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長庚大學 電子工程學系
勤勞樸實 追求卓越
分類清單
首頁 > 成員簡介 > 教師
林瑞明教授
林瑞明
教授
 林瑞明老師
組別
化合物半導體
電話
5790
Email
rmlin@mail.cgu.edu.tw
實驗室
化合物半導體磊晶實驗室(工學院1)
學歷
·         台灣大學電機工程博士 ( 1997 )
·          
經歷
 
·         長庚大學電子系教授 ( 2013/08 -   )
          長庚大學電子系副教授  2002/08 -  2013/07
    長庚大學技術移轉中心主任2001/08 -2006/07
   長庚大學電子系助理教授1999/08 -2002/07
  國科會副研究員1997/09 - 1999/08
·        
開授課程
·         光電材料、化合物半導體、光電半導體元件
專長與研究領域
·         氮化合物磊晶成長技術
·        
簡歷
Ray-Ming Linwas born in Taiwan. Dr. Ray-Ming Lin received Ph.D. degrees in Electrical Engineering from National Taiwan University, Taiwan, Republic of China in 1997. During his Ph.D. work, he majored in the MBE growth and device application of metamorphic InGaAs/GaAs and InAlAs/GaAs buffer layers, quantum dot light emitting diode, room temperature infrared sensor. 1997~1999 he joined the planning & evaluation division at National Science Council as a assistance research fellow. Since August 1999, he has been with the Department of Electronic Engineering of the University of Chang Gung University at Tao-Yuan, Taiwan, Republic of China, where he is presently a Assistant Professor. Since August 2001, Professor Lin has been the Director of Right and Technology Transfer Center at the University of Chang Gung University. His current research interests are in the areas of MOCVD technology development for the growth of N-based heterostructures, in-situ fabrication of low-dislocation density, high-efficiency optoelectronic and high speed device structures.
著作列表
 
REFEREED PAPER:
1.         M. S. Huang, L. B. Chang and Ray-Ming Lin, "A Study of the Direct-Connecting TJS-LED Fabrication Processes", Journal of CCIT vol. 20, No. 2, pp. 15-22 (1992).
2.        Yi-Jen Chan, Ming-Ta Yang, Jen-Inn Chyi, Jia-Lin Shieh and Ray-Ming Lin, "AlGaAs/GaAs Heterostructure Field-Effect Transistors (HFMTs) Grown by Molecular Beam Epitaxy", Proc. Natl. Sci. Counc. ROC (A), vol. 17, pp. 428-432 (1993).
3.        M.-T. Yang, Y.-J. Chan, C.-H. Chen, J.-I. Chyi, Ray-Ming Lin, and J.-L. Shieh, "The Characteristics of Pseudomorphic AlGaAs/InxGa1-xAs (0<x<0.25) Doped-channel Field-Effect Transistors", J. Appl. Phys., 76, pp. 2494-2498, (1994).
4.        J.-I. Chyi, J.-L. Shieh, Ray-Ming Lin, T.-E. Nee, and J.-W. Pan, "Molecular Beam Epitaxial Growth of InxAl1-xAs on GaAs", Appl. Phys. Lett., 65, pp. 699-701 (1994).
5.        J.-L. Shieh, J.-I. Chyi, R.-J. Lin, Ray-Ming Lin, and J.-W. Pan, "Band offsets of In0.3Ga0.7As/In0.29Al0.71As Hetrojunction Grown on GaAs Substrate", Electron Lett. 30, pp. 2172-2173, (1994).
6.        J.-I. Chyi, J.-L. Shieh, C.-S. Wu, Ray-Ming Lin, J.-W. Pan, and Y.-J. Chan, "Characteristics of In0.3Ga0.7As/In0.29Al0.71As Heterostructures Grown on GaAs Using InAlAs Buffers", Jpn J. Appl. Phys. Part 2, 33, pp. L1574-1576 (1994).
7.        H.-P. Hwang, J.-L. Shieh, Ray-Ming Lin, J.-I. Chyi, S.-L. Tu, C.-K. Peng, and S.-J. Yang, "Unstrained In0.3Ga0.7As/In0.29Al0.71As Resonantt Tunneling Diodes Grown on GaAs", Electron Lett., 30, pp. 826-828 (1994).
8.        R.-H. Yuang, J.-L. Shieh, Ray-Ming Lin, and J.-I. Chyi, "GaAs Metal-Semiconductor- Metal Photodetectors with AlGaAs Cap and Buffer Layers", J. Chinese Inst. Engineers, Vol. 18, No. 3, 445 (1995).
9.        J.-I. Chyi, J.-L. Shieh, R.-J. Lin, J.-W. Pan, and Ray-Ming Lin, "Schottky Barrier Heights of InxAl1-xAs (0<x<0.35) Epilayers on GaAs", J. Appl. Phys., 77, pp. 1813~1815 (1995).
10.     C. H. Kuan, Ray-Ming Lin, Shiang -Feng Tang, and Tai-Ping Sun, "Analysis of the dark current in the bulk of InAs diode detectors", J. Appl. Phys. 80, No 9, pp. 5454-5458 (1996).
11.     J. I. Chyi, J. L. Shieh, J. W. Pan and Ray Ming Lin, "Material properties of compositional graded InxGa1-xAs and InxAl1-xAs epilayers grown on GaAs substrates", J. Appl. Phys. 79 (11), pp. 8367-8370 (1996).
12.     Ray-Ming Lin, Shiang -Feng Tang, Si-Chen Lee , C. H. Kuan, Gin-Shiang Chen, Tai-Ping Sun and Jyh-Chiarng Wu, "Room Temperature Unpassivated InAs p-i-n Photodetectors Grown by Molecular Beam Epitaxy", IEEE Trans. Electron device, 44, No 2, pp. 209-213 (1997).
13.     Biing-Der Liu, Ray-Ming Lin, Si-Chen Lee and Tai Ping Sun, "InAs Room Temperature Infrared Photoconductive Detectors Grown by Molecular Beam Epitaxy", J. Vac. Sci. Technol. B, 15, No 2, pp. 321-324 (1997).
14.     Ray-Ming Lin and Si-Chen Lee, "Novel Method for Monitoring the Surface Roughness during Molecular Beam Epitaxy", Jpn J. Appl. Phys., 36, pp. 984-986 (1997).
15.     Yuan-Tung Dai, Yang-Fang Chen, Ray-Ming Lin, Si-Chen Lee and Hao-Hsiung Lin, "Photoluminescence and photothermal deflection spectroscopy of InAs quantum dot superlattice grown on GaAs by MBE" Jpn J. Appl. Phys., 36, Iss 6B, pp. L811-L814 (1997).
16.     Yuan-Tung Dai, J. C. Fan, Yang-Fang Chen, Ray-Ming Lin, Si-Chen Lee and Hao-Hsiung Lin, "Temperature dependence of photoluminescence spectra in InAs/GaAs quantum dot superlattices with large Thicknesses", J. Appl. Phys., 82, Iss 9, pp. 4489-4492 (1997).
17.     Ming-Jer Jeng, Hung-Thung Wang, Liann-Be Chang, Yi-Chang Cheng, Cheng-Min Lee, and Ray-Ming Lin, "Barrier Height Enhancement of Ni/n-type InP Schottky Contacts Using a Thin Praseodymium Interlayer", Jpn. J. Appl. Phys, vol.38, pp.1382-1384 (1999).
18.     Ray-Ming Lin, Shiang -Feng Tang, and C. H. Kuan, "Study of current leakage in InAs p-i-n photodectors", J. Vac. Sci. Technol. B, vol.18(6), pp. 2624-2626 (2000).
19.     Ming-Jer Jeng, Hung-Thung Wang, Liann-Be Chang, and Ray-Ming Lin, "Surface Passivation Using P2S5/(NH4)2Sx and Hydrogen Fluoride Solutions on Ag/n-InAs and Ag/n-InSb Schottky Diodes", Jpn. J. Appl. Phys, 40, Part 1, No. 2A, pp.562-564 (2001).
20.     Ray-Ming Lin, Shiang -Feng Tang, Si-Chen Lee and C. H. Kuan, "Improvement of current leakage in the InAs photodetector by Molecular Beam Epitaxy", J. Crystal Growth, 227-228, pp. 167-171 (2001).
21.     Ray-Ming Lin, Si-Chen Lee, Hao-Hsiung Lin, Yuan-Tung Dai and Yang-Fang Chen, "Blueshift of Photoluminescence Peak in ten periods InAs Quantum Dots Superlattice", J. Crystal Growth, 227-228, pp. 1034-1038 (2001).
22.     Ray-Ming Lin, Tzer-En Nee, Mei-Ching Tsai, Yuan-Hao Chang, Ping-Lin Fan, and Rong-Seng Chang, "Thickness Dependent Renormalization of Strain Effects on Self-Organized InAs Quantum Dots Grown on GaAs”, J. Vac. Sci. Technol. A 20(3), pp. 1125-1127 (2002).
23.     Tzer-En Nee, Ray-Ming Lin, Li-Zen Hsieh and Liann-Be Chang , "Growth and Coalescence Evolution of InAs on GaAs by Molecular Beam Epitaxy ", J. Vac. Sci. Technol. A , 20(3), pp. 1128-1131 (2002).
24.     Tzer-En Nee, Kuo-Tai Chien, Yi-Lun Chou, Li-Chang Chou, Chung-Han Lin, Ray-Ming Lin, Bor-Ren Fang and Shi-Shya Chang, "Effect of Current Spreading on Luminescence Improvement in Selectively Oxidized AlGaInP Light-Emitting Diodes", J. Vac. Sci. Technol. B , 21(3), pp. 1157-1160 (2003).
25.     Ping-Yu Kuei, Li-Zen Hsieh, Liann-Be Chang, Ming-Jer Jeng, and Ray-Ming Lin, "On the Reflectivity Spectrum of Implanted AlGaAs Distributed Bragg Reflector", Jpn. J. Appl. Phys, 42, Part 1, No. 10, October, pp.562-564 (2003).
26.     Tzer-En Nee, Chao-Ching Cheng and Ray-Ming Lin, "Phonon-Assisted Auger Recombination Processes in InGaAs/GaAs Single-Quantum-Well Lasers", Jpn. J. Appl. Phys, 43, No. 3, pp.890-893 (2004).
27.     L. B. Chang, P. Y. Kuei, L. Z. Hsieh, L. Y. Chang, and Ray-Ming Lin, "Study of AlGaInP multiquantum-well/double heterostructure light-emitting diodes with In-added GaP window layer regrown by antimony-based liquid phase epitaxy", J. Vac. Sci. Technol. A , 22 , pp.807-810 (2004).
28.     Tai-Ping Sun, Shih-Yen Lin, San-Te Yang, Cheng-Der Chiang, Ya-Tung Cherng, Hui-Tang Shen, Tzer-En Nee, Ray-Ming Lin, Min-Yu Hsu, "Surface Morphology and Photoluminescence of InAs Quantum Dots Grown on [110]-Oriented Streaked Islands Under Ultra-low V/III Ratio", IEEE Trans. On NANOTECHNOLOGY, 3, No. 2, June (2004).
30.     Lung-Chien Chen, Hsin-Nan Chen, and, Ray-Ming Lin, “Growth and characteristics of GaNxP1-x alloys by magnetron reactive sputtering on GaN” ", J. Crystal Growth (2005).
31.     Tzer-En Nee, Ya-Fen Wu, and Ray-Ming Lin, "Effect of carrier hopping and relaxing on photoluminescence line shape in self-organized InAs quantum dot heterostructures", J. Vac. Sci. Technol. B , May/June (2005).
32.     Ray-Ming Lin, Chung-Han Lin, Jen-Cheng Wang, Tzer-En Nee, Bor-Ren Fang, and Ruey-Yu Wang, “Study of Electroluminescence Quenching in the InGaN/GaN Blue Diode with Multi-Quantum Barrier Structure” J. Crystal Growth, 278, pp.421-425 (2005).
33.      Tzer-En Nee, Jen-Cheng Wang, Chung-Han Lin, Ray-Ming Lin, Bor-Ren Fang and Ruey-Yu Wang, "Cross sections for the investigation of the electroluminescence excitation of InGaN/GaN quantum wells in blue light-emitting diodes with multiquantum barriers", J. Vac. Sci. Technol. B , pp.966-969 May/June (2005).
34.     Tzer-En Nee, Jen-Cheng Wang, Hui-Tang Shen, Chao-Ching Cheng, Ray-Ming Lin*, "Optical investigation of the interdot carrier transfer process in InAs/GaAs quantum-dot heterosystems", J. Vac. Sci. Technol. B , pp.34-37 January/February (2006).
35.     Tzer-En Nee, Hui-Tang Shen, Jen-Cheng Wang, and Ray-Ming Lin*, “Characterization for the Berthelot-type behaviors of InGnN/GaN semiconductor heterosystems”, J. Crystal Growth, pp.287, 468-471 (January 2006)
36.     Yen-Lin Lai, Chuan-Pu Liu, Yung-Hsiang Lin, Tao-Hung Hsueh, Ray-Ming Lin, Dong-Yuan Lyu, Zhao-Xiang Peng and Tai-Yuan Lin, "Origins of efficient green light emission in phase-separated InGaN quantum wells", Nanotechnology, 17, pp.3734-3739 (2006)
37.Ray-Ming Lin*, Jen-Chih Li, Yi-Lun Chou, and Meng-Chyi Wu, "Using the Taguchi Method to Improve the Brightness of AlGaInP MQW LED by Wet Oxidation“, IEEE PHOTONICS TECHNOLOGY LETTERS, Vol. 18, No. 15, AUGUST 1, PP. 1642-1644, (2006).
38.Yen-Lin Lai, Chuan-Pu Liu, Yung-Hsiang Lin, Ray-Ming Lin, Dong-Yuan Lyu, Zhao-Xiang Peng and Tai-Yuan Lin, “Effects of the material polarity on the green emission properties of InGaN/GaN multiple quantum wells”, APPLIED PHYSICS LETTERS 89, pp.151906, (2006).
39. Ray-Ming Lin*, Jen-Chih Li, Yi-Lun Chou, Kuo-Hsing Chen, Yung-Hsiang Lin, Yuan-Chieh Lu, Meng-Chyi Wu, Hung Hung and Wei-Chi Lai, “Improving the luminescence of InGaN/GaN blue LEDs through selective ring-region activation of the Mg-doped GaN layer”, IEEE PHOTONICS TECHNOLOGY LETTERS, Vol. 19, No. 2, JUNE 15, PP. 928-930 (2007).
40. H. Hung, C. H. Chen, S. J. Chang, K. Kuan, R. M. Lin, C. H. Liu, “Kinetics of persistent photoconductivity in InGaN epitaxial films grown by MOCVD” J. Crystal Growth, 298, pp.246-250 (2007).
41. H. Hung, S. J. Chang,, Y. C. Lin, M. H. Wu, H. Kuan and R. M. Lin, “AlGaN MSM Photodetectors with recess etched LT-AlGaN cap layer”, IET Optoelectronics ,Vol.1, pp147-149 (2007).
42. S. J. Chang, H. Hung, Y. C. Lin, H. Kuan, R. M. Lin, C. H. Chen, and M. H. Wu, “AlGaN Ultraviolet Metal-Semiconductor-Metal Photodetectors with Low-Temperature-Grown Cap Layers”, Jpn. J. Appl. Phys., Vol. 46, No. 4B, pp. 2471-2473, April (2007).
43. Chia-Lung Tsai, Yi-Lun Chou, Ray-Ming Lin, Feng-Ming Lee,  Meng-Chyi Wu, Sun-Chien Ko, “An alternative method to fabricate the planar-type resonant-cavity light-emitting diodes by using silicon oxide for short-reach communications”, Materials Science in Semiconductor Processing, Vol. 10, n 6, p. 235-240, December (2007)
44. Ray-Ming Lin*, Yuan-Chieh Lu, Yi-Lun Chou, Guo-Hsing Chen, Yung-Hsiang Lin, and Meng-Chyi Wu, “Enhanced Characteristics of blue InGaN/GaN Light-Emitting Diodes by using selective activation to modulate the lateral current spreading length ”, APPLIED PHYSICS LETTERS, Vol. 92, July 1, p. 261105 (2008).
45. Hsien-Chin Chiu, Chih-Wei Yang, Yung-Hsiang Lin, Ray-Ming Lin, Liann-Be Chang, Kuo-Yang Horng, “Device Characteristics of AlGaN/GaN MOS-HEMTs Using High-k Praseodymium Oxide Layer” , IEEE ELECTRON DEVICE, Vol. 55, No. 11, November, p. 3305 (2008).
46. Xinhe Zheng, Ray-Hua Horng, Dong-Sing Wuu, Mu-Tao Chu, Wen-Yih Liao, Ming-Hsien Wu, Ray-Ming Lin, and Yuan-Chieh Lu, “High-quality InGaN/GaN heterojunctions and their photovoltaic effects”, Appl. Phys. Lett. Vol.93, 29 December, 261108 (2008).
47. Ray-Ming Lin*, Yi-Lun Chou,Wan-Ching Tseng, Chia-Lung Tsai, Jen-Chih Li, and Meng-Chyi Wu, “Thermal Stability for Reflectance and Specific Contact Resistance of Ni/Ag-Based Contacts on p-Type GaN”, Electrochemical and Solid-State Letters, 12 (9), Jun, H315  (2009).
48. Ray-Hua Horng, Shih-Ting Lin, Yu-Li Tsai, Mu-Tao Chu, Wen-Yih Liao, Ming-Hsien Wu, Ray-Ming Lin, and Yuan-Chieh Lu,” Improved Conversion Efficiency of GaN/InGaN Thin-Film Solar Cells”, IEEE ELECTRON DEVICE LETTERS, 30 (7), JULY (2009)
49. Ray-Ming Lin*, Yuan-Chieh Lu, Sheng-Fu Yu, YewChung Sermon Wu, Chung-Hao Chiang, Wen-Ching Hsu, and Shoou-Jinn Chang, “Enhanced Extraction and Efficiency of Blue Light Emitting Diodes Prepared Using Two-Step-Etched Patterned Sapphire Substrates”, Journal of the Electrochemical Society, 156 (11), Oct, p.874-H876 (2009)
50. Hsien-Chin Chiu, Chao-Wei Lin, Chao-Hung Chen, Chih-Wei Yang, Che-Kai Lin, Jeffrey S Fu, Liann-Be Chang, Ray-Ming Lin, Kuang-Po Hsueh “Low hysteresis dispersion La2O3 AlGaN/GaN MOS-HEMTs”, Journal of the Electrochemical Society, 157 (2), p H160-H164 ( 2010)
51. Ray-Ming Lin*, Yung-Hsiang Lin, Chung-Hao Chiang, Mu-Jen Lai, Yi-Lun Chou, Yuan-Chieh Lu, Shou-Yi Kuo, Bor-Ren Fang, and Meng-Chyi Wu, “Inserting a low-temperature n-GaN underlying layer to separate nonradiative recombination centers improves the luminescence efficiency of blue InGaN/GaN LEDs”, Microelectronics Reliability, 50, p. 679–682 (2010).
52. Ming-Jer Jeng, Te-Wen Su, Yu-Lin Lee, Yuan-Hsiao Chang, Liann-Be Chang, Ray-Ming Lin, Jhong-Hao Jiang, and Yuan-Chieh Lu, “Effect of Silicon Doping on Performance of 30-Pair InxGa1-xN/GaN Quantum Well Solar Cells”, Jpn. J. Appl. Phys., Vol. 49, pp. 052302, May (2010).
53. Mu-Jen Lai, Liann-Be Chang, Tzu-Tao Yuan, and Ray-Ming Lin, “Improvement of crystal quality of AlN grown on sapphire substrate by MOCVD with increasing hydrogen flow rate”, Crystal Research and Technology, 45,No. 7, 703-706 (2010).
54. Mu-Jen Lai, Liann-Be Chang, Ray-Ming Lin*, and Chou-Shuang Huang, “Improvement of External Quantum Efficiency in InGaN-Based Double-Heterostructure Light-Emitting Diodes”, Applied Physics Express, 3, 072102 (2010).
55. Ray-Ming Lin, Mu-Jen Lai, Liann-Be Chang, and Chou-Hsiung Huang, “Effect of an asymmetry AlGaN barrier on efficiency droop in wide-well InGaN double-heterostructure light-emitting diodes”, Appl. Phys. Lett. Vol.97(18), 181108, November (2010).
56. Liann-Be Chang, Mu-Jen Lai, Ray-Ming Lin*, and Chou-Hsiung Huang, “Effect of electron leakage on efficiency droop in wide-well InGaN-based light-emitting diodes”, Applied Physics Express, 4, 012106 (2011).
57. Yi-Lun Chou,Ray-Ming Lin, Min-Hung Tung, Chia-Lung Tsai, Jen-Chih Li,  I.-Chun Kuo, Meng-Chyi Wu, ”Improvement of surface emission for GaN-based light-emitting diodes with a metal-via-hole structure embedded in a reflector”, IEEE Photonics Technology Letters, v 23, n 7, p 393-395, (2011)
58. Liann Be Chang, Atanu Das, Ray Ming Lin*, Siddheswar Maikap, Ming Jer Jeng and Shu Tsun Chou, “An Observation of Charge Trapping Phenomena in GaN/AlGaN/Gd2O3/Ni-Au Structure”Appl. Phys. Lett. Vol.98(1), 222106 June2, (2011).
 

 

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