[1]  C. L. Tsai,* Y. C. Lu, C. M. Yu, and Y. J. Chen, “Epitaxial growth of InGaN multiple-quantum-well LEDs with improved characteristics and their application in underwater optical wireless communications,” IEEE Trans. Electron Devices, vol. 65, no. 10, pp. 4346-4352 (2018), SCI (IF: 2.62, rank: 86/260 in ENGINEERING, ELECTRICAL & ELECTRONIC).

[2]  C. L. Tsai,* Y. C. Lu, and S. H. Chang, “Enhancement of photocurrent extraction and electron injection in dual-functional CH3NH3PbBr3 perovskite-based optoelectronic devices via interfacial engineering,” Nanotechnology, vol. 29, pp. 275704-1~9 (2018), SCI (IF: 3.404, rank: 28/146 in PHYSICS, APPLIED).

[3]  C. L. Tsai,* Y. C. Li, Y. C. Lu, and S. H. Chang, “Fabrication and characterization of Si substrate-free InGaN light-emitting diodes and their application in visible light communications,” IEEE Photon. J., vol. 9, no. 2, pp. 8200612-1~12 (2017), SCI (IF: 2.627, rank: 85/260 in ENGINEERING, ELECTRICAL & ELECTRONIC).

[4]  C. C. Chen, S. H. Chang, L. C. Chen, C. L. Tsai, H. M. Cheng, W. C. Huang, W. N. Chen, Y. C. Lu, Z. L. Tseng, K. Y. Chiu, S. H. Chen, and C. G. Wu, “Interplay between nucleation and crystal growth during the formation of CH3NH3PbI3 thin films and their application in solar cells,” Solar Energy Materials and Solar Cells, vol. 159, pp. 583-589 (2017), SCI (IF: 5.018, rank: 17/97 in ENERGY & FUELS).

[5]  C. L. Tsai,* Y. C. Lu, and S. C. Ko, “Resonant-cavity light-emitting diodes (RCLEDs) made from a simple dielectric coating of transistor outline (TO)-can packaged InGaN LEDs for visible light communications,” IEEE Trans. Electron Devices, vol. 63, no. 7, pp. 2802-286 (2016), SCI (IF: 2.62, rank: 86/260 in ENGINEERING, ELECTRICAL & ELECTRONIC).

[6]  C. L. Tsai,* “Effects of underlying InGaN/GaN superlattice structures on the structural and optical properties of InGaN LEDs,” J. Lumin., vol. 174, pp. 36-41 (2016), SCI (IF: 2.732, rank: 25/94 in OPTICS).

[7]  C. L. Tsai,* and Y. J. Chen, “Real-time optical wireless transmissions of digital TV signals using white InGaN LEDs grown with an asymmetric quantum barrier,” Opt. Express, vol. 23, no. 21, pp. 28059-28066 (2015), SCI (IF: 3.356, rank: 19/94 in OPTICS).

[8]  S. H. Chang, K. F. Lin, K. Y. Chiu, C. L. Tsai, H. M. Cheng, S. C. Yeh, W. T. Wu, W. N. Chen, C. T. Chen, S. H. Chen, and C. G. Wu, “Improving the efficiency of CH3NH3PbI3 based photovoltaics by tuning the work function of the PEDOT:PSS hole transport layer,” Solar Energy, vol. 122, pp. 892-899 (2015), SCI (IF: 4.374, rank: 23/97 in ENERGY & FUELS).

[9]  C. L. Tsai,* and C. T. Yen, “SU-8 planarized InGaN light-emitting diodes with multipixel emission geometry for visible light communications,” IEEE Photon. J., vol. 7, no. 1, pp. 1600109-1~9 (2015), SCI (IF: 2.627, rank: 85/260 in ENGINEERING, ELECTRICAL & ELECTRONIC).

[10] C. L. Tsai,* and W. C. Wu, “Effects of asymmetric quantum wells on the structural and optical properties of InGaN-based light-emitting diodes,” Materials, vol. 7, pp. 3758–3771 (2014), SCI (IF: 2.467, rank: 111/285 in MATERIALS SCIENCE, MULTIDISCIPLINARY).

[11] H. J. Chang, T. H. Huang, C. L. Tsai, C. L. Ho, and M. C. Wu “High-speed and high-light output power of InGaAs/GaAs HBLETs with an InMoOx contact,” IEEE Photon. Technol. Lett., vol. 26, no. 16, pp. 1649-1652 (2014), SCI (IF: 2.446, rank: 96/260 in ENGINEERING, ELECTRICAL & ELECTRONIC).

[12] C. L. Tsai,* and Z. F. Xu, “Line-of-sight visible light communications with InGaN-based resonant cavity LEDs,” IEEE Photon. Technol. Lett., vol. 25, no. 18, pp. 1793-1796 (2013), SCI (IF: 2.446, rank: 96/260 in ENGINEERING, ELECTRICAL & ELECTRONIC).

[13] C. L. Tsai,* K. M. Huang, and M. J. Jeng, “Electrodeposition of CuIn1−xGaxSe2 solar cells with a periodically-textured surface for efficient light collection,” Materials Science in Semiconductor Processing, vol. 16, pp. 1599-1602 (2013), SCI (IF: 2.593, rank: 92/260 in ENGINEERING, ELECTRICAL & ELECTRONIC).

[14] C. L. Tsai,* C. T. Yen, W. J. Huang, Z. F. Xu, and S. C. Ko, “InGaN-based resonant-cavity light-emitting diodes fabricated with a Ta2O5/SiO2 distributed Bragg reflector and metal reflector for visible light communications,” J. Display Technol., vol. 9, no. 5, pp. 365-370 (2013), SCI (IF: 1.530, rank: 148/260 in ENGINEERING, ELECTRICAL & ELECTRONIC).

[15] C. L. Tsai,* Z. F. Xu, W. J. Huang, and C. T. Yen, “Effects of an asymmetric barrier layer on the structural and optical properties of InGaN LEDs,” J. Electrochemical Society, vol. 159, pp. H473-H477 (2012), SCI (IF: 3.662, rank: 2/19 in MATERIALS SCIENCE, COATINGS & FILMS).

[16] C. L. Tsai,* C. T. Yen, C. Y. Chou, S. J. Chang, M. C. Wu, “1.3-μm InGaAsP planar buried heterostructure laser diodes with AlInAs electron stopper layer,” Optics and Laser Technology, vol. 44, pp.1026-1030 (2012), SCI (IF: 2.503, rank: 31/94 in OPTICS).

[17] C. L. Tsai,* G. C. Fan, and Y. S. Lee, “Effects of InGaN/GaN superlattice absorption layers on the structural and optical properties of InGaN solar cells,” J. Vac. Sci. Technol. B, vol. 29, pp. 021201-1~5 (2011), SCI (IF: 1.314, rank: 176/260 in ENGINEERING, ELECTRICAL & ELECTRONIC).

[18] C. L. Tsai,* G. C. Fan, and Y. S. Lee, “Effects of strain-compensated AlGaN/InGaN superlattice barriers on the optical properties of InGaN light-emitting diodes,” Appl. Phys. A, vol. 104, pp. 319-323 (2011), SCI (IF: 1.604, rank: 83/146 in PHYSICS, APPLIED).

[19] Y. L. Chou, R. M. Lin, M. H. Tung, C. L. Tsai, J. C. Li, and M. C. Wu, “Improvement of surface emission for GaN-based light-emitting diodes with a metal-via-hole structure embedded in a reflector,” IEEE Photon. Technol. Lett., vol. 23, pp. 393-395 (2011), SCI (IF: 2.446, rank: 96/260 in ENGINEERING, ELECTRICAL & ELECTRONIC).

[20] B. R. Huang, C. H. Chou, W. C. Ke, Y. L. Chou, C. L. Tsai, and M. C. Wu, “Effects of hydrogen treatment on ohmic contacts to p-type GaN films,” Applied Surface Science, vol. 257, pp. 7490-7493 (2011), SCI (IF: 4.439, rank: 1/19 in MATERIALS SCIENCE, COATINGS & FILMS).

[21] C. L. Tsai,* G. S. Liu, G. C. Fan, and Y. S. Lee, “Substrate-free large gap InGaN solar cells with bottom reflector,” Solid-State Electron., vol. 54, pp. 541-544 (2010), SCI (IF: 1.666, rank: 141/260 in ENGINEERING, ELECTRICAL & ELECTRONIC).

[22] C. L. Tsai,* G. S. Liu, Y. S. Lee, and G. C. Fan, “Enhanced luminescence of InGaN light-emitting diodes with strain-compensated superlattice barriers,” J. Electrochemical Society, vol. 157, pp. H260-H263 (2010), SCI (IF: 3.662, rank: 2/19 in MATERIALS SCIENCE, COATINGS & FILMS).

[23] Y. S. Wang, S. J. Chang, C. L. Tsai, M. C. Wu, Y. Z. Chiou, S. P. Chang, and W. Line, “10-Gb/s planar InGaAs P-I-N photodetectors,” IEEE Sensors Journal, vol. 10, pp. 1559-1563 (2010), SCI (IF: 2.617, rank: 88/260 in ENGINEERING, ELECTRICAL & ELECTRONIC).

 

Conference & proceeding papers:

[1]  C. L. Tsai, Y. C. Lu, C. Y. Yu, and Y. C. Tu, “Development of light-emitting diode array-based optical communications,” Progress in Electromagnetics Research Symposium (PIERS), Toyama, Japan, August 2018.

[2]  C. L. Tsai, Y. C. Lu, C. Y. Yu, and Y. C. Tu, “Fabrication and characterization of the substrateless GaN-on-Si LEDs with a metal can package,” 33rd European Conference on Surface Science, Szeged, Hungary, August 2017.

[3]  C. L. Tsai, C. C. Liao, and Y. C. Lu, “A simple method to fabricate a near-UV resonant-cavity light-emitting diode (RCLED) through the dielectric coatings of a transistor outline-can (TO-Can) packaged InGaN LED,” The 7th International Conference on Optical, Optoelectronic and Photonic Materials and Applications, Montreal, Canada, June 2016.

[4]  C. L. Tsai, Y. S. Yen, S. Y. Chou, S. C. Lu, and W. C. Wu, “InGaN LEDs grown with underlying In0.1Ga0.9N/GaN superlattices as an electron emitter layer,” The 15th Conference of the International Association of Colloid and Interface Scientists, Mainz, Germany, May 2015.

[5]  W. C. Wu, Y. J. Chen, C. T. Yen, C. L. Chang, W. J. Huang, and C. L. Tsai, “SU-8 planarized InGaN light-emitting diode with the multipixel emission geometry,” The 3rd International Symposium on Next-Generation Electronics, Taoyuan, Taiwan, May 2014.

[6]  C. L. Tsai, W. J. Huang, W. C. Wu, C. T. Yen, and C. L. Chang, “InGaN light-emitting diodes with an asymmetric multiple quantum well,” The 17th International Conference on Crystal Growth and Epitaxy (ICCGE-17), Warsaw, Poland, August 2013. 

[7]  S. C. Ko, C. L. Tsai, and Z. F. Xu, “Resonant-cavity LEDs use in light communication,” International Electron Devices & Material Symposia, Kaohsiung, Taiwan, November 2012.

[8]  C. L. Tsai, W. J. Huang, C. T. Yen, C. C. Lin, C. Y Chou, and Z. F. Xu, “InGaN light-emitting diodes with a reduced barrier thickness,” The 24th Conference of the EPS Condensed Matter Division (CMD-24), Edinburgh, UK, September 2012.

[9]  K. M. Huang, C. L. Tsai, C. Y Chou, W. J. Huang, and M. C. Wu, “Electrodeposition of CuIn1-xGaxSe2 solar cells on a transparent conducting back contact,” IEEE Asia-Pacific Power and Energy Engineering Conference (APPEEC), Shanghai, China, March 2012.

[10] C. L. Tsai, C. Y. Chou, and Z. F. Xu, “Fabrication and characterization of oxide-confined 850-nm VCSELs for biosensing applications,” International Photonics Conference Photonics, Tainan, Taiwan, December 2011.

[11] S. C. Ko, Y. S. Lee, and C. L. Tsai, “Effect of DBR mirror pairs in resonant-cavity LED,” International Electron Devices & Material Symposia, Taipei, Taiwan, November 2011.

[12] C. L. Tsai, Z. F. Xu, Y. S. Lee, and G. C. Fan, “Realization of InGaN solar cells with InGaN/GaN superlattice absorption layers by metalorganic vapor phase epitaxy (MOVPE),” The 4th IEEE International NanoElectornic Conference, Taoyuan, Taiwan, 2011.

[13] C. L. Tsai, and Z. F. Xu, “Fabrication and characterization of 1.3 μm strain-compensated InGaAsP buried heterostructure laser diodes with AlInAs electron blocking layer,” The 13th International Conference on Formation of Semiconductor Interfaces, Prague, Czech Republic, 2011.

[14] C. L. Tsai, G. S. Liu, Y. S. Lee, and G. C. Fan, “InGaN multiple quantum wells with strain-compensated Al0.03Ga0.97N-In0.01Ga0.99N superlattice barrier,” The 37th International Symposium on Compound Semiconductors, Kagawa, Japan, June 2010.

 

Other:

[1]  C. L. Tsai, Y. Z. Chiou, and M. C. Wu, “The characteristics and development of InGaN solar cell,” 電信研究雙月刊, vol. 30, pp. 465-474 (2009).