chatterjee, S. Nandi, S. K. Samanta, C.K. Maiti,
S. Maikap, W.-K. Choi,
“Characteristics of MIS capacitors using Ta2O5 films
deposited on ZnO/p-Si, Microelectron. Engg.
vol. 66, pp. 637-642, 2003. (SCI
Impact Factor=1.575)
22.
R. Mahapatra, Je Hun Lee,
S.
Maikap, G. S. Kar, A. Dhar, N. M. Hwang, D. Y. Kim, B. K. Mathur and S. K.
Ray, “Electrical and interfacial characteristics of ultra-thin ZrO2
gate dielectrics on strain compensated SiGeC/Si heterostructure”,
Appl. Phys. Lett.
vol. 82, pp. 2320-2322, 2003. (SCI
Impact Factor=3.841)
23.
R. Mahapatra, S. Maikap,
Je Hun Lee, G. S. Kar, A. Dhar, B.
K. Mathur, N. M. Hwang, D. Y. Kim and S. K. Ray, “Effects of interfacial
nitrogen on the structural and electrical properties of ultra thin ZrO2
gate dielectrics on partially strain compensated SiGeC/Si heterolayers”,
Appl. Phys. Lett, vol. 82, pp.
4331-4333, 2003. (SCI
Impact
Factor=3.841)
24.
Je-Hun Lee, S. Maikap,
Doh. Y. Kim, R. Mahapatra, S. K. Ray, Y. S. Noh and W.-K. Choi, “Characteristics
of ultra-thin HfO2 gate dielectrics on strained-Si0.74Ge0.26
layers”, Appl. Phys. Lett,
vol. 83, pp. 779-781, 2003. (SCI
Impact Factor=3.841)
25.
R. Mahapatra, S. Maikap,
Je Hun Lee, G. S. Kar, A. Dhar, Doh Y. Kim, D. Bhattacharya and S. K. Ray,
“Structural and electrical characteristics of the interfacial layer of
ultra-thin ZrO2 films on partially strain compensated Si0.69Ge0.3C0.01
layers”, J. Vac. Sci. Technol. A, vol.
21(5), pp.1758-1764, 2003. (SCI
Impact Factor=1.291)
26.
C. K. Maiti, S. Maikap,
S. Chatterjee, S. K. Nandi and S. K. Samanta, “Hafnium oxide gate dielectric for
strained-Si1-xGex”,
Solid-State Electron, vol. 47, pp. 1995-2000, 2003. (SCI
Impact Factor=1.440)
27.
K. Das, S. Maikap, A.
Dhar, B. K. Mathur and S. K. Ray, “Metal-oxide-semiconductor structure with Ge
nanocrystals for memory device applications”,
Electron. Lett., vol.
39, pp. 1865-1866, 2003. (SCI
Impact
Factor=1.004)
28.
R. Mahapatra, G. S. Kar, S. K. Ray, and
S. Maikap, “Effect of temperature on the electrical properties of
plasma grown oxides on Si0.993C0.007 layers”,
J. Mat. Sci.: Mat. Electron, vol. 15,
pp. 43-46, 2004. (SCI Impact Factor=0.927)
29.
S. K. Samanta, S Chatterjee,
S. Maikap and C. K. Maiti, “Ultrathin oxynitride films on strained SiGe
layers by a three-step NO/O2/NO process”,
Solid-State Electron, vol. 48, pp. 91-97, 2004. (SCI
Impact Factor=1.440)
30.
S. Maikap,
Je Hun Lee and Doh Y. Kim, R. Mahapatra, S. K. Ray, Jae Hoon Song, Y. S. No and
Won Kook Choi, “Physical and electrical properties of ultrathin HfO2/HfSixOy
stacked gate dielectrics on compressively strained Si0.74Ge0.26/Si
heterolayers”, J. Vac. Sci. Technol. B,
vol. B
22(1), pp. 52-56, 2004. (SCI
Impact Factor=1.271)
31.
S. Maikap,
C.-Y. Yu, S.-R. Jan, M. H. Lee, and C. W. Liu, “Mechanically strained
strained-Si NMOSFETs,” IEEE Electron Dev.
Lett., vol. 25, pp. 40-42, 2004. (SCI
Impact
Factor=2.719)
32.
K. Das, M. NandaGoswami, R. Mahapatra, G. S. Kar, A
Dhar, H. N. Acharya, S. Maikap,
Je-Hun Lee and S. K. Ray, “Charge storage and photoluminescence characteristics
of silicon oxide embedded Ge
nanocrystals trilayer structure,”
Appl. Phys. Lett., vol. 84, pp.
1386-1388, 2004. (SCI
Impact
Factor=3.841)
33.
F. Yuan, S. R. Jan, S.
Maikap, Y. H. Liu, C. S. Liang, and C. W. Liu, “ Mechanically strained
Si/SiGe HBTs”, IEEE Electron Dev. Lett., vol. 25, pp. 483-485, 2004. (SCI
Impact Factor=2.719)
34.
W. C. Hua, M. H. Lee, P. S. Chen,
S. Maikap, C. W. Liu and K. M. Chen, “Ge outdiffusion
effect on flicker noise in strained-Si NMOSFETs”,
IEEE Electron Dev. Lett., vol. 25, pp.
693-695, 2004. (SCI
Impact
Factor=2.719)
35.
C. W. Liu, M. H. Lee, Y. C. Lee, P. S. Chen, C. Y. Yu, J. Y. Wei,
S. Maikap, “Evidence of Si/ SiGe
heterojunction roughness scattering,”
Appl. Phys. Lett., vol. 85, pp. 4947-4949, 2004. (SCI
Impact Factor=3.841)
36.
S. K. Ray, R. Mahapatra, S.
Maikap, A. Dhar, D. Bhattacharya, and J. H. Lee,
“Ultrathin HfO2 gate dielectrics on partially strain compensated
SiGeC/Si heterostructure”, Materials
Science in Semiconductor Processing, vol. 7, pp. 203-208, 2004.
(SCI
Impact Factor= 0.650)
37.
R. Mahapatra,
S. Maikap, A. Dhar, B. K. Mathur, and S. K. Ray, “Characteristics of
high-k
ZrO2 gate dielectrics on O2/N2O plasma treated
Si0.69Ge0.3C0.01/Si heterolayers”,
Ferroelectrics, vol. 329, pp. 101-105,
2005. (SCI
Impact
Factor=
0.512)
38.
R. Mahapatra,
S. Maikap, G. S. Kar and S. K. Ray,
“Ultrathin oxynitride films grown on Si0.74Ge0.26/Si
heterolayers using low energy plasma source nitrogen implantation”,
Solid-State Electron., vol. 49, pp.
449-452, 2005. (SCI
Impact
Factor=1.440)
39.
S. Maikap,
J. H. Lee, R. Mahapatra, S. Pal, Y. S. No, W. K. Choi, S. K. Ray, and D. Y. Kim,
“Effects of interfacial NH3/N2O plasma treatment on the
structural and electrical properties of ultrathin HfO2 gate
dielectrics on p-Si substrates”,
Solid-State Electron., vol. 49, pp. 524-528, 2005. (SCI
Impact Factor=1.440)
40.
“Invited review paper”
C. W. Liu, S. Maikap, and C. -Y. Yu,
“Mobility-enhancement technologies”, IEEE
Circuits and Devices Magazine, vol. 21(3), pp. 21-36, 2005. (SCI
Impact Factor=1.18)
41.
K. C. Liu,
S. Maikap, and P. S. Chen, “Characteristics of ultrathin Hf silicate
gate dielectrics on
Si0.9954C0.0046/Si heterolayers”,
Jpn. J. Appl. Phys., vol. 44, pp.
2447-2449, 2005. (SCI
Impact
Factor=1.024)
42.
P. J. Tzeng,
S. Maikap, C. S. Liang, P. S. Chen, and L. S. Lee, “Physical and
reliability characteristics of Hf based gate dielectrics on
strained SiGe MOS
devices”, IEEE Trans. Device and Material
Reliability, vol. 5, pp. 168-176, 2005. (SCI
Impact
Factor=1.503)
43.
K. C. Liu,
S. Maikap,
C. H. Wu, Y. S. Chang, and P. S. Chen, “metal pre-deposition on the physical and
electrical properties of ultrathin HfO2 films on Si0.9954C0.0046/Si
heterolayers”, Semicond. Sci. Technol.,
vol. 20, pp. 1016-1021, 2005. (SCI
Impact
Factor=1.333)
44.
W. C. Lee, Y. J. Lee,
Y.D. Wu, P. Chang, Y.L. Huang,
Y.L. Hsu, J.P. Mannaerts, R.L. Lo, F.R. Chen,
S. Maikap, L.S. Lee, W.Y. Hsieh, M.J. Tsai, S.Y. Lin, T. Gustffson,
M. Hong, J. Kwo, “MBE-grown high-k gate dielectrics of HfO2 and (Hf–Al)O2
for Si and III–V semiconductors nano-electronics”, J. Crystal. Growth, vol. 278,
pp. 619-623, 2005.
(SCI
Impact Factor=
1.746)
45.
M. H. Liao, S. T. Chang, M. H. Lee,
S. Maikap, and C. W. Liu, “Abnormal
hole mobility of biaxial strained-Si”, J.
Appl. Phys., vol. 98, pp. 066104-1 to 3, 2005.
(SCI
Impact Factor=2.079)
46.
C. H. Lin, Z. Pei,
S. Maikap, C. C. Wang, C. S. Lu, L.
S. Lee and M. J. Tsai, “The effect of strain on p channel metal oxide
semiconductor field effect transistor current enhancement using stress
modulation silicon nitride films”, Appl.
Phys. Lett., vol. 87, 262109, 2005.
(SCI
Impact Factor=3.841)
47.
J. Y. Wei,
S. Maikap,
M. H. Lee, C. C. Lee and C. W. Liu, “Hole confinement at Si/SiGe
heterojunction of strained-Si N- and
PMOS devices”, Solid-State Electron.,
vol. 50, pp. 109-113, 2006. (SCI
Impact
Factor=1.440)
48.
R. Mahapatra,
S. Maikap, Je Hun Lee and S. K. Ray,
“Characteristics of ZrO2
gate dielectrics on O2
and N2O plasma treated partially strain compensated Si0.69Ge0.3C0.01
layers”, J. Appl. Phys., vol.100,
034105, 2006. (SCI
Impact
Factor=2.079)
49.
“Invited review paper”
S. K. Ray, R. Mahapatra, and S. Maikap,
“High-k
gate oxide for
silicon heterostructure MOSFET devices”,
J. Mater. Sci.: Mater. Electron., vol. 17. pp. 689-710, 2006. (SCI Impact
Factor=0.927)
50.
R. Mahapatra, S. Maikap, and S. K. Ray, “
Electrical properties of ultrathin HfO2 gate dielectrics on
partially strain compensated SiGeC/Si heterostructures”, J. Electroceram., vol.
16, pp. 545-548, 2006. (SCI, Impact Factor=0.676).
51.
C.Y. Peng, F. Yuan, C. Y. Yu, P. S.
Kuo, M. H. Lee, S. Maikap, C. H. Hsu,
and C. W. Liu,
“Hole mobility enhancement of Si0.2Ge0.8 quantum
well channel on Si”, Appl. Phys. Lett.,
vol. 90, 012114, 2007. (SCI
Impact Factor=3.841)
52.
S. Maikap,
M. H. Lee, S. T. Chang, and C. W. Liu, “Characteristics of strained germanium
p-and n channel
field effect transistors on Si (111)
substrate”, Semicond. Sci. Technol., vol. 22, pp. 342-347, 2007. (SCI
Impact Factor=1.333)
53.
S. Maikap,
P. J. Tzeng,
T. Y. Wang, H. Y. Lee, C. H. Lin, C. C.
Wang, L. S. Lee, J. R. Yang, and M. J. Tsai,
“HfO2/HfAlO/HfO2 nanolaminate
charge trapping layers for high performance nonvolatile memory device
applications”, Jpn. J. Appl. Phys., vol. 46, No. 4A, pp. 1803-1807, 2007.
(SCI Impact Factor=1.024)
54.
C. H. Lin, C. C. Wang, P. J. Tzeng,
S. Maikap, H. Y. Lee, L. S. Lee, and M. J. Tsai, “TiO2 nanocrytal
prepared by atomic layer deposition system for nonvolatile memory application”,
Jpn. J. Appl. Phys., vol. 46, pp. 2523-2326, 2007. (SCI
Impact Factor=1.024)
55.
H. Y. Lee, P. S. Chen, C. C. Wang, S. Maikap, P. J. Tzeng,
C. H. Lin, L. S. Lee, and M. J. Tsai, “Low power switching of nonvolatile
resistive memory using hafnium oxide”, Jpn. J. Appl.
Phys., vol.46, pp. 2175-2179, 2007. (SCI
Impact Factor=1.024)
56.
S. Maikap, T. Y. Wang, P. J. Tzeng, C. H. Lin, L. S. Lee, J. R. Yang, and M. J.
Tsai, “
Charge storage characteristics of atomic layer deposited RuOx
nanocrystals”, Appl. Phys. Lett., vol. 90, 253108, 2007; and it has been
selected for the
July 2, 2007 issue of Virtual Journal of Nanoscale Science & Technology.
(SCI
Impact Factor=3.841)
57.
S. Maikap,
T. Y. Wang, P. J. Tzeng,
C. H. Lin, T. C. Tien, L. S. Lee, J. R. Yang, and M. J. Tsai, “Band offsets and charge storage
characteristics of atomic layer deposited high κ HfO2/TiO2
multilayers”, Appl. Phys. Lett., vol. 90,
262901,
2007. (SCI Impact Factor=3.841)
58.
S. Maikap, T. Y. Wang, H. Y. Lee,
P.J. Tzeng, C. C. Wang,
L. S. Lee, K. C. Liu, J. R. Yang and M. J. Tsai, “ Charge trapping
characteristics of atomic layer deposited HfO2 films with Al2O3
as a blocking oxide for high density nonvolatile memory device applications”
Semicond. Sci.
Technol., vol. 22, pp. 884-889, 2007. (SCI
Impact Factor=1.333)
59.
S. Maikap, P. J. Tzeng, H. Y. Lee, C. C. Wang, T.
C. Tien, L. S. Lee, and M. J. Tsai, “Physical and electrical characteristics of
atomic layer deposited TiN nanocrystal memory capacitors”, Appl. Phys. Lett.,
vol. 91, 043114, 2007; and it has been selected for the
August 13, 2007 issue of
Virtual Journal of Nanoscale Science & Technology. (SCI
Impact
Factor=3.841)
60.
S. Maikap,
P. J. Tzeng, T. Y. Wang, C. H. Lin, L. S. Lee, J. R. Yang, and M. J. Tsai,
“Memory characteristics of atomic layer deposited high k HfAlO nanocrystal
capacitors”, Electrochem. and Solid State Lett, vol. 11, number 4, pp.
K50 K52, 2008; and it has been selected
for the February 18, 2008 issue of Virtual Journal of Nanoscale Science &
Technology. (SCI Impact factor=1.981)
(Financial
supported by NSC-96-2221-E-182-047)
61.
S. Maikap,
T. Y. Wang, P. J. Tzeng, H. Y. Lee, C. H. Lin, C. C.
Wang, L. S. Lee, J. R. Yang, and M. J. Tsai, “Low voltage operation of high κ HfO2/TiO2/Al2O3
single quantum well for nanoscale flash memory device applications”, Jpn. J.
Appl. Phys., vol. 47, No. 3, pp. 1818-1821, 2008. (SCI Impact Factor=1.024)
(Financial supported by
NSC-96-2221-E-182-047)
62.
M. H. Lee, S. T. Chang,
S. Maikap, K. W. Shen,
and W. C. Wang, “Short channel effect improved strained Si:C source/drain
PMOSFETs”, Appl. Surf. Sci., vol. 254, pp. 6144-6146, 2008.
(SCI
Impact factor=1.795)
63.
M. H. Lee, S. T. Chang, S. Maikap, and C. F.
Huang, “The role of carbon on performance of strained-Si:C surface channel
NMOSFETs”, Solid-Stale Electron., vol.
52, pp. 1569-1572, 2008. (SCI Impact
Factor=1.440)
64.
M. H. Lee, S. T. Chang, C. Y. Peng, B. F. Hsieh,
S. Maikap, and S. H. Liao, “Studying the impact of carbon on device
performance for strained Si MOSFETs”, Thin
Solid Film., vol. 517, pp. 105-109, 2008. (SCI
Impact Factor= 1.935)
65.
S. Maikap,
S. Z. Rahaman, and T. C. Tien, “Nanoscale
(EOT=5.6 nm) nonvolatile memory characteristics using n Si/SiO2/HfAlO
nanocrystals/Al2O3/Pt capacitors”, IOP
Nanotechnology, vol. 19, pp. 435202 (5 pages), 2008. (SCI
Impact Factor=3.652)
(Financial
supported by NSC-96-2221-E-182-047)
66.
S. Maikap, T. Y. Wang, H. Y. Lee, S. S. Tzeng, P. J. Tzeng, C. C. Wang, C. H. Lin,
T. C. Tien, L. S. Lee, P. W. Li, J. R. Yang and M. J. Tsai,
“TiN nanocrystal flash memory devices”, Int. J.
Nanomanufacturing, vol. 2, No. 5, pp. 407-419, 2008. (SCI)
67.
D. Panda, S. Maikap, A. Dhar, and S. K. Ray,
“Memory characteristics of nickel nanocrystals with high
k dielectric tunneling barriers”,
Electrochemical and Solid State Lett.,
vol. 12 (1), pp. H7-H10, 2009.
(SCI
Impact factor=1.981)
68.
S. Maikap,
Atanu Das, T. Y. Wang, T. C. Tien, and L. B. Chang, “High
k
HfO2 nanocrystal memory capacitors prepared by phase separation of
atomic-layer-deposited HfO2/Al2O3
nano-mixtures”, Journal of
The Electrochemical Society, vol.
156, K28 K32, 2009
; and it has been
selected for the February 9, 2009 issue of Virtual Journal of Nanoscale
Science & Technology. (SCI
Impact factor=2.427)
(Financial supported by
NSC-96-2221-E-182-047)
69.
Atanu Das, S. Maikap, W. C. Li, L. B. Chang,
and J. R. Yang, “
Physical and memory
characteristics of atomic layer deposited high k HfAlO nanocrystal capacitors
with IrOx metal gate”, Jpn. J. Appl. Phys., vol. 48, pp. 05DF02 to 1 to 5, 2009. (SCI
Impact factor =1.024)
(Financial
supported by NSC-97-2221-E-182-051-MY3)
70.
T. C.
Tien, L. C. Lin, L. S. Lee, C. J. Hwang,
S. Maikap, and Y. M. Shulga, “Analysis of weakly bonded oxygen in HfO2/SiO2/Si
stacks by using HRBS and ARXPS”, J. Mater. Sci: Mater. Electron., July 15, 2009.
(SCI
Impact factor =1.471)
71.
M. H. Lee, S. T. Chang,
S. Maikap, C. Y. Peng, and C. H. Lee, “High Ge content of SiGe
Channel pMOSFETs on Si (110) surfaces”,
IEEE Electron Dev. Lett., vol. 32, pp. 141-143, 2010.
(SCI
Impact Factor=2.719)
72.
S. Z.
Rahaman, S. Maikap, H. C. Chiu, C. H.
Lin, T. Y. Wu, Y. S. Chen, P. J. Tzeng, F. Chen, M. J. Kao and M. J. Tsai,
“Bipolar resistive switching memory using Cu metallic filament in Ge0.4Se
0.6 solid electrolyte”,
Electrochemical and Solid State Lett.,
vol. 13(5), pp. H159-H162, 2010. (SCI
Impact factor=1.981) (Financial supported by
NSC-97-2221-E-182-051-MY3)
73.
Atanu Das, S. Maikap,
C.-H. Lin, P.-J. Tzeng, T.-C. Tien, T.-Y. Wang, L.-B. Chang, J.-R. Yang, and
M.-J. Tsai, “Ruthenium oxide metal nanocrystal capacitors with high-k
dielectric tunneling barriers for nanoscale nonvolatile memory device
applications”, Microelectronics Engineering”, vol. 87, pp. 1821 to 1827, 2010.
(SCI
Impact Factor=1.575)
(Financial supported by
NSC-96-2221-E-182-047)
74.
S. Z.
Rahaman and S. Maikap, “Low power
resistive switching memory using Cu metallic filament in Ge0.2Se0.8
solid electrolyte”, Microelectronics
Reliability, vol. 50, pp. 643-646, 2010.
(SCI
Impact Factor=1.101)
(Financial
supported by NSC-97-2221-E-182-051-MY3)
75.
S. Maikap,
A. Prakash, W. Banerjee, Anirban Das and C. S. Lai, “Characteristics of pH
sensors fabricated by using protein mediated CdSe/ZnS quantum dots”,
Microelectronics Reliability, vol. 50,
pp. 747-752, 2010.
(SCI
Impact Factor=1.101)
76.
A.
Prakash, S. Maikap, H. Y. Lee, W. S.
Chen, F. Chen, M. J. Tsai, and M. J. Kao, “Improved bipolar resistive switching
memory using W/TaOx/W structure”,
Advanced Materials Research, vol. 159,
pp. 333-337, 2011.
(SCI
Impact Factor=0.483)
(Financial
supported by NSC-98-2221-E-182-052-MY3)
77.
W. C.
Li, W. Banerjee, S. Maikap, and J. R.
Yang, “Particle size and morphology of iridium oxide nanocrystals in nonvolatile
memory device”, Materials Transactions,
vol. 52, No. 3, pp. 331-335, 2011.
(SCI
Impact
Factor=0.787)
78.
W.
Banerjee, S. Z. Rahaman, A. Prakash, and
S. Maikap, “High κ Al2O3/WOx bilayer
dielectrics for low power resistive switching memory applications”,
Jpn. J. Appl. Phys.,
vol. 50, 10PH01,
2011.
(Financial
supported by NSC-97-2221-E-182-051-MY3)
(SCI
Impact Factor=1.024)
79.
S. Maikap,
W. Banerjee, T. C. Tien, T. Y. Wang, and J. R. Yang, “Temperature dependent
physical and memory characteristics of atomic layer deposited RuOx
metal nanocrystal capacitors”, Journal of
Nanomaterials, vol. 2011, ID: 810879, 2011. (Financial
supported by NSC-97-2221-E-182-051-MY3)
(SCI
Impact Factor=1.675)
80.
W.
Banerjee, S. Maikap, T. C. Tien, W.
C. Li, and J. R. Yang, “Impact of metal nanolayer thickness on tunneling oxide
and memory performance of core-shell iridium-oxide nanocrystals”,
J. Appl. Phys., vol. 110, 074309, 2011.
(Financial supported by
NSC-97-2221-E-182-051-MY3)
(SCI
Impact Factor=2.079)
81.
L. B.
Chang, A. Das, R. M. Lin, S. Maikap,
M. J. Jeng, and S. T. Chou, “An observation of charge trapping phenomena
GaN/AlGaN/Gd2O3/Ni Au structure”,
Appl. Phys. Lett., vol. 98, 222106,
2011.
(SCI
Impact
Factor=3.841)
82.
W.
Banerjee, S. Maikap, S. Z. Rahaman,
and A. Prakash, “Improved resistive switching memory characteristics using core
shell IrOx nano dots in Al2O3/WOx
bilayer structure”, J. Electrochem. Soc.,
vol. 159 (2), H177 H182, 2012.
(Financial
supported by NSC-97-2221-E-182-051-MY3)
(SCI
Impact Factor=2.427)
83.
W. Banerjee, S. Z.
Rahaman, and S. Maikap,
“Excellent uniformity and multilevel
operation in formation-free low-power resistive switching memory using IrOx/AlOx/W
cross-point”.,
Jpn. J. Appl. Phys.,
(in press) 2012.
(Financial supported by
NSC-98-2923-E-182-001-MY3)
(SCI
Impact Factor=1.024)
84.
S. Z. Rahaman, S.
Maikap,
S. K. Ray, H. Y. Lee, W. S. Chen, F. Chen, M. J. Kao and M. J. Tsai, “Record
resistance ratio and bipolar/unipolar resistive switching memory characteristics
using GeOx solid electrolyte”,
Jpn. J. Appl. Phys.,
(in press) 2012. (Financial
supported by NSC-98-2923-E-182-001-MY3)
(SCI
Impact Factor=1.024)
85.
D. Jana, S. Maikap, T. C. Tien, H. Y.
Lee, W. S. Chen, F. Chen, M. J. Kao, and M. J. Tsai, “Formation polarity
dependent improved resistive switching memory performance using IrOx/GdOx/WOx/W
structure”,
Jpn. J. Appl.
Phys., (in
press) 2012.
(Financial supported by
NSC-98-2221-E-182-052-MY3)
(SCI
Impact Factor=1.024)
86.
A.
Prakash, S. Maikap, C. S. Lai, H. Y.
Lee, W. S. Chen, F. Chen, M. J. Kao, and M. J. Tsai, “Improvement uniformity of
resistive switching parameters by selecting the electroformation polarity in IrOx/TaOx/WOx/W
structure”,
Jpn. J. Appl. Phys.,
(in press) 2012.
(Financial supported by
NSC-98-2221-E-182-052-MY3)
(SCI
Impact Factor=1.024)
87.
W. Banerjee,
S. Maikap, C. S. Lai, Y. Y. Chen, T.
C. Tien, H. Y. Lee, W. S. Chen, F. T. Chen, M. J. Kao, M. J. Tsai, and J. R.
Yang., “Formation
polarity dependent improved resistive switching memory characteristics using
nanoscale (1.3 nm) core-shell IrOx nano-dots”.,
Nanoscale Research Letters, (in press) 2012.
(Financial supported by
NSC-97-2221-E-182-051-MY3)
(SCI
Impact Factor=2.56)
88.
A.
Prakash, S. Maikap, C. S. Lai, T. C.
Tien, W. S. Chen, H. Y. Lee, F. T. Chen, M. J. Kao, and M. J. Tsai, “Bipolar
resistive switching memory using bilayer TaOx/WOx films”,
Solid-State Electron. (in press),
2012.
(Financial
supported by NSC-98-2221-E-182-052-MY3)
(SCI
Impact Factor=1.44)
89.
S. Z. Rahaman,
S. Maikap, W. S. Chen, H. Y. Lee, F.
Chen, T. C. Tien, and M. J. Tsai,
“Impact
of TaOx nanolayer at the GeSex/W interface on resistive
switching memory performance and investigation of Cu nanofilament”,
J. Appl. Phys.,
(in press), 2012.
(Financial supported by
NSC-97-2221-E-182-051-MY3)
(SCI
Impact Factor=2.079)
90.
D.
Jana, S. Maikap, W. Banerjee,
A. Prakash, S. Z. Rahaman,
T. C. Tien, W. S. Chen, H. Y. Lee, F. T. Chen, M. J. Kao, and M. J. Tsai, “Bipolar
resistive switching memory characteristics using IrOx/GdOx/WOx/W
structure”, International Journal of
Nanotechnology, (under review), 2011.
(Financial supported by
NSC-98-2221-E-182-052-MY3)
(SCI
Impact Factor=1.33)
International
Conference Papers:
1.
S. Maikap,
S. K. Ray and C. K. Maiti, “NO/O2/NO plasma grown oxynitride films on
silicon”, Proc. 10th Int.
Workshop on Physics of Semiconductor Devices (IWPSD), New Delhi, pp. 411-414
(1999).
2.
B. Senapati,
S. Maikap and C. K. Maiti,
“Deposition of stoichiometric SiO2 on silicon-germanium strained
layers”, Proc. 10th Int.
Workshop on Physics of Semiconductor Devices (IWPSD) , New Delhi, pp.
448-451 (1999).
3.
G. S. Kar, S.
Maikap, A. Dhar and S. K. Ray, “Schottky diode on Si/SiGeC quantum well
heterostructures for long wavelength IR detector”,
Photonics-2000, Kolkata, 2001.
4.
R. Mahapatra,
S. Maikap, G. S. Kar and S. K. Ray, “ Plasma grown gate oxides on
tensile-strained SiC/Si heterostructure”,
in the Proc. of 11th Int’l Workshop on Physics of Semiconductor Devices (IWPSD),
New Delhi, India, vol. 2, pp. 1118-1120 (2001).
5.
G. S. Kar, S.
Maikap, S. K. Ray, and N. B. Chakrabarti, “Computation of effective mobility
in buried channel heterostucture MOSFET”,
in the Proc. of 11th Int’l Workshop on Physics of
Semiconductor Devices (IWPSD), New Delhi, vol. 2, pp. 874-877 (2001).
6.
Y. S. Noh, S. Chatterjee, S. Nandi, S. K. Samanta, C.
K. Maiti, S. Maikap, W. K. Choi,”
Characteristics of MIS capacitors using Ta2O5 films
deposited on ZnO/p Si”, The 8th
IUMRS International Conference on Electronic Materials (IUMRS ICEM2002),
June 10-14, Xi'an, China, pp. 652-653 (2002).
7.
C. K. Maiti,
S. Maikap, S. K. Samanta, and K. S. Chari, “Design and simulation of
Hetero-FETs on SOI substrates”, Proc. of
XII th Int’l Workshop on the Physics of Semiconductor Device, Indian
Institute of Technology (IIT), Chennai, India, 2003.
8.
K. S. Chari,
S. Maikap, S. K. Samanta, and C. K. Maiti, “Design and simulation of
strained-SiGe channel p MOSFETs”, Proc. of
XII th Int’l Workshop on the Physics of Semiconductor Device, Indian
Institute of Technology (IIT), Chennai, India, 2003.
9.
R. Mahapatra,
S. Maikap, A. Dhar, B. K. Mathur and S. K. Ray, “Interfacial properties of
high-k HfO2 gate
dielectrics on strained Si0.74Ge0.26/Si
for heterostructure MOSFET applications”,
Proc. of XII th Int’l Workshop on the
Physics of Semiconductor Device, Indian Institute of Technology (IIT),
Chennai, India, pp. 447-449, 2003.
10.
R. Mahapatra,
S. Maikap, A. Dhar, B. K. Mathur and S. K. Ray, “Characteristics of high
k ZrO2 gate dielectrics on
O2/N2O plasma treated Si0.69Ge0.3C0.01/Si
heterolayers”, 4th Asian
meeting on
ferroelectrics, Indian Institute of Science (IISc), Bangalore, India, pp.
126, 2003.
11.
W. C. Hua, M. H. Lee, P. S. Chen,
S. Maikap, C. W. Liu and K. M. Chen,
“Comprehensive Flicker noise chracterization of the strained Si NMOSFETs,
Symposium on Nano Device Technology (SNDT),
2004.
12.
“Invited”
M. H. Lee, P. S. Chen, W. C. Hua, C. Y. Yu, Y. C. Lee,
S. Maikap, Y. M. Hsu, C. W. Liu, S. C. Lu, W.–Y. Hsieh and M.–J.
Tsai, “The noise characteristics of strained-Si MOSFETs”,
International SiGe Technology and
Device Meeting (ISTDM), Frankfurt (Oder), Germany, 16-19 May, 2004.
13.
W. G. Lee, Y. J. Lee, Y. D. Yu, P. Chang, Y. L. Hsu,
C. P. Chen, J. P. Mannaerts, S. Maikap,
C. W. Liu, L. S. Lee, W. Y. Hsieh, M. J. Tsai, S. Y. Lin, M. Hong, and J. Kwo,
“MBE grown high-k
gate dielectrics of HfO2 and (Hf-Al)O2 for Si and III-V
semiconductors nano-electronics”, MBE
Taiwan,
29th April-30rd April, 2004.
14.
W. J. Lee, Y. J. Lee, Y. L. Hsu, K. Y. Lee, C. H.
Chu, C. C. Huang, Y. L. Huang, T. Gustafsson, E. Garfunkel,
S. Maikap, L. S. Lee, S. Y. Lin, M.
Hong, and R. Kwo, “Demonstration of atomically abrupt interface
of HfO2 high
k
gate dielectrics on Si for nano CMOS”,
Taiwan International Conference on Nanotechnology,
30th June-3rd July, 2004.
15.
Y. S. Liu, S.
Maikap, P. S. Chen and K. C. Liu, “High
k
HfO2 gate dielectric for tensile strained-SiC alloy layers”,
Taiwan International Conference on Nanotechnology, 30th
June-3rd July, 2004.
16.
P. J. Tzeng,
S. Maikap, W. Z. Lai, C. S. Liang, P. S. Chen, L. S. Lee and C. W. Liu,
“Post oxidation annealing effects on the reliability of ALD HfO2
films on strained-Si0.8Ge0.2 layers”,
Proc. of 11th
IPFA, Taiwan, pp. 29-32, July 5-8, 2004.
17.
“Invited”
C. W. Liu, S. Maikap, M. H. Liao and
F. Yuan, “BiCMOS devices under mechanical strain”,
206th The
Electrochemical Society Meeting (ECS), Hawai, Oct.
2004.
18.
Y. S. Liu,
S. Maikap, P. S. Chen and K. C. Liu,
“Effect of Hf-metal pre-deposition on the electrical properties of HfO2
films on tensile strained Si0.9954C0.0046 layers”,
SSDM, Japan, pp. 538-539, 2004.
19.
S. K. Ray, R. Mahapatra,
S. Maikap, and J. H. Lee, “Ultrathin
HfO2 gate dielectrics on partially strain compensated SiGeC/Si
heterolayers”, E-MRS, France, 2004.
20.
K. C. Liu,
S. Maikap, S. Ray, P. S. Chen,
“Temperature dependence of electrical properties of HfO2 films on
strained SiC/Si heterolayers”, Fourth
International Conference of Silicon
Epitaxy and Heterostructures, May 23-26, Japan, 2005.
21.
R. Mahapatra,
S. Maikap, S. K. Ray, “Electrical
Properties of Ultrathin HfO2 Gate Dielectrics
on Partially Strain Compensated SiGeC/Si Heterostructures”,
3rd International Conference on
Materials for Advanced Processing Technologies (ICMAT 2005) & 9th
International Conference on Advanced Materials (ICAM 2005), 4th-7th
July, Singapore, 2005.
22.
C. Y. Peng, F. Yuan, M. H. Lee, C. Y. Yu,
S. Maikap, M. H. Liao, S. T. Chang,
and C. W. Liu, “Novel schottky barrier strained germanium PMOS”,
Semiconductor Device Research Symposium,
2005 International, Washington D.C., Dec. 7-9, pp. 84-85, 2005.
23.
S. Maikap,
P. J. Tzeng, L. S. Lee, H. Y. Lee, C. C. Wang, P. H. Tsai, K. S. Chang-Liao, W.
J. Chen, K. C. Liu, P. R. Jeng, and M. J. Tsai, “High
k
Hf based charge trapping layer with Al2O3
blocking oxide for high density flash memory”,
International Symposium on VLSI
Technology, Systems, and Applications (VLSI-TSA), April 24th-26th,
pp. 36-37, Hsinchu, Taiwan, 2006.
24.
“Invited”
S. Maikap, P. J. Tzeng, T. Y. Wang, C. H. Lin, H. Y. Lee, C. C. Wang, L. S. Lee,
J. R. Yang, and M. J. Tsai, “High performance flash memory devices”,
Symposium on Nano
Device Technology (SNDT), April 26th-28th , p.
16, Hsinchu, Taiwan, 2006.
25.
M. H. Lee, S. T. Chang,
S. Maikap, C. Y. Yu and C. W. Liu, “The interface properties of SiO2/strained
Si with carbon incorporation surface channel MOSFETs”, SiGe Technology and
Device Meeting, 2006. ISTDM 2006, Third International, May 15-17, pp. 1-2,
2006.
26.
H. Y. Lee, P. S. Chen, C. C. Wang, S. Maikap,
P. J. Tzeng, C. H. Lin, L. S. Lee, and M. J. Tsai, “Low power of nonvolatile
hafnium oxide resistive memory”, International Conference on Solid State
Devices and Materials ( SSDM), pp. 288-289, Japan, 2006.
27.
C. H. Lin, C. C. Wang, P. J. Tzeng, S. Maikap,
H. Y. Lee, L. S. Lee and M. J. Tsai, “TiO2 nanocrystal prepared by
ALD system at elevated temperature”, International Conference on Solid State
Devices and Materials ( SSDM), pp. 704-705, Japan, 2006.
28.
S. Maikap,
P. J. Tzeng, T. Y. Wang, C. H. Lin, H. Y. Lee, C. C. Wang,. L. S. Lee, J.
R. Yang and
M. J. Tsai,
“High
k
HfO2/Al2O3 nanolaminated charge trapping layers
for high performance flash memory device applications”, International
Conference on Solid State Devices and
Materials (SSDM), pp. 984-985, Japan, 2006.
29.
S. Maikap, P. J. Tzeng, T. Y.
Wang, C. H. Lin, H. Y. Lee, L. S. Lee, J. R. Yang, and M.-J. Tsai,
“Very low voltage operation of Al2O3/HfO2/TiO2/Al2O3
single quantum well memory
with good retention”, International Conference on Solid
State Devices and Materials (SSDM), pp. 582-583, Japan, 2006.
30.
S.
Maikap, P. J. Tzeng, S.
S. Tseng, C. H. Lin, H. Y. Lee, C. C. Wang, L. S. Lee, T. C. Tien,
S. C. Lo,
P. W. Li, M. J. Tsai, “High density and uniform ALD TiN nanocrystal flash
memory devices with large memory window and good retention”, International
Electron Devices and Materials Symposia
(IEDMS), pp. 85-86, Tainan, Taiwan, 2006. (Best Paper Award)
31.
S.
Maikap, P. J. Tzeng, S.
S. Tseng, T. Y. Wang, C. H. Lin, H. Y. Lee, C. C. Wang, T. C. Tien, L. S. Lee,
P. W. Li, J. R. Yang and
M. J. Tsai, “High k HfO2/TiO2/HfO2 multilayer
quantum well flash memory devices”,
International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA),
April 23th-25th , pp. 18-19, Hsinchu, Taiwan, 2007.
32.
T. Y.
Wang, S. Maikap, P. J. Tzeng, D. Panda, L. S. Lee, M. J. Tsai, and J. R.
Yang, “Effect of nano-grain on the memory characteristics of high-k
HfAlO charge trapping layers for nano-scale nonvolatile memory device
applications”, International Conference on Solid State
Devices and Materials (SSDM), pp. 464-465, Tsukuba, Japan, 2007.
33.
S.
Maikap, P. J. Tzeng,
T. Y. Wang, H. Y. Lee, C. H. Lin, S. C. Lo, L. S. Lee, J. R. Yang, M. J. Kao
and M. J. Tsai,
“Nanocrystal floating gate memory devices using atomic layer deposited TiN/Al2O3
nanolaminate layers”,
International Conference on Solid State Devices and Materials (SSDM),
pp. 240-241, Tsukuba, Japan, 2007.
34.
S.
Maikap,
T. Y. Wang, P. J. Tzeng, D. Panda, L. S. Lee, J. R.
Yang, M. J. Kao and M. J. Tsai, “Memory characteristics of atomic
layer deposited high k HfAlO nanocrystals”, 10th International
Conference on Advanced Materials (ICAM), International Union of Materials
Research Sicieties (IUMRS), 8-13 October, Bangalore, India, p. V-25, 2007.
35.
D.
Panda, S. Maikap, A. Dhar, and S. K. Ray, “Characteristics of nickel nanocrystals embedded in HfO2 matrix
for flash memory devices”, 10th International Conference on
Advanced Materials (ICAM), International Union of Materials Research Sicieties
(IUMRS), 8-13 October, Bangalore, India, p. V-21, 2007.
36.
M. H.
Lee, S. T. Chang, C. F. Huang, S. Maikap, K. W. Shen, R. S. Syu, and Y.
T. Liu, ”Strained Si:C Source/Drain NMOSFETs for Channel
Strain Enhancement”
Semiconductor Device Research Symposium, 2007
International, Washington D.C., Dec. 12-14, pp.
1-2, 2007.
37.
M. H.
Lee, S. T. Chang, S. Maikap, K. W. Shen and W. C. Wang, “Short
channel effect improved strained Si:C source/drain PMOSFETs”, Fifth
International Symposium on Control of Semiconductor Interfaces (ISCSI-V),
Hachioji, Tokyo, Japan, Nov. 12-14, pp. 203-204, 2007.
38.
S.
Maikap, W. Banerjee, P.
J. Tzeng, T. Y. Wang, C. H. Lin, T. C. Tien, L. S. Lee, J. R. Yang, M. J. Kao,
and M. J. Tsai, “Highly Thermally Stable and Reproducible of ALD RuO2
Nanocrystal Floating Gate Memory Devices with Large Memory Window and Good
Retention”, International Symposium on
VLSI Technology, Systems, and Applications (VLSI TSA), Hsinchu, Taiwan,
April 21-23, pp. 50-51, 2008.
(Financial
supported by NSC-96-2221-E-182-047)
39.
S. Z.
Rahaman, Y. R. Tsai, and S. Maikap, “Nanoscale nonvolatile memory devices
using high
k
HfO2/TiO2 multilayers”, 6th Asian Conference
on Electrochemistry in Taipei (ACEC2008), May 11-14, No. 0558, 2008. (Financial
supported by NSC-96-2221-E-182-047)
40.
W.
Banerjee and S. Maikap, “RuO2 metal nanocrystal memory
prepared at high temperature”,
6th Asian Conference on Electrochemistry in Taipei (ACEC2008),
May 11 to 14, No. 0560, 2008.
(Financial supported by
NSC-96-2221-E-182-047)
41.
Atanu
Das, S. Maikap, and L. B. Chang, “Memory characteristics of high
k
HfAlO nanomixtures”, 6th Asian Conference on Electrochemistry in
Taipei (ACEC2008), May 11 to 14, No. 0580, 2008.
(Financial supported by
NSC-96-2221-E-182-047)
42.
S.
Maikap, W. Banerjee, S.
Z. Rahaman, and Atanu Das, “Flash memory device characteristics of atomic layer
deposited crystallite Al2O3 films with large memory window
and long retention”, IEEE Silicon Nanoelectronics Workshop”, June 15
to16, P2 to 28, Honolulu, Hawaii, 2008.
(Financial
supported by NSC-96-2221-E-182-047)
43.
W. C. Li, S. Maikap, and J. R.
Yang, “Design
a new nonvolatile memory device using copper nanobridging in tantalum oxide
films”, Proceeding of the 28th
Symposium on Microscopy, M-P 14, Taichung, June 21, 2008.
44.
S. Z.
Rahaman, A. Das, and S. Maikap, “Nanoscale
(EOT= 5.6 nm) nonvolatile memory capacitors using atomic layer deposited
high k HfAlO nanocrystals”,
International Conference on Solid State Devices and Materials (SSDM), P 4
2, pp. 458 to 459, Tsukuba, Japan, 2008.
(Financial supported by
NSC-96-2221-E-182-047)
45.
Y. R.
Tsai, S. Maikap, D. Panda, S. Z. Rahaman, C. S. Lai, P. J. Tzeng, C. H.
Lin, T. C. Tien, D. Wu, C. C. Wang, M. J. Kao, and M. J. Tsai, “Resistive
switching memory using high
k
Ta2O5 films”,
International Conference on Solid
State Devices and Materials (SSDM),
C-8-2, pp. 906-907, Tsukuba, Japan, 2008.
46.
W.
Banerjee and S. Maikap, “Physical and electrical characteristics of atomic layer
deposited RuO2 nanocrystals for nanoscale nonvolatile memory
applications”, 9th
International Conference on Solid-State and Integrated-Circuit Technology
(ICSICT), D4-3, October 20-23, Beijing, China, 2008.
(Financial
supported by NSC-96-2221-E-182-047)
47.
S. Maikap,
S. Z. Rahaman, W. Banerjee, C.H. Lin, P. J. Tzeng, C. C. Wang, M. J. Kao, and M.
J. Tsai, “Enhanced Flash Memory Device Characteristics Using ALD TiN/Al2O3
Nanolaminate Charge Storage Layers”, 9th
International Conference on Solid-State and Integrated-Circuit Technology
(ICSICT), D4 to 5, October 20 to 23, Beijing, China, 2008.
(Financial
supported by NSC-96-2221-E-182-047)
48.
Atanu
Das, W. Banerjee, S. Z. Rahaman, S.
Maikap, and L. B. Chang, “ Memory characteristics of atomic layer deposited
HfO2 nanocrystal capacitors with IrOx metal gate”, S2-2,
p. 15, Extended Abstracts of International Workshop on Dielectric Thin Films
for Future ULSI Devices: Science and Technology, November 5 to 7, Tokyo,
Japan, 2008.
(Financial supported by
NSC-96-2221-E-182-047)
49.
Atanu
Das, S. Maikap, and L. B. Chang, “Nonvolatile
memory characteristics of ALD RuOx metal nanocrystals in the n Si/SiO2/HfO2/RuOX/Al2O3/IrOX
capacitors”,
International Electron Devices and Materials Symposia (IEDMS),
November 27 to 28, Taichung, Taiwan,
2008. (Financial supported by
NSC-96-2221-E-182-047)
50.
W. C.
Li, S. Maikap, and J. R. Yang,
“Characteristics of atomic layer deposited high
k
HfAlOx nanocrystals in n Si/SiO2/HfO2/HfAlOx/Al2O3/Pt
memory capacitors”,
International Electron Devices and Materials Symposia (IEDMS),
November 27 to 28, Taichung, Taiwan,
2008. (Financial supported by
NSC-97-2221-E-182-051-MY3)
51.
W.
Banerjee, S. Maikap, W. C. Lee, T. C.
Tien, and J. R. Yang, “Novel IrOx metal nanocrystal memory device
with IrOx metal gate”,
International Electron Devices and Materials Symposia (IEDMS),
November 27-28, Taichung, Taiwan,
2008. (Financial supported by
NSC-96-2221-E-182-047)
52.
S. Z.
Rahaman, S. Maikap,
H. C. Chiu, C. H. Lin, C. S. Lai, P.
J. Tzeng,
T. Y.
Wu, T. C. Tien, M. J. Kao,
and M. J. Tsai, “Novel resistive memory device using Cu/GeSe/W structure with
low current operation”,
International Electron Devices and Materials Symposia (IEDMS),
November 27-28, Taichung, Taiwan,
2008. (Financial supported by
NSC-97-2221-E-182-051-MY3)
53.
S. Maikap,
S. Z. Rahaman, W. Banerjee, A. Das, C. H. Lin, P. J. Tzeng, S. S. Tzeng, P. W.
Li, and M. J. Tsai, “Charge
storage characteristics of ALD high
k
HfO2/TiO2/HfO2 multilayer quantum well flash
memory devices for nanoscale NAND applications”,
International Electron Devices and Materials Symposia
(IEDMS), November 27 to 28,
Taichung, Taiwan, 2008. (Financial
supported by NSC-96-2221-E-182-047)
54.
S. Z.
Rahaman, S. Maikap,
C. H. Lin,
T. Y. Wu, Y. S. Chen,
P. J. Tzeng,
F. Chen,
C. S. Lai, M.J. Kao, and M.
J. Tsai, “Low current and voltage resistive switching memory device using novel
Cu/Ta2O5/W structure”,
International Symposium on VLSI
Technology, Systems, and Applications (VLSI TSA), Hsinchu, Taiwan, April: 27-29, pp. 33-34,
2009.
(Financial
supported by NSC-97-2221-E-182-051-MY3)
55.
Y. R.
Tsai, K. C. Liao, and S. Maikap,
“High
k
Ta2O5 film for resistive switching memory application”,
10th International Conference
on Ultimate Integration on Silicon, March 18-20, Aachen, Germany, pp. 229-232, 2009.
56.
S. Z.
Rahaman,
S. Maikap,
C. H. Lin,
T. Y.
Wu, Y. S. Chen, P. J. Tzeng,
F. Chen, H. C. Chiu, M. J.
Kao, and M. J. Tsai, “Low power operation of resistive switching memory device
using novel W/Ge0.4Se0.6/Cu/Al structure”,
IEEE International Memory Workshop (IMW),
Monterey, California, May 10-14, pp. 21-24, 2009.
(Financial
supported by NSC-97-2221-E-182-051-MY3)
57.
W. C.
Li, S. Maikap, and J. R. Yang, “High
k
HfAlOx single layer nanocrystal memory capacitors for nanoscale NAND
application”, 215th Electrochemical Soc. Meet., San Francisco, May
24-29, Abs. 764, 2009.
(Financial
supported by NSC-97-2221-E-182-051-MY3)
58.
S. Maikap,
W. Banerjee, W. C. Li, and J. R. Yang, “Memory characteristics of IrOx metal nanocrystals with IrOx
metal gate”,
215th Electrochemical
Soc. Meet., San
Francisco, May 24-29, Abs. 1192, 2009.
(Financial
supported by NSC-97-2221-E-182-051-MY3)
59.
Y. R.
Tsai, S. Z. Rahaman, and S. Maikap, “Cu
chain formation in Cu/Ta2O5/TiN resistive switching
memory”, 215th Electrochemical
Soc. Meet., San Francisco, May 24-29, Abs. 91, 2009.
60.
W. Banerjee, S. Maikap, W. C. Li,
T.C. Tien, and J. R. Yang, “IrOx
metal nanocrystal flash memory device with IrOx metal gate for NAND
application”, IEEE Silicon Nanoelectronics Workshop, Japan, pp. 27-28,
2009.
(Financial
supported by NSC-97-2221-E-182-051-MY3)
61.
Amit
Prakash, Anirban Das, S. Maikap, and
C. S. Lai, “pH sensor using protein mediated gold nanocrystal array”,
9th International Conference on
Nanotechnology (IEEE Nano), Genoa, July 26-30, Italy, pp. 1054-1057, 2009.
62.
S. Maikap,
W. Banerjee, Anirban Das, W. C. Li, and J. R. Yang, “Memory characteristics of
IrOx metal nanocrystals embedded in high
k
Al2O3 films with IrOx metal gate”,
The 9th International
Conference on Nanotechnology (IEEE Nano), Genoa, July 26-30, Italy, pp.
462-465, 2009.
(Financial supported by
NSC-97-2221-E-182-051-MY3)
63.
W.
Banerjee and S. Maikap, “High
k
Hf based nanocrystal memory capacitors with IrOx metal gate for NAND
application”, IEEE International Workshop
on Memory Technology, Design and Testing (MTDT), Hsinchu, Taiwan, Aug. 31 to
Sep. 2, pp. 31 to 33, 2009.
(Financial supported by
NSC-97-2221-E-182-051-MY3)
64.
S. Maikap,
S. Z. Rahaman, T. Y. Wu, F. Chen, M. J. Kao, and M. J. Tsai, “Low current (5 pA)
resistive switching memory using high-k Ta2O5 solid electrolyte”,
The 39th European Solid-State
Device Research Conference and the 35th European Solid-state Circuits
Conference (ESSDERC/ESSCIRC), Athens, Greece, September 14-18, pp. 217-220,
2009.
(Financial supported by
NSC-97-2221-E-182-051-MY3)
65.
S. Z.
Rahaman, S. Maikap, C. H. Lin, T. Y.
Wu, Y. S. Chen, P. J. Tzeng, F. Chen, M. J. Kao, and M. J. Tsai, “Formation free
resistive switching memory device using Ge0.4Se0.6 solid
electrolyte”,
International Conference on Solid State Devices and Materials (SSDM),
Miyagi, Japan, October 7-9, P-4-10, 2009.
(Financial
supported by NSC-97-2221-E-182-051-MY3)
66.
K C.
Liao, A. Prakash, and S. Maikap, “Low
power operation of resistive switching memory using novel IrOx/SrTiOx/W
structure”,
International Electron Devices and Materials Symposia
(IEDMS), November 19-20, Tao-Yuan, 2009.
67.
Anirban
Das, S. Maikap, and C. S. Lai, “pH
sensor using protein mediated CdSe/ZnS quantum dots”,
International Electron Devices and Materials Symposia (IEDMS),
November 19-20, Tao-Yuan, 2009.
68.
W.
Banerjee, S. Maikap, W. C. Li, T. C.
Tien, and J. R. Yang, “Double layers of IrOx metal nanocrystals for
nanoscale nonvolatile flash memory device applications”,
International Electron Devices and Materials Symposia (IEDMS),
November 19 to 20, Tao Yuan, 2009. (Financial
supported by NSC-97-2221-E-182-051-MY3)
69.
S. Z.
Rahaman, S. Maikap, M. J. Tsai, and
M. J. Kao,“Low current operation of resistive switching memory using Au/Cu/Ge0.2Se0.8/W
structure”,
International Electron Devices and Materials Symposia
(IEDMS), November 19-20, Tao-Yuan, 2009. (Financial
supported by NSC-97-2221-E-182-051-MY3)
70.
C. I.
Lin, A. Prakash and S. Maikap, “Novel
high
k
Ta2O5 resistive memory switching using IrOx
metal electrode”,
International Semiconductor Device Research
Symposium(ISDRS),
University of Maryland, MD, December 9-11, pp. 1-2,
2009. (Financial supported by
NSC-98-2221-E-182-052-MY3)
71.
Anirban
Das, A. Prakash and S. Maikap, “Protein
mediated gold nanocrystals for non-volatile memory applications”,
International Thin Films Conference (TACT),
Taipei, December 14-16, p. 197, 2009.
(Financial
supported by NSC-97-2221-E-182-051-MY3)
72.
S. Maikap,
C. I. Lin, S. Z. Rahaman and W. Banerjee, “High
k Ta2O5
thin films with IrOx metal electrode for resistive memory
applications”, International Thin Films
Conference (TACT), Taipei, December 14-16, p. 244, 2009.
(Financial supported by
NSC-98-2221-E-182-052-MY3)
73.
S. Maikap
and Atanu Das, “A fine nano
layer (nanocrystal) coating by atomic layer deposition”,
International Thin Films Conference (TACT), Taipei, December 14 to 16, p.
205, 2009.
(Financial
supported by NSC-97-2221-E-182-051-MY3)
74.
Anirban
Das, A. Prakash, S. Maikap, and C. S.
Lai, “Protein mediated gold nanocrystals for pH sensors”,
XVth International Workshop on Physics of Semiconductor
Devices (IWPSD), Delhi, December 15-19, 2009.
75.
W.
Banerjee, S. Maikap, W. C. Li, and J.
R. Yang, “Nanoscale nonvolatile memory characteristics of IrOx metal
nanocrystals with double layers”, XVth
International Workshop on Physics of Semiconductor Devices (IWPSD),
Delhi, December 15-19, 2009. (Financial
supported by NSC-97-2221-E-182-051-MY3)
76.
A.
Prakash and S. Maikap, “A novel
resistive switching memory using high
k
Ta2O5 films”, XVth International Workshop on Physics of Semiconductor
Devices (IWPSD), Delhi, December 15-19, 2009. (Financial
supported by NSC-98-2221-E-182-052-MY3)
77.
S. Z.
Rahaman, S. Maikap,
C. H.
Lin, P. J. Tzeng, H. Y. Lee, T. Y. Wu, Y. S. Chen, F. Chen, M. J. Kao, and M. J.
Tsai, “Low current bipolar resistive switching memory using Cu metallic filament in Ge0.2Se0.8 solid
electrolyte”,
International Symposium on VLSI Technology, Systems, and Applications
(VLSI TSA), Hsinchu,
Taiwan, pp. 134 to 135, 2010.
(Financial
supported by NSC-97-2221-E-182-051-MY3)
78.
K. C.
Liao, S. Z. Rahaman and S. Maikap,“Low
power bipolar resistive switching memory using Cu metallic filament in high
k
SrTiO3 solid electrolyte”, Material
Research Society (MRS), Spring Meeting, San Francisco, CA, April 5-9, 2010.
79.
S. Maikap
and S. Z. Rahaman, “1st International Workshop on Conductive Bridge
Memory”, April 23-24, Stanford University, p. 2, 2010.
(Financial
supported by NSC-97-2221-E-182-051-MY3)
80.
S. Z.
Rahaman and
S. Maikap, “Improved resistive switching memory characteristics using novel bi
layered Ge0.2Se0.8/Ta2O5 solid
electrolytes”, IEEE International Memory
Workshop (IMW), Seoul, South Korea, May 16-19, pp. 70-73, 2010.
(Financial supported by
NSC-97-2221-E-182-051-MY3)
81.
W.
Banerjee, A. Prakash, and S. Maikap, “Bipolar resistive switching memory
using novel IrOx/Al2O3/W structure”, IEEE
Silicon Nanoelectronics Workshop”, P2.21, Honolulu, Hawaii, 2010.
(Financial supported by
NSC-98-2221-E-182-052-MY3)
82.
A. Prakash
and S. Maikap, “Enhanced bipolar
resistive memory switching using novel W/Ta2O5/W
structure”, Advances in Nonvolatile Memory Materials and Devices, Kempinski
Hotel, July 11-16, Suzhou, China, p. 38, 2010 ((Financial
supported by NSC-98-2221-E-182-052-MY3)
83.
S.
Maikap,
S. Majumdar, W. Banerjee,
S. Mondal, S. Manna, and S. K. Ray,
“Ge nanowires for nanoscale nonvolatile memory applications”, International
Conference on Solid State Devices and Materials (SSDM), Tokyo, Japan, pp.
91-92, 2010. (Financial supported by
NSC-98-2923-E-182-001-MY3)
84.
W.
Banerjee and S. Maikap, “Nanoscale flash and resistive switching memories using
IrOx nanocrystals”, 10th
IEEE International Conference
on Solid State and Integrated Circuit Technology (ICSICT), accepted,
Shanghai, China, Nov. 1 to 4, 2010.
(Financial
supported by NSC-97-2221-E-182-051-MY3)
85.
A.
Prakash, S. Maikap, H. Y. Lee, G.
Chen, F. Chen, M. j. Tsai and M. J. Kao, “Improved bipolar resistive switching
memory using W.TaOx/W structure”,
International Conference on Micro Nano Devices, Structures and Computing Systems
(MNSDCS), November 6 to7, Singapore, 2010. (Financial
supported by NSC-98-2221-E-182-052-MY3)
86.
W.
Banerjee, S. Maikap, W. C. Li and J. R. Yang, “Temperature dependence IrOx
metal nanocrystal capacitors for high performance nanoscale nonvolatile flash
memory device applications”,
International Electron Devices and Materials Symposia (IEDMS),
November 18 to 19, Chungli,
P-D-26,
2010. (Financial supported by
NSC-97-2221-E-182-051-MY3)
87.
S. Z.
Rahaman and S. Maikap,“High performance CBRAM devices using thermally deposited
Ge0.5Se0.5 film”,
International Electron Devices and Materials Symposia (IEDMS),
November 18 to 19, Chungli, B3-9,
2010. (Financial supported by
NSC-97-2221-E-182-051-MY3)
88.
S. Maikap
and W. Banerjee,“Nanoscale flash memory devices using ALD high k HfO2:Al2O3
film”,
International Electron Devices and Materials Symposia (IEDMS),
November 18 to 19, Chungli,
P-D-27,
2010. (Financial
supported by NSC-97-2221-E-182-051-MY3)
89.
A.
Prakash, S. Maikap, H. Y. Lee, G. Chen, F. Chen, M. J. Kao, and M. J. Tsai,
“Low power bipolar resistive switching memory using novel W/Ta2O5/W
structure”,
International Electron Devices and Materials Symposia (IEDMS),
November 18 to 19, Chungli, B3 to 6,
2010. (Financial supported by
NSC-98-2221-E-182-052-MY3)
90.
K. C.
Liao and S. Maikap, “Physical and electrical characteristics of IrOx/SrTiO3/W
resistive switching memory devices”,
International Electron Devices and Materials Symposia (IEDMS),
November 18 to 19, Chungli, D5-1,
2010. (Financial supported by
NSC-98-2221-E-182-052-MY3)
91.
W.
Banerjee and S. Maikap, “ High
k
Al2O3/WOx charge trapping flash and resistive
switching memories”, International Workshop on Dielectric Thin Films for Future Electron
Devices: Science and Technology (IWDTF 11) , January 20 to 21, Tokyo, Japan,
pp. 115 to 116, 2011.
(Financial
supported by NSC-97-2221-E-182-051-MY3)
92.
A.
Prakash, S. Maikap, G. Chen, F. Chen,
M. J. Kao and M. J. Tsai, “Improvement of high
k
Ta2O5 based resistive switching memory using Ti
interfacial layer”,
International Symposium on VLSI
Technology, Systems, and Applications (VLSI TSA),
Hsinchu, Taiwan, pp. 66 to 67, 2011.
(Financial
supported by NSC-98-2221-E-182-052-MY3)
93.
W.
Banerjee and S. Maikap, “IrOx nanodots in Al2O3
films for nanoscale resistive switching memory applications”,
IEEE International Nano Electronics
Conference (IEEE INEC), June 21 to 24, p. 37, 2011(Financial supported by
NSC-97-2221-E-182-051-MY3)
94.
A.
Prakash, C. I. Lin, S. Maikap, C. S.
Lai, G. S. Chen, F. Chen, M.J. Kao, and M.J. Tsai,
“Resistive switching memory using bilayer TaOx/WOx Films”,
IEEE International Nano Electronics
Conference (IEEE INEC), June 21 to 24, p. 37, 2011(Financial supported by
NSC-98-2221-E-182-052-MY3)
95.
D.
Jana, W. Banerjee, A. Prakash, S. Z. Rahaman and
S.
Maikap, “ReRAM
device using IrOx/Gd2O3/W structure”,
IEEE International Nano Electronics
Conference (IEEE INEC), June 21 to 24, p. 38, 2011(Financial
supported by NSC-98-2221-E-182-052-MY3)
96.
S. Z.
Rahaman, A. Sahoo, S. Maikap, H. Y.
Lee, G. S. Chen, F. T. Chen, M. J. Kao, and M. J. Tsai, “Improved resistive
switching memory using Cu filament in
bilayer TiOx/TaOx solid electrolytes”,
IEEE International Nano Electronics
Conference (IEEE INEC),
June 21 to 24, p. 27, 2011(Financial
supported by NSC-98-2221-E-182-052-MY3)
97.
S. Maikap,
W. Banerjee, S. Manna, and S. K. Ray, “Growth of Ge nanowires for nanoscale memory
applications”,
International
Conference on Materials for Advanced Technologies
(ICMAT),
Singapore, June 26 to July 1, p.91, 2011(Financial
supported by NSC-98-2923-E-182-001-MY3)
98.
W.
Banerjee and
S. Maikap, W. Banerjee, S. Manna, and S. K. Ray, “Nanoscale
nonvolatile memory characteristics using IrOx nanodots
”,
International Conference on
Materials for Advanced Technologies
(ICMAT), Singapore, June 26 to July 1, p. 122, 2011(Financial
supported by NSC-97-2221-E-182-051-MY3)
99.
A. Prakash,
S. Maikap, C. S. Lai, H. Y. Lee, W.
S. Chen,
F. T. Chen, M. J. Kao, and M. J. Tsai,“Improvement
in resistive switching parameters by selecting the SET
polarity in IrOx/TaOx/WOx/W structure”,
International Conference on Solid State Devices and
Materials (SSDM), Nagoya, Japan, pp.
999-1000, 2011. (Financial supported by
NSC-98-2221-E-182-052-MY3)
100.
A. K. Sahoo, S. Z. Rahaman,
S. Maikap, H. Y. Lee, W. S. Chen, F.
T. Chen, M.J. Kao, and M. J. Tsai, “Effects of Ti interfacial layer on resistive
switching memory performance using Cu filament in high
k
Ta2O5 solid electrolyte”,
International Conference on Solid State Devices and Materials
(SSDM),
Nagoya, Japan, pp. 1023-1024, 2011. (Financial
supported by NSC-98-2221-E-182-052-MY3)
101.
W.
Banerjee, S. Z. Rahaman and S. Maikap,
”Formation free low power
resistive switching memory using IrOx/AlOx/W crosspoint
with excellent uniformity and multi level operation”,
International
Conference on Solid State Devices and Materials (SSDM),
Nagoya, Japan, pp. 1017-1018, 2011. (Financial
supported by NSC-97-2221-E-182-051-MY3)
102.
S. Z.
Rahaman, S. Maikap, S. K. Ray, H. Y.
Lee, G. S. Chen,
F. T. Chen, M. J. Kao,
and M.J. Tsai, “Record resistance ratio and bipolar/unipolar resistive switching scenario
using novel Cu/GeOx/W memory device”,
International Conference
on Solid State Devices and Materials (SSDM), Nagoya, Japan, pp. 1021-1022, 2011. (Financial supported by
NSC-98-2923-E-182-001-MY3)
103.
D. Jana,
S. Maikap, T. C. Tien, H. Y. Lee, W.
S. Chen, F. T. Chen, M. J. Kao, and M. J. Tsai,
“SET
polarity dependent resistive switching memory characteristics using IrOx/GdOx/WOx/W
structure”,
International Conference on Solid State Devices and Materials (SSDM),
Nagoya, Japan, pp. 158-159, 2011. (Financial
supported by NSC-98-2221-E-182-052-MY3)
104.
S. Z. Rahaman,
S. Maikap, T. C. Tien, W. S. Chen, F. T. Chen, M. J. Tsai
and M. J. Kao, “High performance resistive switching memory using GeOx:WOx
nanoscale mixture”,
International Electron Devices and Materials Symposia (IEDMS),
November 17 to 18, Taipei, P D 32,
2011. (Financial supported by
NSC-98-2221-E-182-052-MY3)
105.
W.
Banerjee, S. Z. Rahaman, A. Prakash and
S. Maikap, “Novel resistive switching memory devices using core shell IrOx
nanodots in cross point structure”,
International Electron Devices and Materials Symposia (IEDMS),
November 17 to 18, Taipei, P D 31,
2011. (Financial supported by
NSC-97-2221-E-182-051-MY3)
106.
“Excellent poster award”
Y. Y. Chen, W. Banerjee, S. Maikap,
and J. R. Yang, “The microstructure investigation of HfO2 thin film
after post annealing”, , IUMRS ICA (12th International conference in
Asia), 19 to
22 September, 2011.
(Financial supported by
NSC-97-2221-E-182-051-MY3)
107.
W.
Banerjee and S. Maikap, “Improvement
of resistive switching memory parameters using IrOx nanodots in high
κ AlOx cross point”.
International Symposium on VLSI Technology, Systems, and Applications (VLSI TSA),
Hsinchu, Taiwan, accepted, 2012. (Financial
supported by NSC-97-2221-E-182-051-MY3)
108.
S.
Z.
Rahaman, S. Maikap, W. S.
Chen, T. C. Tien, H. Y. Lee, F. T. Chen, M. J. Kao, and M. J. Tsai, “Excellent
Resistive Switching Memory: Influence of GeOx in WOx
Mixture”,
International Symposium on VLSI
Technology, Systems, and Applications (VLSI TSA),
Hsinchu, Taiwan, accepted, 2012. (Financial
supported by NSC-98-2923-E-182-001-MY3)
109.
P. Kumar, A. Prakash, and
S. Maikap, “pH
sensor using CdSe/ZnS quantum dots”, 221st
Electrochemical Soc.(ECS) Meet.,
Seattle, Washington, May 6 to 10, Abs. J2-1634, 2012.
110.
S. Z.
Rahaman, S. Maikap, H. Y. Lee, W. S.
Chen, F. Chen, M. J. Kao, and M. J. Tsai
, “Repeatable bipolar
resistive switching with both polarity dependent SET/RESET scenario using
Al/Cu/Ge0.2Se0.8/W Structure ”,
221st
Electrochemical Soc. Meet., Seattle, Washington, May 6 to 10, Abs. G4-1038,
2012. (Financial supported by
NSC-97-2221-E-182-051-MY3)
111.
W.
Banerjee, S. Maikap, D. Jana, Y. Y.
Chen, and J. R. Yang, “Unipolar resistive
switching memory using IrOx/Al2O3/SiO2/p
Si MIS structure”, 221st
Electrochemical Soc.(ECS) Meet., Seattle, Washington, May 6 to 10,
Abs. E1-732, 2012. (Financial supported by
NSC-97-2221-E-182-051-MY3)
112.
D.
Jana, A. Prakash, W. Banerjee, and S. Maikap,
“Forming free resistive
switching memory using IrOx/GdOx/W crossbar structure”,
221st
Electrochemical Soc.(ECS) Meet., Seattle, Washington, May 6 to 10, Abs.
E1-0734, 2012. (Financial supported by
NSC-98-2221-E-182-052-MY3)
113.
A.
Prakash, S. Maikap, W. S. Chen, H. Y.
Lee, F. Chen, M. J. Kao, and M. J. Tsai,
“Impact of high κ TaOx
thickness on the resistive memory properties in IrOx/TaOx/WOx/W
structure”, 221st
Electrochemical Soc.(ECS) Meet., Seattle, Washington, May 6 to 10,
Abs. E1-0724, 2012. (Financial supported by
NSC-98-2221-E-182-052-MY3)
114.
S. Maikap
and S. Z. Rahaman,
“Bipolar resistive switching
characteristics using Al/Cu/GeOx/W memristors”,
221st
Electrochemical Soc.(ECS) Meet., Seattle, Washington, May 6 to 10,
Abs. E5-0889, 2012. (Financial supported by
NSC-97-2221-E-182-051-MY3)
115.
S.
Maikap
and S. Z. Rahaman, “Bipolar resistive switching memory characteristics using Al/Cu/GeOx/W
memristor”,
ECS Transactions,
vol. 45, 2012.
(Financial supported by
NSC-98-2923-E-182-001-MY3)
116.
D.
Jana, A. Prakash,
and S. Maikap, “Forming free
resistive switching memory characteristics
using IrOx/GdOx/W crossbar structure”,
ECS Transactions, vol. 45, 2012. (Financial
supported by NSC-98-2221-E-182-052-MY3)
117.
W. Banerjee,
S. Maikap, Y. Y. Chen,
and J.
R. Yang, “Unipolar
resistive switching memory characteristics using IrOx/Al2O3/SiO2/p
Si MIS structure”,
ECS Transactions,
vol. 45, 2012. (Financial supported by
NSC-97-2221-E-182-051-MY3)
118.
A. Prakash,
S. Maikap, W. S. Chen, H. Y. Lee, F. T. Chen, M. J. Kao, and M. J.
Tsai, “Impact of high κ TaOx thickness on the
switching mechanism of resistive
memory device using
IrOx/TaOx/WOx/W structure”,
ECS Transactions,
vol. 45, 2012. (Financial supported by
NSC-98-2221-E-182-052-MY3)
Important
Conference Papers:
1.
M. H. Lee,
P. S.
Chen, W. C. Hua, C. Y. Yu, Y. T. Tseng,
S. Maikap, Y. M. Hsu, C. W. Liu, S. C. Lu, W. Y. Hsieh, and M. J. Tsai,
“Comprehensive low frequency and RF noise characteristics in strained Si
NMOSFETs”,
IEDM (International Electron Devices
Meeting) Tech. Dig.,
Washington, D.C., pp. 69-72, 2003.
2.
S. Maikap, M. H. Liao, F. Yuan, M. H. Lee, C. F.
Huang, S. T. Chang and C. W. Liu, “Packagestrain enhanced device and circuit
performance”,
IEDM (International Electron Devices
Meeting) Tech. Dig.,
San Francisco, CA, pp. 233-236, 2004.
Patent:
1.
C. H. Lin, P. J. Tzeng, and S. Maikap, “Method
of fabricating metal compound dots dielectric piece”, Pub. No. US 2008/0095931
A1, April 24, 2008.
Invited Talks:
1.
S. Maikap,
“Memory Technologies”,
November 19, 2007, Department of Materials Science Engineering, National Taiwan
University, Taiwan
2.
S. Maikap,
“Atomic Layer Deposited
High
k and Metal
Nanocrystals for Nanoscale Nonvolatile Memory Applications”, October 15, 2008,
Department of Physics and Meteorology, Indian Institute of Technology,
Kharagpur, India.
3.
S. Maikap,
“Atomic Layer Deposited High
k
Multilayer Quantum Wells for Nanoscale Nonvolatile Memory Applications”,
November 20, 2008,
Institute of Electro Optical Science and Technology, National Taiwan Normal
University, Taiwan.
4.
S. Maikap, “Quantum dot based memories”, International Workshop on Emerging
Non-volatile Memories, July 31st, 2009, INFM/CNR, Genova, Italy.
5.
S. Maikap
and S. Z. Rahaman, “Bipolar resistive switching memory using Cu filament
in Ge1-xSex solid electrolytes”, 1st
International Workshop on Conductive Bridge Memory (CBRAM), April 23rd
-24th, 2010, Stanford University, California.
6.
S. Maikap
and S. Z. Rahaman, “ Germanium based resistive
switching memories”, Symposium on Nano Device Technology (SNDT)”, April 21-22, p. 19, 2011,
Hsinchu, Taiwan.
7.
S. Maikap, “ReRAM
and CBRAM devices using AlOx and Ge based materials”,
1st International Workshop on
Resistive RAM”, October 20th and 21st, 2011, IMEC,
Leuven, Belgium.
8.
S. Maikap,
W. Banerjee, and S. Z. Rahaman, “Atomic layer deposited nanoscale high κ/metal
multilayers for CMOS and memory applications”,
The 6th
DAE BRNS National Symposium on Pulsed Laser Deposition of Thin Films and
Nanostructured Materials (PLD-2011),
November 9-11, 2011,
Bangaluru, India.
9.
S. Maikap,
S. Z. Rahaman, W. Banerjee, and A. Prakash, “Germanium
based materials for low power nanoscale resistive switching memory
applications”, XVIth
International Workshop on Physics of Semiconductor Devices (IWPSD), December
19-22, 2011, IIT Kanpur, India.
10.
S. Maikap
and S. Z.
Rahaman “Ge
based resistive switching memories”, February 1, 2012, Department of Physics and
Meteorology, Indian Institute of Technology, Kharagpur, India.
Book Chapter:
1.
S. K. Ray, R. Mahapatra, G. S. Kar, and S. Maikap,
“Research Signpost”, Applied Physics in the 21st Century”,
Dilute carbon alloy group IV semiconductor heterostructures for advanced
MOSFET devices,
ISBN: 978-81-308-0238-1,
pp.
315-370, 2008.
Awards:
1.
“Excellent Research and Innovation Award” S. Maikap,
In
recognition of participation in Project
“SiGe Buffer Free Compressively Strained Ge PFET on Si with Si Epi
Passivation” Electronics
Research & Service Organization (ERSO), Industrial Technology Research
Institute (ITRI),
Hsinchu, Taiwan, 28th June, 2005.
2.
“Excellent paper award” S. Maikap,
P. J. Tzeng, S. S. Tseng, C. H. Lin, H. Y. Lee, C. C.
Wang, L. S. Lee, T. C. Tien, S. C. Lo,
P. W. Li, M. J. Tsai, “High density and uniform ALD
TiN nanocrystal flash memory devices
with large memory window and good retention”, Int.
Electron Devices and Materials Symposia (IEDMS), pp. 85-86, Tainan,
Taiwan, 2006.
3.
“Excellent poster award”
Yi-Yan Chen, Writam Banerjee, S. Maikap,
and Jer-Ren Yang, “The microstructure investigation of HfO2 thin film after
post-annealing”, , IUMRS-ICA (12th International conference in Asia),
19 to
22 September, 2011.
(Financial supported by
NSC-97-2221-E-182-051-MY3)