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長庚大學 電子工程學系
勤勞樸實 追求卓越
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潘同明教授

潘同明

教授

組別

積體電路製程

電話

3349

Email

tmpan@mail.cgu.edu.tw

實驗室

薄膜量測實驗室(工學院8樓E0816)

學歷

  • 交通大學電子工博士 ( 2001/8 )  
  • 交通大學電子工程碩士 ( 1998/8 )
  • 交通大學電子工程學士 ( 1997/8 )  

經歷

  • 聯電 ( 2000 - 2002 )
  • 長庚大學助理教授 ( 2004 -2009)
  • 長庚大學教授 ( 2009 )

開授課程

98學年度第二學期

專長與研究領域

  • 積體電路設計薄膜元件技術
  • 半導體元件物理
  • 元件可靠性分析
  • 半導體材料

簡歷

 

Tung-Ming Pan was born in Taipei, Taiwan, 1970. He received the B. S. degree from the Department of Electronics Engineering, National Chiao-Tung University (NCTU), Taiwan, R. O. C., in 1997 and the Ph. D. degree from the Institute of Electronics, NCTU, in 2001.

  From 2000 to 2002, he joined the LOGIC Development Department, Technology and Process Development Division (TD), UMC, as a Principal Engineer. He was engaged in developing the 0.1um device and process. Then, he transferred to the Reliability Engineering, Quality and Reliability Assurance Division. He was responsible to the 0.1um device reliability and quality. In 2002, he jointed the mixed signal team of Elansat Tech. Corp. as a Senior Engineer. He was engaged to design high-speed analog-to digital converter (ADC) and digital-to-analog converter (DAC). In 2004, he joined the faculty at Chang Gung University as an assistant professor in the Department of Electronics Engineering, and became a professor in 2009. He has published more than 90 technical papers, and is author or co-author of 6 patents. His currently research areas focus on the high-k gate dielectric materials, nonvolatile memories, thin-film transistors (TFTs), nano CMOS devices and technologies, reliability of semiconductor devices, biosensor materials and devices.

Dr. Pan won the first prize of the Lam Ph D. Dissertation Award in 2001.

 

著作列表

International Journal
*: Corresponding Author, IF: Impact Factor, RF: SCI Rank Factor N/M, and CN: SCI Cited Number
[1]   Tung Ming Pan, Tan Fu Lei, Chao Chyi Chen, Tien Sheng Chao, Ming Chi Liaw, Wen Lu Yang, Ming Shih Tsai, C. P. Lu and W. H. Chang, "Novel cleaning solutions for polysilicon film post chemical mechanical polishing," IEEE Electron Devices Lett., vol. 21, no. 7, pp. 338-340, 2000. (SCI, IF:2.605, RF:21/245, and CN:12)
[2]   Tung Ming Pan, Tan Fu Lei, and Tien Sheng Chao, "Robust ultra-thin oxynitride dielectrics by NH3 nitridation and N2O RTA treatment," IEEE Electron Devices Lett., vol. 21, no. 8, pp. 378-380, 2000. (SCI, IF:2.605, RF:21/245, and CN:10)
[3]   Tung Ming Pan, Tan Fu Lei, Tien Sheng Chao, Kuo Lih Chang, and Kuang Chien Hsieh, "High quality ultra-thin CoTiO3 high-k gate dielectrics," Electrochem. Solid-State Lett., vol. 3, no. 9, pp. 433-434, 2000. (SCI, IF:1.837, RF: 42/192, and CN:6)
[4]   Tung Ming Pan, Tan Fu Lei, Tien Sheng Chao, Ming Chi Liaw, and Chih Peng Lu, "Optimum condition of novel one-step cleaning solutions for pre-gate oxide cleaning using the robust design methodology," Jpn. J. Appl. Phys., vol. 39, no. 10, pp. 5805-5808, 2000. (SCI, IF:1.138, RF:57/105, and CN:1)
[5]   Tung Ming Pan*, Tan Fu Lei, Wen Luh Yang, Chun Ming Cheng, and Tien Sheng Chao, "High quality interpoly-oxynitride grown by NH3 nitridation and N2O RTA treatment," IEEE Electron Devices Lett., vol. 22, no. 2, pp. 68-70, 2001. (SCI, IF:2.605, RF:21/245, and CN:4)
[6]   Tung Ming Pan, Tan Fu Lei and Tien Sheng Chao, "High-k CoTiO3 dielectrics formed by oxidation of sputtered Co/Ti or Ti/Co films," Appl. Phys. Lett., vol. 78, no. 10, pp. 1439-1441, 2001. (SCI, IF:3.554, RF:14/105, and CN:5)
[7]   Tung Ming Pan, Tan Fu Lei and Tien Sheng Chao, "Comparison of ultrathin CoTiO3 and NiTiO3 high-k gate dielectrics," J. Appl. Phys., vol. 89, no. 6, pp. 3447-3452, 2001. (SCI, IF:2.072, RF:24/105, and CN:9)
[8]   Tung Ming Pan,Tan Fu Lei, Huang Chun Wen, and Tien Sheng Chao, "Characterization of ultrathin oxynitride (18-21 Å) gate dielectrics by NH3 nitridation and N2O RTA treatment," IEEE Trans. on Electron Devices, vol. 48, no. 8, pp. 907-912, 2001. (SCI, IF:2.445, RF:26/245, and CN:9)
[9]   Tung Ming Pan, Tan Fu Lei, Fu Hsiang Ko, Tien Sheng Chao, Ming Chi Liaw, and Chih Peng Lu, "One-step cleaning solution to replace the conventional RCA two-step cleaning recipe for pre-gate oxide cleaning," J. Electrochem. Soc., vol. 148, no. 6, pp. G315-G320, 2001. (SCI, IF:2.241, RF:1/16, and CN:15)
[10]   Wen Luh Yang, Tien Sheng Chao, Chun-Ming Cheng, Tung Ming Pan, and Tan Fu Lei, "High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices," IEEE Trans. on Electron Devices, vol. 48, no. 7, pp. 1304-1309, 2001. (SCI, IF:2.445, RF:26/245, and CN:4)
[11]   Tung Ming Pan*, Chao Hsin Chien, Tan Fu Lei, Tien Sheng Chao, and Tiao Yuan Huang, "Electrical characteristics of thin cerium oxide film on silicon substrate by reactive DC sputtering," Electrochem. Solid-State Lett., vol. 4, no. 9, pp. F15-F17, 2001. (SCI, IF:1.837, RF:58/212, and CN:6)
[12]   Tung Ming Pan, Tan Fu Lei, Fu Hsiang Ko, Tien Sheng Chao, Tzu Huan Chiu, Ying Hao Lee, and Chih Peng Lu, "Comparison of novel cleaning solutions with various chelating agents for post-CMP cleaning on poly-Si film," IEEE Trans. on Semiconduct. Manufact., vol. 14, no. 11, pp. 365-371, 2001. (SCI, IF:1.007, RF:122/245, and CN:3)
[13]   Tung Ming Pan, Tan Fu Lei, Fu Hsiang Ko, Tien Sheng Chao, Ming Chi Liaw, and Chih Peng Lu, "Performance evaluation of cleaning solutions enhanced with tetraalkylammonium hydroxide substituents for post-CMP Cleaning on poly-Si film," J. Electrochem. Soc., vol. 149, no. 6, pp. G336-G342, 2002. (SCI, IF:2.241, RF:1/16, and CN:2)
[14]   Tung-Ming Pan*, Hsiu-Shan Lin, Main-Gwo Chen, Chuan-Hsi Liu, and Yih-Jau Chang, "Comparison of electrical and reliability characteristics of different 14Å oxynitride gate dielectrics," IEEE Electron Devices Lett., vol. 23, no. 7, pp. 416-418, 2002. (SCI, IF:2.605, RF:21/245, and CN:6)
[15]   T. S. Chao, C. H. Yeh, T. M. Pan, T. F. Lei, and Y. H. Li, "One step single cleaning solution for CMOS processes," J. Electrochem. Soc., vol. 150, no. 9, pp. G503-G507, 2003. (SCI, IF:2.241, RF:1/16, and CN:1)
[16]   Tung Ming Pan, Tan Fu Lei, Fu Hsiang Ko, Tien Sheng Chao, Tzu Huan Chiu, and Chih Peng Lu, "Novel one-step aqueous solutions to replace pregate oxide cleans," IEEE Trans. on Semiconduct. Manufact., vol. 17, no. 8, pp. 470-476, 2004. (SCI, IF:1.007, RF:122/245, and CN:4)
[17]   Tung-Ming Pan*, Fu-Hsiang Ko, Tien-Sheng Chao, Chieh-Chuang Chen, and Kuei-Shu Chang-Liao, "Effects of metallic contaminants on the electrical characteristics of ultrathin gate oxides," Electrochem. Solid-State Lett., vol. 8, no. 8, pp. G201-G203, 2005. (SCI, IF:1.837, RF:58/212, and CN:7)
[18]   Tung-Ming Pan* and Chuan-Hsi Liu, "Reliability scaling limit of 14Å oxynitride gate dielectrics by different processing treatments," J. Electrochem. Soc., vol. 152, no. 11, pp. G851-G855, 2005. (SCI, IF:2.241, RF:1/16, and CN:1)
[19]   Tung-Ming Pan* and Chuan-Hsi Liu, "Mechanism of dynamic negative bias temperature instability of pMOSFETs with 13Å oxynitride gate dielectric," Electrochem. Solid-State Lett., vol. 8, no. 12, pp. G348-G351, 2005. (SCI, IF:1.837, RF:58/212, and CN:3)
[20]   Tung-Ming Pan*, Chao-Sung Liao, Hui-Hsin Hsu, Chun-Lin Chen, Jian-Der Lee, Kuan-Ti Wang, and Jer-Chyi Wang, "Excellent frequency dispersion of thin gadolinium oxide high-k gate dielectrics," Appl. Phys. Lett., vol. 87, no. 26, p. 262908, 2005. (SCI, IF: 3.554, RF:14/105, and CN:16)
[21]   Tung-Ming Pan* and Chia-Cheng Yang, "Electrical characterization of 256 Mbit DRAM with carbon-implanted drain," Electrochem. Solid-State Lett., vol. 9, no. 1, pp. G7-G9, 2006. (SCI, IF:1.837, RF:58/212, and CN:0)
[22]   Tung-Ming Pan*, "Electrical characterization of 13Å in-situ steam generated oxynitride gate dielectrics," Electrochem. Solid-State Lett., vol. 9, no. 2, pp. G66-G68, 2006. (SCI, IF:1.837, RF:58/212, and CN:0)
[23]   Tung-Ming Pan*, "Excellent electrical and reliability characteristics of 11Å oxynitride gate dielectrics by remote plasma nitridation treatment," Appl. Phys. Lett., vol. 88, no. 11, p. 112904, 2006. (SCI, IF: 3.554, RF:14/105, and CN:1)
[24]   Chao-Sung Lai, Shing-Kan Peng, Tung-Ming Pan, Jer-Chyi Wang, and Kung-Ming Fan, "Work function adjustment by nitrogen incorporation in HfNxgate electrode with post metal annealing," Electrochem. Solid-State Lett., vol. 9, no. 7, pp. G239-G241, 2006. (SCI, IF:1.837, RF:58/212, and CN:6)
[25]   Tung-Ming Pan*, "Channel length dependence of negative bias temperature instability on pMOSFETs with either B- or BF2-implanted source/drain," J. Electrochem. Soc., vol. 153, no. 7, pp. G707-G711, 2006. (SCI, IF:2.241, RF:1/16, and CN:2)
[26]   Tung-Ming Pan*, Chun-Lin Chen, Wen-Wei Yeh, and Sung-Ju Hou, "Structural and electrical characteristics of thin erbium oxide gate dielectrics," Appl. Phys. Lett., vol. 89, no. 22, p. 222912, 2006. (SCI, IF: 3.554, RF:14/105, and CN:18)
[27]   Tung-Ming Pan*, "Carrier mobility characteristics and NBTI reliability in strained-Si pMOSFETs," Electrochem. Solid-State Lett., vol. 9, no. 12, pp. G351-G353, 2006. (SCI, IF:1.837, RF:58/212, and CN:2)
[28]   Tung-Ming Pan*, Jian-Der Lee, Wei-Hao Shu, and Tsung-Te Chen, "Structural and electrical properties of neodymium oxide high-k gate dielectrics," Appl. Phys. Lett., vol. 89, no. 23, p. 232908, 2006. (SCI, IF: 3.554, RF:14/105, and CN:14)
[29]   Tung-Ming Pan*, Jian-Der Lee and Wen-Wei Yeh, "Influence of oxygen content on the structural and electrical characteristics of thin neodymium oxide gate dielectrics," J. Appl. Phys., vol. 101, no. 2, pp. 024110, 2007. (SCI, IF:2.072, RF:24/105, and CN:8)
[30]   Tung-Ming Pan*, Chun-Lin Chen, Wen-Wei Yeh, and Wen-Jen Lai, "Physical and electrical properties of thin lanthanum oxide gate dielectrics for Al and Al/TaN metal gate,"Electrochem. Solid-State Lett., vol. 10, no. 3, pp. H101-H103, 2007. (SCI, IF:1.837, RF:58/212, and CN:11)
[31]   Tung-Ming Pan*, Feng-Ji Tsai, Chun-I Hsieh, and Tin-Wei Wu, "Structural properties and electrical characteristics of praseodymium oxide gate dielectrics,"Electrochem. Solid-State Lett., vol. 10, no. 4, pp. G21-G24, 2007. (SCI, IF:1.837, RF:58/212, and CN:18)
[32]   Tung-Ming Pan*, Wei-Hao Shu and Jia-Liang Hong, "Structural and electrical characteristics of Er2TiO5 gate dielectrics," Appl. Phys. Lett., vol. 90, no. 22, p. 222906, 2007.(SCI, IF:3.554, RF:14/105, and CN:1)
[33]   Chuan-Hsi Liu and Tung-Ming Pan*, "Hot carrier and negative bias temperature instability reliabilities of strained-Si MOSFETs," IEEE Trans. on Electron Devices, vol. 54, no. 7, pp. 1799-1803, 2007. (SCI, IF:2.445, RF:26/245, and CN:5)
[34]   Tung-Ming Pan*, Jian-Der Lee, and Chun-Lin Chen, "Physical and electrical properties of yttrium oxide gate dielectric on Si Substrate with NH3 plasma treatment," J. Electrochem. Soc., vol. 154, no. 8, pp. H698-H703, 2007. (SCI, IF:2.241, RF:1/16, and CN:10)
[35]   Chuan-Hsi Liu, Tung-Ming Pan*, Wei-Hao Shu, and Kuo-Chan Huang, "Physical and electrical properties of Ti-doped Er2O3 films for high-k gate dielectrics," Electrochem. Solid-State Lett., vol. 10, no. 8, pp. G54-G57, 2007. (SCI, IF:1.837, RF:58/212, and CN:5)
[36]   Tung-Ming Pan*, Wen-Wei Yeh, and Jing-Wei Chen, "Formation of stacked oxide/Y2TiO5/oxide layers for flash memory application," Appl. Phys. Lett., vol. 91, no. 6, p. 062909, 2007.(SCI, IF:3.554, RF:14/105, and CN:0)
[37]   Tung-Ming Pan* and Jian-Der Lee, "Influence of oxygen content on the physical and electrical properties of thin yttrium oxide dielectrics deposited by reactive rf sputtering on Si substrate," J. Electron. Mater., vol. 36, no. 10, pp. 1395-1403, 2007. (SCI, IF:1.428, RF:79/245, and CN:0)
[38]   Tung-Ming Pan*, Te-Yi Yu and Yu-Yi Hsieh, "Comparison of structural and electrical properties of praseodymium oxide and praseodymium titanium oxide charge trapping layer memories,"J. Appl. Phys., vol. 102, no. 7, p. 074111, 2007. (SCI, IF:2.072, RF:24/105, and CN:3)
[39]   Tung-Ming Pan* and Wei-Hao Shu, "Structural and electrical characteristics of a high-k NdTiO3 gate dielectric," Appl. Phys. Lett., vol. 91, no. 17, p. 172904, 2007.(SCI, IF:3.554, RF:14/105, and CN:3)
[40]   Tung-Ming Pan*, Chun-I Hsieh, Tsai-Yu Huang, Jian-Ron Yang, and Pin-Sun Kuo, "Good high-temperature stability of TiN/Al2O3/WN/TiN capacitors," IEEE Electron Devices Lett., vol. 28, no. 11, pp. 954-956, 2007. (SCI, IF:2.605, RF:21/245, and CN:2)
[41]   Tung-Ming Pan*, "Electrical and reliability characteristics of 12Å oxynitride gate dielectrics by different processing treatments," IEEE Trans. on Semiconduct. Manufact., vol. 20, no. 4, pp. 476-481, 2007.(SCI, IF:1.007, RF: 122/245, and CN:2)
[42]   Tung-Ming Pan* and Kao-Ming Liao, "Structural properties and sensing characteristics of Y2O3 sensing membrane for pH-ISFET," Sen. Actuators B., vol. 127, no. 2, pp. 480-485, 2007. (SCI, IF:3.083, RF:5/56, and CN:14)
[43]   Tung-Ming Pan* and Kao-Ming Liao, "Influence of oxygen content on the structural and sensing characteristics of Y2O3 sensing membrane for pH-ISFET," Sen. Actuators B., vol. 128, no. 1, pp. 245-251, 2007. (SCI, IF:3.083, RF:5/56, and CN:5)
[44]   Tung-Ming Pan* and Sung-Ju Hou, "Effect of postdeposition anneal on the interfacial and electrical properties of high-k NdOxNy gate dielectrics," Appl. Phys. Lett., vol. 92, no. 7, p. 072907, 2008.(SCI, IF:3.554, RF:14/105, and CN:1)
[45]   Tung-Ming Pan* and Te-Yi Yu, "Silicon-oxide-nitride-oxide-silicon type flash memory with a high-k NdTiO3 charge trapping layer," Appl. Phys. Lett., vol. 92, no. 11, p. 112906, 2008.(SCI, IF:3.554, RF:14/105, and CN:2)
[46]   Tung-Ming Pan* and Wei-Hao Shu, "Influence of neodymium content on structural properties and electrical characteristics of high-k NdTiO3 gate dielectrics," J. Electrochem. Soc., vol. 155, no. 4, pp. G72-G77, 2008. (SCI, IF:2.241, RF:1/16, and CN:0)
[47]   Tung-Ming Pan* and Wei-Hao Shu, "Influence of titanium content on the structural and electrical properties of Er1-xTixOy gate dielectrics," J. Electrochem. Soc., vol. 155, no. 4, pp. H247-H253, 2008. (SCI, IF:2.241, RF:1/16, and CN:0)
[48]   Tung-Ming Pan* and Tin-Wei Wu, "High-performance poly-silicon TFTs using stacked Pr2O3/oxynitride gate dielectric," IEEE Electron Devices Lett., vol. 29, no. 4, pp. 353-356, 2008. (SCI, IF:2.605, RF:21/245, and CN:7)
[49]   Tung-Ming Pan* and Te-Yi Yu, "Physical and electrical properties of high-k PrTixOy nanocrystal memories," J. Electrochem. Soc., vol. 155, no. 5, pp. G124-G127, 2008. (SCI, IF:2.241, RF:1/16, and CN:0)
[50]   Tung-Ming Pan* and Wen-Wei Yeh, "A high-k Y2O3 charge trapping layer for nonvolatile memory application," Appl. Phys. Lett., vol. 92, no. 17, p. 173506, 2008.(SCI, IF:3.554, RF:14/105, and CN:1)
[51]   Tung-Ming Pan* and Tin-Wei Wu, "Effects of oxynitride buffer layer on the electrical characteristics of poly-silicon TFTs using Pr2O3 gate dielectric," IEEE Trans. on Electron Devices, vol. 55, no. 6, pp. 1379-1385, 2008. (SCI, IF:2.445, RF:26/245, and CN:0)
[52]   Tung-Ming Pan*, Sung-Ju Hou, and Chih-Hwa Wang, "Effects of nitrogen content on the structure and electrical properties of high-k NdOxNy gate dielectrics,"J. Appl. Phys., vol. 103, no. 12, p. 124105, 2008. (SCI, IF:2.072, RF:24/105, and CN:1)
[53]   Tung-Ming Pan* and Wen-Wei Yeh, "Polysilicon-oxide-nitride-oxide-silicon-type flash memory using an Y2O3 film as a charge trapping layer,"Electrochem. Solid-State Lett., vol. 11, no. 7, pp. G37-G39, 2008. (SCI, IF:1.837, RF:58/212, and CN:1)
[54]   Tung-Ming Pan* and Kao-Ming Liao, "Comparison of structural and sensing characteristics of Pr2O3 and PrTiO3 sensing membrane for pH-ISFET application,"Sen. Actuators B., vol. 133, no. 1, pp. 97-104, 2008. (SCI, IF:3.083, RF:5/56, and CN:11)
[55]   Tung-Ming Pan* and Wen-Wei Yeh, "High-performance high-k Y2O3 SONOS-type flash memory,"IEEE Trans. on Electron Devices, vol. 55, no. 9, pp. 2354-2360, 2008. (SCI, IF:2.445, RF:26/245, and CN:0)
[56]   Tung-Ming Pan*, Te-Yi Yu, and Ching-Chi Wang, "High-k Nd2O3 and NdTiO3 charge trapping layers for nonvolatile memory metal-SiO2-high-k-SiO2-silicon devices," J. Electrochem. Soc., vol. 155, no. 10, pp. G218-G223, 2008. (SCI, IF:2.241, RF:1/16, and CN:1)
[57]   Tung-Ming Pan* and Kao-Ming Liao, "Development of a high-k Pr2O3 sensing membrane for pH-ISFET application," IEEE Sensors J., vol. 8, no. 11, pp. 1856-1861, 2008.(SCI, IF:1.581, RF:69/245, and CN:3)
[58]   Tung-Ming Pan* and Jing-Wei Chen, "Metal-oxide-high-k-oxide-silicon memory structure using anYb2O3 charge trapping layer," Appl. Phys. Lett., vol. 93, no. 18, p. 183510, 2008.(SCI, IF:3.554, RF:14/105, and CN:2)
[59]   Tung-Ming Pan* and Chun-Chin Huang, "Effect of annealing on the structural and electrical properties of high-k Sm2O3 dielectrics," Electrochem. Solid-State Lett., vol. 11, no. 12, pp. G62-G65, 2008. (SCI, IF:1.837, RF:58/212, and CN:4)
[60]   Chun-I Hsieh, Tung-Ming Pan*, Jian-Chyi Lin, Yan-Bo Peng, Tsai-Yu Huang, Chang-Rong Wu, and Steven Shih, "Structural properties of Al2O3 dielectrics grown on TiN metal substrates by atomic layer deposition," Appl. Surf. Sci., vol. 255, no. 6, pp. 3769-3772, 2009. (SCI, IF:1.616, RF:6/16, and CN:1)
[61]   Tung-Ming Pan*, Ching-Lin Chan, and Tin-Wei Wu, "High-performance poly-silicon TFTs using a high-k PrTiO3 gate dielectric," IEEE Electron Devices Lett., vol. 30, no. 1, pp. 39-41, 2009. (SCI, IF:2.605, RF:21/245, and CN:3)
[62]   Tung-Ming Pan* and Wei-Shiang Huang, "Effects of oxygen content on the structural and electrical properties of thin Yb2O3 gate dielectrics," J. Electrochem. Soc., vol. 156, no. 1, pp. G6-G11, 2009. (SCI, IF:2.241, RF:1/16, and CN:3)
[63]   Tung-Ming Pan* and Kao-Ming Liao, "Structural and sensing properties of high-k PrTiO3 sensing membranes for pH-ISFET applications,"IEEE Trans. on Biomed. Eng., vol. 56, no. 2, pp. 471-476, 2009. (SCI, IF:2.154, RF:22/59, and CN: 1)
[64]   Tung-Ming Pan* and Wei-Shiang Huang, "Physical and electrical characteristics of a high-k Yb2O3 gate dielectric," Appl. Surf. Sci., vol. 255, no. 9, pp. 4979-4982, 2009. (SCI, IF:1.616, RF: 6/16, and CN:1)
[65]   Fu-Chien Chiu, Chun-Yen Lee, and Tung-Ming Pan, "Current conduction mechanisms of Pr2O3/oxynitride laminated gate dielectrics," J. Appl. Phys., vol. 105, no. 7, p. 074103, 2009. (SCI, IF:2.072, RF:24/105, and CN:0)
[66]   Min-Hsien Wu, Chih-Hung Cheng, Chao-Sung Lai, and Tung-Ming Pan*, "Structural properties and sensing performance of high-k Sm2O3 membrane-based electrolyte-insulator-semiconductor for pH and urea detection,"Sen. Actuators B., vol. 138, no. 1, pp. 221-227, 2009. (SCI, IF:3.083, RF:5/56, and CN:3)
[67]   Tung-Ming Pan*, Chih-Hung Cheng and Cheng-Da Lee, "Yb2O3 thin films as a sensing membrane for pH-ISFET application," J. Electrochem. Soc., vol. 156, no. 5, pp. J108-J111, 2009. (SCI, IF:2.241, RF:1/16, and CN:2)
[68]   Tung-Ming Pan* and Jian-Chi Lin, "A TiO2/Er2O3 stacked electrolyte-insulator-semiconductor film pH-sensor for detection of urea,"Sen. Actuators B., vol. 138, no. 2, pp. 474-479, 2009. (SCI, IF:3.083, RF:5/56, and CN:3)
[69]   Tung-Ming Pan*, Jian-Chi Lin, Min-Hsien Wu, and Chao-Sung Lai, "Study of high-k Er2O3 thin layers as ISFET sensitive insulator surface for pH detection,"Sen. Actuators B., vol. 138, no. 2, pp. 619-624, 2009. (SCI, IF: 3.083, RF:5/56, and CN:3)
[70]   Tung-Ming Pan*, Jian-Chi Lin, Min-Hsien Wu, and Chao-Sung Lai, "Structural properties and sensing performance of high-k Nd2TiO5 thin layer-based electrolyte-insulator-semiconductor for pH detection and urea biosensing,"Biosens. Bioelectron., vol. 24, no. 9, pp. 2864-2870, 2009. (SCI, IF:5.429, RF:1/24, and CN:1)
[71]   Tung-Ming Pan*, Li-Chen Yen, Chun-Chin Huang, and Wu-Ching Lin, "Structural and electrical characteristics of high-k Sm2TiO5 gate dielectrics," Electrochem. Solid-State Lett., vol. 12, no. 6, pp. G27-G29, 2009. (SCI, IF:1.837, RF:58/212, and CN:0)
[72]   Tung-Ming Pan* and Wen-Wei Yeh, "Silicon-oxide-high-k-oxide-silicon memory using a high-k Y2O3 nanocrystal film for flash memory application," J. Vac. Sci. Techn. A, vol. 27, no. 4, pp. 700-705, 2009.(SCI, IF:1.297, RF: 54/105, and CN:0)
[73]   Tung-Ming Pan*, Ching-Lin Chan, and Tin-Wei Wu, "High performance CF4 plasma treated-polysilicon TFTs using a high-k PrTiO3 gate dielectric," Electrochem. Solid-State Lett., vol. 12, no. 8, pp. G44-G46, 2009. (SCI, IF:1.837, RF:58/212, and CN:0)
[74]   Tung-Ming Pan* and Te-Yi Yu, "Comparison of the structural properties and electrical characteristics of Pr2O3, Nd2O3 and Er2O3 charge trapping layer memories,"Semiconduct. Sci. Techn., vol. 24, no. 9, p. 095022, 2009. (SCI, IF:1.253, RF: 93/245, and CN:0)
[75]   Min-Hsien Wu, Cheng-Da Lee, and Tung-Ming Pan*, "High-k PrYxOy sensing films electrolyte-insulator-semiconductor pH-sensor for the detection of urea," Anal. Chim. Acta. vol. 651, no. 1, pp. 36-41, 2009. (SCI, IF:3.757, RF:8/70, and CN:0)
[76]   Tung-Ming Pan* and Jian-Chi Lin, "Effects of post-deposition annealing and oxygen content on the structural and pH-sensitive properties of thin Nd2O3 films,"IEEE Sensors J., vol. 9, no. 10, pp. 1173-1180, 2009.(SCI, IF:1.581, RF:69/245, and CN:0)
[77]   Tung-Ming Pan*, Chao-Wen Lin, Jian-Chi Lin, and Min-Hsien Wu, "Structural properties and sensing characteristics of thin Nd2O3 sensing films for pH detection," Electrochem. Solid-State Lett., vol. 12, no. 10, pp. J96-J99, 2009. (SCI, IF:1.837, RF:58/212, and CN:0)
[78]   Tung-Ming Pan*, Li-Chen Yen and Sheng-Han Su, "Effect of post-deposition annealing on structural and electrical properties of high-k HoTiO3 gate dielectrics," Appl. Surf. Sci., vol. 256, no. 5, pp. 1534-1537, 2009. (SCI, IF:1.616, RF: 6/16, and CN:0).
[79]   Tung-Ming Pan*, Cheng-Da Lee and Min-Hsien Wu, "High-k Tm2O3 sensing membrane-based electrolyte-insulator-semiconductor for pH detection," J. Phys. Chem. C, vol. 113, no. 52, pp. 21937-21940, 2009.(SCI, IF:4.224, RF:22 /212, and CN:1).
[80]   Tung-Ming Pan* and Li-Chen Yen, "Structural properties and electrical characteristics of high-k Tm2Ti2O7 gate dielectrics," Appl. Surf. Sci., vol. 256, no. 6, pp. 1845-1848, 2010. (SCI, IF:1.616, RF: 6/16, and CN:0).
[81]   Tung-Ming Pan*, Ming-De Huang, Chao-Wen Lin, and Min-Hsien Wu, "Development of high-kHoTiO3 sensing membrane for pH detection and glucose biosensing,"Sen. Actuators B., vol. 144, no. 1, pp. 139-145, 2010. (SCI, IF:3.083, RF:5/56, and CN:0)
[82]   Tung-Ming Pan* and Li-Chen Yen, "Influence of postdeposition annealing on structural properties and electrical characteristics of thin Tm2O3 and Tm2Ti2O7 dielectrics," Appl. Surf. Sci., vol. 256, no. 9, pp. 2786-2791, 2010. (SCI, IF:1.616, RF: 6/16, and CN:0).
[83]   Tung-Ming Pan*, Fa-Hsyang Chen, and Ji-Shing Jung, "A high-k Tb2TiO5 nanocrystal memory," Appl. Phys. Lett., vol. 96, no. 10, p. 102904, 2010.(SCI, IF:3.554, RF:14/105, and CN:0)
[84]   Tung-Ming Pan* and Zhi-Hong Li, "High-performance CF4 plasma treated polycrystalline silicon thin-film transistors using a high-k Tb2O3 gate dielectric," Appl. Phys. Lett., vol. 96, no. 11, p. 113504, 2010.(SCI, IF:3.554, RF:14/105, and CN:0)
[85]   Min-Hsien Wu, Tsung-Wu Lin, Ming-De Huang, Hsin-Yao Wang, Tung-Ming Pan*, "Label-free detection of serum uric acid using novel high-k Sm2TiO5 membrane-based electrolyte-insulator-semiconductor," Sen. Actuators B., vol. 146, no. 1, pp. 342-348, 2010. (SCI, IF: 3.083, RF:5/56, and CN:0).
[86]   Tung-Ming Pan*,Ji-Shing Jung, and Xin-Chang Wu, "Effect of postdeposition annealing on the structural and electrical characteristics of Yb2TiO5 charge trapping layers," Appl. Phys. Lett., vol. 96, no. 16, p. 162901, 2010.(SCI, IF:3.554, RF:14/105, and CN:0)
[87]   Tung-Ming Pan* and Cheng-Da Lee, "Influence of oxygen content and post-deposition annealing on structural and sensing characteristics of Tm2O3 thin membranes for pH detection," IEEE Sensors J., vol.10, no. 5, pp. 1004-1011, 2010.(SCI, IF:1.581, RF:69/245, and CN:0)
[88]   Tung-Ming Pan*, Li-Chen Yen and Xin-Chang Wu, "A comparative study on the structural properties and electrical characteristics of thin HoTixOy, TmTixOy and YbTixOy dielectrics," Semiconduct. Sci. Techn. vol. 25, no. 5, p. 055015, 2010. (SCI, IF:1.253, RF: 93/245, and CN:0)
[89]   Tung-Ming Pan*, Zhi-Hong Li, and Chih-Kang Deng, "Effects of CF4 plasma treatment on the electrical characteristics of poly-silicon TFTs using a Tb2O3 gate dielectric," IEEE Trans. on Electron Devices, vol. 57, no. 7, pp. 1519-1526, 2010. (SCI, IF:2.445, RF:26/245, and CN:0)
[90]   Tung-Ming Pan*, Ji-Shing Jung, and Fa-Hsyang Chen, "Metal-oxide-high-k-oxide-silicon memory structure incorporating a Tb2O3 charge trapping layer," Appl. Phys. Lett., vol. 97, no. 1, p. 012906, 2010.(SCI, IF:3.554, RF:14/105, and CN:0)
[91]   Tung-Ming Pan*andChun-Chin Huang, "Effects of oxygen content and postdeposition annealing on the physical and electrical properties of thin Sm2O3 gate dielectrics," Appl. Surf. Sci., vol. 256, no. 23, pp. 7186-7193, 2010. (SCI, IF:1.616, RF: 6/16, and CN:0).
[92]   Tung-Ming Pan*, Xin-Chang Wu and Li-Chen Yen, "Effects of postdeposition annealing on physical and electrical properties of high-k Yb2TiO5 dielectrics," J. Vac. Sci. Techn. A, vol. 28, no. 5, pp. 1084-1088, 2010.(SCI, IF:1.297, RF: 54/105, and CN:0)
[93]   Tung-Ming Pan*, Fa-Hsyang Chen and Ji-Shing Jung, "Structural and electrical characteristics of high-k Tb2O3 and Tb2TiO5 charge trapping layers for nonvolatile memory applications," accepted for J. Appl. Phys.
[94]   Tung-Ming Pan* and Chao-Wen Lin, "Structural and sensing characteristics of Dy2O3 and Dy2TiO5 electrolyte-insulator-semiconductor pH-sensor," accepted for J. Phys. Chem.
[95]   Tung-Ming Pan*, Wei-Tsung Chang, and Fu-Chien Chiu, "Structural and electrical properties of thin Ho2O3 gate dielectrics," accepted for Thin Solid Films.
[96]   Tung-Ming Pan* and Chih-Hung Lu, "Unipolar resistive switching behavior in Dy2O3 films for nonvolatile memory applications," submitted to IEEE Electron Devices Lett.
[97]   Tung-Ming Pan* and Ming-De Huang, "Structural and electrical characteristics of high-k Ho2O3 electrolyte-insulator-semiconductor pH-sensor," submitted to J. Electrochem. Soc.
[98] Fa-Hsyang Chen, Fu-Chien Chiu and Tung-Ming Pan*, "Ti-doped Dy2O3 as the charge trapping layer for nonvolatile memory application," submitted toAppl. Phys. Lett.
[99] Tung-Ming Pan*, Kai-Ming Chen and Chih-Hung Lu, "Bipolar resistive switching behavior in the Ru/Y2O3/TaN nonvolatile memory device," submitted to Electrochem. Solid-State Lett.
[100] Tung-Ming Pan*and Chih-Hung Lu, "Effect of postdeposition annealing on the structural and electrical properties of thin Dy2TiO5 dielectrics," submitted to Thin Solid Films.
[101] Tung-Ming Pan*, Wei-Tsung Chang and Fu-Chien Chiu, "Structural properties and electrical characteristics of high-k Dy2O3 gate dielectrics," submitted to Appl. Surf. Sci.
[102] Min-Hsien Wu, Yu-Fang Lee, Chao-Wen Lin, Shiao-Wen Tsai, Hsin-Yao Wang, and Tung-Ming Pan*, "Development of high-k Tm2Ti2O7 sensing membrane-based electrolyte-insulator-semiconductor for pH detection and its application for glucose biosensing using poly (N-isopropylacrylamide) as an enzyme encapsulation material," submitted toJ. Materials Chem.
[103] Tung-Ming Pan* and Fa-Hsyang Chen, "Al/Al2O3/Sm2O3/SiO2/Si structure nonvolatile memory," submitted to Semiconduct. Sci. Techn.
[104] Tung-Ming Pan*, Chao-Wen Lin and Min-Hsien Wu, "Structural and sensing properties of Dy2TiO5 film electrolyte-insulator-semiconductor for pH detection and urea biosensing," submitted toSen. Actuators B.
 
International Conference
[1]   T. S. Chao, T. M. Pan, M. C. Liaw, C. C. Chen, W. L. Yang, T. F. Lei, M. S. Tsai, B. T. Dai, H. C. Lin, T. Y. Huang, C. P. Lu and W. H. Chang, "Novel solutions for post-CMP and one-step pre-gate oxide cleaning," in ISSM’98, 1998, pp.125-128.
[2]   Tung Ming Pan, Tan Fu Lei, Tien Sheng Chao, Ming Chi Liaw, and C. P. Lu, "One-step cleaning solutions for pre-gate oxide cleaning," Int. Electrochem. Soc., 196th Meeting, Honolulu, 1999, p. 1.
[3]   Tung Ming Pan, Tan Fu Lei, Ming Chi Liaw, Tien Sheng Chao, and C. P. Lu, "Substituted group effect of TMAH of novel solutions for post-CMP cleaning," Int. Electrochem. Soc., 196th Meeting, Honolulu, 1999, p. 1271.
[4]   T. S. Chao, W. L. Yang, C. M. Cheng, T. M. Pan, and T. F. Lei , "High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices, " Int. Symp. on VLSI-TSA, Hsinchu, 2001, pp. 142-145.
[5]   T. S. Chao, C. H. Yeh, T. M. Pan, T. F. Lei, and Y. H. Li, "One cleaning solution for complete CMOS processes, " Int. Conf. on Solid State Devices and Materials, Nagoya, Japan, Aug., 2002.
[6]   Chuan H. Liu, Hsiu-Shan Lin, Yu-Yin Lin, M. G. Chen, T. M. Pan, C. J. Kao, K. T. Huang, S. H. Lin, Y. C. Sheng, Wen-Tung Chang, J. H. Lee, M. Huang, Chiung-Sheng Hsiung, S. Huang-Lu, Chen-Chung Hsu, Alan Y. Liang, Jenkon Chen, W. Y. Hsieh, P. W. Yen, S. C. Chien, Y. T. Loh, Yih J. Chang, and Fu-Tai Liou, "Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N2O-grown oxides and NO RTA treatment,"in Proc. IRPS Tech., 2002, pp. 268-271.
[7]   Chao-Sung Lai, Shing-Kan Peng, Jer-Chyi Wang, Tung-Ming Pan, Kung-Ming Fan, and Jian-Yi Wong, "Work function adjustment by nitrogen incorporation in HfN gate electrode," in SSDM, 2005, pp.125-128.
[8]   Tung-Ming Pan, Chao-Sung Lai, Hui-Hsin Hsu, Jer-Chyi Wang, Kuan-Di Wang, Chun-Lin Chen Jian-Chi Lin, and Jian-Der Lee, "The electrical characteristics of thin gadolinium oxide films on silicon substrate by DC reactive RF-sputtering," in ISDRS, 2005, p. TA1-02.
[9]   Tung-Ming Pan, Chun-Lin Chen, Jian-Der Lee, Chun-I Hsieh, and Chao-Sung Lai, "Electrical characteristics of erbium oxide films on silicon substrate by reactive RF sputtering for different metal Gate," Int. Electrochem. Soc., 209th Meeting, Denver, 2006, p. 401.
[10]   Tung-Ming Pan, Jian-Der Lee, Chun-Lin Chen, Sung-Ju Hou, Wei-Hao Shu, Tsung-Te Chen, and Wen-Jen Lai, "The electrical characteristics of thin yttrium oxide film on Si substrate with NH3 plasma treatment," in IWDTF, 2006, p. 91.
[11]   Tung-Ming Pan, Chun-Lin Chen, Wen-Wei Yeh, Jian-Der Lee, Te-Yi Yu, Kao-Ming Liao, Tin-Wei Wu, Shin-Chieh Lee, Yung-Shiuan Chen, Tsung-Te Chen, and Wen-Jen Lai, "The physical and electrical properties of thin lanthanum oxide gate dielectrics with Al or Al/TaN metal gate," in IWDTF, 2006, p. 93.
[12]   Tung-Ming Pan, Chun-I Hsieh, Feng-Ji Tsai, and Tin-Wei Wu, "Excellent electrical characteristics of praseodymium oxide dielectrics on Si substrate by reactive RF sputtering," Int. Electrochem. Soc., 211th Meeting, Chicago, 2007, p. 401.
[13]   Tung-Ming Pan, Wei-Hao Hsu, Chun-Chin Huang, Wei-Shiang Huang, Kuo-Chan Huang, and Jia-Liang Hong, "Physical and electrical properties of addition Ti into Er2O3 gate dielectrics," in SSDM, 2007, p. 332.
[14]   Tung-Ming Pan, Kao-Ming Liao, Jian-Chyi Lin, Chih-Hung Cheng, Zhao-Wen Lin, and Chih-Jen Chang, "A novel high-k Y2O3 sensing membrane for pH-ISFET," in SSDM, 2007, p. 666.
[15]   Tung-Ming Pan, Kao-Ming Liao, Chih-Hung Cheng, and Jian-Chyi Lin, "Structural and sensing characteristics of Pr2O3 sensing membrane for pH-ISFET," in MNC, 2007, pp.198-199.
[16]   Tung-Ming Pan, Te-Yi Yu, Jing-Wei Chen, Kai-Ming Chen, Ching-Lin Chan, Yu-Yi Hsieh, and Gong-Yuan Chang, "Physical and electrical characteristics of a high-k PrTixOy film for flash memory," in IEDMS, 2007, PC-15.
[17]   Tung-Ming Pan, Yung-Shiuan Chen, Ching-Lin Chan, Shih-Chieh Lee, Yue-Chang Chen, and Jun-Tin Liu, "Electrical conduction mechanisms of Al/Pr2O3/Si and Al/Pr2O3/SiOxNy/Si structure for low-temperature TFT application," in IEDMS, 2007, PD-14.
[18]   Tung-Ming Pan, Jian-Der Lee, Wei-Tsung Chang, and Chih-Jen Chang, "Influence of oxygen content on the physical and electrical properties of high-k yttrium oxide gate dielectrics," in IEDMS, 2007, PC-11.
[19]   Tung-Ming Pan, Kao-Ming Liao, Li-Chen Yen, Yu-Yi Hsieh, and Yue-Zhang Chen, "Effects of oxygen content on the structural and sensing properties of Y2O3 sensing membrane for pH-ISFET application," in ISDRS, 2007, WP4-05.
[20]   Tung-Ming Pan, Wen-Wei Yeh, Wei-Tsung Chang, Kai-Ming Chen, Jing-Wei Chen, and Kuo-Chan Huang, "A high-k Y2TiO5 charge trapping layer for high-density flash memory application," in ISDRS, 2007, WP7-04.
[21]   Chia-Cheng Yang, Tung-Ming Pan, and Chuan-Hsi Liu, "Electrical and reliability characteristics in strained-Si MOSFETs," Int. Electrochem. Soc., 213th Meeting, Phoenix, 2008, p. 735.
[22]   Tung-Ming Pan, Tin-Wei Wu, Ching-Lin Chan, and Chih-Hong Lee, "Electrical characteristics of low-temperature poly-silicon thin-film transistor using a stacked Pr2O3/SiOxNy gate dielectric," Int. Electrochem. Soc., 213th Meeting, Phoenix, 2008, p. 642.
[23]   Chun-I Hsieh, Tsai-Yu Huang, Tung-Ming Pan, Jian-Chyi Lin, Chang-Rong Wu, Steven Shih, "Oxidation behavior of ALD process using H2O and ozone as oxidants at varied temperatures on TiN metal substrates," Int. Electrochem. Soc., 213th Meeting, Phoenix, 2008, p. 777.
[24]   Chun-I Hsieh, Tung-Ming Pan, Tsai-Yu Huang, W. Liang, Jian-Chyi Lin, "Enhancement in thermal stability of metal-insulator-metal capacitors for deep trench DRAM application," Int. Electrochem. Soc., 213th Meeting, Phoenix, 2008, p. 737.
[25]   Tung-Ming Pan, Te-Yi Yu, Jing-Wei Chen, and Jiann-Heng Chen, "Structural and electrical properties of a high-k Nd2O3 charge trapping layer for nonvolatile memory application," in MNE, 2008, MEMS2-P09.
[26]   Min-Hsien Wu, Tung-Ming Pan, and Kao-Ming Liao, "Structural properties and sensing characteristics of a high-k PrTiO3 pH-ISFET for biomedical engineering application," in MNE, 2008, NED-P12.
[27]   Tung-Ming Pan, Wen-Wei Yeh, Fa-Hsyang Chen, and Chih-Hwa Wang, "Polysilicon-oxide-nitride-oxide-silicon-type flash memory using a high-k Y2O3 charge trapping layer," in MNC, 2008, 206.
[28]   Tung-Ming Pan, Te-Yi Yu, Ji-Shing Jung, Ching-Chi Wang, Ya-Chang Hsieh, and Chih-Cheng Yeh, "Silicon-oxide-nitride-oxide-silicon-type memory device using a high-k NdTiO3 charge trapping layer," in MNC, 2008, 34.
[29]   Tung-Ming Pan, Sung-Ju Hou, Li-Chen Yen, Jian-Wei Cheng, and Tung-Han Wu, "Physical properties and electrical characteristics of high-k NdOxNy gate dielectrics," in IWDTF, 2008, p. 35.
[30]   Tung-Ming Pan, Wen-Wei Yeh, Zhi-Hong Li, Jun-Kai Peng, Meng-Han Tsai, Chia-Wei Hu, and Jie-Tin Lo, "SOMOS memory device using high-k Y2O3 charge trapping layer for nonvolatile memory application," in IWDTF, 2008, p.115.
[31]   Tung-Ming Pan, Jian-Chi Lin, Ming-De Huang, Yan-Bo Peng, and Shi-Xian You, "Investigation of Er2O3 thin films as ISFET sensing membrane for biomedical applications," in IEDMS, 2008, CP-479.
[32]   Tung-Ming Pan, Chun-Chin Huang, Jie-Tin Lo, and Meng-Han Tsai, "Structural and electrical properties of high-k Sm2O3 gate dielectrics," in IEDMS, 2008, CO-480.
[33]   Tung-Ming Pan, Cheng-Da Lee, and Jian-Chi Lin, "Sensing properties of thin Nd2O3 sensing membrane for pH-ISFET," Int. Electrochem. Soc., 215th Meeting, San Francisco, 2009, p. 580.
[34]   Tung-Ming Pan, Ming-De Huang, Jian-Chi Lin, andMin-Hsien Wu, "Sensing performance of a TiO2/Er2O3 stacked film pH-ISFET for urea detection," Int. Electrochem. Soc., 215th Meeting, San Francisco, 2009, p. 581.
[35]   Tung-Ming Pan, Chao-Wen Lin, Jian-Chi Lin, Sheng-Han Su, and Ho-Ming Kuo, "Influence of oxygen content on the structural and pH-sensitive properties of thin Nd2O3 electrolyte-insulator-semiconductor," IEEE Sensors Conference, 2009, A4P-F02.
[36]   Tung-Ming Pan, Chao-Wen Lin, Jian-Chi Lin, Yu-Kai Chien, Min-Hsien Wu, and Chao-Sung Lai, "Nd2TiO5 thin membrane electrolyte-insulator-semiconductor for pH detection and urea biosensor," in MNC, 2009, 18D-7-117.
[37]   Tung-Ming Pan, Kai-Ming Chen, Li-Chen Yen, and Sheng-Han Su, "Structural properties and electrical characteristics of high-k Sm2TiO5 gate dielectrics," in MNC, 2009, 19D-10-5.
[38]   Tung-Ming Pan, Yan-Bo Peng, Ming-De Huang, and Min-Hsien Wu, "Ho2O3film electrolyte-insulator-semiconductor for pH-sensor application," in IEDMS, 2009, E2-2.
[39]   Tung-Ming Pan, Kung-Yuan Chang, Cheng-Da Lee, and Min-Hsien Wu, "PrYxOy sensing films electrolyte-insulator-semiconductor for pH and urea detection," in IEDMS, 2009, E1-5.
[40]   Tung-Ming Pan, Jian-Hung Jiang and Li-Chen Yen, "Structural properties and electrical characteristics of high-k Tm2Ti2O7 gate dielectrics," in IEDMS, 2009, C5-4.
[41]   Tung-Ming Pan, Chih-Jen Chang, Ching-Lin Chan, Sheng-Han Su, and Wu-Ching Lin, "CF4 plasma treated poly-Si film by PECVD for high-k PrTiO3 poly-Si TFTs," in ISDRS, 2009, FP4-06.
[42]   Tung-Ming Pan, Fa-Hsyang Chen, Cheng-Da Lee, Yu-Kai Chien, and Ho-Ming Ko, "High-k Yb2O3 thin films as a sensing membrane for pH-ISFET application," in ISDRS, 2009, WP8-01.
[43]   Tung-Ming Pan, Fa-Hsyang Chen, and Ji-Shing Jung, "Structural and electrical properties of Tb2TiO5 charge trapping layer memories," in ICONN, 2010, 82.
[44]   Min-Hsien Wu, Chao-Wen Lin, Ming-De Huang, and Tung-Ming Pan, "A high-k Sm2TiO5 EIS for pH detection and glucose biosensing," in ICONN, 2010, 116.
[45]   Tung-Ming Pan, Li-Chen Yen, Chia-Wei Hu, and Tien-Sheng Chao, "Structural and electrical properties of high-k HoTiO3 gate dielectrics," Int. Electrochem. Soc., 217th Meeting, Vancouver, Canada, 2010, 961.
[46]   Tung-Ming Pan, Li-Chen Yen, Chia-Wei Hu, and Tien-Sheng Chao, "Influence of postdeposition annealing on physical and electrical properties of high-k Yb2TiO5 gate dielectrics," Int. Electrochem. Soc., 217th Meeting, Vancouver, Canada, 2010, 960.
[47]   Tung-Ming Pan, Shih-Hao Wang, Ming-De Huang, and Min-Hsien Wu, "High-k HoTiO3 sensing membrane for pH detection and glucose biosensing," 18th Int. Vacuum Congress, 2010, P1-BIO-17.
[48]   Tung-Ming Pan, Chao-Wen Lin, and Cheng-Da Lee, "Structural and sensing characteristics of Tm2O3 thin membranes for pH detection," 18th Int. Vacuum Congress, 2010, P1-BIO-18.
[49]   Tung-Ming Pan, Chao-Wen Lin, Chien-Hung Chiang, Ming-De Huang, and Cheng-Yi Chou, "A glucose biosensor based on pH-sensitive Sm2TiO5 electrolyte-insulator-semiconductor," in SSDM, 2010, P-11-9 .
[50]   H. Y. Shih, J. C. Wang, T. F. Lu, C. S. Lai, C. H. Kao, and T. M. Pan, " Novel Reference Electrode-Insulator-Nitride-Oxide-Semiconductor (RINOS) Structure with Sm2O3 Sensing Membrane for pH-sensor Application," in SSDM, 2010, P-11-10.
[51]   Tung-Ming Pan, Fa-Hsyang Chen, Kung-Yuan Chang, Ji-Shing Jung, and Wei-Zhen Li, "Metal-oxide-high-k-oxide-silicon memory structure with a Tb2O3 charge trapping layer," in MNC, 2010, 10B-2-3.
[52]   Tung-Ming Pan, Yu-Hsuan Shao, Chih-Hung Lu, and Cheng-Yi Chou, "Unipolar resistive switching behavior in Ru/Dy2O3/TaN structure for nonvolatile memory applications," in MNC, 2010, 12D-11-69.
[53]   Tung-Ming Pan, Yu-Hsuan Shao, Wei-Zhen Li, Kai-Ming Chen, Hsin Chiang, and Chih-Hung Lu, "Bipolar resistive switching behavior in the Ru/Y2O3/TaN nonvolatile memory device," in MNC, 2010, 10B-2-1.
[54]   Yan-Bo Peng, Fa-Hsyang Chen, Ji-Shing Jung, and Tung-Ming Pan, "A high-k Tb2TiO5 nanocrystal memory for nonvolatile memory applications," in MNC, 2010, 10B-2-2.
 
Book
[1] Pan, T. M. 2009. “Microfluidic Technology and Its Biological Applications” Comprehensive Biotechnology, 2e, (Chapter 352), Elsevier B.V., (In press) (Invited Book Chapter).

 

 Patent

[1]     雷添福、潘同明、趙天生,"一種超薄閘極絕緣層之製造方法"中華民國專利發明第142323(0900911~1091019)

[2]     雷添福、潘同明、趙天生、廖明吉,"用來清潔經化學機械研磨後之複晶矽薄膜表面的清洗溶液"中華民國專利發明第159210(0910711~1091213)

[3]     趙天生、潘同明、雷添福、廖明吉、李盈壕,"互補式金氧半場效電晶體製程之潔淨方法",中華民國專利發明第168078(0911201~1100808)

[4]     劉傳璽、林秀珊、林于尹、潘同明、黃國泰,"製作閘極介電層之方法",中華民國專利發明 167230(0911101~1101128)

[5]     Chuan-Hsi Liu, Hsiu-Shan Lin, Yu-Yin Lin, Tung-Ming Pan, and Kuo-Tai Huang, “Method for Fabricating a Gate Dielectric Layer,” U. S. Patent 6,555,485, issued on April 29, 2003.

[6]     劉傳璽、林秀珊、林于尹、潘同明、黃國泰,"製作閘極介電層之方法",中華人民共和國專利發明 ZL 02143319.42007/04/25

 

 

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