1.Jer Chyi Wang, Chyuan Haur Kao, Chien Hung Wu, Chun Fu Lin, and Chih Ju Lin, “Nb2O5 and Ti-doped Nb2O5 Charge Trapping Nano-Layers Applied in Flash Memory,” Nanomaterials, vol. 8, no. 10, p. 799, 8 Oct. 2018. (SCI/EI)

2.Bo Liu, Zhiwei Liu, In-Shiang Chiu, MengFu Di, YongRen Wu, Jer-Chyi Wang, Tuo-Hung Hou, and Chao-Sung Lai, “Programmable Synaptic Metaplasticity and below Femtojoule Spiking Energy Realized in Graphene-Based Neuromorphic Memristor,” ACS Applied Materials & Interfaces, vol. 10, no. 24, pp. 20237–20243, 6 Jun. 2018. (SCI/EI)

3.Ming Ling Lee, Jer Chyi Wang, Chyuan Haur Kao, Hsiang Chen, Chan Yu Lin, Che Wei Chang, Rama Krushna Mahanty, Chun Fu Lin, and Kow Ming Chang, “Comparison of ZnO and Ti-doped ZnO sensing membrane applied in electrolyte-insulator-semiconductor structure,” Ceramics International, vol. 44, no. 6, pp. 6081–6088, 15 Apr. 2018. (SCI/EI)

4.Yu-Hua Liu, Chyuan-Haur Kao, Tsung-Chin Cheng, Chih-I Wu, and Jer-Chyi Wang*, “Data Retention Characterization of Gate-Injected Gold-Nanoparticle Non-Volatile Memory with Low-Damage CF4-Plasma-Treated Blocking Oxide Layer,” Nanomaterials, vol. 7, no. 11, p. 385, 10 Nov. 2017. (SCI/EI)

5.Jer-Chyi Wang*, Ya-Ting Chan, Wei-Fan Chen,  Ming-Chung Wu, and Chao-Sung Lai, “Interface Modification of Bernal- and Rhombohedral-Stacked Trilayer-Graphene/Metal Electrode on Resistive Switching of Silver Electrochemical Metallization Cells,” ACS Applied Materials & Interfaces, vol. 9, no. 42, pp. 37031–37040, 25 Oct. 2017. (SCI/EI)

6.Rajat Subhra Karmakar, Yu-Jen Lu, Yi Fu, Kuo-Chen Wei, Shun-Hsiang Chan, Ming-Chung Wu, Jyh-Wei Lee, Tzu-Kang Lin, and Jer-Chyi Wang*, “Cross-Talk Immunity of PEDOT:PSS Pressure Sensing Arrays with Gold Nanoparticle Incorporation,” Scientific Reports, vol. 7, p. 12252, 25 Sept. 2017. (SCI/EI)

7.Ya-Ting Chan, Wei-Fan Chen, Jer-Chyi Wang*, and Chao-Sung Lai, “Effects of bottom electrode on resistive switching of silver programmable metallization cells with GdxOy/AlxOy solid electrolytes,” Vacuum, vol. 140, pp. 30–34, June 2017. (SCI/EI)

8.Jer-Chyi Wang, Kai-Ping Chang, Chih-Ting Lin, Ching-Yuan Su, Fethullah Güneş, Mohamed Boutchich, Chang-Hsiao Chen, Ching-Hsiang Chen, Ching-Shiun Chen, Lain-Jong Li*, and Chao-Sung Lai*, “Integration of ammonia-plasma-functionalized graphene nanodiscs as charge trapping centers for nonvolatile memory applications,” Carbon, vol. 113, pp. 318−324, Mar. 2017. (SCI/EI)

9.Jer-Chyi Wang*, Rajat Subhra Karmakar, Yu-Jen Lu, Ming-Chung Wu, and Kuo-Chen Wei, “Nitrogen Plasma Surface Modification of Poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate) Films to Enhance the Piezoresistive Pressure-Sensing Properties,” Journal of Physical Chemistry C, vol. 120, no. 45, pp. 25977−25984, 17 Nov. 2016. (SCI/EI)

10.Jer-Chyi Wang*, Kai-Ping Chang, Chin-Hsiang Liao, Ruey-Dar Chang, Chao-Sung Lai, and Li-Chun Chang, “Low-damage NH3 plasma treatment on SiO2 tunneling oxide of chemically-synthesized gold nanoparticle nonvolatile memory,” Current Applied Physics, vol. 16, no. 5, pp. 605–610, May 2016. (SCI/EI)

11.Chang Ren, Chia-Ming Yang, Chengang Lyu, Chin-Yuan Hsu, Tsung-Cheng Chen, Hau-Cheng Wang, Hao Yang, Wei-Tse Lin, Pi-Chun Juan, Chi-Hsien Huang, Dorota G. Pijanowska, Jer-Chyi Wang, Jung-Ruey Tsai, “Nitrogen ratio and RTA optimization on sputtered TiN/SiO2/Si electrolyte-insulator-semiconductor structure for pH sensing characteristics,” Vacuum, vol. 118, pp. 113–117, Aug. 2015. (SCI/EI)

12.Jer-Chyi Wang*, Chun-Hsiang Chiu, and Yu-Ren Ye, “Ultra-large resistance ratio of silver programmable metallization cell with stacked silicon oxide films,” Vacuum, vol. 118, pp. 80–84, Aug. 2015. (SCI/EI)

13.Jer-Chyi Wang*, Chun-Hsiang Chiu, and Wei-Fan Chen, “Thickness-Optimized Multilevel Resistive Switching of Silver Programmable Metallization Cells With Stacked SiOx/SiO2 Solid Electrolytes,” IEEE Transactions on Electron Devices, vol. 62, no. 5, pp. 1478–1483, May 2015. (SCI/EI)

14.Yu-Ren Ye, Jer-Chyi Wang*, and Ya-Ting Chan, “Anion sensing and interfering behaviors of electrolyte-insulator-semiconductor sensors with nitrogen plasma-treated samarium oxide,” Japanese Journal of Applied Physics, vol. 54, no. 4S, p. 04DL04, Apr. 2015. (SCI/EI)

15.Jer-Chyi Wang*, Chia-Hsin Chen, and Chih-Ting Lin, “Thickness dependence of Al2O3/HfO2/Al2O3 stacked tunneling layers on gadolinium oxide nanocrystal nonvolatile memory,” Microelectronic Engineering, vol. 138, pp. 52–56, 20 Apr. 2015. (SCI/EI)

16.Jer-Chyi Wang*, Chin-Hsiang Liao, Chih-Ting Lin, Ruey-Dar Chang, Li-Chun Chang, Chih-I Wu, and Jung-Hung Chang, “Charge storage characteristics of nonvolatile memories with chemically-synthesized and vacuum-deposited gold nanoparticles,” Current Applied Physics, vol. 15, no. 4, pp. 535–540, Apr. 2015. (SCI/EI)

17.Jer-Chyi Wang*, Yu-Ren Ye, and Yu-Hsuan Lin, “Light-Addressable Potentiometric Sensor with Nitrogen Incorporated Ceramic Sm2O3 Membrane for Chloride Ions Detection,” Journal of the American Ceramic Society, vol. 98, no. 2, pp. 443–447, Feb. 2015. (SCI/EI)

18.Jer-Chyi Wang*, Rajat Subhra Karmakar, Yu-Jen Lu, Chiung-Yin Huang, and Kuo-Chen Wei, “Characterization of Piezoresistive PEDOT:PSS Pressure Sensors with Inter-Digitated and Cross-Point Electrode Structures,” Sensors, vol. 15, no. 1, pp. 818–831, Jan. 2015. (SCI/EI)

19.Chia-Ming Yang, Tseng-Fu Lu, Kuan-I Ho, Jer-Chyi Wang, Dorota G. Pijanowska, Bohdan Jaroszewicz, and Chao-Sung Lai, “HfOxFy Based ISFETs with Reactive Fluorine Doping for K+ ion Detection,” International Journal of Electrochemical Science, vol. 9, no. 12, pp. 7069–7082, Dec. 2014. (SCI/EI)

20.Fang Yuan, Zhigang Zhang, Jer-Chyi Wang*, Liyang Pan, Jun Xu*, and Chao-Sung Lai, “Total ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlOx/Pt RRAM device,” Nanoscale Research Letters, vol. 9, no. 1, p. 452, 29 Aug. 2014. (SCI/EI)

21.Jer-Chyi Wang*, Chih-Hsien Hsu, Yu-Ren Ye, Chao-Sung Lai, Chi-Fong Ai, and Wen-Fa Tsai, “High-Performance Multilevel Resistive Switching Gadolinium Oxide Memristors With Hydrogen Plasma Immersion Ion Implantation Treatment,” IEEE Electron Device Letters, vol. 35, no. 4, pp. 452–454, Apr. 2014. (SCI/EI)

22.Chyuan-Haur Kao, Hsiang Chen, Lien-Tai Kuo, Jer-Chyi Wang, Yun-Ti Chen, Yu-Cheng Chu, Chian-You Chen, Chao-Sung Lai, Shan Wei Chang, Che Wei Chang, “Multi-analyte biosensors on a CF4 plasma treated Nb2O5-based membrane with an extended gate field effect transistor structure,” Sensors & Actuators B: Chemical, vol. 194, pp. 419–426, Apr. 2014. (SCI/EI)

23.Jer-Chyi Wang*, Wei-Cheng Chang, Chao-Sung Lai, Li-Chun Chang, Chi-Fong Ai, and Wen-Fa Tsai, “Oxygen plasma immersion ion implantation treatment to enhance data retention of tungsten nanocrystal nonvolatile memory,” Journal of Vacuum Science & Technology A, vol. 32, no. 2, p. 02B112, Mar. 2014. (SCI/EI)

24.Jer-Chyi Wang*, Chih-Hsien Hsu, Yu-Ren Ye, Chi-Fong Ai, and Wen-Fa Tsai, “Performance improvement of gadolinium oxide resistive random access memory treated by hydrogen plasma immersion ion implantation,” Journal of Vacuum Science & Technology A, vol. 32, no. 2, p. 02B108, Mar. 2014. (SCI/EI)

25.Jer-Chyi Wang*, Chih-Ting Lin, and Chi-Feng Chang, “Effects of charge storage dielectric thickness on hybrid gadolinium oxide nanocrystal and charge trapping nonvolatile memory,” Current Applied Physics, vol. 14, no. 3, pp. 232–236, Mar. 2014. (SCI/EI)

26.Fang Yuan, Jer-Chyi Wang*, Zhigang Zhang, Yu-Ren Ye, Liyang Pan, Jun Xu, and Chao-Sung Lai, “Hybrid aluminum and indium conducting filaments for non-polar resistive switching of Al/AlOx/ITO flexible device,” Applied Physics Express, vol. 7, no. 2, p. 024204, Feb. 2014. (SCI/EI)

27.Jer-Chyi Wang*, Yu-Hsuan Lin, Yu-Ren Ye, Chao-Sung Lai, Chi-Fong Ai, and Wen-Fa Tsai, “Hybrid anion and cation ion sensors with samarium oxide sensing membrane treated by nitrogen plasma immersion ion implantation,” Sensors & Actuators B: Chemical, vol. 191, pp. 666–672, Feb. 2014. (SCI/EI)

28.Chia-Ming Yang, Jer-Chyi Wang, Tzu-Wen Chiang, Yi-Ting Lin, Teng-Wei Juan, Tsung-Cheng Chen, Ming-Yang Shih, Cheng-En Lue, and Chao-Sung Lai, “Hydrogen ion sensing characteristics of IGZO/Si electrode in EGFET,” International Journal of Nanotechnology, vol. 11, nos. 1/2/3/4, pp. 15–26, Jan. 2014. (SCI/EI)

29.Jer-Chyi Wang*, Yu-Ren Ye, Ying-Huei Wu, Chi-Fong Ai, and Wen-Fa Tsai, “Characteristics of nitrogen plasma immersion ion implantation treatment on gadolinium oxide resistive switching random access memory,” International Journal of Nanotechnology, vol. 11, nos. 1/2/3/4, pp. 135–144, Jan. 2014. (SCI/EI)

30.Fang Yuan, Yu-Ren Ye, Chao-Sung Lai, Jer-Chyi Wang*, Zhigang Zhang, Liyang Pan, and Jun Xu, “Retention behavior of graphene oxide resistive switching memory,” International Journal of Nanotechnology, vol. 11, nos. 1/2/3/4, pp. 106–115, Jan. 2014. (SCI/EI)

31.Chyuan-Haur Kao, Hsiang Chen, Jer-Chyi Wang, Yu-Cheng Chu, Chiao-Sung Lai, Shih-Po Lin, Chuan-Yu Huang, and Jiun-Cheng Ou, “Deposition of High-k Samarium Oxide Membrane on Polysilicon for the Extented-Gate Field-Effect Transistor (EGFET) Applications,” Journal of New Materials for Electrochemical Systems, vol. 17, pp. 13–16, Jan. 2014. (SCI/EI)

32.Jer-Chyi Wang*, De-Yuan Jian, Yu-Ren Ye, and Li-Chun Chang, “Platinumaluminum alloy electrode for retention improvement of gadolinium oxide resistive switching memory,” Applied Physics A, vol. 113, no. 1, pp. 37-40, Oct. 2013. (SCI/EI)

33.Chia-Ming Yang, Jer-Chyi Wang, Wei-Ping Lee, Chien-Chi Lee, Chih-Hung Lin, Chung Yuan Lee, Jo-Hui Lin, Hsin-Huei Chen, Chih-Yuan Hsiao, Ruey-Dar Chang, and Chao-Sung Lai, “Superior Improvements in GIDL and Retention by Fluorine Implantation in Saddle-Fin Array Devices for Sub-40-nm DRAM Technology,” IEEE Electron Device Letters, vol. 34, no. 9, pp. 1124-1126, Sept. 2013. (SCI/EI)

34.Jer-Chyi Wang*, Chia-Hsin Chen, Hsiang-Yu Liu, Chih-Ting Lin, and Hsin-Chun Lu, “Zero interface dipole induced threshold voltage shift of HfO2/SiO2 gate dielectric stacks with NH3 plasma treatment,” Microelectronic Engineering, vol. 109, pp. 120-122, Sept. 2013. (SCI/EI)

35.Jer-Chyi Wang*, De-Yuan Jian, Yu-Ren Ye, Li-Chun Chang, and Chao-Sung Lai, “Characteristics of gadolinium oxide resistive switching memory with Pt–Al alloy top electrode and post-metallization annealing,” Journal of Physics D: Applied Physics, vol. 46, no. 27, pp. 275103, 10 July, 2013. (SCI/EI)

36.Jer-Chyi Wang*, Yu-Ren Ye, Chao-Sung Lai, Chih-Ting Lin, Hsin-Chun Lu, Chih-I Wu, and Po-Sheng Wang, “Characterization of gadolinium oxide thin films with CF4 plasma treatment for resistive switching memory applications,” Applied Surface Science, vol. 276, pp. 497-501, 1 July, 2013. (SCI/EI)

37.Jung-Hsiang Yang, Tseng-Fu Lu, Jer-Chyi Wang, Chia- Ming Yang, Dorota G. Pijanowska, Chi-Hang Chin, Cheng-En Lue, and Chao Sung Lai, “LAPS with nanoscaled and highly polarized HfO2 by CF4 plasma for NH4+ detection,” Sensors & Actuators B: Chemical, vol. 180, pp. 71-76, Apr. 2013. (SCI/EI)

38.Chih-Ting Lin, Jer-Chyi Wang*, Po-Wei Huang, Yu-Yen Chen, and Li-Chun Chang, “Performance Revelation and Optimization of Gold Nanocrystal for Future Nonvolatile Memory Application,” Japanese Journal of Applied Physics, vol. 52, no. 4S, p. 04CJ09, Apr. 2013. (SCI/EI)

39.Jer-Chyi Wang*, Yu-Ren Ye, Jhih-Sian Syu, Pin-Ru Wu, Chih-I Wu, Po-Sheng Wang, and Jung Hung Chang, “Low-Power and High-Reliability Gadolinium Oxide Resistive Switching Memory with Remote Ammonia Plasma Treatment,” Japanese Journal of Applied Physics, vol. 52, no. 4S, p. 04CD07, Apr. 2013. (SCI/EI)

40.Jer-Chyi Wang*, Chih-Ting Lin, Po-Wei Huang, Chao-Sung Lai, Li-Chun Chang, Chih-I Wu, and Jung-Hung Chang, “Hybrid polarity and carrier injection of gold and gadolinium oxide bi-nanocrystals structure,” Applied Physics Letters, vol. 102, no. 8, p. 083507, 25 Feb., 2013. (SCI/EI)

41.Wen-Kuan Yeh, Po-Ying Chen, Kwang-Jow Gan, Jer-Chyi Wang, and Chao Sung Lai, “The impact of interface/border defect on performance and reliability of high-k/metal-gate CMOSFET,” Microelectronics Reliability, vol. 53, no. 2, pp. 265-269, Feb. 2013. (SCI/EI)

42.Chi-Hsien Huang, Chih-Ting Lin, Jer-Chyi Wang, Chien Chou, Yu-Ren Ye, Bing-Ming Cheng and Chao-Sung Lai, “Tunable bandgap energy of fluorinated nanocrystals for flash memory applications produced by low-damage plasma treatment,” Nanotechnology, vol. 23, no. 47, p. 475201, 30 Nov. 2012. (SCI/EI)

43.Chao-Sung Lai, Jer-Chyi Wang*, Li-Chun Chang, Yi-Kai Liao, Pai-Chi Chou, Wei-Cheng Chang, Chi-Fong Ai, and Wen-Fa Tsai, “Characteristics of Plasma Immersion Ion Implantation Treatment on Tungsten Nanocrystal Nonvolatile Memory,” Solid-State Electronics, vol. 77, pp. 31-34, Nov. 2012. (SCI/EI)

44.Chyuan-Haur Kao, Hsiang Chen, Chiao Sung Lai, Jer Chyi Wang, Shih Po Lin, Kung Shao Chen, Chuan-Yu Huang, and Jiun-Cheng Ou, “Erbium Oxide as pH-sensing Membranes in Extended Gate Field Effect Transistors,” Advanced Science Letters, vol. 17, p. 122, Oct. 2012. (EI)

45.Jer-Chyi Wang, Chih-Ting Lin, Chi-Hsien Huang, Chao-Sung Lai, and Chin-Hsiang Liao, “Charge storage and data retention characteristics of forming gas-annealed Gd2O3-nanocrystal nonvolatile memory cell,” Microelectronics Reliability, vol. 52, no. 8, pp. 1627-1631, Aug. 2012. (SCI/EI)

46.Michael R.S. Huang, Chuan-Pu Liu, Jer-Chyi Wang, Yu-Kai Chen, Chao-Sung Lai, Yu-Ching Fang, and Li Shu, “Microstructural effect of gadolinium oxide nanocrystals upon annealing on electrical properties of memory devices,” Thin Solid Films, vol. 520, no. 17, pp. 5579-5583, 30 Jun. 2012. (SCI/EI)

47.Jer-Chyi Wang, Chih-Ting Lin, Chia-Hsin Chen, Po-Wei Huang, and Chao-Sung Lai, “Dynamic Charge Centroid on Data Retention of Double-Nanostructure Nonvolatile Memory,” Applied Physics Express, vol. 5, no. 4, p. 044201, Apr. 2012. (SCI/EI)

48.Jer-Chyi Wang, Chih-Ting Lin, Pai-Chi Chou, and Chao-Sung Lai, “Gadolinium-Based Metal Oxide for Nonvolatile Memory Applications,” Microelectronics Reliability, vol. 52, no. 4, pp. 635-641, Apr. 2012. (SCI/EI)

49.I-Shun Wang, Yi-Ting Lin, Chi-Hsien Huang, Tseng-Fu Lu, Cheng-En Lue, Polung Yang, Dorota G Pijanswska, Chia-Ming Yang, Jer-Chyi Wang, Jau-Song Yu, Yu-Sun Chang, Chien Chou, and Chao-Sung Lai, “Immobilization of enzyme and antibody on ALD HfO2-EIS structure by NH3 plasma treatment,” Nanoscale Research Letters, vol. 7, no. 1, p. 179, 8 Mar. 2012. (SCI/EI)

50.Jer-Chyi Wang, Chih-Ting Lin, and Chia-Hsin Chen, “Gadolinium Oxide Nanocrystal Nonvolatile Memory with HfO2/Al2O3 Nanostructure Tunneling Layers,” Nanoscale Research Letters, vol. 7, no. 1, p. 177, 8 Mar. 2012. (SCI/EI)

51.Chyuan Haur Kao, Jer Chyi Wang, Chao Sung  Lai, Chuan Yu  Huang, Jiun Cheng  Ou, and Hsin Yuan  Wang, “Ti-doped Gd2O3 Sensing Membrane for Electrolyte-Insulator-Semiconductor pH Sensor,” Thin Solid Films, vol. 520, no. 10, pp. 3760-3763, 1 Mar. 2012. (SCI/EI)

52.Jer-Chyi Wang, Tseng-Fu Lu, Hui-Yu Shih, Chia-Ming Yang, Chao-Sung Lai, Chyuan-Haur Kao, and Tung-Ming Pan, “pH Sensing Characterization of Programmable Sm2O3/Si3N4/SiO2/Si EIS Sensor with Rapid Thermal Annealing,” Japanese Journal of Applied Physics, vol. 50, no. 10S, p. 10PG04, Oct. 2011. (SCI/EI)

53.Tseng-Fu Lu, Hao-Chun Chuang, Jer-Chyi Wang, Chia-Ming Yang, Pei-Chun Kuo, and Chao-Sung Lai, “Effects of Thickness Effect and Rapid Thermal Annealing on pH Sensing Characteristics of Thin HfO2 Films by Atomic Layer Deposition,” Japanese Journal of Applied Physics, vol. 50, no. 10S, p. 10PG03, Oct. 2011. (SCI/EI)

54.Jer-Chyi Wang, Hsing-Kan Peng, Chao-Sung Lai, Pai-Chi Chou, and Min-Jer Lee, “Effects of HfMoN Metal Gate and Self-aligned Fluorine Ion Implantation on Negative Bias Temperature Instability of pMOSFETs with Gd2O3 Gate Dielectrics,” IEEE Electron Device Letters, vol. 32, no. 8, pp. 1017-1019, Aug. 2011. (SCI/EI)

55.Jer-Chyi Wang, Pai-Chi Chou, Chao-Sung Lai, Jer-Yi Lin, Wei-Cheng Chang, Hsin-Chun Lu, Chih-I Wu, and Po-Sheng Wang, “Zero dipole formation at HfGdO/SiO2 interface by Hf/Gd dual-sputtered method,” Journal of the Electrochemical Society, vol. 158, no. 5, pp. H502-H505, May 2011. (SCI/EI)

56.Chi-Hang Chin, Tseng-Fu Lu, Jer-Chyi Wang, Jung-Hsiang Yang, Cheng-En Lue, Chia-Ming Yang, Sheng-Shian Li, and Chao-Sung Lai, “Effect of CF4 plasma treatment on pH- and pNa-sensing properties of light-addressable potentiometric sensor with 2 nm-thick HfO2 sensitive layer grown by atomic layer deposition,” Japanese Journal of Applied Physics, vol. 50, no. 4S, p. 04DL06, Apr. 2011. (SCI/EI)

57.Jer-Chyi Wang, Tseng-Fu Lu, Hui-Yu Shih, Chia-Ming Yang, Chao-Sung Lai, Chyuan-Haur Kao and Tung-Ming Pan, “Reference Electrode-Insulator-Nitride-Oxide- Semiconductor (RINOS) Structure with Sm2O3 Sensing Membrane for pH-Sensor Application,” Japanese Journal of Applied Physics, vol. 50, no. 4S, p. 04DL09, Apr. 2011. (SCI/EI)

58.Tseng-Fu Lu, Chia-Ming Yang, Jer-Chyi Wang, Kuan-I Ho, Chi-Hung Chin, Dorota G. Pijanowska, Bohdan Jaroszewicz, and Chao-Sung Lai, “Characterization of K+ and Na+-Sensitive Membrane Fabricated by CF4 plasma Treatment on Hafnium Oxide Thin Films for ISFET,” Journal of the Electrochemical Society, vol. 158, no. 4, pp. J91-J95, Apr. 2011. (SCI/EI)

59.Jer-Chyi Wang and Chih-Ting Lin, “CF4 Plasma Treatment on Nano-Structure Band Engineered Gd2O3-Nanocrystal Nonvolatile Memory,” Journal of Applied Physics, vol. 109, no. 6, p. 064506, 15 Mar., 2011. (SCI/EI)

60.Jer-Chyi Wang, Pai-Chi Chou, Chao-Sung Lai, and Li-Chi Liu, “Dual-sputtered Process Sensitivity of HfGdO Charge Trapping Layer in SONOS-Type Nonvolatile Memory,” Journal of Vacuum Science & Technology B, vol. 29, no. 1, p. 011009, Jan./Feb. 2011. (SCI/EI)

61.Jer-Chyi Wang, Chih-Ting Lin, Chao-Sung Lai, Jui-Lin Hsu, and Chi-Fong Ai, “Improved Characteristics of Gd2O3 Nanocrystal Memory with Substrate High-Low Junction,” Solid-State Electronics, vol. 54, no. 12, pp. 1493-1496, Dec. 2010. (SCI/EI)

62.Jer-Chyi Wang, Chih-Ting Lin, Chao-Sung Lai, and Jui-Lin Hsu, “Nano-Structure Band Engineering of Gadolinium Oxide Nanocrystal Memory by CF4 plasma Treatment,” Applied Physics Letters, vol. 97, no. 2, p. 023513, 12 July, 2010. (Also appeared in Virtual Journal of Nanoscale Science & Technology)  (SCI/EI)

63.Cheng-En Lue, Jer-Chyi Wang, Dorota G. Pijanowska, Chia-Ming Yang, I-Shun Wang, Huang-Chia Lee, and Chao-Sung Lai, “Hysteresis effect on traps of Si3N4 sensing membranes for pH difference sensitivity,” Microelectronics Reliability, vol. 50, no. 5, pp. 738-741, May 2010. (SCI/EI)

64.Tseng-Fu Lu, Jer-Chyi Wang, Chia-Ming Yang, Chung-Po Chang, Kuan-I Ho, Chi-Fong Ai, and Chao-Sung Lai, “Non-ideal effects improvement of SF6 plasma treated hafnium oxide film based on electrolyte–insulator–semiconductor structure for pH-sensor application,” Microelectronics Reliability, vol. 50, no. 5, pp. 742-746, May 2010. (SCI/EI)

65.Jer-Chyi Wang, Pai-Chi Chou, Chao-Sung Lai, Wen-Hui Lee, and Chi-Fong Ai, “Characteristics optimization of N2O annealing on tungsten nanocrystal with W/Si dual-sputtered method for nonvolatile memory application,” Microelectronics Reliability, vol. 50, no. 5, pp. 639-642, May 2010. (SCI/EI)

66.Hsing-Kan Peng, Chao-Sung Lai, Jer-Chyi Wang, “Threshold Voltage Tunability of p-Channel Metal Oxide Semiconductor Field-Effect Transistor with Ternary HfxMoyNz Metal Gate and Gd2O3 High-k Gate Dielectric,” Japanese Journal of Applied Physics, vol. 49, no. 4S, p. 04DA15, Apr. 2010. (SCI/EI)

67.Cheng-En Lue, Chao-Sung Lai, Jer-Chyi Wang, Ching-Mie Wu, and Chia-Ming Yang, “Differential Light Addressable Potentiometric Sensor with Poly(vinyl chloride) and HfO2 Membranes for pH Sensors,” Japanese Journal of Applied Physics, vol. 49, no. 4S, p. 04DL10, Apr. 2010. (SCI/EI)

68.Jer-Chyi Wang, Chao-Sung Lai, Yu-Kai Chen, Chih-Ting Lin, Chuan-Pu Liu, Michael R. S. Huang, and Yu-Ching Fang, “Characteristics of Gadolinium Oxide Nanocrystal Memory with Optimized Rapid Thermal Annealing,” Electrochemical and Solid-State Letters, vol. 12, no. 6, pp. H202-H204, June 2009. (SCI/EI)

69.Pai-Chi Chou, Chao-Sung Lai, Jer-Chyi Wang, Woei-Cherng Wu, Li-Chi Liu, Yu-Ching Fang, Li Hsu, and Hui-Chun Wang, “High-k HfxGdyOz Charge Trapping Layer in Silicon–Oxide–Nitride–Silicon Type Nonvolatile Memory by In situ Radio Frequency Dual-Sputtering Method,” Japanese Journal of Applied Physics, vol. 48, no. 5, p. 05DF01, May 2009. (SCI/EI)

70.Woei-Cherng Wu, Tien-Sheng Chao, Te-Hsin Chiu, Jer-Chyi Wang, Chao-Sung Lai, Ming-Wen Ma, and Wen-Cheng Lo, “Positive Bias Temperature Instability (PBTI) Characteristics of Contact-Etch-Stop-Layer-Induced Local-Tensile-Strained HfO2 nMOSFET,” IEEE Electron Device Letters, vol. 29, no. 12, pp. 1340-1343, Dec. 2008. (SCI/EI)

71.Woei-Cherng Wu, Tien-Sheng Chao, Te-Hsin Chiu, Jer-Chyi Wang, Chao-Sung Lai, Ming-Wen Ma, and Wen-Cheng Lo, “Performance and Interface Characterization for Contact Etch Stop Layer–Strained nMOSFET with HfO2 Gate Dielectrics under Pulsed-IV Measurement,” Electrochemical and Solid-State Letters, vol. 11, no. 8, pp. H230-H232, Aug. 2008. (SCI/EI)

72.Woei Cherng Wu, Chao-Sung Lai, Tzu-Ming Wang, Jer-Chyi Wang, Chih Wei Hsu, Ming Wen Ma, Wen-Cheng Lo, and Tien Sheng Chao, “Carrier Transportation Mechanism of the TaN/HfO2/IL/Si Structure with Silicon Surface Fluorine Implantation,” IEEE Trans. on Electron Devices, vol. 55, no. 7, pp. 1639-1646, July 2008. (SCI/EI)

73.Woei-Cherng Wu, Chao-Sung Lai, Zhu Ming Wang, Jer-Chyi Wang, Ming Wen Ma, and Tien-Sheng Chao “Current Transport Mechanism for HfO2 Gate Dielectric with Fluorine Incorporation,” Electrochemical and Solid-State Letters, vol. 11, no. 1, pp. H15-H18, Jan. 2008. (SCI/EI)

74.Woei-Cherng Wu, Chao-Sung Lai, Jer-Chyi Wang, Jian Hao Chen, Ming Wen Ma and Tien-Sheng Chao “High Performance HfO2 Gate Dielectrics Fluorinated by Post-deposition CF4 Plasma Treatment,” Journal of the Electrochemical Society vol. 154, no. 7, pp. H561-H565, July 2007. (SCI/EI)

75.Woei-Cherng Wu, Tien-Sheng Chao, Wu-Ching Peng, Wen-Luh Yang, Jer-Chyi Wang, Jain-Hao Chen, Chao-Sung Lai, and Tsung-Yu Yang, “Highly reliable multilevel and 2-bit/cell operation of wrapped select gate (WSG) SONOS memory,” IEEE Electron Device Letters, vol. 28, no.3, pp. 214-216, Mar. 2007. (SCI/EI)

76.Chao Sung Lai, Woei Cherng Wu, Tien Sheng Chao, Jian Hao Chen, Jer Chyi Wang, Li Lin Tay, and Nelson Rowell, “Suppression of Interfacial Reaction for HfO2 on Silicon by Pre-CF4 Plasma Treatment,” Applied Physics Letters, vol. 89, no. 7, p. 072904, 14 Aug., 2006. (SCI/EI)

77.Chao Sung Lai, Shing Kan Peng, Tung Ming Pan, Jer Chyi Wang, and Kung Ming Fan, “Work Function Adjustment by Nitrogen Incorporation in HfNx Gate Electrode with Post Metal Annealing,” Electrochemical and Solid-State Letters, vol. 9, no. 7, pp. G239-G241, July, 2006. (SCI/EI)

78.Chao Sung Lai, Woei Cherng Wu, Jer Chyi Wang, and Tien Sheng Chao, “Characteristics of Fluorine Implantation for HfO2 Gate Dielectrics with High-Temperature Post-deposition Annealing,” Japanese Journal of Applied Physics, vol. 45, no. 4B, pp. 2893–2897, April, 2006. (SCI/EI)

79.Tung Ming Pan, Chao Sung Lai, Hui Hsin Hsu, Chun Lin Chen, Jian Der Lee, Kuan Ti Wang, and Jer Chyi Wang, “Excellent Frequency Dispersion of Thin Gadolinium Oxide High-k Gate Dielectrics,” Applied Physics Letters, vol. 87, no. 26, p. 262908, 26 Dec., 2005. (SCI/EI)

80.Jer Chyi Wang, De Ching Shie, Tan Fu Lei, and Chung Len Lee, “Soft Breakdown of Hafnium Oxynitride Gate Dielectrics,” Journal of Applied Physics, vol. 98, no. 2, p. 024503, 15 July, 2005. (SCI/EI)

81.Chao Sung Lai, Woei Cherng Wu, Jer Chyi Wang, and Tien sheng Chao, “Characterization of CF4-plasma Fluorinated HfO2 Gate Dielectrics with TaN Metal Gate,” Applied Physics Letters, vol. 86, no. 22, p. 222905, 30 May, 2005. (SCI/EI)

82.Chao Sung Lai, Woei Cherng Wu, Kung Ming Fan, Jer Chyi Wang, and Shian Jyh Lin, “Effects of Post CF4 Plasma Treatment on the HfO2 Thin Film,” Japanese Journal of Applied Physics, vol. 44, no. 4B, pp. 2307–2310, April, 2005. (SCI/EI)

83.Jer Chyi Wang, Kuo Cheng Chiang, Tan Fu Lei, and Chung Len Lee, “Carrier Transportation of Rapid Thermal Annealed CeO2 Gate Dielectrics,” Electrochemical and Solid-State Letters, vol. 7, no. 12, pp. E55-E57, Dec., 2004. (SCI/EI)

84.J. C. Wang, D. C. Shie, T. F. Lei, and C. L. Lee, “Turnaround of hysterisis for capacitance-voltage characteristics of hafnium oxynitride dielectrics,” Applied Physics Letters, vol. 84, no. 9, pp. 1531-1533, 1 Mar., 2004. (SCI/EI)

85.Jer Chyi Wang, Yen Ping Hung, Chung Len Lee, and Tan Fu Lei, “Improved Characteristics of Ultra-Thin CeO2 by Using Post Nitridation Annealing,” Journal of the Electrochemical Society, vol. 151, no. 2, pp. F17-F21, Feb., 2004. (SCI/EI)

86.Jer Chyi Wang, Jam Wem Lee, Liang Tai Kuo, Tan Fu Lei, and Chung Len Lee, “High Reliability Ultra-Thin Interpoly-Oxynitride Dielectrics Prepared by N2O Plasma Annealing,” Journal of the Electrochemical Society, vol. 150, no. 12, pp. G730-734, Dec., 2003. (SCI/EI)

87.Jer Chyi Wang, De Ching Shie, Tan Fu Lei, and Chung Len Lee, “Characterization of Temperature Dependence for HfO2 Gate Dielectrics Treated in NH3 Plasma,” Electrochemical and Solid-State Letters, vol. 6, no. 10, pp. F34-F36, Oct., 2003. (SCI/EI)

88.J. C. Wang, S. H. Chiao, C. L. Lee, T. F. Lei, Y. M. Lin, M. F. Wang, S. C. Chen, C. H. Yu, and M. S. Liang, “A Physical Model for the Hysteresis Phenomenon of the Ultra-thin ZrO2 Film,” Journal of Applied Physics, vol. 92, no. 7, pp. 3936-3940, 1 Oct., 2002. (SCI/EI)

1.Yi-Pei Jiang, Tzu-Chuan Yang, Shun-Hsiang Chan, Ming-Chung Wu, and Jer-Chyi Wang*, “Ferroelectric Characteristics Enhancement of P(VDF-TrFE) Capacitors with Modified Solvent Vapor Annealing Process,” Solid State Devices and Materials (SSDM), Sept. 9-13, 2018.

2.Ya-Ting Chan, Yi Fu, Tzu-Ming Chu, and Jer-Chyi Wang*, “Superior Multilevel Resistive Switching Behaviors of N2-Plasma-Treated Stacked SiNx/GdOx RRAMs,” Solid State Devices and Materials (SSDM), Sept. 9-13, 2018.

3.Jer-Chyi Wang* and Rajat Subhra Karmakar, “PEDOT:PSS Piezoresistive Pressure Sensors with Nitrogen Plasma Surface Modification,” 2018 8th IEEE International NanoElectronics Conference (IEEE INEC), Jan. 3-5, 2018. (Invited)

4.Jer-Chyi Wang*, “Effects of Device Structures on Piezoresistive Behaviors of PEDOT: PSS Pressure Sensors,” The IEEE 12th International Conference on ASIC (ASICON 2017), Oct. 25-28, 2017. (Invited)

5.Kai-Ping Chang, Han-Hsiang Tai, Jer-Chyi Wang*, and Chao-Sung Lai*, “Graphene Nanodots with High-K Dielectrics for Flash Memory Applications,” The IEEE 12th International Conference on ASIC (ASICON 2017), Oct. 25-28, 2017.

6.Ya-Ting Chan, Bo-Xiang Wang, and Jer-Chyi Wang*, “Stacked SiOx/HfO2 Solid Electrolytes of Silver Programmable Metallization Cells with NH3 Plasma Treatment,” The 13th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2017), Oct. 18-20, 2017.

7.Yi-Pei Jiang, Yu-Jie Lin, Shun-Hsiang Chan, Ming-Chung Wu, and Jer-Chyi Wang*, “Performance Optimization of PVDF-TrFE Ferroelectric Capacitor with CF4 Plasma Treatment,” International Electron Device and Materials Symposium (IEDMS) 2017, Sept. 6–8, 2017.

8.Yi-Pei Jiang, Yu-Jie Lin, Shun-Hsiang Chan, Ming-Chung Wu, and Jer-Chyi Wang*, “CF4 plasma modification of PVDFTrFE film with enhanced ferroelectric characteristics,” The 14th International Symposium on Sputtering and Plasma Processes (ISSP), Jul. 05-07, 2017.

9.Ya-Ting Chan, Bo-Xiang Wang, and Jer-Chyi Wang*, “Ammonia plasma treatment on stacked SiOx/HfO2 solid electrolytes of silver programmable metallization cells with tunable multilevel resistive switching behaviors,” The 14th International Symposium on Sputtering and Plasma Processes (ISSP), Jul. 05-07, 2017.

10.Yi-Pei Jiang, Shun-Hsiang Chan, Jer-Chyi Wang*, and Ming-Chung Wu, “Characteristics of PVDF-TrFE Ferroelectric Capacitor with Optimized Crystallization Annealing,” International Electron Device and Materials Symposium (IEDMS), Nov. 24-25, 2016.

11.Yu-Hua Liu and Jer-Chyi Wang*, “Effects of CF4 Plasma Treatment Power on Blocking Oxide Layer of Gated-Injected Gold-Nanoparticle Nonvolatile Memory,” International Electron Device and Materials Symposium (IEDMS), Nov. 24-25, 2016.

12.Ya-Ting Chan, Wei-Fan Chen, Jer-Chyi Wang*, and Chao-Sung Lai, “Resistive Switching Characteristics of Silver Programmable Metallization Cells with Ag/GdxOy/AlxOy/Ir Structure,” International Electron Device and Materials Symposium (IEDMS), Nov. 24-25, 2016.

13.Kai-Ping Chang, Jer-Chyi Wang*, Chang-Hsiao Chen, Lain-Jong Li, and Chao-Sung Lai, “Monolayer MoS2 For Nonvolatile Memory Applications,” 2016 IEEE 13th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Oct. 25-28, 2016.

14.Jer-Chyi Wang*, Yu-Ren Ye, De-Yuan Jian, Ying-Huei Wu, and Chih-Hsien Hsu, “Plasma technology on gadolinium oxide-based resistive random access memory,” 2016 IEEE 13th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Oct. 25-28, 2016. (Invited)

15.Yu-Hua Liu, Jer-Chyi Wang*, Tsung-Chin Cheng, and Chih-I Wu, “Robust Gate-Injected-Operation of Gold Nanoparticle Nonvolatile Memory with Low-Damage CF4-Plasma-Treated Blocking Oxide Layer,” Solid State Devices and Materials (SSDM), Sept. 26-19, 2016.

16.Yi Fu, Rajat Subhra Karmakar, Jer-Chyi Wang*, Yu-Jen Lu, Chiung-Yin Huang, and Kuo-Chen Wei, “Cross-Talk Effects of 22 Cross-Point Pressure Sensor Array With Gold-Nanoparticle Incorporated PEDOT:PSS Piezoresistive Layer,” 2016 7th IEEE International NanoElectronics Conference (IEEE INEC), May 9-11, 2016.

17.Jer-Chyi Wang*, Chun-Hsiang Chiu, Wei-Fan Chen, and Ya-Ting Chan, “Multilevel Resistive Switching of Silver Programmable Metallization Cells with Stacked Solid Electrolytes,” 2016 7th IEEE International NanoElectronics Conference (IEEE INEC), May 9-11, 2016. (Invited)

18.Rajat Subhra Karmakar, Yi Fu, Jer-Chyi Wang*, Yu-Jen Lu, and Kuo-Chen Wei, “Gold Nanoparticles Incorporated PEDOT:PSS Films for Piezoresistive Pressure Sensing Applications,” International Symposium on Next-Generation Electronics (ISNE2016), May 3-6, 2016.

19.Ya-Ting Chan, Wei-Fan Chen, Jer-Chyi Wang*, and Chao-Sung Lai, “Silver Programmable Metallization Cells with GdxOy/AlxOy Solid Electrolytes and Different Bottom Electrodes,” International Symposium on Next-Generation Electronics (ISNE2016), May 3-6, 2016.

20.Ya-Ting Chan, Wei-Fan Chen, Jer-Chyi Wang*, and Chao-Sung Lai, “Effects of Bottom Electrode and AlxOy Interfacial Layer on Silver Programmable Metallization Cells with GdxOy Solid Electrolyte,” International Electron Device and Materials Symposium (IEDMS), Nov. 19-20, 2015.

21.Rajat Subhra Karmakar, Yi Fu, Jer-Chyi Wang*, Yu-Jen Lu, and Kuo-Chen We, “Piezoresistive Characteristics of PEDOT:PSS Pressure Sensors with Gold Nanoparticles Incorporation,” International Electron Device and Materials Symposium (IEDMS), Nov. 19-20, 2015.

22.Chun-Hui Chen, Chia-Ming Yang, Liann-Be Chang, Jer-Chyi Wang, Chao-Sung Lai, “IGZO Substrate for PH Detection in LAPS with High Photo Response,” Solid State Devices and Materials (SSDM), Sept. 27-30, 2015.

23.Rajat Subhra Karmakar, Yi Fu, Shih-Hung Chen, Jer-Chyi Wang*, Yu-Jen Lu, Chiung-Yin Huang, Kuo-Chen Wei, and Chao-Sung Lai, “Cross-Talk Immunity of Gold-Nanoparticle Incorporated PEDOT:PSS Pressure Sensors with 22 Cross-Point Array Structure,” Solid State Devices and Materials (SSDM), Sept. 27-30, 2015.

24.Yi-Pei Chiang, Kai-Ping Chang, and Jer-Chyi Wang*, “Performance Optimization of Double-Sputtered Gadolinium Oxide Nanocrystal Memories with Different Stacked Film Thicknesses,” The 13rd International Symposium on Sputtering & Plasma Processes (ISSP2015), July 8-10, 2015.

25.Kai-Ping Chang, Chin-Hsiang Liao, Jer-Chyi Wang*, Chao-Sung Lai, and Ruey-Dar Chang, “Low-Damage Ammonia Plasma Treatment on Nonvolatile Memory with Chemically-Synthesized Gold Nanoparticles,” The 13rd International Symposium on Sputtering & Plasma Processes (ISSP2015), July 8-10, 2015.

26.Jer-Chyi Wang*, Chun-Hsiang Chiu, Ya-Ting Chan, and Chao-Sung Lai, “Analysis of Current Compliance on Resistive Switching of Silver Programmable Metallization Cells with Stacked SiOx/SiO2 Solid Electrolytes,” The 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2015), June 29 - July 2, 2015. (EI)

27.Yu-Hua Liu, Kai-Ping Chang, Yi-Pei Chiang, Jer-Chyi Wang*, and Chao-Sung Lai, “Enhanced Gate Injection Efficiency and Data Retention Characteristics of CF4 Plasma Treated Gold Nanocrystal Nonvolatile Memory,” International Conference on Materials for Advanced Technologies (ICMAT), June 28 - July 3 2015.

28.Jer-Chyi Wang*, “Novel Chloride Ion Sensors With Nitrogen Plasma Treated Samarium Oxide Sensing Membrane,” 2015 International Symposium on Smart-Sensing Technology (ISST) & the 20th Symposium of Association for Chemical Sensors in Taiwan (SACST), June 5, 2015. (Invited)

29.Rajat Subhra Karmakar, Jer-Chyi Wang*, Yu-Jen Lu, Chiung-Yin Huang, Kuo-Chen Wei, Chia-Ming Yang, Chao-Sung Lai, and Mu-Yi Hua, “Performance Enhancement of Piezoresisitive PEDOT:PSS Pressure Sensors with Nitrogen Plasma Treatment,” 4th International Conference on Bio-Sensing Technology, May 10-13, 2015.

30.Yu-Ren Ye, Jer-Chyi Wang, and Chao-Sung Lai, “Area Effect of Sensing Property on Schottky Emission Type Resistive Switching Random Access Memory Sensor Device,” International Electron Device and Materials Symposium (IEDMS), Nov. 20-21, 2014.

31.Yi-Pei Chiang, Kai-Ping Chang, Chih-Ting Lin, Chi-Feng Chang, Jer-Chyi Wang*, and Chao-Sung Lai, “Effects of Stacked Charge Storage Layers on Gadolinium Oxide Nanocrystal Nonvolatile Memory,” International Electron Device and Materials Symposium (IEDMS), Nov. 20-21, 2014.

32.Yu-Hua Liu, Chin-Hsiang Liao, Jer-Chyi Wang*, and Chao-Sung Lai “Tunneling Oxide Thickness Dependence on Carrier Injection of Gold Nanocrystal Nonvolatile Memory,” 2014 Taiwan ESD and Reliability Conference (TESDC2014), Nov. 3, 2014.

33.Ya-Ting Chan, Yu-Ren Ye, Jer-Chyi Wang*, and Chao-Sung Lai, “Anions Sensing and Interfering Behaviors of Electrolyte-Insulator-Semiconductor Sensors with Nitrogen Plasma Treated Samarium Oxide,” Solid State Devices and Materials (SSDM), Sept. 8-11, 2014.

34.Chin-Hsiang Liao, Yu-Hua Liu, Jer-Chyi Wang*, Li-Chun Chang, and Chao-Sung Lai, “Performance Enhancement of Colloidal Synthesis-Coated Au-Nanoparticle Nonvolatile Memory with Low Damage NH3 Plasma Treatment on SiO2 Tunneling Layer,” Solid State Devices and Materials (SSDM), Sept. 8-11, 2014.

35.Rajat Subhra Karmakar, Jer-Chyi Wang*, Yu-Jen Lu, Hsiang-Yu Liu, Chia-Ming Yang, Chao-Sung Lai, Wei-Lun Zou, Mu-Yi Hua, Ming-Yih Lee, Chiung-Yin Huang, and Kuo-Chen Wei, “Characteristics of Nitrogen-Contained Plasma Treatment on PEDOT:PSS Piezoresistive Pressure Sensors,” 2014 6th IEEE International NanoElectronics Conference (IEEE INEC), July 28-31, 2014.

36.Yu-Hua Liu, Chin-Hsiang Liao, Chih-Ting Lin, and Jer-Chyi Wang*, “Ambipolar Carrier Injection of Gold Nanocrystal Nonvolatile Memory with Different Tunneling Oxide Thickness,” 2014 6th IEEE International NanoElectronics Conference (IEEE INEC), July 28-31, 2014.

37.Jer-Chyi Wang*, “Effects of Plasma Treatment on Gadolinium Oxide Resistive Switching,” 2014 6th IEEE International NanoElectronics Conference (IEEE INEC), July 28-31, 2014. (Invited)

38.Fang Yuan, Zhigang Zhang, Jer-Chyi Wang*, Liyang Pan, Jun Xu, and Chao-Sung Lai, “Total Ionizing Dose (TID) Effects of γ Ray Radiation on Filament Based AlOx RRAM,” International Symposium on Next-Generation Electronics (ISNE2014), May 7-10, 2014.

39.Yu-Ren Ye, Jer-Chyi Wang*, and Chao-Sung Lai, “High Sensitivity in Solution on Schottky Emission Type Resistive Switching Random Access Memory,” International Symposium on Next-Generation Electronics (ISNE2014), May 7-10, 2014.

40.Rajat Subhra Karmakar, Jer-Chyi Wang*, Hsiang-Yu Liu, Yu-Jen Lu, Chia-Ming Yang, Chao-Sung Lai, Wei-Lun Zou, Mu-Yi Hua, Ming-Yih Lee, Chiung-Yin Huang, and Kuo-Chen Wei, “Piezoresistive Characteristics of PEDOT:PSS Pressure Sensor with Interdigitated and Cross-point Structure,” International Symposium on Next-Generation Electronics (ISNE2014), May 7-10, 2014.

41.Chun-Hsiang Chiu, Yu-Ren Ye, Jer-Chyi Wang*, Chia-Ming Yang, and Chao-Sung Lai, “Performance Enhancement of Silver Conductive Bridge Random Access Memory with Stacked Chemical Vapor Deposition and Thermal Oxide Layers,” International Symposium on Next-Generation Electronics (ISNE2014), May 7-10, 2014.

42.Chin-Hsiang Liao, Jer-Chyi Wang, Chih-Ting Lin, Chia-Hsin Chen, and Chao-Sung Lai, “Enhanced Characteristics of Gadolinium Oxide Nanocrystal Memory with Remote-Ammonia Plasma Treatment,” International Electron Device and Materials Symposium (IEDMS), Nov. 28-29, 2013.

43.Fang Yuan, Jer-Chyi Wang, Zhigang Zhang, Yu-Ren Ye, Liyang Pan, Jun Xu, and Chao-Sung Lai, “Bidirectional Unipolar Switching of Al/AlOx/ITO Flexible ReRAM,” 2013 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF-13), Nov. 7-9, 2013.

44.Kai-Ping Chang, Chin-Hsiang Liao, Chih-Ting Lin, Jer-Chyi Wang*, “Reliability Enhancement of the Gadolinium Oxide Nanocrystal Nonvolatile Memory with Remote NH3 Plasma Treatment,” 2013 Taiwan ESD and Reliability Conference (TESDC2013), Nov. 4, 2013.

45.Chih-Hsien Hsu, Yu-Ren Ye, Chun-Hsiang Chiu, Jer-Chyi Wang, Chao-Sung Lai, Chi-Fong Ai, Wen-Fa Tsai, “Hydrogen Plasma Immersion Ion Implantation Treatment on Gadolinium Oxide Resistive Switching Memory for Multilevel Cell Operation,” International Thin Films Conference (TACT2013), Oct. 5-9, 2013.

46.Chin-Hsiang Liao, Chih-Ting Lin, Jer-Chyi Wang, Chao-Sung Lai, Chih-I Wu, Jung-Hung Chang, “Material and Electrical Analysis of Solution-Dissolved and Self-Assembled Gold Nanocrystal Nonvolatile Memory,” International Thin Films Conference (TACT2013), Oct. 5-9, 2013.

47.Kai-Lun Chiang, Wei-Ping Lee, Chien-Chi Lee, Ching-Shan Sung, Chen-Kang Wei, Chia-Ming Yang, Jer-Chyi Wang, Ping Kao, Chung Yuan Lee, Hsin-Huei Chen, Chih-Yuan Hsiao, and Chao-Sung Lai, “Fluorine Ion Implantation Optimization in Saddle-Fin Array Devices for Sub-40-nm DRAM Technology,” Solid State Devices and Materials (SSDM), Sept. 24-27, 2013.

48.Yu-Ren Ye, Yu-Hsuan Lin, Yu-Han Chiang, Jer-Chyi Wang, Chao-Sung Lai, Chi-Fong Ai, Wen-Fa Tsai, Chun Chang, An-thung Cho, Jiun-Jye Chang, and Min-Feng Chiang, “Light-Addressable Potentiometric Sensor Treated by Nitrogen Plasma Immersion Ion Implantation for Chloride Ions Detection,” Solid State Devices and Materials (SSDM), Sept. 24-27, 2013.

49.Jer-Chyi Wang, Chih-Hsien Hsu, Yu-Ren Ye, Chao-Sung Lai, Chi-Fong Ai, Wen-Fa Tsai, “Multilevel Cell Operation of Gadolinium Oxide Resistive Switching Memory,” Energy Materials Nanotechnology (EMN) East Meeting, Sept. 7-10, 2013. (Invited)

50.Chih-Hsien Hsu, Yu-Ren Ye, Jer-Chyi Wang, Chun-Hsiang Chiu, Chao-Sung Lai, Chi-Fong Ai, and Wen-Fa Tsai, “Performance Improvement of Gadolinium Oxide Resistive Random Access Memory Treated by Hydrogen Plasma Immersion Ion Implantation,” The 12th International Symposium on Sputtering & Plasma Processes (ISSP2013), July 10-12, 2013.

51.Jer-Chyi Wang, Wei-Cheng Chang, Chao-Sung Lai, Li-Chun Chang, Chi-Fong Ai, and Wen-Fa Tsai, “Oxygen Plasma Immersion Ion Implantation Treatment to Enhance Data Retention of Tungsten Nanocrystal Nonvolatile Memory,” The 12th International Symposium on Sputtering & Plasma Processes (ISSP2013), July 10-12, 2013.

52.Chia-Hsin Chen, Chih-Ting Lin, Yu-Yen Chen, Chin-Hsiang Liao, Jer-Chyi Wang, and Chao-Sung Lai, “Reliability Enhancement of the Gadolinium Oxide Nanocrystal Nonvolatile Memory with Remote NH3 Plasma Treatment,” International Conference on Materials for Advanced Technologies (ICMAT), June 30-July 5, 2013.

53.Chia-Hsin Chen, Hsiang-Yu Liu, Jer-Chyi Wang, Chao-Sung Lai, and Hsin-Chung Lu, “Zero Interface Dipole Induced Threshold Voltage Shift of HfO2/SiO2 Gate Dielectric Stacks With NH3 Plasma Treatment,” Conference on “Insulating Films on Semiconductors” (INFOS), June 25-28, 2013.

54.Jer-Chyi Wang, Hsiang-Yu Liu, Yu-Jen Lu, Rajat Subhra Karmakar, Chia-Ming Yang, Chao-Sung Lai, Wei-Lun Zou, Mu-Yi Hua, Chiung-Yin Huang, and Kuo-Chen Wei, “Piezoresistive Characteristics of PEDOT:PSSA Strain Sensor with Gold Nanoparticles on Flexible ITO/PET Substrate,” 8th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics (TOEO-8), May 13-15, 2013.

55.Jer-Chyi Wang, Chih-Ting Lin, Po-Wei Huang, Li-Chun Chang, and Chao-Sung Lai, “Multilevel Ultra-Fast and Disturb-Free Flash Memory with Double Embedded Au and Gd2O3 Nanocrystals,” IEEE International Symposium on VLSI Technology, System & Application (VLSI-TSA), April 22-24, 2013. (EI)

56.Jer-Chyi Wang, Chao-Sung Lai, De-Yuan Jian, and Yu-Ren Ye, “Yield Improvement of Gadolinium Oxide Resistive Switching Memory with Oxygen Post-Metallization Annealing,” The 2nd IEEE International Symposium on Next-Generation Electronics (IEEE ISNE 2013), Feb. 25-26, 2013. (EI)

57.Chia-Ming Yang, Jer-Chyi Wang, Tzu-Wen Chiang, Yi-Ting Lin, Teng-Wei Juan, Tsung-Cheng Chen, Ming-Yang Shih, Cheng-En Lue, and Chao-Sung Lai, “Nano-IGZO Layer for EGFET in pH Sensing Characteristics,” 2013 5th IEEE International NanoElectronics Conference (IEEE INEC), Jan. 2-4, 2013. (EI)

58.Chih-Ting Lin, Chi-Feng Chang, Chin-Hsiang Liao, Po-Wei Huang, and Jer-Chyi Wang, “High Performance Gadolinium Oxide Nanocrystal Memory with Optimized Charge Storage and Blocking Dielectric Thickness,” 2013 5th IEEE International NanoElectronics Conference (IEEE INEC), Jan. 2-4, 2013. (EI)

59.Yu-Ren Ye, Ying-Huei Wu, Jer-Chyi Wang, and Chao-Sung Lai, “Robust Nitrogen Plasma Immersion Ion Implantation Treatment on Gadolinium Oxide Resistive Switching Random Access Memory,” 2013 5th IEEE International NanoElectronics Conference (IEEE INEC), Jan. 2-4, 2013. (EI)

60.Fang Yuan, Yu-Ren Ye, Jer-Chyi Wang, Zhigang Zhang, Liyang Pan, Jun Xu, and Chao-Sung Lai, “Retention Behavior of Graphene Oxide Resistive Switching Memory on Flexible Substrate,” 2013 5th IEEE International NanoElectronics Conference (IEEE INEC), Jan. 2-4, 2013. (EI)

61.Chao-Sung Lai, Chih-Ting Lin, Jer-Chyi Wang, and Chu-Fa Chan, “Energy-band engineering and characterization improvements by fluorine incorporation on Gd2O3 nanocrystal memory,” 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Oct. 29-Nov. 1, 2012. (EI)

62.Yu-Hsuan Lin, Jer-Chyi Wang, Chao-Sung Lai, and Yu-Ren Ye, “The Effect of Ion Sensor Treated by Nitrogen Plasma Immersion Ion Implantation Technique,” International Electron Device and Materials Symposium (IEDMS), Nov. 29-30, 2012.

63.Chih-Hsien Hsu, Jer-Chyi Wang, Yu-Ren Ye, and Chao-Sung Lai, “High Yield and Low Voltage operation Gadolinium Oxide RRAM by Hydrogen Plasma Ion Immersion Implantation Technique,” International Electron Device and Materials Symposium (IEDMS), Nov. 29-30, 2012.

64.Hsiang-Yu Liu, Jer-Chyi Wang, Chia-Hsin Chen, and Hsin-Chung Lu, “Robust Ammonia Plasma Treatment Technique for Zero Dipole Formation at HfO2/SiO2 Interface,” Asia-Pacific Conference on Plasma Science and Technology (APCPST) and Symposium of Plasma Science for Materials (SPSM), Oct. 2-5, 2012.

65.Jer-Chyi Wang, Hsiang-Yu Liu, Wei-Cheng Chang, Chao-Sung Lai, Li-Chun Chang, Chi-Fong Ai, and Wen-Fa Tsai, “Retention Amelioration of Oxygen Plasma Immersion Ion Implantation Treated Tungsten Nanocrystal Nonvolatile Memory,” Asia-Pacific Conference on Plasma Science and Technology (APCPST) and Symposium of Plasma Science for Materials (SPSM), Oct. 2-5, 2012.

66.Yu-Ren Ye, Jer-Chyi Wang, Jhih-Sian Syu, Pin-Ru Wu, Chao-Sung Lai, Chih-I Wu, and Po-Sheng Wang, “Low Power and Highly Reliable Gadolinium Oxide Resistive Switching Memory with Remote NH3 Plasma Treatment,” Solid State Devices and Materials (SSDM), Sept. 25-27, 2012.

67.Chih-Ting Lin, Po-Wei Huang, Jer-Chyi Wang, Li-Chun Chang, Chia-Hsin Chen, Yu-Yen Chen, and Chao-Sung Lai, “Performance Revelation and Optimization of Gold Nanocrystal for Future Nonvolatile Memory Application,” Solid State Devices and Materials (SSDM), Sept. 25-27, 2012.

68.Jer-Chyi Wang, Chia-Hsin Chen, Chih-Ting Lin, Po-Wei Huang, Yu-Yen Chen, and Chao-Sung Lai, “Multiple High-k Tunneling Layers for High Performance Gd2O3 Nanocrystal Memory Application,” 6th International Conference on Technological Advances of Thin Films & Surface Coatings (ThinFilms2012), July 14-17, 2012.

69.Jer-Chyi Wang, Yu-Ren Ye, Chao-Sung Lai, De-Yuan Jian, Wei-Ping Lee, Li-Chun Chang, Hsin-Chun Lu, Chih-I Wu, and Po-Sheng Wang, “Highly Reliable Gadolinium Oxide Resistive Switching Memory with Pt-Al Alloy Electrode and Optimized Post-Metallization Annealing,” 6th International Conference on Technological Advances of Thin Films & Surface Coatings (ThinFilms2012), July 14-17, 2012.

70.Tseng-Fu Lu, Kuan-I Ho, Dorota G. Pijanowska, Bohdan Jaroszewicz, Michal Zaborowski, Chia-Ming Yang, Jer-Chyi Wang, and Chao-Sung Lai, “Fluorinated-HfO2 ISFET as pK sensor with highly sensitivity,” 14th International Meeting on Chemical Sensors (IMCS 2012), May 20-23, 2012.

71.Pei-Wen Liao, Sheng-Hui Tsai, Cheng-En Lue, Kuan-I Ho, Jer-Chyi Wang, Hsin-Chih Lai, and Chao-Sung Lai, “High Polarization HfO2 Sensing on K+ for Inflammasome Cell Detection Application,” 14th International Meeting on Chemical Sensors (IMCS 2012), May 20-23, 2012.

72.Tseng-Fu Lu, I-Shun Wang, Wen-Yu Chung, Dorota G. Pijanowska, Chia-Ming Yang, Jer-Chyi Wang, and Chao-Sung Lai, “Atomic layer deposition hafnium oxide film on electrolyte-insulator-semiconductor structure for urea sensor application,” International Electron Device and Materials Symposium (IEDMS), Nov. 17-18, 2011.

73.Chia-Hsin Chen, Chin-Hsiang Liao, Chih-Ting Lin, Jer-Chyi Wang, Po-Wei Huang, and Chao-Sung Lai, “Effects of HfO2 Trapping Layer in Gd2O3 Nanocrystal Nonvolatile Memory with Multi-tunneling Layers,” 2011 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Nov. 17-18, 2011. (EI)

74.Chao-Sung Lai, Tseng-Fu Lu, and Jer-Chyi Wang, “Novel flash ion sensitive field effect transistor for chemical sensor applications,“ 2011 IEEE 9th International Conference on ASIC (ASICON), Oct. 25-28, 2011. (EI)

75.I-Shun Wang, Wen-Yu Chung, Tseng-Fu Lu, Hao-Chun Chuang, Cheng-En Lue, Chia-Ming Yang, Dorota G. Pijanswska, Jer-Chyi Wang, and Chao-Sung Lai, “Urea Biosensor with Nitrited-ALD-HfO2 Membrane by Remote NH3 Plasma Based on EIS Structure,” 2nd International Conference on Bio-Sensing Technology, Oct. 10-12, 2011.

76.Jer-Chyi Wang, Chih-Ting Lin, Chia-Hsin Chen, Chao-Sung Lai and Po-Wei Huang, “Novel Gadolinium Oxide Nanocrystal with Hafnium Oxide Trapping Layer Nonvolatile Memory Using Al2O3/SiO2 Dual Tunneling Layer,” Solid State Devices and Materials (SSDM), Sept. 28-30, 2011.

77.Jer Chyi Wang, Chih Ting Lin, Chia Hsin Chen, Po Wei Huang, and Chin Hsiang Liao, “Charge Storage and Data Retention Characteristics for the Forming Gas Annealed Gd2O3-Nanocrystal Nonvolatile Memory,” International Conference on Materials for Advanced Technologies (ICMAT), June 26-July 1, 2011.

78.I-Shun Wang, Wen-Yu Chung, Tseng-Fu Lu, Cheng-En Lue, Polung Yang, Dorota G. Pijanswska, Yi-Ting Lin, Chia-Ming Yang, Jer-Chyi Wang, Jau-Song Yu, Yu-Sun Chang, and Chao-Sung Lai, “Amine Group Formation and Bio-applications on ALD HfO2 with Nitridation by NH3 Plasma,” 2011 4th IEEE International NanoElectronics Conference (IEEE INEC), June 21-24, 2011.

79.Chih-Ting Lin, Chia-Hsin Chen, Po-Wei Huang, Jer-Chyi Wang, Chao-Sung Lai, Chi-Fong Ai, and Wen-Fu Tsai, “Al2O3/HfO2/Al2O3 (AHA) Tunneling Layer for High Performance Gd2O3 Nanocrystal Nonvolatile Memory Application,” 2011 4th IEEE International NanoElectronics Conference (IEEE INEC), June 21-24, 2011.

80.Yi-Kai Liao, Pai-Chi Chou, Jer-Chyi Wang, Chao-Sung Lai, Li-Chun Chang, Chi-Fong Ai, and Wen-Fu Tsai, “Robust Plasma Immersion Ion Implantation (PIII) Treatment on Tungsten Metal Nanocrystal Nonvolatile Memory,” 2011 4th IEEE International NanoElectronics Conference (IEEE INEC), June 21-24, 2011.

81.Kuan-I Ho, Tseng-Fu Lu, Meng-Cin Su, Jer-Chyi Wang, Chia-Ming Yang, Pijanswska, D.G., and Chao-Sung Lai, “Highly sensitivity of potassium ion detection realized on fluorinated-HfO2 by fluorine implantation on EIS,” Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International, June 5-9, 2011. (EI)

82.Jung-Hsiang Yang, Tseng-Fu Lu, Jer-Chyi Wang, Pijanswska, D.G., Chi-Hang Chin, Cheng-En Lue, Chia-Ming Yang, and Chao-Sung Lai, “Functionalization of nanoscaled 2 nm-thick ALD-HfO2 layer by rapid thermal annealing and CF4 plasma for LAPS NH4+ detection,” Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International, June 5-9, 2011. (EI)

83.Hao-Chun Chuang, Tseng-Fu Lu, Jer-Chyi Wang, Chia-Ming Yang, and Chao-Sung Lai, “Thickness Effect and Rapid Thermal Annealing Treatment of Single Atomic Layer Deposition HfO2 Layer on EIS for pH Sensor Application,” 2011 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF-11), Jan. 20-21, 2011.

84.Tseng-Fu Lu, Jer-Chyi Wang, Hui-Yu Shih, Chia-Ming Yang, Chieh-Hung Chuang, Chao-Sung Lai, Chyuan-Haur Kao, and Tung-Ming Pan, “pH-sensing Characterization of Programmable Sm2O3/Si3N4/SiO2/Si EIS Sensor with Rapid Thermal Annealing,” 2011 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF-11), Jan. 20-21, 2011.

85.Yu-Ren Ye, Jer-Chyi Wang, and Chao-Sung Lai, “Improved Switching Properties of Gadolinium Oxide ReRAM by CF4 Plasma Treatment,” 2011 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF-11), Jan. 20-21, 2011.

86.Chih-Ting Lin, Jer-Chyi Wang, Chao-Sung Lai, Yong-Jin Joung, and Kuan-Ting Chen, “Effects of Ammonia Plasma Treatment and Post Plasma Annealing on Gd2O3 Nanocrystal Memory,” International Electron Device and Materials Symposium (IEDMS), 2010.

87.Yu-Ren Ye, Jer-Chyi Wang, and Chao-Sung Lai, I-Ting Wang, and Yu-Hsuan Lin, “Influence of Switching Property for Gd2O3 ReRAM by NH3 Plasma Treatment,” International Electron Device and Materials Symposium (IEDMS), 2010.

88.Huai-Hsien Chiu, Chao-Sung Lai, and Jer-Chyi Wang, “Fermi-level Pinning and NBTI Free of CMOS HfO2 by Pre-CF4 Plasma Passivation,” Solid State Devices and Materials (SSDM), 2010.

89.Hui-Yu Shih, Jer-Chyi Wang, Tseng-Fu Lu, Chao-Sung Lai, Chyuan-Haur Kao and Tung-Ming Pan, “Novel Reference Electrode-Insulator-Nitride-Oxide- Semiconductor (RINOS) Structure with Sm2O3 Sensing Membrane for pH-sensor application,” Solid State Devices and Materials (SSDM), 2010.

90.Pai-Chi Chou, Jer-Chyi Wang, Chao-Sung Lai, Jer-Yi Lin, Wei-Cheng Chang, Kuan-Ting Chen, Yung-Chin Chung, Yu-Hsuan Lin, I-Ting Wang, Chih-I Wu, and Po-Sheng Wang, “Robust Ultra-violet (UV) Analysis Technique for Band Diagram Extraction of Al/HfGdO/SiO2/p-Si Structure with Different Hf/Gd Dual-sputtered Ratio,” Solid State Devices and Materials (SSDM), 2010.

91.Chao-Sung Lai, Woei-Cherng Wu, Huai-Hsien Chiu, Jer-Chyi Wang, Pai-Chi Chou, and Tien-Sheng Chao, “Improvements of Fermi-level pinning and NBTI by fluorinated HfO2-CMOS,” 2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), pp. 1-4, 2010. (EI)

92.Woei-Cherng Wu, Chao-Sung Lai, Huai-Hsien Chiu, Jer-Chyi Wang, Pai-Chi Chou, and Tien-Sheng Chao, “Fluorinated CMOS HfO2 for High Performance (HP) and Low Stand-by Power (LSTP) application by pre- and post-CF4 Plasma Passivation,” 40th European Solid-State Device Research Conference (ESSDERC), 2010. (EI)

93.Chih-Ting Lin, Jer-Chyi Wang, Chao-Sung Lai, Jui-Lin Hsu, and Chi-Fong Ai, “CF4 Plasma Treatment on Gd2O3 Nanocrystal Memory for High Performance Nonvolatile Memory Application,” 217th Electrochemical Society (ECS) Meeting, 2010.

94.Yu-Ren Ye, Jer-Chyi Wang, and Chao-Sung Lai, “Improved Resistive Switching Performance of Gd2O3 Films by Fluorine Incorporation and Gd/O Ratio Adjustment,” 217th Electrochemical Society (ECS) Meeting, 2010.

95.Tseng-Fu Lu, Jer-Chyi Wang, Chao-Sung Lai, Chia-Ming Yang, Min-Hsien Wu, Chuan-Pu Liu, Rong-Shie Huang, and Yu-Ching Fang, “A Novel Flash-Ion-Sensitive Field-Effect Transistor (FISFET) with HfO2/Gd2O3(Gd) Nano-crystal/SiO2 Sensing Membranes under Super Nernstian Phenomenon for pH and Urea Detection,” IEEE International Electron Devices Meeting (IEDM), Technical Digest., pp. 603-606, 2009. (EI)

96.Pai-Chi Chou, Jer-Chyi Wang, Woei-Cherng Wu and Chao-Sung Lai, “Improved Dielectric Phase and Interfacial Dipole Control of Gd2O3-doped HfO2 Gate Dielectrics by Co-sputtering Technique,” 2009 Materials Research Society (MRS) Fall Meeting, 2009.

97.Huai-Hsien Chiu, Jer-Chyi Wang, Chao-Sung Lai, Woei-Cherng Wu, and Tien-Sheng Chao, “Interfacial Reaction Suppression of Gate First CMOS HfO2 Achieve Zero Interfacial Layer by Pre-CF4 Plasma Passivation,” International Electron Device and Materials Symposium (IEDMS), 2009.

98.Chih-Ting Lin, Jer-Chyi Wang, Chao-Sung Lai, Jui-Lin Hsu, and Chi-Fong Ai, “Improved Characteristics of Gd2O3 Nanocrystal Memory with Substrate High-Low Jinction Induced Band-to-Band (BTBT) Electron Injection,” International Electron Device and Materials Symposium (IEDMS), 2009.

99.Pai-Chi Chou, Jer-Chyi Wang, Chao-Sung Lai, and Li-Chi Liu, “Process Optimization of Dual-sputtered HfGdO Charge Trapping Layer in SONOS-Type Nonvolatile Memory,” International Electron Device and Materials Symposium (IEDMS), 2009.

100. Pai-Chi Chou, Jer-Chyi Wang, Chao-Sung Lai, “Characteristics Improvement of N2O Annealing on Tungsten Nanocrystal Memory with W/Si Dual-Sputtering Method,” International Electron Device and Materials Symposium (IEDMS), 2009.

101. Woei-Cherng Wu, Tien-Sheng Chao, Kuan-Ti Wang, Shih-Ching Lee, Te-Hsin Chiu, Tsung-Yi Lu, Chao-Sung Lai, Jer-Chyi Wang, Ming-Wen Ma, Kuo-Hsing Kao and Wen-Cheng Lo, “Novel Dynamic Threshold Voltage Contact Etching Stop Layer (DT-CESL) Strained HfO2 nMOSFET for Very Low Voltage Operation (0.7V),” Solid State Devices and Materials (SSDM), 2009.

102. Hsing-Kan Peng, Chao-Sung Lai and Jer-Chyi Wang, “Threshold Voltage (Vth) Tunability of pMOSFETs with Ternary HfxMoyNz Metal Gate and Gd2O3 High-k Gate Dielectric,” Solid State Devices and Materials (SSDM), 2009.

103. Woei-Cherng Wu, Chao-Sung Lai, Shih-Ching Lee, Ming-Wen Ma, Tien-Sheng Chao, Jer-Chyi Wang, Chih-Wei Hsu, Pai-Chi Chou, Jian-Hao Chen, Kuo-Hsing Kao, Wen-Cheng Lo, Tsung-Yi Lu, Li-Lin Tay, and Nelson Rowell, “Fluorinated HfO2 Gate Dielectrics Engineering for CMOS by pre- and post-CF4 Plasma Passivation,” IEEE International Electron Devices Meeting (IEDM), Technical Digest., pp. 405-408, 2008. (EI) 

104. Woei-Cherng Wu, Tien-Sheng Chao, Te-Hsin Chiu, Chao-Sung Lai, Jer-Chyi Wang, Ming-Wen Ma, and Wen-Cheng Lo, “New Observation on PBTI Characteristics of Contact Etching Stop Layer (CESL) Induced Tensile Strained HfO2 nMOSFET,” Solid State Devices and Materials (SSDM), 2008.

105. Yu-Kai Chen, Chao-Sung Lai, Jer-Chyi Wang, Pai-Chi Chou, Chih-Ting Lin, Yu-Ching Fang, Li Hsu, Chuan-Pu Liu, and R. S. Huang, “Temperature Effects on Recrystallization and Improvements of Pure Gadolinium (Gd) Nanocrystal (NC) for Flash Memory,” Solid State Devices and Materials (SSDM), 2008.

106. Woei-Cherng Wu, Tien-Sheng Chao, Te-Hsin Chiu, Jer-Chyi Wang, Chao-Sung Lai, Ming-Wen Ma, Wen-Cheng Lo, and Yi-Hsun Ho, “Performance Enhancement for Strained HfO2 nMOSFET with Contact Etch Stop Layer (CESL) under Pulsed-IV Measurement,” IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), 2007. (EI)

107. Woei-Cherng Wu, Chao-Sung Lai, Zhu Ming Wang, Jer-Chyi Wang, Ming Wen Ma, and Tien-Sheng Chao, “Current Transportation Mechanism for HfO2 with Silicon Surface Fluorine Implantation (SSFI) in CMOS Application,” Solid State Devices and Materials (SSDM), 2007.

108. Woei-Cherng Wu, Tien-Sheng Chao, Wu-Ching Peng, Wen-Luh Yang, Jer-Chyi Wang, Jian-Hao Chen, Chao-Sung Lai, and Tsung-Yu Yang, “A Highly Reliable multi-level and 2-bits/cell operation of Wrapped-Select-Gate SONOS memory with Optimized ONO Thickness,” IEEE International Symposium on VLSI Technology, System & Application (VLSI-TSA), April 23-25, 2007. (EI)

109. Chao-Sung Lai, Jer Chyi Wang, S. C. Yang, J. Y. Wong, and Shing Kan Peng, “Nitrogen Induced Extrinsic States (NIES) in Effective Work Function Instability of TiNx/SiO2 and TiNx/HfO2 Gate Stacks,” Solid State Devices and Materials (SSDM), pp. 438-439, 2006.

110. Woei-Cherng Wu, Chao-Sung Lai, Kuan Ti Wang, Jer Chyi Wang and Tien-Sheng Chao, “Current Transportation Mechanism and Interface States Characterization of Sputtered Gd2O3 Gate Dielectrics for ULSI Application,” Solid State Devices and Materials (SSDM), pp. 1100-1101, 2006.

111. Tung-Ming Pan, Chao-Sung Lai, Hui-Hsin Hsu, Jer-Chyi Wang, Kuan-Di Wang, Chun-Lin Chen, Jian-Chi Lin, and Jian-Der Lee, “The Electrical Characteristics of Thin Gadolinium Oxide Films on Silicon Substrate by DC Reactive RF-sputtering,” IEEE Int. Semiconductor Device Research Symposium, pp. 132-133, 2005. (EI)

112. Chao Sung Lai, Shing Kan Peng, Jer Chyi Wang, Tung Ming Pan, Kung Ming Fan, and Jian Yi Wong, “Work Function Adjustment by Nitrogen Incorporation in HfN Gate Electrode,” Solid State Devices and Materials (SSDM), pp. 510-511, 2005.

113. Chao Sung Lai, Woei Cherng Wu, Jer Chyi Wang, and Tian Sheng Chao, “Thermal Stability Improvements for HfO2 by Fluorine Implantation,” Solid State Devices and Materials (SSDM), pp. 234-235, 2005.

114. Jer Chyi Wang, Woei Cherng Wu, Chao Sung Lai, Jam Wem Lee, Kuo Cheng Chiang, De Ching Shie, Tan Fu Lei, and Chung Len Lee, “Characterization of Novel HfTiO Gate Dielectrics Post-treated by NH3 Plasma and Ultra-violet Rays,” Solid State Devices and Materials (SSDM), pp. 242-243, 2005.

115. Chao Sung Lai, Woei Cherng Wu, Kung Ming Fan, Jer Chyi Wang, and Shian-Jyh Lin, “Hysteresis Phenomenon Improvements of HfO2 by CF4 Plasma Treatment,” Solid State Devices and Materials (SSDM), pp. 742-743, 2004.

116. Jer Chyi Wang, Kuo Cheng Chiang, Tan Fu Lei, and Chung Len Lee, “Characteristics Improvement and Carrier Transportation of CeO2 Gate Dielectrics with Rapid Thermal Annealing,” 11th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2004), pp. 161-164, 2004. (EI)

117. Kuo Cheng Chiang, Jer Chyi Wang, and Tan Fu Lei, “Improved Characteristics of Ultra-Thin Cerium Dioxide with Rapid Thermal Annealing,” 4th WSEAS International Conference on NANOELECTRONICS and NANOTECHNOLOGY (ICONN 2004), 2004.

118. Jer Chyi Wang, De Ching Shie, Tan Fu Lei, and Chung Len Lee, “Characterization of Soft Breakdown Effects for Post-deposition NH3 Plasma Treated HfO2 Gate Dielectrics,” Solid State Devices and Materials (SSDM), pp. 706-707, 2003.

119. Jer Chyi Wang, Jam Wem Lee, Tan Fu Lei, and Chung Len Lee, “A Novel Post N2O Plasma Treatment Approach on Ultra-thin CeO2 Gate Dielectrics,” 22nd European Conference on Surface Science (ECOSS), 2003.

120. J. C. Wang, J. W. Lee, T. F. Lei, and C. L. Lee, “High Reliability Ultra-Thin Interpoly-Oxynitride Dielectrics Prepared by N2O Plasma Annealing,” World Scientific and Engineering Academy and Society (WESAS), pp. 457-232, 2003.

121. J. C. Wang, D. C. Shie, T. F. Lei, and C. L. Lee, “Novel Turnaround Characteristics of Hysteresis for HfO2 Gate Dielectrics Using Post-deposition NH3 Plasma Treatment,” Eleventh Canadian Semiconductor Technology Conference (CSTC), pp. TP.51, 2003.

122. Jer Chyi Wang, De Ching Shie, Tan Fu Lei, Chung Len Lee, Yiming Li, and Jam Wem Lee, “A Post NH3 Plasma Treatment Approach to the Characterization of Hysteresis for Nanoscale HfO2 Gate Dielectrics,” Silicon Nanoelectronics Workshop (SNW), pp. 120-121, 2003.

123. Jer Chyi Wang, Yu Hsien Lin, Yen Ping Hung, Tan Fu Lei, and Chung Len Lee, “Characteristics of Ultra-Thin Cerium Dielectrics with Surface Nitridation Pretreatment and Post Furnace Annealing,” International Electron Device and Materials Symposium (IEDMS), pp. 98-101, 2002.

124. Jer Chyi Wang, Tan Fu Lei, and Chung Len Lee, “The Effects of Furnace or Rapid Thermal Annealing on Thin Silicon Nitride Dielectrics,” International Electron Device and Materials Symposium (IEDMS), Symposium A, pp. 105-108, 2000.

1.賴朝松、王哲麒、葉毓仁, “電阻式感測陣列裝置,” 中華民國專利, 專利號碼: I561815, 公告日: 2016/12/11, 專利期限: 2016/02/04~2036/02/03。

2.王哲麒、邱俊翔、陳韋帆, “具有多重電阻態的電阻式記憶體,” 中華民國專利, 專利號碼: I559305, 公告日: 2016/11/21, 專利期限: 2015/08/07~2035/08/06。

3.王哲麒、賴朝松、詹雅庭, “電阻式記憶體裝置,” 中華民國專利, 專利號碼: I552152, 公告日: 2016/10/01, 專利期限: 2015/05/11~2035/05/10。

4.Chien-Chi Lee, Chia-Ming Yang, Wei-Ping Lee, Hsin-Huei Chen, Chih-Yuan Hsiao, Ping Kao, Kai-Lun Chiang, Chao-Sung Lai, Jer-Chyi Wang, “Memory cell having a recessed gate and manufacturing method thereof,” US patent, patent no.: US9105505, date of patent: 2015/08/11, term: 2013/09/12~2033/09/11.

5.李建錡、楊家銘、李偉平、陳昕輝、蕭智元、高平、江凱崙、賴朝松、王哲麒, “具有凹入式閘極結構之記憶體單元及其製作方法,” 中華民國專利, 專利號碼: I538023, 公告日: 2016/06/11, 專利期限: 2013/04/17~2033/04/16。

6.賴朝松、魏國珍、王哲麒、華沐怡、盧郁仁、黃瓊瑩、蘇聖凱, “體內手術用之壓力監測系統,” 中華民國專利, 專利號碼: I536950, 公告日: 2016/06/11, 專利期限: 2012/07/06~2032/07/05。

7.賴朝松、王哲麒、葉毓仁, “電阻式記憶體感測元件,” 中華民國專利, 專利號碼: I517466, 公告日: 2016/01/11, 專利期限: 2013/04/12~2033/04/11。

8.林致廷、王哲麒、賴朝松、詹聚法, “分離式石墨烯奈米碟電荷儲存層的製造方法與應用之記憶體元件,” 中華民國專利, 專利號碼: I499555, 公告日: 2015/09/11, 專利期限: 2012/08/15~2032/08/14。

9.賴朝松、王哲麒、鄒百騏, “一種形成具有穩定臨限電壓之電晶體的方法,” 中華民國專利, 專利號碼: I487037, 公告日: 2015/06/01, 專利期限: 2012/03/02~2032/03/01。

10.賴朝松、華沐怡、蘇聖凱、陳世亮、楊家銘、王哲麒、阮騰緯, “離子感測裝置及其製作方法,” 中華民國專利, 專利號碼: I479146, 公告日: 2015/04/01, 專利期限: 2013/03/13~2033/03/12。

11.賴朝松、王哲麒、石清堉, “一種透明導電薄膜之表面處理方法及其結構,” 中華民國專利, 專利號碼: I420542, 公告日: 2012/12/21, 專利期限: 2010/10/29~2030/10/28。

12.廖偉明、王哲麒, “２ビットＵ字型メモリ構造及びその製作方法,” 日本專利, 專利號碼: P5066031, 公告日: 2012/08/07, 專利期限: 2008/08/20~2028/08/19。

13.王哲麒、廖偉明, “凹入式通道電晶體結構,” 中華民國專利, 專利號碼: I368314, 公告日: 2012/07/11, 專利期限: 2008/04/25~2028/04/24。

14.王哲麒、吳鐵將、李中元、林正平、李仲仁、江昱德, “凹入式閘極電晶體元件結構及製作方法,” 中華民國專利, 專利號碼: I368324, 公告日: 2012/07/11, 專利期限: 2008/05/12~2028/05/11。

15.廖偉明、王哲麒, “一種雙位元Ｕ型記憶體結構及其製作方法,” 中華民國專利, 專利號碼: I355087, 公告日: 2011/12/21, 專利期限: 2008/04/10~2028/04/09。

16.林裕章、王哲麒, “外擴散抑制的半導體裝置之製造方法,” 中華民國專利, 專利號碼: I351737, 公告日: 2011/11/01, 專利期限: 2007/06/27~2027/06/26。

17.張明成、廖偉明、王哲麒、張伊鋒, “二位元式快閃記憶體,” 中華民國專利, 專利號碼: I351767, 公告日: 2011/11/01, 專利期限: 2007/10/02~2027/10/01。

18.王茂盈、王哲麒、徐薇惠、周良賓、蘇國輝、吳昌榮、賴朝松, “半導體裝置的製造方法,” 中華民國專利, 專利號碼: I349310, 公告日: 2011/09/21, 專利期限: 2007/07/09~2027/07/08。

19.Jer-Chyi Wang, Tieh-Chiang Wu, Chung-Yuan Lee, Jeng- Ping Lin, “Two-bit flash memory,” US patent, patent no.: US7994559, date of patent: 2011/08/09, term: 2008/07/02~2028/07/01.

20.Ming-Cheng Chang, Wei-Ming Liao, Jer-Chyi Wang, Yi-Feng Chang, “Two-bit flash memory,” US patent, patent no.: US7956403, date of patent: 2011/06/07, term: 2008/04/08~2028/04/07.

21.王哲麒、吳鐵將、李中元、林正平, “凹入式栅极晶体管元件结构及制作方法,”中國專利, 專利號碼: CN101452957, 公告日: 2011/05/04, 專利期限: 2007/11/30~2027/11/29。

22.張明成、廖偉明、王哲麒、黃建章, “闪存,” 中國專利, 專利號碼: CN101442075, 公告日: 2011/03/16, 專利期限: 2007/11/21~2027/11/20。

23.廖偉明、王哲麒, “双位U型存储器结构及其制作方法,” 中國專利, 專利號碼: CN101582454, 公告日: 2011/03/16, 專利期限: 2008/05/16~2028/05/15。

24.廖偉明、張明成、王哲麒, “雙位元快閃記憶體胞結構及其製作方法,” 中華民國專利, 專利號碼: I340436, 公告日: 2011/04/11, 專利期限: 2007/07/18~2027/07/17。

25.王哲麒、廖偉明, “凹入式沟道晶体管结构,” 中國專利, 專利號碼: CN101587908, 公告日: 2010/11/17, 專利期限: 2008/05/23~2028/05/22。