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長庚大學 電子工程學系
勤勞樸實 追求卓越
分類清單
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麥凱教授
  • 麥凱

Dr. Siddheswar Maikap (麥凱)

Professor

Group: Nano-Electronics and Devices

Tel: 5785

E-mail: sidhu@mail.cgu.edu.tw

LAB: Thin Film Nano Tech. Lab (E0809)

 

Educations:

1.     Ph.D., Indian Institute of Technology, Kharagpur, India (1998/01~2003/02)

2.     M. Sc., Vidyasagar University, Midnapore, West Bengal, India (1993-1995)

 

Experiences:

1.   Professor, Department of Electronic Engineering, Chang Gung University, Taiwan, R.O.C. (2014/12-till date)

2.     Associate Professor, Department of Electronic Engineering, Chang Gung University, Taiwan, R.O.C. (2009/08-2014/11)

3.     Assistant Professor, Department of Electronic Engineering, Chang Gung University, Taiwan, R.O.C. (2006/06-2009/07)

4.     Engineer, Electronics and Opto-Electronics Research Lab., Industrial Technology Research Institute, Hsinchu, Taiwan, R.O.C. (2004/08-2006/06)

5.     Postdoc,  Department of Electrical Engineering, National Taiwan University, Taiwan, R.O.C. (2003/02-2004/07)

6.     Researcher, Center for Microstructure Science of Materials, Seoul National University, South Korea (2001/09-2002/12)

7.     Research Assistant, Indian Institute of Technology, Kharagpur, India (1995~1997/12)

 

Courses:

              Solid-State Device Physics

              Advanced Memory Devices

              Nanoscale Device Physics

              Nanostructure Materials and Nanotechnology

              Fundamentals of Complex Analysis

              Introduction to Engineering

              High-k Gate Dielectrics and Its Applications

              Basic Electronic Circuit Experimental

 

Specializations:

  Flash and Resistive Switching Memory Devices

  Biosensor Devices

  High-k Dielectrics

  Nanocrystals

  Si and Ge nanowire Devices

 

Biography:

  S. Maikap was born in Contai, Midnapore, West Bengal, India on 28th October, 1968. He received the Ph. D degree in Physics & Meteorology, Indian Institute of Technology (IIT), Kharagpur, India, in Feb. 2003. He developed low temperature oxides on strained SeGe layers for high mobility MOSFET applications. He received the B. Sc. (Contai P. K. College) and M. Sc. degrees in Physics from the Vidyasagar University, West Bengal, India, in 1993 and 1995, respectively. He focused in his M. Sc. thesis on electronic transport through multi-level quantum wells. He was a Research Assistant in Cryogenic Engineering and Department of Electrical and Electronic Communication Engineering, IIT, Kharagpur, from 1995 to 1997. He developed low temperature polymer material thermal conductivity and metal-oxide-semiconductor capacitors. From 2001 to 2002, he was a Researcher in Center for Microstructure Science of Materials, Seoul National University, South Korea. In this period 2001-2002, his research topic was Cu charged cluster formation in physical vapor deposition. He has developed also Ge nanocrystal for flash memory and high-k gate dielectrics on strained SiGe layers for nanoscal high mobility MOSFET applications. From 2003 to July 2004, he was working as a Post-doctoral Fellow with the Department of Electrical Engineering, National Taiwan University, Taiwan. He developed strained Si CMOS in EOL/ITRI, Hsinchu, Taiwan. He was an Engineer in EOL/ITRI, Hsinchu, Taiwan from 2004-2006. He developed Atomic Layer Deposited (ALD) metal nanocrystal, high-k multi-layers for high-performance flash memory applications. He joined as an Assistant Professor in Department of Electronic Engineering, Chang Gung University, Tao-Yuan since July 2006. He was an Professor in the same University from 2014-till date. His current research interests include the fabrication and characterization of nanoscale nonvolatile memory devices and Biosensors .

 

 

 

International Journal Papers:

1.      S. Maikap, L. K. Bera, S. K. Ray and C. K. Maiti, “NO/O2/NO plasma grown oxynitride films on strained-Si1-xGex”,  Electron. Lett., vol. 35, pp. 1202-1203, 1999. (SCI Impact Factor=1.004)

2.      S. Maikap, L. K. Bera, S. K. Ray, S. John, S. K. Banerjee and C. K. Maiti, “Electrical  characterization of Si/ Si1-xGex/Si quantum well heterostuctures using a MOS capacitor”, Solid-State. Electron., vol. 44, pp. 1029-1034, 2000. (SCI Impact Factor=1.440)

3.      S. Maikap, S. K. Ray, S. John, S. K. Banerjee and C. K. Maiti, “Electrical characterization of   ultrathin gate oxides on Si/SiGeC/Si quantum well heterostructures”, Semicond. Sci. Technol.,   vol. 15, pp. 761-765, 2000. (SCI Impact Factor= 1.333)

4.      L. K. Bera, B. Senapati, S. Maikap and C. K. Maiti, “Effects of O2/N2O-plasma treatment on nitride films on strained-Si”, Solid-State Electron., vol. 44, pp. 1533-1536, 2000. (SCI Impact Factor=1.440)

5.      B. Senapati, S. Samanta, S. Maikap, L. K. Bera and C. K. Maiti, “Effects of NO-plasma treatment on the electrical properties of TEOS-deposited silicon dioxides on strained- Si1-xGex  layers”, Appl. Phys. Lett., vol. 77, pp. 1840-1842, 2000. (SCI Impact Factor=3.841)

6.      C. K. Maiti, L. K. Bera, S. Maikap, S. K. Ray, R. Kesavan, V. Kumar and N. B. Chakrabarti, “Growth of silicon-germanium alloy layers”, Defence  Scence Journal, vol. 50, pp. 299-315, 2000. (SCI Impact Factor=0.304)

7.      G. S. Kar, S. Maikap, A. Dhar and S. K. Ray, “Schottky diode on Si/SiGeC quantum well heterostructures for long wavelength IR detector”,  Proc. of SPIE Int. Soc, Opt. Eng, vol. 4417, pp. 366-371, 2001. (SCI Impact Factor=0.754)

8.      S. Maikap, B. Senapati and C. K. Maiti, “Technology CAD of SiGe-HFETs”, Defence Science Journal, vol. 51, pp. 195-197, 2001. (SCI Impact Factor= 0.304)

9.      S. Maikap, S. K. Ray, S. K. Banerjee and C. K. Maiti, “Electrical properties of O2/NO-plasma grown oxynitride films on partially strain compensated Si/Si1-x-yGexCy/Si heterolayers”, Semicond. Sci. Technol., vol. 16, pp. 160-163, 2001. (SCI Impact Factor= 1.333)

10.  L. K. Bera, B. Senapati, S. Maikap and C. K. Maiti, “Determination of density and distribution of high-voltage stress-induced traps in O2-, NO- and NO/O2/NO-plasma grown oxides on strained Si", Solid-State Electron., vol. 45, pp. 379-383, 2001. (SCI Impact Factor=1.440)

11.  S. K. Ray, S. Maikap, S. K. Samanta, S. K. Banerjee and C. K. Maiti, “Charge trapping characteristics of ultrathin oxynitrides on Si/Si1-x-yGexCy/Si heterolayers”, Solid-State Electron., vol. 45, pp. 1951-1955, 2001. (SCI Impact Factor=1.440)

12.  S. K. Samanta, S. Maikap, L. K. Bera, H. D. Banerjee and C. K. Maiti, “Effect of post-oxidation annealing on the electrical properties of deposited oxide and oxynitride films on strained-Si0.82Ge0.18 layers”, Semicond. Sci. Technol., vol. 16, pp. 704-707, 2001. (SCI Impact Factor=1.333)

13.  G. S. Kar, S. Maikap, S. K. Ray, S. K. Banerjee and N. B. Chakrabarti, “Effective mobility and alloy scattering in strain compensated SiGeC inversion layer”, Semicond. Sci. Technol., vol. 17, pp. 471-475, 2002. (SCI Impact Factor=1.333)

14.  G. S. Kar, S. Maikap, S. K. Banerjee and S. K. Ray, “Hole velocity overshoot in partially strain compensated Si0.793Ge0.2C0.007 inversion layers”, Electron. Lett., vol. 38, pp. 141-142, 2002. (SCI Impact Factor=1.004)

15.  R. Mahapatra, S. Maikap, G. S. Kar and S. K. Ray, “Electrical properties of plasma grown gate oxides on tensile strained Si1-yCy layers”, Electron. Lett. vol. 38, pp. 1000-1001, 2002. (SCI Impact Factor=1.004)

16.  G. S. Kar, S. Maikap, S. K. Banerjee, S. K. Ray, “Series resistance and mobility degradation factor in C incorporated SiGe heterostructure p MOSFETs”, Semicond. Sci. Technol. vol. 17, pp. 938-941, 2002. (SCI Impact Factor=1.333)

17.  S. Nandi, Won-Kook Choi, Young S. Noh, Min S. Oh, S. Maikap, Nong M. Hwang, Doh-Y. Kim, S. Chatterjee, S. Samanta, and C. K. Maiti, “Investigations on Ta2O5/ZnO insulator-semiconductor interfaces”, Electron. Lett. vol. 38, pp. 1390-1392, 2002. (SCI Impact Factor=1.004)

18.  S. K. Samanta, S. Maikap, S.Chatterjee, C.K.Maiti, “Minority carrier lifetime and diffusion length in Si1-x-yGexCy  heterolayers”, Solid-State Electron. vol. 47, pp. 893-897, 2002. (SCI Impact Factor=1.440)

19.  S. Chatterjee, S. Nandi, S. Maikap, S. K. Samanta and C. K. Maiti, “Electrical properties of deposited ZrO2 films on ZnO/n-Si substrates”, Semicond. Sci. Technol, vol. 18, pp.1-5, 2003. (SCI Impact Factor=1.333)

20.  S. K. Samanta, S. Chatterjee,  S. Maikap, L. K. Bera, H. D. Banerjee and C. K. Maiti, “films grown on strained- Si1-xGex substrates”, J. Appl. Phys., vol. 93, pp. 2464-2471, 2003. (SCI Impact Factor=2.079)

21.  Y. S. Noh, S. Chatterjee, S. Nandi, S. K. Samanta, C.K. Maiti, S. Maikap, W.-K. Choi, “Characteristics of MIS capacitors using Ta2O5 films deposited on ZnO/p-Si, Microelectron. Engg. vol. 66,  pp. 637-642, 2003. (SCI Impact Factor=1.575)

22.  R. Mahapatra, Je Hun Lee, S. Maikap, G. S. Kar, A. Dhar, N. M. Hwang, D. Y. Kim, B. K. Mathur and S. K. Ray, “Electrical and interfacial characteristics of ultra-thin ZrO2 gate dielectrics on strain compensated SiGeC/Si heterostructure”, Appl. Phys. Lett.     vol. 82, pp. 2320-2322, 2003. (SCI Impact Factor=3.841)

23.  R. Mahapatra, S. Maikap, Je Hun Lee, G. S. Kar, A. Dhar,  B. K. Mathur, N. M. Hwang, D. Y. Kim and S. K. Ray, “Effects of interfacial nitrogen on the structural and electrical properties of ultra thin ZrO2 gate dielectrics on partially strain compensated SiGeC/Si heterolayers”, Appl. Phys. Lett, vol. 82, pp. 4331-4333, 2003. (SCI Impact Factor=3.841)

24.  Je-Hun Lee, S. Maikap, Doh. Y. Kim, R. Mahapatra, S. K. Ray, Y. S. Noh and W.-K. Choi, “Characteristics of ultra-thin HfO2 gate dielectrics on strained-Si0.74Ge0.26  layers”, Appl. Phys. Lett, vol. 83, pp. 779-781, 2003. (SCI Impact Factor=3.841)

25.  R. Mahapatra, S. Maikap, Je Hun Lee, G. S. Kar, A. Dhar, Doh Y. Kim, D. Bhattacharya and S. K. Ray, “Structural and electrical characteristics of the interfacial layer of ultra-thin ZrO2 films on partially strain compensated Si0.69Ge0.3C0.01 layers”, J. Vac. Sci. Technol. A, vol. 21(5), pp.1758-1764, 2003. (SCI Impact Factor=1.291)

26.  C. K. Maiti, S. Maikap, S. Chatterjee, S. K. Nandi and S. K. Samanta, “Hafnium oxide gate dielectric for strained-Si1-xGex”, Solid-State Electron, vol. 47, pp. 1995-2000, 2003. (SCI Impact Factor=1.440)

27.  K. Das, S. Maikap, A. Dhar, B. K. Mathur and S. K. Ray, “Metal-oxide-semiconductor structure with Ge nanocrystals for memory device applications”, Electron.  Lett., vol. 39, pp. 1865-1866, 2003. (SCI Impact Factor=1.004)

28.  R. Mahapatra, G. S. Kar, S. K. Ray, and S. Maikap, “Effect of temperature on the electrical properties of plasma grown oxides on Si0.993C0.007 layers”, J. Mat. Sci.: Mat. Electron, vol. 15, pp. 43-46, 2004. (SCI Impact Factor=0.927)

29.  S. K. Samanta, S Chatterjee, S. Maikap and C. K. Maiti, “Ultrathin oxynitride films on strained SiGe layers by a three-step NO/O2/NO process”, Solid-State Electron, vol. 48, pp. 91-97, 2004. (SCI Impact Factor=1.440)

30.  S. Maikap, Je Hun Lee and Doh Y. Kim, R. Mahapatra, S. K. Ray, Jae Hoon Song, Y. S. No and Won Kook Choi, “Physical and electrical properties of ultrathin HfO2/HfSixOy stacked gate dielectrics on compressively strained Si0.74Ge0.26/Si heterolayers”, J. Vac. Sci. Technol. B, vol.     B  22(1), pp. 52-56, 2004. (SCI Impact Factor=1.271)

31.  S. Maikap, C.-Y. Yu, S.-R. Jan, M. H. Lee, and C. W. Liu, “Mechanically strained strained-Si NMOSFETs,” IEEE Electron Dev. Lett., vol. 25, pp. 40-42, 2004. (SCI Impact Factor=2.719)

32.  K. Das, M. NandaGoswami, R. Mahapatra, G. S. Kar, A Dhar, H. N. Acharya, S. Maikap, Je-Hun Lee and S. K. Ray, “Charge storage and photoluminescence characteristics of  silicon oxide embedded Ge nanocrystals  trilayer structure,” Appl. Phys. Lett., vol. 84, pp. 1386-1388, 2004. (SCI Impact Factor=3.841)

33.  F. Yuan, S. R. Jan, S. Maikap, Y. H. Liu, C. S. Liang, and C. W. Liu, “ Mechanically strained  Si/SiGe HBTs”, IEEE Electron Dev. Lett., vol. 25, pp. 483-485, 2004. (SCI Impact Factor=2.719)

34.  W. C. Hua, M. H. Lee, P. S. Chen, S. Maikap, C. W. Liu and K. M. Chen, “Ge outdiffusion      effect on flicker noise in strained-Si NMOSFETs”, IEEE Electron Dev. Lett., vol. 25, pp. 693-695, 2004. (SCI Impact Factor=2.719)

35.  C. W. Liu, M. H. Lee, Y. C. Lee, P. S. Chen, C. Y. Yu, J. Y. Wei, S. Maikap, “Evidence of Si/ SiGe heterojunction roughness scattering,” Appl. Phys. Lett., vol. 85, pp. 4947-4949, 2004. (SCI Impact Factor=3.841)

36.  S. K. Ray, R. Mahapatra, S. Maikap, A. Dhar, D. Bhattacharya, and J. H. Lee, “Ultrathin HfO2 gate dielectrics on partially strain compensated SiGeC/Si heterostructure”, Materials Science in Semiconductor Processing, vol. 7, pp. 203-208, 2004. (SCI Impact Factor= 0.650)

37.  R. Mahapatra, S. Maikap, A. Dhar, B. K. Mathur, and S. K. Ray, “Characteristics of high-k ZrO2 gate dielectrics on O2/N2O plasma treated Si0.69Ge0.3C0.01/Si heterolayers”, Ferroelectrics, vol. 329, pp. 101-105, 2005. (SCI Impact Factor= 0.512)

38.  R. Mahapatra, S. Maikap, G. S. Kar and S. K. Ray, “Ultrathin oxynitride films grown on Si0.74Ge0.26/Si heterolayers using low energy plasma source nitrogen implantation”, Solid-State Electron., vol. 49, pp. 449-452, 2005. (SCI Impact Factor=1.440)

39.  S. Maikap, J. H. Lee, R. Mahapatra, S. Pal, Y. S. No, W. K. Choi, S. K. Ray, and D. Y. Kim, “Effects of interfacial NH3/N2O plasma treatment on the structural and electrical properties of ultrathin HfO2 gate dielectrics on p-Si substrates”, Solid-State Electron., vol. 49, pp. 524-528, 2005. (SCI Impact Factor=1.440)

40.  Invited review paper” C. W. Liu, S. Maikap, and C. -Y. Yu, “Mobility-enhancement technologies”, IEEE Circuits and Devices Magazine, vol. 21(3), pp. 21-36, 2005. (SCI Impact Factor=1.18)

41.  K. C. Liu, S. Maikap, and P. S. Chen, “Characteristics of ultrathin Hf silicate gate dielectrics on Si0.9954C0.0046/Si heterolayers”, Jpn. J. Appl. Phys., vol. 44, pp. 2447-2449, 2005. (SCI Impact Factor=1.024)

42.  P. J. Tzeng, S. Maikap, C. S. Liang, P. S. Chen, and L. S. Lee, “Physical and reliability characteristics of Hf based gate dielectrics on strained SiGe MOS devices”, IEEE Trans. Device and Material Reliability, vol. 5, pp. 168-176, 2005. (SCI Impact Factor=1.503)

43.  K. C. Liu, S. Maikap, C. H. Wu, Y. S. Chang, and P. S. Chen, “metal pre-deposition on the physical and electrical properties of ultrathin HfO2 films on Si0.9954C0.0046/Si heterolayers”, Semicond. Sci. Technol., vol. 20, pp. 1016-1021, 2005. (SCI Impact Factor=1.333)

44.  W. C. Lee, Y. J. Lee, Y.D. Wu, P. Chang, Y.L. Huang, Y.L. Hsu, J.P. Mannaerts, R.L. Lo, F.R. Chen, S. Maikap, L.S. Lee, W.Y. Hsieh, M.J. Tsai, S.Y. Lin, T. Gustffson, M. Hong, J. Kwo, “MBE-grown high-k gate dielectrics of HfO2 and (Hf–Al)O2 for Si and III–V semiconductors nano-electronics”, J. Crystal. Growth, vol. 278, pp. 619-623,  2005. (SCI Impact Factor= 1.746)

45.  M. H. Liao, S. T. Chang, M. H. Lee, S. Maikap, and C. W. Liu, “Abnormal hole mobility of biaxial strained-Si”, J. Appl. Phys., vol. 98, pp. 066104-1 to 3, 2005. (SCI Impact Factor=2.079)

46.  C. H. Lin, Z. Pei, S. Maikap, C. C. Wang, C. S. Lu, L. S. Lee and M. J. Tsai, “The effect of strain on p channel metal oxide semiconductor field effect transistor current enhancement using stress modulation silicon nitride films”, Appl. Phys. Lett., vol. 87, 262109, 2005. (SCI Impact Factor=3.841)

47.  J. Y. Wei, S. Maikap, M. H. Lee, C. C. Lee and C. W. Liu, “Hole confinement at Si/SiGe heterojunction of strained-Si  N- and PMOS devices”, Solid-State Electron., vol. 50, pp. 109-113, 2006. (SCI Impact Factor=1.440)

48.  R. Mahapatra, S. Maikap, Je Hun Lee and S. K. Ray, “Characteristics of ZrO2 gate dielectrics  on O2 and N2O plasma treated partially strain compensated Si0.69Ge0.3C0.01 layers”, J. Appl. Phys., vol.100, 034105, 2006. (SCI Impact Factor=2.079)

49.  Invited review paperS. K. Ray, R. Mahapatra, and S. Maikap, “High-k gate oxide for silicon heterostructure MOSFET devices”, J. Mater. Sci.: Mater. Electron., vol. 17. pp. 689-710, 2006. (SCI Impact Factor=0.927)

50.  R. Mahapatra, S. Maikap, and S. K. Ray, “ Electrical properties of ultrathin HfO2 gate dielectrics on partially strain compensated SiGeC/Si heterostructures”, J. Electroceram., vol. 16, pp. 545-548, 2006. (SCI, Impact Factor=0.676).

51.  C.Y. Peng, F. Yuan, C. Y. Yu, P. S. Kuo, M. H. Lee, S. Maikap, C. H. Hsu, and C. W. Liu,        “Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si”, Appl. Phys. Lett.,            vol. 90, 012114, 2007. (SCI Impact Factor=3.841)

52.  S. Maikap, M. H. Lee, S. T. Chang, and C. W. Liu, “Characteristics of strained germanium p-and n channel field effect transistors on Si (111) substrate”, Semicond. Sci. Technol., vol. 22, pp. 342-347, 2007. (SCI Impact Factor=1.333)

53.  S. Maikap, P. J. Tzeng, T. Y. Wang, H. Y. Lee, C. H. Lin, C. C. Wang, L. S. Lee, J. R. Yang, and M. J. Tsai, “HfO2/HfAlO/HfO2 nanolaminate charge trapping layers for high performance nonvolatile memory device applications”, Jpn. J. Appl. Phys., vol. 46, No. 4A, pp. 1803-1807, 2007. (SCI Impact Factor=1.024)

54.  C. H. Lin, C. C. Wang, P. J. Tzeng, S. Maikap, H. Y. Lee, L. S. Lee, and M. J. Tsai, “TiO2 nanocrytal prepared by atomic layer deposition system for nonvolatile memory application”, Jpn. J. Appl. Phys., vol. 46, pp. 2523-2326, 2007. (SCI Impact Factor=1.024)

55.  H. Y. Lee, P. S. Chen, C. C. Wang, S. Maikap, P. J. Tzeng, C. H. Lin, L. S. Lee, and M. J. Tsai, “Low power switching of nonvolatile resistive memory using hafnium oxide”, Jpn. J. Appl.     Phys., vol.46, pp. 2175-2179, 2007. (SCI Impact Factor=1.024)

56.  S. Maikap, T. Y. Wang, P. J. Tzeng, C. H. Lin, L. S. Lee, J. R. Yang, and M. J. Tsai, “ Charge storage characteristics of atomic layer deposited RuOx nanocrystals”, Appl. Phys. Lett., vol. 90, 253108, 2007; and it has been selected for the July 2, 2007 issue of Virtual Journal of Nanoscale Science & Technology. (SCI Impact Factor=3.841)

57.  S. Maikap, T. Y. Wang, P. J. Tzeng,  C. H. Lin, T. C. Tien, L. S. Lee, J. R. Yang, and M. J. Tsai, “Band offsets and charge storage characteristics of atomic layer deposited high κ HfO2/TiO2 multilayers”, Appl. Phys. Lett., vol. 90, 262901, 2007. (SCI Impact Factor=3.841)

58.  S. Maikap, T. Y. Wang, H. Y. Lee, P.J. Tzeng, C. C. Wang, L. S. Lee, K. C. Liu, J. R. Yang and M. J. Tsai, “ Charge trapping characteristics of atomic layer deposited HfO2 films with Al2O3 as a blocking oxide for high density nonvolatile memory device applications” Semicond. Sci.     Technol., vol. 22, pp. 884-889, 2007. (SCI  Impact Factor=1.333)

59.  S. Maikap, P. J. Tzeng, H. Y. Lee, C. C. Wang, T. C. Tien, L. S. Lee, and M. J. Tsai, “Physical and electrical characteristics of atomic layer deposited TiN nanocrystal memory capacitors”, Appl. Phys. Lett., vol. 91, 043114, 2007; and it has been selected for the August 13, 2007 issue of Virtual Journal of Nanoscale Science & Technology. (SCI Impact Factor=3.841)

60.  S. Maikap, P. J. Tzeng, T. Y. Wang, C. H. Lin, L. S. Lee, J. R. Yang, and M. J. Tsai, “Memory characteristics of atomic layer deposited high k HfAlO nanocrystal capacitors”, Electrochem. and Solid State Lett, vol. 11, number 4, pp. K50 K52,  2008; and it has been selected for the February 18, 2008 issue of Virtual Journal of Nanoscale Science & Technology. (SCI Impact factor=1.981) (Financial supported by NSC-96-2221-E-182-047)

61.  S. Maikap, T. Y. Wang, P. J. Tzeng, H. Y. Lee, C. H. Lin, C. C. Wang, L. S. Lee, J. R. Yang, and M. J. Tsai, “Low voltage operation of high κ HfO2/TiO2/Al2O3 single quantum well for nanoscale flash memory device applications”, Jpn. J. Appl. Phys., vol. 47, No. 3, pp. 1818-1821, 2008. (SCI Impact Factor=1.024) (Financial supported by NSC-96-2221-E-182-047)

62.  M. H. Lee, S. T. Chang, S. Maikap, K. W. Shen, and W. C. Wang, “Short channel effect improved strained Si:C source/drain PMOSFETs”, Appl. Surf. Sci., vol. 254, pp. 6144-6146, 2008. (SCI Impact factor=1.795)

63.  M. H. Lee, S. T. Chang, S. Maikap, and C. F. Huang, “The role of carbon on performance of strained-Si:C surface channel NMOSFETs”, Solid-Stale Electron., vol. 52, pp. 1569-1572, 2008. (SCI Impact Factor=1.440)

64.  M. H. Lee, S. T. Chang, C. Y. Peng, B. F. Hsieh, S. Maikap, and S. H. Liao, “Studying the impact of carbon on device performance for strained Si MOSFETs”, Thin Solid Film., vol. 517, pp. 105-109, 2008. (SCI Impact Factor= 1.935)

65.  S. Maikap, S. Z. Rahaman, and T. C. Tien,Nanoscale (EOT=5.6 nm) nonvolatile memory characteristics using n Si/SiO2/HfAlO nanocrystals/Al2O3/Pt capacitors”, IOP Nanotechnology, vol. 19, pp. 435202 (5 pages), 2008. (SCI Impact Factor=3.652) (Financial supported by NSC-96-2221-E-182-047)

66.  S. Maikap, T. Y. Wang, H. Y. Lee, S. S. Tzeng, P. J. Tzeng, C. C. Wang, C. H. Lin, T. C. Tien, L. S. Lee, P. W. Li, J. R. Yang and M. J. Tsai, “TiN nanocrystal flash memory devices”, Int. J. Nanomanufacturing, vol. 2, No. 5, pp. 407-419, 2008. (SCI)

67.  D. Panda, S. Maikap, A. Dhar, and S. K. Ray, “Memory characteristics of nickel nanocrystals with high k dielectric tunneling barriers”, Electrochemical and Solid State Lett., vol. 12 (1), pp. H7-H10, 2009.  (SCI Impact factor=1.981)

68.  S. Maikap, Atanu Das, T. Y. Wang, T. C. Tien, and L. B. Chang, “High k HfO2 nanocrystal memory capacitors prepared by phase separation of atomic-layer-deposited HfO2/Al2O3 nano-mixtures”, Journal of  The Electrochemical Society, vol. 156, K28 K32, 2009 ; and it has been selected for the February 9, 2009 issue of Virtual Journal of Nanoscale Science & Technology.    (SCI Impact factor=2.427) (Financial supported by NSC-96-2221-E-182-047)

69.  Atanu Das, S. Maikap, W. C. Li, L. B. Chang, and J. R. Yang, “ Physical and memory characteristics of atomic layer deposited high k HfAlO nanocrystal capacitors with IrOx metal gate”, Jpn. J. Appl. Phys., vol. 48, pp. 05DF02 to 1 to 5, 2009. (SCI Impact factor =1.024) (Financial supported by NSC-97-2221-E-182-051-MY3)

70.  T. C. Tien, L. C. Lin, L. S. Lee, C. J. Hwang, S. Maikap, and Y. M. Shulga, “Analysis of weakly bonded oxygen in HfO2/SiO2/Si stacks by using HRBS and ARXPS”, J. Mater. Sci: Mater. Electron., July 15, 2009.  (SCI Impact factor =1.471)

71.  M. H. Lee, S. T. Chang, S. Maikap, C. Y. Peng, and C. H. Lee, “High Ge content of SiGe Channel pMOSFETs on Si (110) surfaces”, IEEE Electron Dev. Lett., vol. 32, pp. 141-143, 2010. (SCI Impact Factor=2.719)

72.  S. Z. Rahaman, S. Maikap, H. C. Chiu, C. H. Lin, T. Y. Wu, Y. S. Chen, P. J. Tzeng, F. Chen, M. J. Kao and M. J. Tsai, “Bipolar resistive switching memory using Cu metallic filament in Ge0.4Se 0.6 solid electrolyte”, Electrochemical and Solid State Lett., vol. 13(5), pp. H159-H162, 2010.  (SCI Impact factor=1.981) (Financial supported by NSC-97-2221-E-182-051-MY3)

73.  Atanu Das, S. Maikap, C.-H. Lin, P.-J. Tzeng, T.-C. Tien, T.-Y. Wang, L.-B. Chang, J.-R. Yang, and M.-J. Tsai, “Ruthenium oxide metal nanocrystal capacitors with high-k dielectric tunneling barriers for nanoscale nonvolatile memory device applications”, Microelectronics Engineering”, vol. 87, pp. 1821 to 1827, 2010. (SCI Impact Factor=1.575) (Financial supported by NSC-96-2221-E-182-047)

74.  S. Z. Rahaman and S. Maikap, “Low power resistive switching memory using Cu metallic filament in Ge0.2Se0.8 solid electrolyte”, Microelectronics Reliability, vol. 50, pp. 643-646, 2010. (SCI Impact Factor=1.101) (Financial supported by NSC-97-2221-E-182-051-MY3)

75.  S. Maikap, A. Prakash, W. Banerjee, Anirban Das and C. S. Lai, “Characteristics of pH sensors fabricated by using protein mediated CdSe/ZnS quantum dots”, Microelectronics Reliability, vol. 50, pp. 747-752, 2010. (SCI Impact Factor=1.101)

76.  A. Prakash, S. Maikap, H. Y. Lee, W. S. Chen, F. Chen, M. J. Tsai, and M. J. Kao, “Improved bipolar resistive switching memory using W/TaOx/W structure”, Advanced Materials Research, vol. 159, pp. 333-337, 2011. (SCI Impact Factor=0.483) (Financial supported by NSC-98-2221-E-182-052-MY3)

77.  W. C. Li, W. Banerjee, S. Maikap, and J. R. Yang, “Particle size and morphology of iridium oxide nanocrystals in nonvolatile memory device”, Materials Transactions, vol. 52, No. 3, pp. 331-335, 2011. (SCI Impact Factor=0.787)

78.  W. Banerjee, S. Z. Rahaman, A. Prakash, and S. Maikap, “High κ Al2O3/WOx bilayer dielectrics for low power resistive switching memory applications”, Jpn. J. Appl. Phys., vol. 50, 10PH01,

2011.   (Financial supported by NSC-97-2221-E-182-051-MY3) (SCI Impact Factor=1.024)

79.  S. Maikap, W. Banerjee, T. C. Tien, T. Y. Wang, and J. R. Yang, “Temperature dependent physical and memory characteristics of atomic layer deposited RuOx metal nanocrystal capacitors”, Journal of Nanomaterials, vol. 2011, ID: 810879, 2011.   (Financial supported by NSC-97-2221-E-182-051-MY3) (SCI Impact Factor=1.675)

80.  W. Banerjee, S. Maikap, T. C. Tien, W. C. Li, and J. R. Yang, “Impact of metal nanolayer thickness on tunneling oxide and memory performance of core-shell iridium-oxide nanocrystals”, J. Appl. Phys., vol. 110, 074309, 2011. (Financial supported by NSC-97-2221-E-182-051-MY3) (SCI Impact Factor=2.079)

81.  L. B. Chang, A. Das, R. M. Lin, S. Maikap, M. J. Jeng, and S. T. Chou, “An observation of charge trapping phenomena GaN/AlGaN/Gd2O3/Ni Au structure”, Appl. Phys. Lett., vol. 98, 222106, 2011. (SCI Impact Factor=3.841)

82.  W. Banerjee, S. Maikap, S. Z. Rahaman, and A. Prakash, “Improved resistive switching memory characteristics using core shell IrOx nano dots in Al2O3/WOx bilayer structure”, J. Electrochem. Soc., vol. 159 (2), H177 H182, 2012. (Financial supported by NSC-97-2221-E-182-051-MY3) (SCI Impact Factor=2.427)

83.  W. Banerjee, S. Z. Rahaman, and S. Maikap, “Excellent uniformity and multilevel operation in formation-free low-power resistive switching memory using IrOx/AlOx/W cross-point”., Jpn. J. Appl. Phys., (in press) 2012. (Financial supported by NSC-98-2923-E-182-001-MY3) (SCI Impact Factor=1.024)

84.  S. Z. Rahaman, S. Maikap, S. K. Ray, H. Y. Lee, W. S. Chen, F. Chen, M. J. Kao and M. J. Tsai, “Record resistance ratio and bipolar/unipolar resistive switching memory characteristics using GeOx solid electrolyte”, Jpn. J. Appl. Phys., (in press) 2012. (Financial supported by NSC-98-2923-E-182-001-MY3) (SCI Impact Factor=1.024)

85.  D. Jana, S. Maikap, T. C. Tien, H. Y. Lee, W. S. Chen, F. Chen, M. J. Kao, and M. J. Tsai, “Formation polarity dependent improved resistive switching memory performance using IrOx/GdOx/WOx/W structure”,  Jpn. J. Appl. Phys., (in press) 2012. (Financial supported by NSC-98-2221-E-182-052-MY3) (SCI Impact Factor=1.024)

86.  A. Prakash, S. Maikap, C. S. Lai, H. Y. Lee, W. S. Chen, F. Chen, M. J. Kao, and M. J. Tsai, “Improvement uniformity of resistive switching parameters by selecting the electroformation polarity in IrOx/TaOx/WOx/W structure”, Jpn. J. Appl. Phys., (in press) 2012. (Financial supported by NSC-98-2221-E-182-052-MY3) (SCI Impact Factor=1.024)

87.  W. Banerjee, S. Maikap, C. S. Lai, Y. Y. Chen, T. C. Tien, H. Y. Lee, W. S. Chen, F. T. Chen, M. J. Kao, M. J. Tsai, and J. R. Yang., “Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots”., Nanoscale Research Letters, (in press) 2012. (Financial supported by NSC-97-2221-E-182-051-MY3) (SCI Impact Factor=2.56)

88.  A. Prakash, S. Maikap, C. S. Lai, T. C. Tien, W. S. Chen, H. Y. Lee, F. T. Chen, M. J. Kao, and M. J. Tsai, “Bipolar resistive switching memory using bilayer TaOx/WOx films”, Solid-State Electron. (in press), 2012. (Financial supported by NSC-98-2221-E-182-052-MY3) (SCI Impact Factor=1.44)

89.  S. Z. Rahaman, S. Maikap, W. S. Chen, H. Y. Lee, F. Chen, T. C. Tien, and M. J. Tsai, Impact of TaOx nanolayer at the GeSex/W interface on resistive switching memory performance and investigation of Cu nanofilament”, J. Appl. Phys., (in press), 2012. (Financial supported by NSC-97-2221-E-182-051-MY3) (SCI Impact Factor=2.079)

90.  D.  Jana, S. Maikap, W. Banerjee, A. Prakash, S. Z. Rahaman,  T. C. Tien, W. S. Chen, H. Y. Lee, F. T. Chen, M. J. Kao, and M. J. Tsai, “Bipolar resistive switching memory characteristics using IrOx/GdOx/WOx/W structure”, International Journal of Nanotechnology, (under review), 2011. (Financial supported by NSC-98-2221-E-182-052-MY3) (SCI Impact Factor=1.33)

 

International Conference Papers:

1.      S. Maikap, S. K. Ray and C. K. Maiti, “NO/O2/NO plasma grown oxynitride films on silicon”, Proc. 10th Int. Workshop on Physics of Semiconductor Devices (IWPSD), New Delhi, pp. 411-414 (1999).

2.       B. Senapati, S. Maikap and C. K. Maiti, “Deposition of stoichiometric SiO2 on silicon-germanium strained layers”, Proc. 10th Int. Workshop on Physics of Semiconductor Devices (IWPSD) , New Delhi, pp. 448-451 (1999).

3.      G. S. Kar, S. Maikap, A. Dhar and S. K. Ray, “Schottky diode on Si/SiGeC quantum well          heterostructures for long wavelength IR detector”, Photonics-2000, Kolkata, 2001.

4.      R. Mahapatra, S. Maikap, G. S. Kar and S. K. Ray, “ Plasma grown gate oxides on tensile-strained SiC/Si heterostructure”, in the Proc. of 11th Int’l Workshop on Physics of Semiconductor Devices (IWPSD), New Delhi, India, vol. 2, pp. 1118-1120 (2001).

5.      G. S. Kar, S. Maikap, S. K. Ray, and N. B. Chakrabarti, “Computation of effective mobility in buried channel heterostucture MOSFET”, in the Proc. of 11th Int’l Workshop on Physics of    Semiconductor Devices (IWPSD), New Delhi, vol. 2, pp. 874-877 (2001).

6.      Y. S. Noh, S. Chatterjee, S. Nandi, S. K. Samanta, C. K. Maiti, S. Maikap, W. K. Choi,” Characteristics of MIS capacitors using Ta2O5 films deposited on ZnO/p Si”, The 8th  IUMRS International Conference on Electronic Materials (IUMRS ICEM2002), June 10-14, Xi'an, China, pp. 652-653 (2002).

7.      C. K. Maiti, S. Maikap, S. K. Samanta, and K. S. Chari, “Design and simulation of Hetero-FETs on SOI substrates”, Proc. of XII th Int’l Workshop on the Physics of Semiconductor Device, Indian Institute of Technology (IIT), Chennai, India, 2003.

8.      K. S. Chari, S. Maikap, S. K. Samanta, and C. K. Maiti, “Design and simulation of strained-SiGe channel p MOSFETs”, Proc. of XII th Int’l Workshop on the Physics of Semiconductor Device, Indian Institute of Technology (IIT), Chennai, India, 2003.

9.      R. Mahapatra, S. Maikap, A. Dhar, B. K. Mathur and S. K. Ray, “Interfacial properties of high-k HfO2 gate dielectrics on  strained Si0.74Ge0.26/Si for heterostructure MOSFET applications”,  Proc. of XII th Int’l Workshop on the Physics of Semiconductor Device, Indian Institute of Technology (IIT), Chennai, India, pp. 447-449, 2003.

10.  R. Mahapatra, S. Maikap, A. Dhar, B. K. Mathur and S. K. Ray, “Characteristics of high k ZrO2 gate dielectrics on O2/N2O plasma treated Si0.69Ge0.3C0.01/Si heterolayers”, 4th Asian meeting    on ferroelectrics, Indian Institute of Science (IISc), Bangalore, India, pp. 126, 2003.

11.  W. C. Hua, M. H. Lee, P. S. Chen, S. Maikap, C. W. Liu and K. M. Chen, “Comprehensive Flicker noise chracterization of the strained Si NMOSFETs, Symposium on Nano Device Technology (SNDT), 2004.

12.  Invited” M. H. Lee, P. S. Chen, W. C. Hua, C. Y. Yu, Y. C. Lee, S. Maikap, Y. M. Hsu, C. W. Liu, S. C. Lu, W.–Y. Hsieh and M.–J. Tsai, “The noise characteristics of strained-Si MOSFETs”,  International SiGe Technology and Device Meeting (ISTDM), Frankfurt (Oder), Germany, 16-19 May, 2004.

13.  W. G. Lee, Y. J. Lee, Y. D. Yu, P. Chang, Y. L. Hsu, C. P. Chen, J. P. Mannaerts, S. Maikap, C. W. Liu, L. S. Lee, W. Y. Hsieh, M. J. Tsai, S. Y. Lin, M. Hong, and J. Kwo, “MBE grown high-k gate dielectrics of HfO2 and (Hf-Al)O2 for Si and III-V semiconductors nano-electronics”, MBE Taiwan, 29th April-30rd April, 2004.

14.  W. J. Lee, Y. J. Lee, Y. L. Hsu, K. Y. Lee, C. H. Chu, C. C. Huang, Y. L. Huang, T. Gustafsson, E. Garfunkel, S. Maikap, L. S. Lee, S. Y. Lin, M. Hong, and R. Kwo, “Demonstration of atomically abrupt interface of HfO2 high k gate dielectrics on Si for nano CMOS”, Taiwan International Conference on Nanotechnology, 30th June-3rd July, 2004.

15.  Y. S. Liu, S. Maikap, P. S. Chen and K. C. Liu, “High k HfO2 gate dielectric for tensile strained-SiC alloy layers”, Taiwan International Conference on Nanotechnology, 30th June-3rd July, 2004.

16.  P. J. Tzeng, S. Maikap, W. Z. Lai, C. S. Liang, P. S. Chen, L. S. Lee and C. W. Liu, “Post oxidation annealing effects on the reliability of ALD HfO2 films on strained-Si0.8Ge0.2 layers”, Proc. of 11th  IPFA, Taiwan, pp. 29-32, July 5-8, 2004.

17.  Invited” C. W. Liu, S. Maikap, M. H. Liao and F. Yuan, “BiCMOS devices under mechanical strain”, 206th  The Electrochemical Society Meeting (ECS), Hawai, Oct.  2004.

18.  Y. S. Liu, S. Maikap, P. S. Chen and K. C. Liu, “Effect of Hf-metal pre-deposition on the electrical properties of HfO2 films on tensile strained Si0.9954C0.0046 layers”,     SSDM, Japan, pp. 538-539, 2004.

19.  S. K. Ray, R. Mahapatra, S. Maikap, and J. H. Lee, “Ultrathin HfO2 gate dielectrics on partially strain compensated SiGeC/Si heterolayers”, E-MRS, France, 2004.

20.  K. C. Liu, S. Maikap, S. Ray, P. S. Chen, “Temperature dependence of electrical properties of HfO2 films on strained SiC/Si heterolayers”, Fourth International Conference of Silicon         Epitaxy and Heterostructures, May 23-26, Japan, 2005.

21.  R. Mahapatra, S. Maikap, S. K. Ray, “Electrical Properties of Ultrathin HfO2 Gate Dielectrics  on Partially Strain Compensated SiGeC/Si Heterostructures”, 3rd International Conference on Materials for Advanced Processing Technologies (ICMAT 2005) & 9th International Conference on Advanced Materials (ICAM 2005), 4th-7th July, Singapore, 2005.

22.  C. Y. Peng, F. Yuan, M. H. Lee, C. Y. Yu, S. Maikap, M. H. Liao, S. T. Chang, and C. W. Liu, “Novel schottky barrier strained germanium PMOS”, Semiconductor Device Research Symposium, 2005 International, Washington D.C., Dec. 7-9, pp. 84-85, 2005.

23.  S. Maikap, P. J. Tzeng, L. S. Lee, H. Y. Lee, C. C. Wang, P. H. Tsai, K. S. Chang-Liao, W. J. Chen, K. C. Liu, P. R. Jeng, and M. J. Tsai, “High k Hf based charge trapping layer with Al2O3 blocking oxide for high density flash memory”, International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA), April 24th-26th, pp. 36-37, Hsinchu, Taiwan, 2006.

24.  “Invited” S. Maikap, P. J. Tzeng, T. Y. Wang, C. H. Lin, H. Y. Lee, C. C. Wang, L. S. Lee, J. R. Yang, and M. J. Tsai, “High performance flash memory devices”, Symposium on Nano       Device Technology (SNDT), April 26th-28th , p. 16, Hsinchu, Taiwan, 2006.

25.  M. H. Lee, S. T. Chang, S. Maikap, C. Y. Yu and C. W. Liu, “The interface properties of SiO2/strained Si with carbon incorporation surface channel MOSFETs”, SiGe Technology and Device Meeting, 2006. ISTDM 2006, Third International, May 15-17, pp. 1-2, 2006.

26.  H. Y. Lee, P. S. Chen, C. C. Wang, S. Maikap, P. J. Tzeng, C. H. Lin, L. S. Lee, and M. J. Tsai, “Low power of nonvolatile hafnium oxide resistive memory”, International Conference on Solid State Devices and Materials ( SSDM), pp. 288-289, Japan, 2006.

27.  C. H. Lin, C. C. Wang, P. J. Tzeng, S. Maikap, H. Y. Lee, L. S. Lee and M. J. Tsai, “TiO2 nanocrystal prepared by ALD system at elevated temperature”, International Conference on Solid State Devices and Materials ( SSDM), pp. 704-705, Japan, 2006.

28.  S. Maikap, P. J. Tzeng, T. Y. Wang, C. H. Lin, H. Y. Lee, C. C. Wang,. L. S. Lee, J. R. Yang    and M. J. Tsai, “High k HfO2/Al2O3 nanolaminated charge trapping layers for high performance flash memory device applications”, International Conference on Solid State Devices and         Materials (SSDM), pp. 984-985, Japan, 2006.

29.  S. Maikap, P. J. Tzeng, T. Y.  Wang, C. H. Lin, H. Y. Lee, L. S. Lee, J. R. Yang, and M.-J. Tsai, “Very low voltage operation of Al2O3/HfO2/TiO2/Al2O3 single quantum well memory with good retention”, International Conference on Solid State Devices and Materials (SSDM), pp. 582-583, Japan, 2006.

30.  S. Maikap, P. J. Tzeng, S. S. Tseng, C. H. Lin, H. Y. Lee, C. C. Wang, L. S. Lee, T. C. Tien,    S. C. Lo,  P. W. Li, M. J. Tsai, “High density and uniform ALD TiN nanocrystal flash memory devices with large memory window and good retention”, International Electron Devices and    Materials Symposia (IEDMS), pp. 85-86, Tainan, Taiwan, 2006. (Best Paper Award)

31.  S. Maikap, P. J. Tzeng, S. S. Tseng, T. Y. Wang, C. H. Lin, H. Y. Lee, C. C. Wang, T. C. Tien, L. S. Lee, P. W. Li, J. R. Yang  and M. J. Tsai, “High k HfO2/TiO2/HfO2 multilayer quantum well flash memory devices”, International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA), April 23th-25th , pp. 18-19, Hsinchu, Taiwan, 2007.

32.  T. Y. Wang, S. Maikap, P. J. Tzeng, D. Panda, L. S. Lee, M. J. Tsai, and J. R. Yang, “Effect of nano-grain on the memory characteristics of high-k HfAlO charge trapping layers for nano-scale nonvolatile memory device applications”,  International Conference on Solid State Devices and Materials (SSDM), pp. 464-465, Tsukuba, Japan, 2007.

33.  S. Maikap, P. J. Tzeng, T. Y. Wang, H. Y. Lee, C. H. Lin, S. C. Lo, L. S. Lee, J. R. Yang, M. J. Kao  and M. J. Tsai, “Nanocrystal floating gate memory devices using atomic layer deposited TiN/Al2O3 nanolaminate layers”, International Conference on Solid State Devices and Materials (SSDM), pp. 240-241, Tsukuba, Japan, 2007.

34.  S. Maikap, T. Y. Wang, P. J. Tzeng, D. Panda, L. S. Lee, J. R. Yang, M. J. Kao and M. J. Tsai, “Memory characteristics of atomic layer deposited high k HfAlO nanocrystals”, 10th International Conference on Advanced Materials (ICAM), International Union of Materials Research Sicieties (IUMRS), 8-13 October, Bangalore, India, p. V-25, 2007.

35.  D. Panda, S. Maikap, A. Dhar, and S. K. Ray, “Characteristics of nickel nanocrystals embedded in HfO2 matrix for flash memory devices”, 10th International Conference on Advanced Materials (ICAM), International Union of Materials Research Sicieties (IUMRS), 8-13 October, Bangalore, India, p. V-21, 2007.

36.  M. H. Lee, S. T. Chang, C. F. Huang, S. Maikap, K. W. Shen, R. S. Syu, and Y. T. Liu, ”Strained Si:C Source/Drain NMOSFETs for Channel Strain Enhancement” Semiconductor Device Research Symposium, 2007 International,  Washington D.C., Dec. 12-14, pp. 1-2, 2007.

37.  M. H. Lee, S. T. Chang, S. Maikap, K. W. Shen and W. C. Wang, “Short  channel effect improved strained Si:C source/drain PMOSFETs”, Fifth  International Symposium on Control of Semiconductor Interfaces (ISCSI-V), Hachioji, Tokyo, Japan, Nov. 12-14, pp. 203-204, 2007.

38.  S. Maikap, W. Banerjee, P. J. Tzeng, T. Y. Wang, C. H. Lin, T. C. Tien, L. S. Lee, J. R. Yang, M. J. Kao, and M. J. Tsai, “Highly Thermally Stable and Reproducible of ALD RuO2 Nanocrystal Floating Gate Memory Devices with Large Memory Window and Good Retention”, International Symposium on VLSI Technology, Systems, and Applications (VLSI TSA), Hsinchu, Taiwan, April 21-23, pp. 50-51, 2008. (Financial supported by NSC-96-2221-E-182-047)

39.  S. Z. Rahaman, Y. R. Tsai, and S. Maikap, “Nanoscale nonvolatile memory devices using high k HfO2/TiO2 multilayers”, 6th Asian Conference on Electrochemistry in Taipei (ACEC2008), May 11-14, No. 0558, 2008. (Financial supported by NSC-96-2221-E-182-047)

40.  W. Banerjee and S. Maikap, “RuO2 metal nanocrystal memory prepared at high temperature”,   6th Asian Conference on Electrochemistry in Taipei (ACEC2008), May 11 to 14, No. 0560, 2008. (Financial supported by NSC-96-2221-E-182-047)

41.  Atanu Das, S. Maikap, and L. B. Chang, “Memory characteristics of high k HfAlO nanomixtures”, 6th Asian Conference on Electrochemistry in Taipei (ACEC2008), May 11 to 14, No. 0580, 2008. (Financial supported by NSC-96-2221-E-182-047)

42.  S. Maikap, W. Banerjee, S. Z. Rahaman, and Atanu Das, “Flash memory device characteristics of atomic layer deposited crystallite Al2O3 films with large memory window and long retention”, IEEE Silicon Nanoelectronics Workshop”, June 15 to16, P2 to 28, Honolulu, Hawaii, 2008. (Financial supported by NSC-96-2221-E-182-047)

43.  W. C. Li, S. Maikap, and J. R. Yang, “Design a new nonvolatile memory device using copper nanobridging in tantalum oxide films”, Proceeding of the 28th Symposium on Microscopy, M-P 14, Taichung, June 21, 2008.  

44.  S. Z. Rahaman, A. Das, and S. Maikap, “Nanoscale (EOT= 5.6 nm) nonvolatile memory capacitors using atomic layer deposited high k HfAlO nanocrystals”, International Conference on Solid State Devices and Materials (SSDM), P 4 2, pp. 458 to 459, Tsukuba, Japan, 2008. (Financial supported by NSC-96-2221-E-182-047)

45.  Y. R. Tsai, S. Maikap, D. Panda, S. Z. Rahaman, C. S. Lai, P. J. Tzeng, C. H. Lin, T. C. Tien, D. Wu, C. C. Wang, M. J. Kao, and M. J. Tsai, “Resistive switching memory using high k Ta2O5 films”, International Conference on Solid State Devices and Materials (SSDM), C-8-2, pp. 906-907, Tsukuba, Japan, 2008.

46.  W. Banerjee and S. Maikap, “Physical and electrical characteristics of atomic layer deposited RuO2 nanocrystals for nanoscale nonvolatile memory applications”, 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), D4-3, October 20-23, Beijing, China, 2008. (Financial supported by NSC-96-2221-E-182-047)

47.  S. Maikap, S. Z. Rahaman, W. Banerjee, C.H. Lin, P. J. Tzeng, C. C. Wang, M. J. Kao, and M. J. Tsai, “Enhanced Flash Memory Device Characteristics Using ALD TiN/Al2O3 Nanolaminate Charge Storage Layers”, 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), D4 to 5, October 20 to 23, Beijing, China, 2008. (Financial supported by NSC-96-2221-E-182-047)

48.  Atanu Das, W. Banerjee, S. Z. Rahaman, S. Maikap, and L. B. Chang, “ Memory characteristics of atomic layer deposited HfO2 nanocrystal capacitors with IrOx metal gate”, S2-2, p. 15, Extended Abstracts of International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology, November 5 to 7, Tokyo, Japan, 2008. (Financial supported by NSC-96-2221-E-182-047)

49.  Atanu Das, S. Maikap, and L. B. Chang, “Nonvolatile memory characteristics of ALD RuOx metal nanocrystals in the n Si/SiO2/HfO2/RuOX/Al2O3/IrOX capacitors”, International Electron Devices and Materials Symposia (IEDMS), November 27 to 28,  Taichung, Taiwan, 2008. (Financial supported by NSC-96-2221-E-182-047)

50.  W. C. Li, S. Maikap, and J. R. Yang, “Characteristics of atomic layer deposited high k HfAlOx nanocrystals in n Si/SiO2/HfO2/HfAlOx/Al2O3/Pt memory capacitors”, International Electron Devices and Materials Symposia (IEDMS), November 27 to 28,  Taichung, Taiwan, 2008. (Financial supported by NSC-97-2221-E-182-051-MY3)

51.  W. Banerjee, S. Maikap, W. C. Lee, T. C. Tien, and J. R. Yang, “Novel IrOx metal nanocrystal memory device with IrOx metal gate”, International Electron Devices and Materials Symposia (IEDMS), November 27-28,  Taichung, Taiwan, 2008. (Financial supported by NSC-96-2221-E-182-047)

52.  S. Z. Rahaman, S. Maikap, H. C. Chiu, C. H. Lin, C. S. Lai, P. J. Tzeng, T. Y. Wu, T. C. Tien, M. J. Kao, and M. J. Tsai, “Novel resistive memory device using Cu/GeSe/W structure with low current operation”, International Electron Devices and Materials Symposia (IEDMS), November 27-28,  Taichung, Taiwan, 2008. (Financial supported by NSC-97-2221-E-182-051-MY3)

53.  S. Maikap, S. Z. Rahaman, W. Banerjee, A. Das, C. H. Lin, P. J. Tzeng, S. S. Tzeng, P. W. Li, and M. J. Tsai, “Charge storage characteristics of ALD high k HfO2/TiO2/HfO2 multilayer quantum well flash memory devices for nanoscale NAND applications”, International Electron Devices and Materials Symposia (IEDMS), November 27 to 28,  Taichung, Taiwan, 2008. (Financial supported by NSC-96-2221-E-182-047)

54.  S. Z. Rahaman, S. Maikap, C. H. Lin, T. Y. Wu, Y. S. Chen, P. J. Tzeng, F. Chen, C. S. Lai, M.J. Kao, and M. J. Tsai, “Low current and voltage resistive switching memory device using novel Cu/Ta2O5/W structure”, International Symposium on VLSI Technology, Systems, and Applications (VLSI TSA), Hsinchu, Taiwan, April: 27-29, pp. 33-34, 2009. (Financial supported by NSC-97-2221-E-182-051-MY3)

55.  Y. R. Tsai, K. C. Liao, and S. Maikap, “High k Ta2O5 film for resistive switching memory application”, 10th International Conference on Ultimate Integration on Silicon, March 18-20, Aachen, Germany, pp. 229-232, 2009.

56.  S. Z. Rahaman, S. Maikap, C. H. Lin, T. Y. Wu, Y. S. Chen, P. J. Tzeng, F. Chen, H. C. Chiu, M. J. Kao, and M. J. Tsai, “Low power operation of resistive switching memory device using novel W/Ge0.4Se0.6/Cu/Al structure”, IEEE International Memory Workshop (IMW), Monterey, California, May 10-14, pp. 21-24, 2009. (Financial supported by NSC-97-2221-E-182-051-MY3)

57.  W. C. Li, S. Maikap, and J. R. Yang, “High k HfAlOx single layer nanocrystal memory capacitors for nanoscale NAND application”, 215th Electrochemical Soc. Meet., San Francisco, May 24-29, Abs. 764, 2009. (Financial supported by NSC-97-2221-E-182-051-MY3)

58.  S. Maikap, W. Banerjee, W. C. Li, and J. R. Yang, “Memory characteristics of IrOx metal nanocrystals with IrOx metal gate”, 215th Electrochemical Soc. Meet., San Francisco, May 24-29, Abs. 1192, 2009. (Financial supported by NSC-97-2221-E-182-051-MY3)

59.  Y. R. Tsai, S. Z. Rahaman, and S. Maikap, “Cu chain formation in Cu/Ta2O5/TiN resistive switching memory”, 215th Electrochemical Soc. Meet., San Francisco, May 24-29, Abs. 91, 2009.

60.  W. Banerjee, S. Maikap, W. C. Li, T.C. Tien, and J. R. Yang, “IrOx metal nanocrystal flash memory device with IrOx metal gate for NAND application”, IEEE Silicon Nanoelectronics Workshop, Japan, pp. 27-28, 2009. (Financial supported by NSC-97-2221-E-182-051-MY3)

61.  Amit Prakash, Anirban Das, S. Maikap, and C. S. Lai, “pH sensor using protein mediated gold nanocrystal array”, 9th International Conference on Nanotechnology (IEEE Nano), Genoa, July 26-30, Italy, pp. 1054-1057, 2009.

62.  S. Maikap, W. Banerjee, Anirban Das, W. C. Li, and J. R. Yang, “Memory characteristics of IrOx metal nanocrystals embedded in high k Al2O3 films with IrOx metal gate”, The 9th International Conference on Nanotechnology (IEEE Nano), Genoa, July 26-30, Italy, pp. 462-465, 2009. (Financial supported by NSC-97-2221-E-182-051-MY3)  

63.  W. Banerjee and S. Maikap, “High k Hf based nanocrystal memory capacitors with IrOx metal gate for NAND application”, IEEE International Workshop on Memory Technology, Design and Testing (MTDT), Hsinchu, Taiwan, Aug. 31 to Sep. 2, pp. 31 to 33, 2009. (Financial supported by NSC-97-2221-E-182-051-MY3)

64.  S. Maikap, S. Z. Rahaman, T. Y. Wu, F. Chen, M. J. Kao, and M. J. Tsai, “Low current (5 pA) resistive switching memory using high-k Ta2O5 solid electrolyte”, The 39th European Solid-State Device Research Conference and the 35th European Solid-state Circuits Conference (ESSDERC/ESSCIRC), Athens, Greece, September 14-18, pp. 217-220, 2009. (Financial supported by NSC-97-2221-E-182-051-MY3)

65.  S. Z. Rahaman, S. Maikap, C. H. Lin, T. Y. Wu, Y. S. Chen, P. J. Tzeng, F. Chen, M. J. Kao, and M. J. Tsai, “Formation free resistive switching memory device using Ge0.4Se0.6 solid electrolyte”, International Conference on Solid State Devices and Materials (SSDM), Miyagi, Japan, October 7-9, P-4-10, 2009. (Financial supported by NSC-97-2221-E-182-051-MY3)

66.  K C. Liao, A. Prakash, and S. Maikap, “Low power operation of resistive switching memory using novel IrOx/SrTiOx/W structure”, International Electron Devices and Materials Symposia (IEDMS), November 19-20, Tao-Yuan, 2009.

67.  Anirban Das, S. Maikap, and C. S. Lai, “pH sensor using protein mediated CdSe/ZnS quantum dots”, International Electron Devices and Materials Symposia (IEDMS), November 19-20, Tao-Yuan, 2009.

68.  W. Banerjee, S. Maikap, W. C. Li, T. C. Tien, and J. R. Yang, “Double layers of IrOx metal nanocrystals for nanoscale nonvolatile flash memory device applications”, International Electron Devices and Materials Symposia (IEDMS), November 19 to 20, Tao Yuan, 2009. (Financial supported by NSC-97-2221-E-182-051-MY3)

69.  S. Z. Rahaman, S. Maikap, M. J. Tsai, and M. J. Kao,“Low current operation of resistive switching memory using Au/Cu/Ge0.2Se0.8/W structure”, International Electron Devices and Materials Symposia (IEDMS), November 19-20, Tao-Yuan, 2009. (Financial supported by NSC-97-2221-E-182-051-MY3)

70.  C. I. Lin, A. Prakash and S. Maikap, “Novel high k Ta2O5 resistive memory switching using IrOx metal electrode”, International Semiconductor Device Research Symposium(ISDRS), University of Maryland, MD, December 9-11, pp. 1-2, 2009. (Financial supported by NSC-98-2221-E-182-052-MY3)

71.  Anirban Das, A. Prakash and S. Maikap, “Protein mediated gold nanocrystals for non-volatile memory applications”, International Thin Films Conference (TACT), Taipei, December 14-16, p. 197, 2009. (Financial supported by NSC-97-2221-E-182-051-MY3)

72.  S. Maikap, C. I. Lin, S. Z. Rahaman and W. Banerjee, “High k Ta2O5 thin films with IrOx metal electrode for resistive memory applications”, International Thin Films Conference (TACT), Taipei, December 14-16, p. 244, 2009. (Financial supported by NSC-98-2221-E-182-052-MY3)

73.  S. Maikap and Atanu Das, “A fine nano layer (nanocrystal) coating by atomic layer deposition”, International Thin Films Conference (TACT), Taipei, December 14 to 16, p. 205, 2009. (Financial supported by NSC-97-2221-E-182-051-MY3)

74.  Anirban Das, A. Prakash, S. Maikap, and C. S. Lai, “Protein mediated gold nanocrystals for pH sensors”, XVth International Workshop on Physics of Semiconductor Devices (IWPSD), Delhi, December 15-19, 2009.

75.  W. Banerjee, S. Maikap, W. C. Li, and J. R. Yang, “Nanoscale nonvolatile memory characteristics of IrOx metal nanocrystals with double layers”, XVth International Workshop on Physics of Semiconductor Devices (IWPSD), Delhi, December 15-19, 2009. (Financial supported by NSC-97-2221-E-182-051-MY3)

76.  A. Prakash and S. Maikap, “A novel resistive switching memory using high k Ta2O5 films”, XVth International Workshop on Physics of Semiconductor Devices (IWPSD), Delhi, December 15-19, 2009. (Financial supported by NSC-98-2221-E-182-052-MY3)

77.  S. Z. Rahaman, S. Maikap, C. H. Lin, P. J. Tzeng, H. Y. Lee, T. Y. Wu, Y. S. Chen, F. Chen, M. J. Kao, and M. J. Tsai, “Low current bipolar resistive switching memory using Cu metallic filament in Ge0.2Se0.8 solid electrolyte”, International Symposium on VLSI Technology, Systems, and Applications (VLSI TSA), Hsinchu, Taiwan, pp. 134 to 135, 2010. (Financial supported by NSC-97-2221-E-182-051-MY3)

78.  K. C. Liao, S. Z. Rahaman and S. Maikap,“Low power bipolar resistive switching memory using Cu metallic filament in high k SrTiO3 solid electrolyte”,  Material Research Society (MRS), Spring Meeting, San Francisco, CA, April 5-9, 2010.

79.  S. Maikap and S. Z. Rahaman, “1st International Workshop on Conductive Bridge Memory”, April 23-24, Stanford University, p. 2, 2010. (Financial supported by NSC-97-2221-E-182-051-MY3)

80.  S. Z. Rahaman and S. Maikap, “Improved resistive switching memory characteristics using novel bi layered Ge0.2Se0.8/Ta2O5 solid electrolytes”, IEEE International Memory Workshop (IMW), Seoul, South Korea, May 16-19, pp. 70-73, 2010. (Financial supported by NSC-97-2221-E-182-051-MY3)

81.  W. Banerjee, A. Prakash, and S. Maikap, “Bipolar resistive switching memory using novel IrOx/Al2O3/W structure”, IEEE Silicon Nanoelectronics Workshop”, P2.21, Honolulu, Hawaii, 2010. (Financial supported by NSC-98-2221-E-182-052-MY3)

82.  A. Prakash and S. Maikap, “Enhanced bipolar resistive memory switching using novel W/Ta2O5/W structure”, Advances in Nonvolatile Memory Materials and Devices, Kempinski Hotel, July 11-16, Suzhou, China, p. 38, 2010 ((Financial supported by NSC-98-2221-E-182-052-MY3)

83.  S. Maikap, S. Majumdar, W. Banerjee, S. Mondal, S. Manna, and S. K. Ray, “Ge nanowires for nanoscale nonvolatile memory applications”, International Conference on Solid State Devices and Materials (SSDM), Tokyo, Japan, pp. 91-92, 2010. (Financial supported by NSC-98-2923-E-182-001-MY3)

84.  W. Banerjee and S. Maikap, “Nanoscale flash and resistive switching memories using IrOx nanocrystals”, 10th IEEE International Conference on Solid State and Integrated Circuit Technology (ICSICT), accepted, Shanghai, China, Nov. 1 to 4, 2010. (Financial supported by NSC-97-2221-E-182-051-MY3)

85.  A. Prakash, S. Maikap, H. Y. Lee, G. Chen, F. Chen, M. j. Tsai and M. J. Kao, “Improved bipolar resistive switching memory using W.TaOx/W structure”, International Conference on Micro Nano Devices, Structures and Computing Systems (MNSDCS), November 6 to7, Singapore, 2010. (Financial supported by NSC-98-2221-E-182-052-MY3)

86.  W. Banerjee, S. Maikap, W. C. Li and J. R. Yang, “Temperature dependence IrOx metal nanocrystal capacitors for high performance nanoscale nonvolatile flash memory device applications”, International Electron Devices and Materials Symposia (IEDMS), November 18 to 19, Chungli, P-D-26, 2010. (Financial supported by NSC-97-2221-E-182-051-MY3)

87.  S. Z. Rahaman and S. Maikap,“High performance CBRAM devices using thermally deposited Ge0.5Se0.5 film”, International Electron Devices and Materials Symposia (IEDMS), November 18 to 19, Chungli, B3-9, 2010. (Financial supported by NSC-97-2221-E-182-051-MY3)

88.  S. Maikap and W. Banerjee,“Nanoscale flash memory devices using ALD high k HfO2:Al2O3 film”, International Electron Devices and Materials Symposia (IEDMS), November 18 to 19, Chungli, P-D-27, 2010. (Financial supported by NSC-97-2221-E-182-051-MY3)

89.  A. Prakash, S. Maikap, H. Y. Lee, G. Chen, F. Chen, M. J. Kao, and M. J. Tsai, “Low power bipolar resistive switching memory using novel W/Ta2O5/W structure”, International Electron Devices and Materials Symposia (IEDMS), November 18 to 19, Chungli, B3 to 6, 2010. (Financial supported by NSC-98-2221-E-182-052-MY3)

90.  K. C. Liao and S. Maikap, “Physical and electrical characteristics of IrOx/SrTiO3/W resistive switching memory devices”, International Electron Devices and Materials Symposia (IEDMS), November 18 to 19, Chungli, D5-1, 2010. (Financial supported by NSC-98-2221-E-182-052-MY3)

91.  W. Banerjee and S. Maikap, “ High k Al2O3/WOx charge trapping flash and resistive switching memories”, International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF 11) , January 20 to 21, Tokyo, Japan, pp. 115 to 116, 2011. (Financial supported by NSC-97-2221-E-182-051-MY3)

92.  A. Prakash, S. Maikap, G. Chen, F. Chen, M. J. Kao and M. J. Tsai, “Improvement of high k Ta2O5 based resistive switching memory using Ti interfacial layer”, International Symposium on VLSI Technology, Systems, and Applications (VLSI TSA), Hsinchu, Taiwan, pp. 66 to 67, 2011. (Financial supported by NSC-98-2221-E-182-052-MY3)

93.  W. Banerjee and S. Maikap, “IrOx nanodots in Al2O3 films for nanoscale resistive switching memory applications”, IEEE International Nano Electronics Conference (IEEE INEC), June 21 to 24, p. 37, 2011(Financial supported by NSC-97-2221-E-182-051-MY3)

94.  A. Prakash, C. I. Lin, S. Maikap, C. S. Lai, G. S. Chen, F. Chen, M.J. Kao, and M.J. Tsai, “Resistive switching memory using bilayer TaOx/WOx Films”, IEEE International Nano Electronics Conference (IEEE INEC), June 21 to 24, p. 37, 2011(Financial supported by NSC-98-2221-E-182-052-MY3)

95.  D.  Jana, W. Banerjee, A. Prakash, S. Z. Rahaman and S.  Maikap, “ReRAM  device using IrOx/Gd2O3/W structure”, IEEE International Nano Electronics Conference (IEEE INEC), June 21 to 24, p. 38, 2011(Financial supported by NSC-98-2221-E-182-052-MY3)

96.  S. Z. Rahaman, A. Sahoo, S. Maikap, H. Y. Lee, G. S. Chen, F. T. Chen, M. J. Kao, and M. J. Tsai, “Improved resistive switching memory using Cu filament in  bilayer TiOx/TaOx solid electrolytes”, IEEE International Nano Electronics Conference (IEEE INEC), June 21 to 24, p. 27, 2011(Financial supported by NSC-98-2221-E-182-052-MY3)

97.  S. Maikap, W. Banerjee, S. Manna, and S. K. Ray, “Growth of Ge nanowires for nanoscale memory applications”, International  Conference on Materials for Advanced Technologies  (ICMAT), Singapore, June 26 to July 1, p.91, 2011(Financial supported by NSC-98-2923-E-182-001-MY3)

98.  W. Banerjee and S. Maikap, W. Banerjee, S. Manna, and S. K. Ray, “Nanoscale nonvolatile memory characteristics using IrOx nanodots ”, International  Conference on Materials for Advanced Technologies  (ICMAT), Singapore, June 26 to July 1, p. 122, 2011(Financial supported by NSC-97-2221-E-182-051-MY3)

99.  A. Prakash, S. Maikap, C. S. Lai, H. Y. Lee, W. S. Chen, F. T. Chen, M. J. Kao, and M. J. Tsai,“Improvement in resistive switching parameters by selecting the SET polarity in IrOx/TaOx/WOx/W structure”, International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan, pp. 999-1000, 2011. (Financial supported by NSC-98-2221-E-182-052-MY3)

100.          A. K. Sahoo, S. Z. Rahaman, S. Maikap, H. Y. Lee, W. S. Chen, F. T. Chen, M.J. Kao, and M. J. Tsai, “Effects of Ti interfacial layer on resistive switching memory performance using Cu filament in high k Ta2O5 solid electrolyte”, International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan, pp. 1023-1024, 2011. (Financial supported by NSC-98-2221-E-182-052-MY3)

101.          W. Banerjee, S. Z. Rahaman and S. Maikap, ”Formation free low power resistive switching memory using IrOx/AlOx/W crosspoint with excellent uniformity and multi level operation”,  International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan, pp. 1017-1018, 2011. (Financial supported by NSC-97-2221-E-182-051-MY3)

102.          S. Z. Rahaman, S. Maikap, S. K. Ray, H. Y. Lee, G. S. Chen, F. T. Chen, M. J. Kao, and M.J. Tsai, “Record resistance ratio and bipolar/unipolar resistive switching scenario using novel Cu/GeOx/W memory device”, International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan, pp. 1021-1022, 2011. (Financial supported by NSC-98-2923-E-182-001-MY3)

103.          D. Jana, S. Maikap, T. C. Tien, H. Y. Lee, W. S. Chen, F. T. Chen, M. J. Kao, and M. J. Tsai, “SET polarity dependent resistive switching memory characteristics using IrOx/GdOx/WOx/W structure”, International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan, pp. 158-159, 2011. (Financial supported by NSC-98-2221-E-182-052-MY3)

104.          S. Z. Rahaman, S. Maikap, T. C. Tien, W. S. Chen, F. T. Chen, M. J. Tsai and M. J. Kao, “High performance resistive switching memory using GeOx:WOx nanoscale mixture”, International Electron Devices and Materials Symposia (IEDMS), November 17 to 18, Taipei, P D 32, 2011. (Financial supported by NSC-98-2221-E-182-052-MY3)

105.          W. Banerjee, S. Z. Rahaman, A. Prakash and S. Maikap, “Novel resistive switching memory devices using core shell IrOx nanodots in cross point structure”, International Electron Devices and Materials Symposia (IEDMS), November 17 to 18, Taipei, P D 31, 2011. (Financial supported by NSC-97-2221-E-182-051-MY3)

106.          “Excellent poster award” Y. Y. Chen, W. Banerjee, S. Maikap, and J. R. Yang, “The microstructure investigation of HfO2 thin film after post annealing”, , IUMRS ICA (12th International conference in Asia), 19 to 22 September, 2011. (Financial supported by NSC-97-2221-E-182-051-MY3)

107.          W. Banerjee and S. Maikap, “Improvement of resistive switching memory parameters using IrOx nanodots in high κ AlOx cross point”. International Symposium on VLSI Technology, Systems, and Applications (VLSI TSA), Hsinchu, Taiwan, accepted, 2012. (Financial supported by NSC-97-2221-E-182-051-MY3)

108.          S. Z. Rahaman, S. Maikap, W. S. Chen, T. C. Tien, H. Y. Lee, F. T. Chen, M. J. Kao, and M. J. Tsai, “Excellent Resistive Switching Memory: Influence of GeOx in WOx Mixture”, International Symposium on VLSI Technology, Systems, and Applications (VLSI TSA), Hsinchu, Taiwan, accepted, 2012. (Financial supported by NSC-98-2923-E-182-001-MY3)

109.          P. Kumar, A. Prakash, and S. Maikap, “pH sensor using CdSe/ZnS quantum dots”, 221st  Electrochemical Soc.(ECS) Meet., Seattle, Washington, May 6 to 10, Abs. J2-1634, 2012.

110.          S. Z. Rahaman, S. Maikap, H. Y. Lee, W. S. Chen, F. Chen, M. J. Kao, and M. J. Tsai , “Repeatable bipolar resistive switching with both polarity dependent SET/RESET scenario using Al/Cu/Ge0.2Se0.8/W Structure ”, 221st  Electrochemical Soc. Meet., Seattle, Washington, May 6 to 10, Abs. G4-1038, 2012. (Financial supported by NSC-97-2221-E-182-051-MY3)

111.          W. Banerjee, S. Maikap, D. Jana, Y. Y. Chen, and J. R. Yang, “Unipolar resistive switching memory using IrOx/Al2O3/SiO2/p Si MIS structure”, 221st  Electrochemical Soc.(ECS) Meet., Seattle, Washington, May 6 to 10, Abs. E1-732, 2012. (Financial supported by NSC-97-2221-E-182-051-MY3)

112.          D. Jana, A. Prakash, W. Banerjee, and S. Maikap, “Forming free resistive switching memory using IrOx/GdOx/W crossbar structure”, 221st  Electrochemical Soc.(ECS) Meet., Seattle, Washington, May 6 to 10, Abs. E1-0734, 2012. (Financial supported by NSC-98-2221-E-182-052-MY3)

113.          A. Prakash, S. Maikap, W. S. Chen, H. Y. Lee, F. Chen, M. J. Kao, and M. J. Tsai, “Impact of high κ TaOx thickness on the resistive memory properties in IrOx/TaOx/WOx/W structure”, 221st  Electrochemical Soc.(ECS) Meet., Seattle, Washington, May 6 to 10, Abs. E1-0724, 2012. (Financial supported by NSC-98-2221-E-182-052-MY3)

114.          S. Maikap and S. Z. Rahaman, “Bipolar resistive switching characteristics using Al/Cu/GeOx/W memristors”, 221st  Electrochemical Soc.(ECS) Meet., Seattle, Washington, May 6 to 10, Abs. E5-0889, 2012. (Financial supported by NSC-97-2221-E-182-051-MY3)

115.          S. Maikap and S. Z. Rahaman, “Bipolar resistive switching memory characteristics using Al/Cu/GeOx/W memristor”, ECS Transactions, vol. 45, 2012. (Financial supported by NSC-98-2923-E-182-001-MY3)

116.          D. Jana, A. Prakash, and S. Maikap, “Forming free resistive switching memory characteristics  using IrOx/GdOx/W crossbar structure”, ECS Transactions, vol. 45, 2012. (Financial supported by NSC-98-2221-E-182-052-MY3)

117.          W. Banerjee, S. Maikap, Y. Y. Chen, and J. R. Yang, “Unipolar resistive switching memory characteristics using IrOx/Al2O3/SiO2/p Si MIS structure”, ECS Transactions, vol. 45, 2012. (Financial supported by NSC-97-2221-E-182-051-MY3)

118.          A. Prakash, S. Maikap, W. S. Chen, H. Y. Lee, F. T. Chen, M. J. Kao, and M. J. Tsai,Impact of high κ TaOx thickness on the switching mechanism of  resistive memory device using IrOx/TaOx/WOx/W structure”, ECS Transactions, vol. 45, 2012. (Financial supported by NSC-98-2221-E-182-052-MY3)

 

 

Important Conference Papers:

1.      M. H. Lee, P. S. Chen, W. C. Hua, C. Y. Yu, Y. T. Tseng, S. Maikap, Y. M. Hsu, C. W. Liu, S. C. Lu, W. Y. Hsieh, and M. J. Tsai, “Comprehensive low frequency and RF noise characteristics in strained Si NMOSFETs”, IEDM (International Electron Devices Meeting) Tech. Dig.,    Washington, D.C., pp. 69-72, 2003.

2.      S. Maikap, M. H. Liao, F. Yuan, M. H. Lee, C. F. Huang, S. T. Chang and C. W. Liu, “Packagestrain enhanced device and circuit performance”, IEDM (International Electron Devices        Meeting) Tech. Dig., San Francisco, CA, pp. 233-236, 2004.

 

Patent:

1.      C. H. Lin, P. J. Tzeng, and S. Maikap, “Method of fabricating metal compound dots dielectric piece”, Pub. No. US 2008/0095931 A1, April 24, 2008.

 

Invited Talks:

1.      S. Maikap, “Memory Technologies”, November 19, 2007, Department of Materials Science Engineering, National Taiwan University, Taiwan

2.      S. Maikap, “Atomic Layer Deposited High k and Metal Nanocrystals for Nanoscale Nonvolatile Memory Applications”, October 15, 2008, Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur, India.

3.      S. Maikap, “Atomic Layer Deposited High k Multilayer Quantum Wells for Nanoscale Nonvolatile Memory Applications”, November 20, 2008, Institute of Electro Optical Science and Technology, National Taiwan Normal University, Taiwan.

4.      S. Maikap, “Quantum dot based memories”, International Workshop on Emerging Non-volatile Memories, July 31st, 2009, INFM/CNR, Genova, Italy.

5.      S. Maikap and S. Z. Rahaman, “Bipolar resistive switching memory using Cu filament in Ge1-xSex solid electrolytes”, 1st International Workshop on Conductive Bridge Memory (CBRAM), April 23rd -24th, 2010, Stanford University, California.

6.      S. Maikap and S. Z. Rahaman, “ Germanium based resistive switching memories”, Symposium on Nano Device Technology (SNDT)”, April 21-22, p. 19, 2011, Hsinchu, Taiwan.

7.      S. Maikap, “ReRAM and CBRAM devices using AlOx and Ge based materials”, 1st International Workshop on Resistive RAM”, October 20th and 21st, 2011, IMEC, Leuven, Belgium.

8.      S. Maikap, W. Banerjee, and S. Z. Rahaman, “Atomic layer deposited nanoscale high κ/metal multilayers for CMOS and memory applications”, The 6th DAE BRNS National Symposium on Pulsed Laser Deposition of Thin Films and Nanostructured Materials (PLD-2011), November 9-11, 2011, Bangaluru, India.

9.      S. Maikap, S. Z. Rahaman, W. Banerjee, and A. Prakash, “Germanium based materials for low power nanoscale resistive switching memory applications”, XVIth International Workshop on Physics of Semiconductor Devices (IWPSD), December 19-22, 2011, IIT Kanpur, India.

10.  S. Maikap and S. Z. RahamanGe based resistive switching memories”, February 1, 2012, Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur, India.

 

Book Chapter:

1.      S. K. Ray, R. Mahapatra, G. S. Kar, and S. Maikap, “Research Signpost”, Applied Physics in the 21st Century”,  Dilute carbon alloy group IV semiconductor heterostructures for advanced MOSFET devices, ISBN: 978-81-308-0238-1, pp. 315-370, 2008.

 

Awards:

1.      “Excellent Research and Innovation Award” S. Maikap, In recognition of participation in    Project “SiGe Buffer Free Compressively Strained Ge PFET on Si with Si Epi Passivation” Electronics  Research & Service Organization (ERSO), Industrial Technology Research            Institute (ITRI),  Hsinchu, Taiwan, 28th June, 2005.

2.      “Excellent paper award” S. Maikap, P. J. Tzeng, S. S. Tseng, C. H. Lin, H. Y. Lee, C. C.     Wang, L. S. Lee, T. C. Tien, S. C. Lo,  P. W. Li, M. J. Tsai, “High density and uniform ALD    TiN nanocrystal flash memory devices with large memory window and good retention”, Int.     Electron Devices and Materials Symposia (IEDMS), pp. 85-86, Tainan, Taiwan, 2006.

3.      “Excellent poster award” Yi-Yan Chen, Writam Banerjee, S. Maikap, and Jer-Ren Yang, “The microstructure investigation of HfO2 thin film after post-annealing”, , IUMRS-ICA (12th International conference in Asia), 19 to 22 September, 2011. (Financial supported by NSC-97-2221-E-182-051-MY3)

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