陳始明教授
陳始明 (CherMing Tan)教授
積體製程領域(工程產品可靠度) 辦公室電話03211880分機5952 cmtan[at]mail.cgu.edu.tw [at]=@ 333桃園縣龜山鄉文化一路259號長庚大學電子系
專長與研究領域 工程產品可靠度統計分析 可靠度測試設計和執行 產品壽命分析 哀退和失效機理分析 產品可靠度內建的設計方法 可靠度模擬 設備維護策略方法
學歷 新加坡國立大學電機和電子工程學士 (1980~1984) 加拿大多倫多大學應用科學碩士 (1986~1987) 加拿大多倫多大學應用科學博士 (1987~1992)
經歷 1. 新加坡快捷半導體公司失效分析工程師 (1984/5~1986/4) 2. 新加坡惠普科技股份有限公司研發工程師 (1986/5~1986/10) 3. 台灣旭興科技股份有限公司總經理特助 (1992/9~1993/10) 4. 台灣旭興科技股份有限公司品質和可靠度保證經理 (1993/11~1994/4) 5. 台灣旭興科技股份有限公司總經理室工程顧問 (1994/5~1996/10) 6. 特許半導體股份有限公司品保經理 (1996/11~1997/4) 7. 新加坡南洋理工大學講師 (1997/4/15~1998/12/31) 8. 新加坡南洋理工大學助理教授 (1999/1/1~1999/12/31) 9. 新加坡南洋理工大學副教授 (2000/1/1~2014/7/15) 10. 新加坡製造技術研究院兼任高級研究員 (2009/4~2014/7/15) 11. 天津市積體電路&計算系統工程中心科學顧問 (2013/2~) 12. 台灣長庚大學教授 (2014/7/15~)
專業學會資格 IEEE Senior Member (2000~) IEEE Distinguished Lecture (2004~) Senior Member, American Society of Quality (2007~) Fellow, Singapore Quality Institute (2004~) Fellow, Institute of Engineers, Singapore (2011~)
開授課程 類比電路分析 數位電路分析 集成電路可靠度分析和失效分析
簡歷 Prof Tan received his Ph.D in Electrical Engineering from the University of Toronto in 1992. He has 8 years of working experiences in reliability in electronic industry (both Singapore and Taiwan) before joining Nanyang Technological University (NTU) as faculty member in 1996 till 2014. He is now a Professor in Chang Gung University, Taiwan and Director of Centre of Reliability Science and Technology. He has published more than 270 International Journal and Conference papers, and holding 10 patents and 1 copyright for reliability software. He has given more than 50 invited talks in International Conferences. He has written 5 books and 4 book chapters in the field of reliability. He is also the Series Editor of Springer Brief in Reliability. He is the past chair of IEEE Singapore Section, Senior member of IEEE and ASQ, Distinguish Lecturer of IEEE Electronic Device Society on reliability, Founding Chair of IEEE Nanotechnology Chapter  Singapore Section, Standing Committee Chair of IEEE International Nanoelectronics Conference, Fellow of Institute of Engineers, Singapore, Fellow of Singapore Quality Institute, ExChair of all the quality and reliability certification programs in Singapore, Executive council member of Singapore Quality Institute, Technical Assessor to the Certification Laboratories in Singapore, ExDirector of SIMTechNTU Reliability Lab. He is an Editor of IEEE TDMR, Member of Editorial Advisory Board of Microelectronics Reliability, Editor of The Scientific World Journal, Associated Editor of International Journal on Computing, and Guest Editor of International J. of Nanotechnology, Nanoresearch letter and Microelectronic Reliability. He is the only awardee in Singapore for the IshikawaKano Quality Award from Japan. His research interests include reliability and failure physics modeling of electronic components and systems, finite element modeling of materials degradation, reliability of Li Ion battery and high power LEDs, statistical modeling of engineering systems, nanomaterials and devices reliability, and prognosis & health management of engineering system.
陳教授的學經歷背景為：1992年自多倫多大學取得電子工程博士。於1996年到2014年在新加坡南洋理工學院擔任副教授，於在大學任教之前，他在新加坡及台灣的電子工業可靠度領域已有八年的工業工作經驗。陳教授目前於長庚大學擔任教授一職亦是可靠度科學技術研究中心的主任。
陳教授目前已發表270篇以上國際期刊及研討會論文，擁有10項專利及1項可靠度軟體的版權。他目前已接獲50場以上的國際研討會議之演講邀請，他在可靠度領域已寫了5本書及在4本書的章節裡撰稿，他也是Springer Brief in Reliability的叢書總編輯者。
陳教授參加學術團體的經驗為：曾擔任國際電機電子工程師協會新加坡分會的主席、國際電機電子工程師協會和美國質量學會的資深會員、國際電機電子工程師協會擔任可靠度特聘講師、國際電機電子工程師協會新加坡分會擔任奈米科技組的創始組長、國際電機電子工程師協會國際奈米電子會議中擔任常設委員會主席、新加坡工程師學院院士、新加坡質量學院院士、新加坡質量與可靠度認證計劃前主席、新加坡質量學會常務理事、新加坡國家實驗室認證之技術評審員、南洋理工大學院及新加坡國科局(A*Star)聯合可靠度實驗室創辦主任、國際電機電子工程師學會元件與材料可靠度期刊(IEEE TDMR)主編、微電子可靠度期刊(Microelectronics Reliability)編輯顧問委員會成員、國際計算機期刊副主編、國際奈米科技期刊(Int. Journal of Nanotechnology)客座編輯、國際奈米研究短信(NanoResearch Letter)及微電子可靠度期刊客座編輯。他也是至2014年新加坡唯一獲得日本石川卡諾質量獎的得獎者。
陳教授的研究領域包含：電子元件和系統的可靠度及其失效物理、材料衰退的有限元模擬、鋰電池及高功率LED之可靠度、工程系統統計、奈米材料及己件之可靠度、工程系統預測及健康管理。
著作列表 PUBLICATION LIST
BOOKS 1. C. M. Tan, W. Li, Z. Gan, and Y. Hou. Applications of finite element methods for reliability studies on ULSI Interconnections. UK: Springer Verlag, 2011. 2. C. M. Tan. Electromigration in ULSI Interconnections. New York: World Scientific, 2010. 3. C. M. Tan. Simulated Annealing. Vienna, Austria: INTECH Publishing, 2008. 4. C. M. Tan and F. He. Electromigration Modeling at Circuit Layout Level. SpringerBrief on Reliability, 2013.
BOOK CHAPTERS 1. C. M. Tan. “Reliability Assessment of Integrated Circuits and its Misconception,” in Integrated Circuits, Photodiodes and Organic Field Effect Transistors. New York, United States: Nova Scientific Publishing, 2009, pp. 4568. 2. C. M. Tan and N. Raghavan. “Simulated Annealing for Mixture Distribution Analysis and its Applications to Reliability Testing” in Simulated Annealing. Vienna, Austria: INTECH Publishing, 2008, pp.227256. 3. Tan Cher Ming and Hou Yuejin. “Changing Reliability Physics of Interconnect from Micro to Nanotechnology”, in Ceramic Integration and Joining Technologies: From Macro to Nanoscale, John Wiley, 2010 4. Cher Ming Tan, “Component Level Reliability: Physical models and testing regulations” in “Handbook of Advanced Lighting Technology”, SpringerVerlag GmbH, Germany, 2014.
JOURNAL PAPERS
Interconnects Reliability
1. Yizhen Tian, Feifei He, QiJun Zhang, Cher Ming Tan, Jianguo Ma, “Rapid ULSI Interconnect Reliability Analysis Using Neural Networks” accepted in IEEE Trans. On Devices and Materials Reliability. 2. K. Ghosh, J. Zhang, L. Zhang, Y. Dong, H. Li, C. M. Tan, G. Xia, and C. S. Tan. “Integration of Lowk Dielectric Liner in Through Silicon Via and Thermomechanical Stress Relief,” Physics Express, vol 5(12), Dec 2012 3. Y. D. Han, H. Y. Jing, S. M. L. Nai, L. Y. Xu, C. M. Tan, and J. Wei. “Creep mitigation in SnAgCu composite solder with Nicoated carbon nanotubes,” Journal of Materials Science: Materials in Electronics, vol. 23, no. 5, pp. 11081115, May 2012. 4. Han, Y.D.; Jing, H.Y.; Nai, S.M.I.; Xu, L.Y.; Tan, C.M.; Wei, J. “Effect of NiCoated Carbon Nanotubes on Interfacial Reaction and Shear Strength of SnAgCu Solder Joints,” Journal of Electronic Materials, v 41, n 9, p 247886, Sept. 2012 5. Y.D. Han, H.Y. Jing, S.M.L. Nai, L.Y. Xu, C.M. Tan, J. Wei, “Interfacial reaction and shear strength of Nicoated carbon nanotubes refinforced SnAgCu solder joints during thermal cycling”, Intermetallics, V. 31, p. 7278, 2012 6. C. M. Tan, W. Li, and Z. Gan. “Applications of Finite element Methods for Reliability Study of ULSI Interconnections,” Microelectronics Reliability, vol. 52, no. 8, pp. 15391545, Aug. 2012. 7. Y. D. Han, S. M. L. Nai, H. Y. Jing, L. Y. Xu, C. M. Tan, and J. Wei. “Development of a SnAgCu solder reinforced with Nicoated carbon nanotubes,” Journal of Materials ScienceMaterials in Electronics, vol. 22, pp. 315322, 2011. 8. Y. C. Tan, C. M. Tan, X. W. Zhang, T. C. Chai, and D. Q. Yu. “Electromigration performance of through silicon via (TSV)  A modeling approach,” Microelectronics Reliability, vol. 50, no. 9, pp. 13361340, 2010. 9. Y. C. Tan, C. M. Tan, and T. C. Ng. “Addressing the challenges in solder resistance measurement for electromigration test,” Microelectronics Reliability, vol. 50, pp. 13521354, 2010. 10. C. M. Fu, C. M. Tan, S. H. Wu, and H. B. Yao. “Width dependence of the effectiveness of reservoir length in improving electromigration for Cu/lowK interconnects,” Microelectronics Reliability, vol. 50, pp. 13321335, 2010. 11. Y. D. Han, H. Y. Jing, S. M. L. Nai, L. Y. Xu, C. M. Tan, and J. Wei. “Indentation size effect on the creep behavior of a SnAgCu solder,” International Journal of Modern Physics B, vol. 24, no. 12, pp. 267275, 2010. 12. Han, Y.D.; Jing, H.Y.; Nai, S.M.L.; Xu, L.Y.; Tan, C.M.; Wei, J. “Temperature Dependence of Creep and Hardness of SnAgCu LeadFree Solder,” Journal of Electronic Materials, v 39, n 2, p 223229, February 2010 13. S. Z. Y. Loo, P. C. Lee, Z. X. Lim, N. Yantara, T. Y. Tee, C. M. Tan, and Z. Chen. “Interface fracture toughness assessment of solder joints using double cantilever beam test,” International Journal of Modern Physics B, vol. 24, no. 12, pp. 164174, 2010. 14. Y. D. Han, H. Y. Jing, S. M. L. Nai, L. Y. Xu, C. M. Tan, and J. Wei. “Nanomechanical properties of a SnAgCu solder reinforced with Nicoated carbon nanotubes,” International Journal of Nanoscience, vol. 9, no. 4, pp. 283287, 2009. 15. Han, Y.D.; Jing, H.Y.; Nai, S.M.L.; Tan, C.M.; Wei, J.; Xu, L.Y.; Zhang, S.R. ”A modified constitutive model for creep of Sn3.5Ag0.7Cu solder joints,”, Journal of Physics D: Applied Physics, v 42, n 12, 2009 16. J. G. Ma, M. Yao, and C. M. Tan. “Review of electromigration modeling of IC Interconnects,” Journal of the University of Electronic Science and Technology of China, vol. 38, no. 5, pp. 495504, 2009. 17. A. Roy, Y. Hou, and C. M. Tan. “Electromigration in width transition copper interconnect,” Microelectronics Reliability, vol. 49, pp. 10861089, 2009. 18. Y. Hou and C. M. Tan. “Comparison of stressinduced voiding phenomena in copper linevia structures with different dielectric materials,” Semiconductor Science and Technology, vol. 24, pp. 8501485022, 2009. 19. W. Li, C. M. Tan, and N. Raghavan. “Dynamic simulation of void nucleation during electromigration in narrow integrated circuit interconnects,” Journal of Applied Physics, vol. 105, no. 1, pp. 014305, 2009. 20. C. M. Tan and N. Raghavan. “A bimodal 3parameter lognormal mixture distribution for electromigration failures,” Thin Solid Films, vol. 516, pp. 88048809, 2008. 21. A. Roy and C. M. Tan. “Very high current density package level electromigration test for copper interconnects,” Journal of Applied Physics, vol. 103, no. 9, 2008. 22. Y. Hou and C. M. Tan. “Stressinduced voiding study in integrated circuit interconnects,” Semiconductor Science and Technology, vol.23, 2008. 23. A. Roy and C. M. Tan. “Probing into the asymmetric nature of electromigration performance of submicron interconnect via structure,” Thin Solid Films, vol. 515, no. 78, pp. 38673874, 2007. 24. W. Li, C. M. Tan, and Y. Hou. “Dynamic simulation of electromigration in polycrystalline interconnect thin film using combined Monte Carlo algorithm and finite element modeling,” Journal of Applied Physics, vol. 101, no. 10, pp. 104314, 2007. 25. W. Li and C. M. Tan. “Enhanced Finite Element Modelling of Cu Electromigration using ANSYS and Matlab,” Microelectronics Reliability, vol. 47, no. 911, pp. 14971501, 2007. 26. C. M. Tan and Y. Hou. “Lifetime modeling for stressinduced voiding in integrated circuit interconnections,” Applied Physics Letters, vol. 91, no. 6, pp. 061904, 2007. 27. C. M. Tan, N. Raghavan, and A. Roy. “Application of Gamma Distribution in Electromigration for Submicron Interconnects,” Journal of Applied Physics, vol. 102, no. 10, pp. 103703, 2007. 28. C. M. Tan and A. Roy. “Electromigration in ULSI Interconnects,” Materials Science and Engineering RReports, vol. 58, no. 12, pp. 175, 2007. 29. C. M. Tan and Y. Hou. “Revisit to the finite element modeling of electromigration for narrow interconnects,” Journal of Applied Physics, vol. 102, no. 3, pp. 33705, 2007. 30. C. M. Tan and A. Roy. “Investigation of the effect of temperature and stress gradients on accelerated EM test for Cu narrow interconnects,” Thin Solid Films, vol. 504, no. 12, pp. 288293, 2006. 31. C. M. Tan, W. Li, K. T. Tan, and F. Low. “Development of highly accelerated electromigration test,” Microelectronics Reliability, vol. 46, no. 911, pp. 16381642, 2006. 32. A. Roy, R. Kumar, C. M. Tan, T. Wong, and C. H. Tung. “Electromigration in damascene copper interconnects of line width down to 100 nm,” Semiconductor Science and Technology, vol. 21, pp. 1369, 2006. 33. A. Roy and C. M. Tan. “Experimental investigation on the impact of stress free temperature on the electromigration performance of copper dual damascene submicron interconnect,” Microelectronics Reliability, vol. 46, no. 911, pp. 16521656, 2006. 34. C. M. Tan, A. Roy, A. V. Vairagar, A. Krishnamoorthy, and S. G. Mhaisalkar. “Current crowding effect on copper dual damascene via bottom failure for ULSI applications,” IEEE Trans. on Device and Materials Reliability, vol. 5, no. 2, pp. 198, 2005. 35. A. Roy, C. M. Tan, R. Kumar, and X. T. Chen. “Effect of test condition and stress free temperature on the electromigration failure of Cu dual damascene submicron interconnect linevia test structures,” Microelectronics Reliability, vol. 45, no. 911, pp. 14431448, 2005. 36. C. M. Tan, A. Roy, K. T. Tan, D. Sim, K. Ye, and F. Low. “Effect of vacuum break after the barrier layer deposition on the electromigration performance of aluminum based line interconnects,” Microelectronics Reliability, vol. 45, no. 911, pp. 14491454, 2005. 37. C. M. Tan and G. Zhang. “Overcoming intrinsic weakness of ULSI metallization electromigration performances,” Thin Solid Films, vol. 462463, pp. 263268, 2004. 38. Z. L. Yuan, D. H. Zhang, C. Y. Li, K. Prasad, and C. M. Tan. “Study of Interactions between aTa films and SiO2 under rapid thermal annealing,” Thin Solid Films, vol. 462463, pp. 279, 2004. 39. Z. L. Yuan, D. H. Zhang, C. Y. Li, J. Sudijono, and C. M. Tan. “Thermal sStability of Cu/aTa/SiO2/Si structures,” Thin Solid Films, vol. 462463, pp. 284, 2004. 40. Z. W. Yang, D. H. Zhang, C. Y. Li, C. M. Tan, and K. Prasad. “Barrier layer effects on reliabilities of copper metallization,” Thin Solid Films, vol. 462463, pp. 288, 2004. 41. C. M. Tan, G. Zhang, and Z. Gan. “Dynamics Study of the physical processes in the Intrinsic line electromigration of deepsubmicron copper and aluminum interconnects,” IEEE Transactions on Device and Materials Reliability, vol. 4, no. 3, pp. 450456, 2004. 42. C. M. Tan and Z. Gan. “Failure mechanisms of aluminum bond pad peeling during thermosonic bonding,” IEEE Transactions on Device and Materials Reliability, vol. 3, no. 2, pp. 4450, 2003. 43. Z. L. Yuan, D. H. Zhang, C. Y. Li, K. Prasad, L. J. Tang, and C. M. Tan. “A new method for deposition of cubic Ta diffusion barrier for Cu metallization,” Thin Solid Films, vol. 434, no. 12, pp. 126129, 2003. 44. C. M. Tan and S. Y. Lim. “Application of wignerville distribution in electromigration noise analysis,” IEEE Transactions on Device and Materials Reliability, vol. 2, no. 2, pp. 3035, 2002. 45. C. M. Tan. “Effect of BOE etching time on wire bonding quality,” IEEE Transactions on Components and Packaging Technologies, vol. 22, no. 4, pp. 551557, 1999.
Nanotechnology
1. Shuai Zhang, Cher Ming Tan, Shuguang Cheng, Tianqi Deng, Feifei He and Haibin Su, “Ab initio simulation of electronic and mechanical properties of aluminium for fatigue early feature investigation”, International Journal of Nanotechnology, Vol.11, No.1/2/3/4, pp.373  385, 2014 2. Y.D Han, H.Y Jing, S.M.L Nai, L.Y. Xu, C.M Tan and J. Wei, “Interfacial reaction and shear strength of Ni coated carbon nanotubes reinforced SnAgCu solder joints during thermal cycling”, Intermetallics, 31, pp. 7278,2012 3. C. M. Tan, C. Baudot, Y. D. Han, and H. Jing. “Applications of multiwalled carbon nanotube in electronic packaging,” Nanoscale Research Letters, vol. 7, pp. 17, 2012. 4. J. H. Zhao, C. M. Tan, K. T. Beng, and S. A. F. Peel. “Effect of hydrophilicity of carbon nanotube arrays on the release rate and activity of recombinant human bone morphogenetic protein2,” Nanotechnology, vol. 22, no. 29, pp. 295712, 22nd Jul. 2011. 5. C. Baudot and C. M. Tan. “Covalent functionalization of carbon nanotubes and their use in dielectric epoxy composites to improve heat dissipation,” Carbon, vol. 49, no. 7, pp. 23622369, 2011. 6. C. Baudot, C. M. Tan, and J. C. Kong. “FTIR spectroscopy as a tool for nanomaterial characterization,” Infrared Physics & Technology, vol. 53, no. 6, pp. 4348, Nov. 2010. 7. S. Li, A. K. Ng, J. W. Rong, C. M. Tan, Y, Yang, and Y Chen. “Antibacterial action of dispersed singlewalled carbon nanotubes on Escherichia coli and Bacillus subtilis investigated by atomic force microscopy,” Nanoscale, vol. 2, no. 12, pp. 274450, Nov. 2010. 8. Z. Han, B. Tay, C. M. Tan, M. Shakerzadeh, and K. Ostrikov. “Electrowetting control of cassietowenzel transitions in superhydrophobic carbon nanotubebased nanocomposites,” ACS Nano, vol. 3, pp. 30313036, 2009. 9. C. Baudot and C. M. Tan. “Solubility, dispersion and bonding of functionalised carbon nanotubes in epoxy resins,” International Journal of Nanotechnology, vol. 6. No. 78, pp. 618627, 2009. 10. M. Gu, C. Q. Sun, C. M. Tan, and S. Wang. “Local bond average for the size and temperature dependence of elastic and vibronic properties of nanostructures,” International Journal of Nanotechnology, vol. 6, no. 78, pp. 640652, 2009. 11. A. Roy, C. M. Tan, S. OShea, H. Kedar, and W. Hofbauer. “Room temperature observation of point defect on gold surface using thermovoltage mapping,” Microelectronics Reliability, vol. 47, no. 911, pp. 15801584, 2007. 12. T. Xu, Z. Wang, J. Miao, X. Chen, and C. M. Tan. “Aligned carbon nanotubes for throughwafer interconnects,” Applied Physics Letters, vol. 91, no. 4, pp. 042108, 2007. 13. M. X. Gu, C. Q. Sun, Z. Chen, T. C. A. Yeung, S. Li, C. M. Tan, and V. Nosik. “Size, temperature and bond nature dependence of elasticity and its derivatives on extensibility, debye temperature, and heat capacity of nanostructures,” Physical Review B, vol. 75, no. 12, pp. 125403, 2007. 14. M. X. Gu, T. C. A. Yeung, V. Nosik, and C. M. Tan. “Change in thermal conductivity of cylindrical silicon nanowires induced by surface bonding modification,” Journal of Applied Physics, vol. 100, pp. 94304, 2006. 15. C. M. Tan, J. J. Jia, and W. Yu. “Temperature dependence of the field emission of multiwalled carbon nanotubes,” Applied Physics Letters, vol. 86, no. 26, pp. 263104, 2005. 16. C. M. Tan, J. M. Xu, and S. Zukotynski. “Electronic properties of nini doping superlattices,” Journal of Applied Physics, vol. 73, no. 6, pp. 2921, 1992. 17. C. M. Tan and J. Xu. “Assessment of the performance potential of a quantum resonant tunneling structure under current density constraint,” International Journal of Electronics, vol. 70, no. 4, pp. 703712, 1991. 18. C. M. Tan, J. Xu, and S. Zukotynski. “Study of resonant tunneling structures: a hybrid incremental airy function plane wave approach,” Journal of Applied Physics, vol. 67, no. 6, pp. 30113017, 1990.
Devices Reliability
1. Xiangchen Chen and Cher Ming Tan, “Modeling and analysis of gateallaround silicon nanowire FET” Microelectronics Reliability, Volume 54, Issues 6–7, Pages 1103–1108, June–July 2014. 2. Cher Ming Tan and Xiangchen Chen, “Degradation mechanisms in gateallaround silicon Nanowire field effect transistor under electrostatic discharge stress – a modeling approach”, Nanoconvergence, vol 1 (1), 2014. 3. Asenov A, Schlichtmann U.M. Cher Ming Tan, Hei Wong and Zhou Xing, “ICMAT 2011 – Reliability and variability of semiconductor devices and ICs”, Microelectronics Reliability, v 52(8), p. 1531, 2012 4. C. M. Tan and G. Huang. “Comparison of SOI and PSOI LDMOS using electricalthermalstress coupled field modeling,” IEEE Transactions on Electron Devices, vol. 58, no. 10, pp. 3494500, Oct. 2011. 5. G. Huang and C. M. Tan. “Electricalthermalstress coupledfield effect in SOI and partial SOI lateral power diode,” IEEE Transactions on Power Electronics, vol. 26, no. 6, pp. 17231732, 2011. 6. J. Liao, C. M. Tan and G. Spierings. “Hot carrier reliability of power SOI EDNMOS,” IEEE Transactions on Power Electronics, vol. 25, no. 7, pp. 168591, 2010. 7. J. Liao, C. M. Tan and G. Spierings. “Behavior of hot carrier generation in power SOI LDNMOS with shallow trench isolation (STI),” Microelectronics Reliability, vol. 49, pp. 10381043, 2009. 8. C. M. Tan and N. Raghavan. “An approach to statistical analysis of gate oxide breakdown mechanisms,” Microelectronics Reliability, vol. 47, no. 911, pp. 13361342, 2007. 9. C. M. Tan and G. Huang. “Reverse breakdown voltage measurement for power P+NN+ rectifier,” Journal of Electronic TestingTheory and Applications, vol. 24, no. 5, pp. 473479, 2007. 10. G. Huang and C. M. Tan. “Device level electricalthermalstress coupledfield modeling,” Microelectronics Reliability, vol. 46, no. 911, pp. 18231827, 2006. 11. C. M. Tan, Z. Gan, W. F. Ho, S. Chen, and R. Liu. “Determination of the dice forward IV characteristics of a power diode from a packaged device and its applications,” Microelectronics Reliability, vol. 45, no. 1, pp. 179184, 2005. 12. C. M. Tan, J. Chiu, R. Liu, and G. Zhang. “Reliability screening through electrical testing for pressfit alternator power diode in automotive application,” Microelectronics Reliability, vol. 45, no. 911, pp. 17231727, 2005. 13. Z. Gan and C. M. Tan. “Thermally induced stress in partial SOI structure during high temperature processing,” Microelectronic Engineering, vol. 71, no. 2, pp. 150162, 2004. 14. C. M. Tan, Z. Gan, and X. Gao. “Temperature and stress distribution in the SOI structure during fabrication,” IEEE Transactions on Semiconductor Manufacturing, vol. 16, no. 2, pp. 314318, 2003. 15. C. M. Tan and K. J. Tseng. “Using power diode models for circuit simulations  a comprehensive review,” IEEE Transactions on Industrial Electronics, vol. 46, no. 3, pp. 637645, 1999.
Prognosis and Health Mgt
1. M.D. Le and C.M. Tan, “Maintenance Scheduling of Plasma Etching Chamber in Wafer Fabrication for high yield etching process”, IEEE Trans. On Semiconductor Manufacturing, Volume:27, Issue: 2 Page(s):204  211, May 2014 2. M. D. Le and C. M. Tan. “Optimal maintenance strategy of deteriorating system under imperfect maintenance & inspection using mixed inspection scheduling,” Reliability Engineering & System Safety, V. 113(1), p. 2129, Jan. 2013. 3. C. M. Tan. “Recent developments in engineering system maintenance,” The Singapore Engineer Magazine, Dec. 2012. 4. C. M. Tan and N. Raghavan. “Reply to comments on "A framework to practical predictive maintenance modeling for multistate systems,"” Reliability Engineering & System Safety, vol. 94, no. 3, pp. 781782, 2009. 5. C. M. Tan and N. Raghavan. “A framework to Practical Predictive Maintenance Modeling for MultiState Systems,” Reliability Engineering & System Safety, vol. 93, pp. 1138, 2008. 6. C. M. Tan and N. Raghavan. “Root cause analysis based maintenance policy,” International Journal of Quality and Reliability Management, 24(2), 203228, 2007.
Wafer Bonding
1. C. M. Tan, W. Yu, and W. Jun. “Comparison of mediumvacuum and plasmaactivated lowtemperature wafer bonding,” Applied Physics Letters, vol. 88, no. 11, pp. 114102, 2006. 2. C. M. Tan, S. Deng, J. Wei, W. B. Yu, S. M. L. Nai, and H. Xie. “Low temperature solgel intermediate layer wafer bonding,” Thin Solid Films, vol. 496, no.2, pp. 560, 2006. 3. C. M. Tan, S. Deng, J. Wei, and W. B. Yu. “Mechanism of solgel intermediate layer low temperature wafer bonding,” Journal of Physics DApplied Physics, vol. 38, no. 8, pp. 13081312, 2005. 4. W. B. Yu, C. M. Tan, J. Wei, S. S. Deng, and G. Huang. “Effect of medium vacuum on low temperature wafer bonding,” Journal of Micromechanics and Microengineering, vol. 15, no. 5, pp. 1001, 2005. 5. W. B. Yu, J. Wei, and C. M. Tan. “Mathematical model for lowtemperature wafer bonding under medium vacuum and its application,” IEEE Transactions on Advanced Packaging, vol. 28, no. 4, pp. 650658, 2005. 6. W. B. Yu, C. M. Tan, J. Wei, S. S. Deng, and S. M. L. Nai. “Influence of applied load on vacuum wafer bonding at low temperature,” Sensors and Actuators APhysical, vol. 115, no. 1, pp. 6772, 2004. 7. S. S. Deng, J. Wei, C. M. Tan, S. M. L. Nai, W. B. Yu, and H. Xie. “Low temperature silicon wafer bonding by solgel processing,” International Journal of Computational Engineering Science, vol. 4, no. 3, pp. 655658, 2003.
Integrated Circuit Reliability
1. F. He and C. M. Tan. “3D simulationbased research on the effect of interconnect structures on circuit reliability,” World Journal of Modelling and Simulation, vol. 8, no. 4, pp. 271284, Nov. 2012. 2. S. Lan, C. M. Tan, and K. Wu. “Reliability study of LED driver  a case study of black box testing,” Microelectronics Reliability, vol. 52, no. 910, pp. 19404, Sep.Oct. 2012. 3. F. He and C. M. Tan. “Effect of IC layout on the reliability of CMOS amplifiers,” Microelectronics Reliability, vol. 52, no. 8, pp. 157580, Aug. 2012. 4. F. He and C. M. Tan. “Comparison of electromigration simulation in test structure and actual circuit,” Applied Mathematical Modelling, vol. 36, no. 10, pp. 49084917, Oct. 2012. 5. F. He and C. M. Tan. “Electromigration reliability of interconnections in RF low noise amplifier circuit,” Microelectronics Reliability, vol. 52, no. 2, pp. 446454, Feb. 2012 6. F. He and C. M. Tan. “Modeling the effect of barrier thickness and lowk dielectric on circuit reliability using 3D model,” Microelectronics Reliability, vol. 50, pp. 13271331, 2010. 7. F. He and C. M. Tan. “Circuit level interconnect reliability study using 3D circuit model,” Microelectronics Reliability, vol. 50, no. 3, pp. 376390, 2010.
Failure Analysis
1. Cher Ming Tan and Wenzhi Yu, “Damage Threshold Determination and Nondestructive Identification of Possible Failure Sites in PIN Limiter”, Microelectronics Reliability, vol. 54, pp. 960964, 2014. 2. C. M. Tan, S. Yanuar, and T. C. Chai. “Finite element modeling of capacitive coupling voltage contrast,” Microelectronics Reliability, vol. 47, no. 911, pp. 15551560, 2007. 3. C. M. Tan, Z. Gan, and T.C. Chai. “Feasibility study of the application of voltage contrast to printed circuit board,” Microelectronics Reliability, vol. 46, no. 56, pp. 939948, 2006. 4. C. M. Tan, K. P. Lim, T. C. Chai, and J. Lim. “Nondestructive identification of open circuit in wiring on organic substrate with high wiring density covered with solder resist,” Microelectronics Reliability, vol. 45, no. 911, pp. 15721575, 2005. 5. C. M. Tan, K. M. Ang, L. H. Tay, and Y. M. Tan. “Investigation of weightonwheel switch failure in F16 aircraft,” Engineering Failure Analysis, vol. 12, no. 4, pp. 508519, 2005. 6. Z. Gan, C. M. Tan, and G. Zhang. “Nondestructive void size determination in copper metallization under passivation,” IEEE Transactions on Device and Materials Reliability, vol. 3, no. 3, pp. 6978, 2003. 7. C. M. Tan, E. Er, Y. Hua, and V. Chai. “Failure analysis of bond pad metal peeling using FIB and AFM,” IEEE Transactions on Components and Packaging Technologies, vol. 21, no. 4, pp. 585591, 1998.
Reliability Statistics
1. C. M. Tan and N. Raghavan. “Unveiling the electromigration physics of ULSI interconnects through statistics,” Semiconductor Science and Technology, vol. 22, no. 8, pp. 941946, 2007. 2. G. Zhang, C. M. Tan, K. T. Tan, K. Y. Sim, and W. Y. Zhang. “Reliability improvement in Al metallization: a combination of statistical prediction and failure analytical methodology,” Microelectronics Reliability, vol. 44, no. 911, pp. 18431848, 2004. 3. C. M. Tan and K. N. C. Yeo. “A reliability statistics perspective on the pitfalls of standard waferlevel electromigration accelerated test (SWEAT),” Journal of Electronic TestingTheory and Applications, vol. 17, no. 1, pp. 6368, 2001.
LED Reliability
1. C.M. Tan and P. Singh, “Time Evolution Degradation Physics in High Power White LEDs Under High TemperatureHumidity Conditions”, IEEE Trans. On Devices and Materials Reliability, Vol. 14, no. 2, pp. 742750, June 2014. 2. Cher Ming Tan, Sihan Chen, Jacky Kong, “Effects of carbon loading on the performance of functionalized carbon nanotube polymer heat sink for high power lightemitting diode in switching applications”, IEEE Trans. Nanotechnology, 12(6), p. 11041110, 2013. 3. C. M. Tan and C. S. Lai. “Systematic root cause analysis for GaP green light LED degradation,” IEEE Trans. On Devices and Materials Reliability, Vol. 13, n 1, p 156160, 2013 4. S. H. Chen, C. M. Tan, G. H. Tan, and F. He. “Degradation behavior of high power light emitting diode under high frequency switching,” Microelectronics Reliability, vol. 52, no. 910, pp. 21682173, Sep.Oct. 2012. 5. C. M. Tan, S. H. Chen, and E. Chen. “Rapid light output degradation of GaN based packaged LED in the early stage of humidity test,” IEEE Transactions on Device and Materials Reliability, vol. 12, no. 1, pp. 4448, Mar. 2012. 6. S. H. Chen, C. M. Tan, and E. Chen. “Ensuring accuracy in optical and electrical measurement of ultrabright LEDs during reliability test,” Microelectronics Reliability, vol. 52, no. 8, pp. 16325, Aug. 2012. 7. C. M. Tan, B. K. E. Chen, G. Xu, and Y. Liu. “Analysis of humidity effects on the degradation of highpower white LEDs,” Microelectronics Reliability, vol. 49, pp. 12261230, 2009.
Quality
1. C. M. Tan. “Identifying key parameters for risk based inspections (RBI),” Hydrocarbon Asia, pp. 6064, 2004. 2. C. M. Tan. “Methodology for customers focus buildin reliability,” International Journal of Quality and Reliability Management, vol. 20, no. 3, pp. 378397, 2003.
Battery
1. Feng Leng, Cher Ming Tan, Rachid Yazami and Minh Duc Le, “A practical framework of electrical based online stateofcharge estimation of lithium ion batteries”, Journal of Power Sources, vol. 255, pp. 423430, 2014 2. Zhitao Liu, Cher Ming Tan, Feng Leng, “A reliability based design concept for Lithiumion battery pack in electric vehicle”, Reliability Engineering & System safety, 134, pp. 169177, 2015
Others
1. Z. Wu, X. Tian, Z. Wang, C. Gong, S. Yang, C. M. Tan, and P. K. Chu. “Microstructure and mechanical properties of CrN films fabricated by high power pulsed magnetron discharge plasma immersion ion implantation and deposition,” Applied Surface Science, vol. 258, no. 1, pp. 2426, 15th Oct. 2011. 2. C. M. Tan, B. K. Chen, and K. P. Toh. “Humidity study of aSi PV cell,” Microelectronics Reliability, vol. 50, pp. 18711874, 2010. 3. Z. Gan, G. Yu, Z. Zhao, C. M. Tan, and B. K. Tay. “Mechanical properties of Zirconia Thin Films deposited by filtered cathodic vacuum arc,” Journal of the American Ceramic Society, vol. 88, no. 8, pp. 22272229, 2005. 4. P. Zhao, E. Rusli, J. H. Xia, C. M. Tan, Y. Liu, C. C. Tin, S. F. Yoon, W. G. Zhu, and J. Ahn. “Study of carbon in thermal oxide formed on 4HSiC by XPS,” Silicon Carbide and Related Materials 2004, Material Science Forum, vol. 483485, pp. 653656, 2005. 5. Z. Gan, Y. Zhang, G. Yu, C. M. Tan, S. P. Lau, and B. K. Tay. “Intrinsic mechanical properties of diamondlike carbon thin films deposited by filtered cathodic vacuum arc,” Journal of Applied Physics, vol. 95, no. 8, pp. 3509, 2004. 6. Yuan, Z.L.; Zhang, D.H.; Li, C.Y.; Prasad, K.; Tan, C.M. “Study of interactions between αTa films and SiO2 under rapid thermal annealing,” Thin Solid Films, v 462463, p 279283, September 2004 7. Yuan, Z.L.; Zhang, D.H.; Li, C.Y.; Prasad, K.; Tan, C.M. “Thermal stability of Cu/αTa/SiO2/Si structures”, Thin Solid Films, v 462463, p 284287, September 2004 8. Z. H. Gan, G. Q. Yu, B. K. Tay, C. M. Tan, Z. W. Zhao, and Y. Q. Fu. “Preparation and characterization of copper oxide thin films deposited by filtered cathodic vacuum arc,” Journal of Physics DApplied Physics, vol. 37, no. 1, pp. 8185, 2004. 9. S. Zukotynski, F. Gaspari, N. Kherani, T. Kosteski, K. Law, W. T. Shmayda, C. M. Tan. “Metastability in tritiated amorphous silicon,” Journal of NonCrystalline solids, vol. 299302, Part 1, pp. 476481, 2002. 10. C. M. Tan, S. Zukotynski, and H. Mar. “Effect of Current Density on the Electrochemical Dissolution of Germanium and Zinc Selenide,” Journal of the Electrochemical Society, vol. 137, no. 2, pp. 39703972, 1990. 11. C. M. Tan and S. Zukotynski. “Single Wafer Miniature HallEffect Keyboard,” IEEE Transactions on Industrial Electronics, vol. 36, no. 3, pp. 446450, 1989.
CONFERENCE PAPERS
Interconnects Reliability
1. Cher Ming Tan and Udit Narula, “Revisit resistance monitoring techniques for measuring TSV/solder resistance during electromigration test”, Invited talk in IEEE International Conference on solid state and integrated circuit technology, Guiling, China, 2014 2. Cher Ming Tan, “Extending electromigration modeling from test structures to Integrated circuit layout level”, Invited talk in International Reliability Physics Symposium, 2014, USA 3. J. Zhang, K. Ghosh, L. Zhang, Y. Dong, H. Y. Li, C. M. Tan, G. Xia, and C. S. Tan, “TSV scaling with constant liner thickness and the related implications on thermomechanical stress, capacitance, and leakage current,” in Int. Conf. on Solid State Devices and Materials, Kyoto, Japan, 2527th Sep. 2012. 4. K. Ghosh, J. Zhang, L. Zhang, Y. Dong, H. Y. Li, C. M. Tan, G. Xia, and C. S. Tan, “Strategy for TSV scaling with consideration on thermomechanical stress and acceptable delay,” in Int. Microsystems, Packaging, Assembly Circuits Technology Conf., Taipei, Taiwan, 2426th Oct. 2012. 5. C. M. Tan and C. Fu. “Effectiveness of Reservoir Length on Electromigration lifetime enhancement for ULSI Interconnects with advanced technology nodes (Invited Talk),” in Proc. of IEEE ICSICT, Xi’an, China, 29th Oct.  1st Nov. 2012. 6. W. Li and C. M. Tan. “Black’s equation for today’s ULSI interconnect electromigration (invited),” in Proc. of IEEE Electron Devices and Solid State Circuits, China, 2011. 7. C. M. Tan, Z. Gan, and W. Li. “Applications of Finite element Methods for Reliability Study of ULSI Interconnections (Invited Talk),” presented at Int. Conf. on Materials for Advanced Technologies, Singapore, Jul. 2011. 8. S. M. L Nai, Y. D. Han, H. Y. Jing, L. Y. Xu, C. M. Tan, and J. Wei. “Ageing study of interfacial intermetallic growth in a leadfree solder reinforced with Nicoated carbon nanotubes,” in IEEE Electronics Packaging Technology Conf., 2010. 9. Y. D. Han, H. Y. Jing, S. M. L. Nai, L. Y. Xu, C. M. Tan, and J. Wei. “Indentation creep and hardness of a SnAgCu solder reinforced with Ni coated carbon nanotubes,” in IEEE Int. Nanoelectronic Conf., Hong Kong , 2010, pp. 292295. 10. Y. Hou and C. M. Tan. “Requirement for accurate interconnect temperature measurement for Electromigration test,” in IEEE Int. Symp. on Integrated Circuits, Singapore, 2009. 11. S. M. L. Nai, Y. D. Han, H. Y. Jing, C. M. Tan, and J. Wei. “Enhancing the properties of a Leadfree solder with the addition of Ni coated carbon nanotubes,” in Int. Conf. on Electronic Packaging Technology & High Density Packaging, China, 2009, pp. 540543. 12. Y. D. Han, S. M. L Nai, Y. C. Liu, C. M. Tan, and J. Wei. “Indentation size effect on the hardness of a SnAgCu Solder,” in Int. Mechanical Engineering Congress and Exposition, 2009. 13. Y. D. Han, H. Y. Jing, S. M. L. Nai, Y. C. Liu, C. M. Tan, J. Wei, and L. Y. Xu. “Nanomechanical properties of a SnAgCu solder reinforced with Ni coated carbon nanotubes,” in Int. Conf. on Materials for Advanced Technologies, 2009. 14. Y. D. Han, H. Y. Jing, S. M. L. Nai, Y. C. Liu, C. M. Tan, J. Wei, and L.Y. Xu. “Indentation size effect on the creep behavior of a SnAgCu solder,” in Int. Conf. on Materials for Advanced Technologies, 2009. 15. C. M. Tan and Y. Liu. “Finite element modeling of Electromigration in ULSI Interconnections and in solder bumpings of a package system,” Tutorial in IEEE Int. Electronic Packaging and Technology Conf., 2008. 16. Y. Hou and C. M. Tan. “The multiple temperature heater platforms for solder Electromigration test conducted at room temperature,” in IEEE Electronics Packaging Technology Conf., Singapore, 2008. 17. Y. D. Han, C. M. Tan and W. Jun. “A new creep model for SnAgCu leadfree composite solders: incorporating back stress,” in IEEE Electronics Packaging Technology Conf., Singapore, 2008. 18. P. Cheng, A. Lee, Z. X. Lim, N. Yantara, S. Z. Y. Loo, T. Y. Tee, C. M. Tan and Z. Chen. “Fracture Toughness Assessment of a solder joint using double cantilever beam specimens,” in IEEE Electronics Packaging Technology Conf., Singapore, 2008. 19. C. M. Tan and W. Li. “A holistic numerical modeling for interconnect electromigration,” (invited) presented at Int. Materials Research Society Conf., Chongqing, China, Jun. 2008. 20. Y. Hou and C. M. Tan. “Size effect in Cu nanointerconnects and its implication on electromigration,” presented at IEEE Int. Nanoelectronics Conf., Shanghai, China, Mar. 2008. 21. W. Li and C. M. Tan. “Enhanced finite element modelling of Cu electromigration using ANSYS and Matlab,” in European Symp. on Reliability of Electron Devices, Failure physics and analysis, 2007. 22. C. M. Tan. “Electromigration in ULSI Interconnection (keynote),” in 1st Microreliability and Nanoreliability Congress, 2007. 23. Y. Hou and C. M. Tan. “Blech effect in Cu interconnects with oxide and lowk dielectrics,” in Int. Symp. on physical and failure analysis of integrated circuits, 2007. 24. A. Roy and C. M. Tan. “Experimental investigation on the impact of stress free temperature on the electromigration performance of copper dual damascene submicron interconnect,” in European Symp. on Reliability of Electron Devices, Failure physics and analysis, 2006. 25. C. M. Tan, W. Li, K. T. Tan, and F. Low. “Development of highly accelerated electromigration test,” in European Symp. on Reliability of Electron Devices, Failure physics and analysis, 2006. 26. W. Li and C. M. Tan. “Dynamic simulation of electromigration in polycrystalline thin film using combined Monte Carlo algorithm and finite element modeling,” in Symp. on Microelectronics, 2006. 27. A. Roy, C. M. Tan, R. Kumar, and X. T. Chen. “Effect of test condition and stress free temperature on the electromigration failure of Cu dual damascene submicron interconnect linevia structures,” in European Symp. on Reliability of Electron Devices, Failure physics and Analysis, 2005. 28. C. M. Tan, A. Roy, K. T. Tan, D. S. K. Ye, and F. Low. “Effect of vacuum break after the barrier layer deposition on the electromigratioin performance of aluminum based line interconnects,” in European Symp. on Reliability of Electron Devices, Failure physics and Analysis, 2005. 29. A. Roy and C. M. Tan. “Extrapolation of electromigration reliability assessment from accelerated test for submicron interconnect via structure,” in Int. Conf. on Materials for advanced technologies, 2005. 30. C. M. Tan. “Is electron wind force the sole driving force in electromingration of ULSI interconnection? (invited)” in Int. Conf. on Materials for Advanced Technologies, 2005. 31. Y. K. Lim, A. Roy, K. L. Pey, C. M. Tan, C. S. Seet, T. J. Lee, and D. Vigar. “Stress migration reliability of wide Cu interconnects with Gouging Vias,” in Int. reliability physics Symp., 2005, pp. 203. 32. G. Zhang, C. M. Tan, K. T. Tan, K. Y. Sim, and W. Y. Zhang. “Reliability improvement in Al metallization: a combination of statistical prediction and failure analytical methodology,” in European Symp. on Reliability of Electron Devices, Failure physics and analysis, 2004, pp. 18431848. 33. A. Roy, C. M. Tan, V. V. Anand, K. Ahila, G. Zhang, and M. G. Subodh. “Effect of current crowding on copper dual damascene via bottom failure for ULSI applications,” in Int. Symp. on Physical and Failure Analysis of Integrated Circuits, 2004. 34. A. Roy and C. M. Tan. “Current crowding effect on submicron copper dual damascene via bottom failure,” in Symp. on Microelectronics, 2004. 35. C. M. Tan and G. Zhang. “Overcoming intrinsic weakness of ULSI metallization on electromigration performances,” in Int. Conf. on Materials for Advanced Technologies, 2003. 36. H. S. Park, J. K. Low, C. M. Tan, and A. See. “Effects of Cu surface cleanness on electromigration reliability of Cu interconnects,” in Int. Conf. on Materials for Advanced Technologies, 2003. 37. C. M. Tan and G. Zhang. “Investigation of the physical processes during electromigration of ULSI interconnection (invited),” in ANSYS User Meeting, 2003. 38. C. M. Tan, A. C. M. Lim, C. T. Y. Tai, G. Zhang, H. S. Park, and S. M. Ong. “Effect of temperature uniformity of hot chuck on wafer level reliability electromigration test,” in JEDEX Conf., 2003. 39. G. Zhang, C. M. Tan, Z. Gan, K. Prasad, and D. H. Zhang. “Comparison of the timedependent physical processes in the electromigration of deep submicron copper and aluminum interconnects,” in Materials Research Society Spring meeting, 2003. 40. Z. L. Yuan, C. Y. Lia, D. H. Zhang, K. Prasad, C. M. Tan, Y. J. Yuan, P. W. Lu, R. Kumar, and P. D. Foo. “Improvement of Ta diffusion barrier by NH3 plasma pretreatment,” in Int. Semiconductor Technology Conf., 2002. 41. Z. L. Yuan, D. H. Zhang, C. Y. Li, K. Prasad, C. M. Tan, R. Kumar, and P. D. Foo. “Characterization of aTa diffusion barrier for copper metallization,” in VMIC, 2002. 42. Z. L. Yuan, D. H. Zhang, C. Y. Li, K. Prasad, C. M. Tan, Y. J. Yuan, P. W. Lu, R. Kumar, and P. D. Foo. “Cubic Ta diffusion barrier layers for Cu metallization,” in 2nd Int. Semiconductor Technology Conf., 2002. 43. C. M. Tan, W. L. See, and J. K. C. Tey. “Analysis of electromigration test data,” in IEEE 6th Int. Conf. on Solidstate and Integrated Circuit Technology, 2001, pp. 964. 44. S. Y. Lim, C. M. Tan, K. Prasad, and D. H. Zhang. “Uncover the diffusion mechanism of atoms during electromigration test using nonstationary noise analysis,” in 6th Int. Conf. on Solidstate and integrated circuit Technology, 2001, pp. 921.
Nanotechnology
1. Cher Ming Tan and Xiangchen, “Random dopant fluctuation in Gateallaround nanowire FET”, Invited talk in IEEE International Nanoelectronics Conference, Hokkaido, Japan, 2014 2. Cher Ming Tan and Xiangchen Chen, “ESD Degradation Modeling of GateAllAround Silicon Nanowire Device”, (Invited Talk), to be presented in Collaborative Conference on Materials Research, Korea 2013 3. Xiangchen Chen and Cher Ming Tan, “Modeling and Analysis of GateAllAround Silicon Nanowire FET”, to be presented in International Conference on Materials for Advanced Technologies, Singapore 2013 4. S. Cheng, C. M. Tan, T. Deng, F. He, S Zhang, and H. Su. “Investigation of work function and surface energy of aluminum  an ABInitio study,” in 5th IEEE Int. Nanoelectronics Conf., Singapore, 2nd4th Jan. 2013. 5. S. H. Chen, C. M. Tan, E. Tan, and J. Kong. “Effects of carbon loading on the performance of functionalized carbon nanotube polymer heat sink for ultra high power lightemitting diode,” in 5th IEEE Int. Nanoelectronics Conf., Singapore, 2nd4th Jan. 2013. 6. C. M. Tan, C. Baudot, Y. D. Han, and H. Jing. “Applications of multiwalled carbon nanotube (invited),” in IEEE Int. Nanoelectronics Conf., Taiwan, Jun. 2011. 7. S. H. Chen, C. M. Tan, M. H. Tan, and B. K. Chen. “Performance evaluation of covalently functionalized carbon nanotube polymer heat sink for ultra high power LED,” in IEEE Int. Nanoelectronics Conf., Taiwan, Jun. 2011. 8. Y. D. Han, L. Y. Xu, H. Y. Jing, C. M. Tan, S. M. L Nai, and J. Wei. “Effect of Nicoated carbon nanotubes on the microstructure and properties of a SnAgCu solder,” in 60th IEEE Electronic Components and Technology Conf., 2010. 9. Y. D. Han, H. Y. Jing, S. M. L. Nai, L. Y. Xu, C. M. TAN, and J. Wei. “Effect of Nicoated carbon nanotubes on interfacial intermetallic layer growth,” in 11th Electronic Packaging Technology Conf., Singapore, 2009, pp. 292295. 10. C. Baudot, C. M. Tan, J. Kong, F. Buonocore, and A. DiMateo. “Application of FTIR for the study of functional molecules grafting on carbon nanotubes,” presented at Advanced Materials for Nanotechnology, New Zealand, May 2009. 11. S. M. L. Nai, Y. D. Han, H. Y. Jing, C. M. Tan, and J. Wei. “Using nanoparticles and carbon nanotubes to enhance the properties of a lead free solder,” in 12th Nanotechnology Conf. & Expo, USA, 2009, pp. 538541. 12. C. Baudot, C. M. Tan, and C. Wang. “Nanotailoring of carbon nanotube as nanofillers for composite materials applications,” presented at IEEE Int. Nanoelectronics Conf., Shanghai, China, Mar. 2008. 13. M. Gu, C. Q. Sun, C. M. Tan, and S. Wang. “Methodologies for size, and temperature dependent change of materials properties,” presented at IEEE Int. Nanoelectronics Conf., Shanghai, China, Mar. 2008. 14. A. Roy, C. M. Tan, S. OShea, and W. Hofbauer. “Room temperature observation of point defect on gold surface using thermovoltage mapping,” in European Symp. on Reliability of Electron Devices, Failure physics and analysis, 2007. 15. C. M. Tan, J. Jia, L. K. Ang, K. T. Ng, and Y. C. Foo. “Effect of high voltage annealing on the field emission of multiwalled carbon nanotube film,” in 5th IEEE Conf. on Nanotechnology, 2005, pp. 638641. 16. L. Huang, S. P. Lau, C. M. Tan, Z. Sun, and B. K. Tay. “Growth of carbon nanotubes using ZrFe catalyst layer and their field emission properties,” in Int. Conf. on Materials for Advanced Technologies, 2003.
Devices Reliability
1. C. M. Tan, L. Sun, N. Raghavan, C. Hsu, and C. Wang. “Comparative study of nonstandard power diodes,” in IEEE Conf. on Industrial Electronics and Applications, 2009. 2. G. Huang and C. M. Tan. “Device level electricalthermalstress coupledfield modeling,” in European Symp. on Reliability of Electron Devices, Failure physics and analysis, 2006. 3. G. Huang and C. M. Tan. “Device temperature and stress distributions in power diode  a finite element method,” in Int. Conf. on power electronics and drive systems, 2005, pp. 700703. 4. C. M. Tan, J. Chiu, R. Liu, and G. Zhang. “Reliability screening through electrical testing for pressfit alternator power diode in automotive application,” in European Symp. on Reliability of Electron Devices, Failure physics and Analysis, 2005. 5. C. M. Tan, Z. Gan, W. F. Ho, S. Chen, and R. Liu. “Determination of the dice forward IV characteristics of a power diode from a packaged device and its applications,” in Int. Conf. on power electronics and motion control, 2004. 6. G. Huang, C. M. Tan, Z. Gan, G. Zhang, W. Yu, and W. Jun. “Finite element modeling of internal mechanical stress in partial SOI structure during wafer bonding processing,” in Int. Symp. on Physical and Failure Analysis of Integrated Circuits, 2004. 7. C. M. Tan, Z. Gan, W. F. Ho, R. Liu, and S. Chen. “New useful information from simple forward IV measurement of a power diode,” in 4th Int. Power Electronics and Motion Control Conf., China, 2004. 8. C. M. Tan, Y. F. Wong, P. H. Teoh, G. Huang. “Improving the reverse blocking capability of carrier stored trenchgate bipolar transistor,” in Int. Conf. on Power Electronics and Drive Systems, 2003. 9. C. M. Tan and Z. Gan. “Effectiveness of delta VF test to detect solder integrity in power diode,” in Int. Conf. on Power Electronics and Drive Systems, 2003, pp. 3842. 10. X. F. Gao, C. M. Tan, and W. L. Goh. “Thermal stress distribution in the SOI structure,” in 8th Int. Symp. on Integrated Circuits, Devices & Systems, 1999, pp. 394397.
Prognosis and Health Mgt
1. C. M. Tan, M. D. Le, and F. Leng. “SoC and SoH Estimation of battery cell and modules for electric vehicles (Keynote Talk),” in IEEE Annual PHM Conf., Beijing, China, 22nd24th May 2012. 2. C. M. Tan, M. D. Le, and F. Leng. “Estimation of SoC/SoH of cell and RUL of battery pack for EV Application (Invited Talk),” in IEEE Battery Management Systems for High Operational Availability and Safety Conf., Shenzhen, China, 21st May 2012. 3. C. M. Tan. “Recent Development of Reliability and Maintenance (Invited Talk),” in TUV SÜD PSB Testing, Inspection and Certification Conf., Singapore, Sep. 2012. 4. C. M. Tan and M. D. Le. “Contamination Assessment of Inductive Couple Plasma Etching Chamber under Mixture of Recipes using Statistical Method,” in IEEE Electron Devices and Solid State Circuits, China, 2011. 5. C. M. Tan and N. Raghavan. “Imperfect predictive maintenance model for multistate systems with multiple failure modes and element failure dependency,” in Prognostics & System Health Management Conf., Macau, 2010, pp. MU3006. 6. C. M. Tan and N. Raghavan. “A comprehensive predictive maintenance model for equipment maintenance in the semiconductor industry,” in Advanced Process control for semiconductor Manufacturing, 2006. 7. C. M. Tan and N. Raghavan. “A cost model for the predictive maintenance policy of a multistate system,” in 10th Maintenance and Reliability Conf., 2006. 8. N. Raghavan and C. M. Tan. “Examine the impact of maintenance policy for predictive maintenance,” in Int. Conf. on Quality and Reliability, 2005, pp. 745752. 9. C. M. Tan. “Maintenance policy for predictive maintenance (invited),” presented at 6th Annual Plant Reliability and Maintenance, Kuala Lumpur, Dec. 2005. 10. C. M. Tan. “Predictive maintenance and its impact to business decision (invited),” presented at Strategic Maintenance Congress, Dec. 2005. 11. C. M. Tan, B. K. Khoo, and J, Png. “Determining maintenance strategy from root cause analysis and reliability data analysis (invited),” presented at Annual Reliability, Availability, Maintainability and Safety Conf., Kuala Lumpur, Jun. 2004. 12. C. M. Tan, B. K. Khoo. “Application of FMEA for buildin reliability and maintenance (invited),” presented at Industrial Talk, 2004.
Wafer Bonding
1. C. M. Tan, W. B. Yu, and J. Wei. “Making wafer bonding viable for mass production,” in Materials Research Society Spring Meeting, 2005. 2. Wei, J.; Deng, S.S.; Tan, C.M. “Solgel coating facilitating SitoSi wafer bonding at low temperature,” in American Society of Mechanical Engineers, Electronic and Photonic Packaging, EPP, v 5, p 225229, 2005, Electronic and Photonic Packaging, Integration and Packaging of Micro/Nano/Electronic Systems – 2005 3. Guangyu Huang; Cher Ming Tan; Zhenghao Gan; Wei Jun; Guan Zhang; Weibo Yu “Finite element modeling of residual mechanical stress in partial SOI structure due to wafer bonding processing,” in Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2004 (IEEE Cat. No.04TH8743), p 18992, 2004 4. J. Wei, S. S. Deng, C. M. Tan, and C. K. Wong. “Low temperature SitoSi wafer bonding with SolGel coating as intermediate layer,” in IEEE Electronics Packaging Technology Conf., Singapore, 2004. 5. S. S. Deng, J. Wei, C. M. Tan, W. B. Yu, S. M. L. Nai, and H. Xie. “Low temperature wafer bonding process using solgel intermediate layer,” in Int. Mechanical Engineering Congress and Exposition, 2004. 6. W. B. Yu, J. Wei, C. M. Tan, and S. S. Deng. “Low temperature wafer bonding in medium vacuum,” in Int. Mechanical Engineering Congress and Exposition, 2004. 7. S. S. Deng, J. Wei, C. M. Tan, and W. B. Yu. “Silicontosilicon wafer bonding by tempered solgel intermediate layer,” in Thin Film and Nanotech, 2004. 8. S. S. Deng, C. M. Tan, J. Wei, S. M. L. Nai, and W. B. Yu. “Silicontosilicon wafer bonding efficiency by solgel process,” in 5th Electronics Packaging Technology Conf., 2003. 9. W. Yu, C. M. Tan, J. Wei, S. Deng, and S. M. L. Nai. “Influence of plasma treatment and cleaning on vacuum wafer bonding,” in 5th Electronics Packaging Technology Conf., 2003. 10. S. S. Deng, J. Wei, C. M. Tan, S. M. L. Nai, H. Xie, and W. B. Yu. “Low temperature silicon wafer bonding by solgel processing,” in Int. Conf. on Materials for Advanced Technologies, 2003. 11. W. Yu, C. M. Tan, and G. Zhang. “Influence of superthin oxide layer on device fabricated on partial SOI substrate,” in Int. Conf. on Materials for Advanced Technologies, 2003. 12. W. Yu, J. Wei, C. M. Tan, S. Deng, and S. M. L. Nai. “Influence of applied load on wafer bonding in vacuum,” in Int. Conf. on Materials for Advanced Technologies, 2003.
Integrated Circuit Reliability
1. C. M. Tan and F. He. “3D electromigration modeling at circuit level (Invited Talk),” in Taiwan ESD and Reliability Conf., Hsinchu, Taiwan, 57th Nov. 2012. 2. C. M. Tan. “Physics of electromigration in today ULSI interconnections (Tutorial),” in Taiwan ESD and Reliability Conf., Hsinchu, Taiwan, 57th Nov. 2012. 3. S. Lan, C. M. Tan, and K. Wu. “Reliability study of LED driver  a case study of black box testing,” in 23rd European Symp. on Reliability of Electron Devices, Failure Physics and Analysis, Cagliari, Italy, 1st5th Oct. 2012. 4. F. He and C. M. Tan. “Effect of IC layout on the reliability of CMOS amplifiers,” presented at Int. Conf. on Materials for Advanced Technologies, Singapore, Jul. 2011. 5. C. M. Tan and F. He. “3D circuit model for 3D IC reliability study (invited),” in EuroSIME, 2009. 6. C. M. Tan and F. He. “Predicting Integrated Circuit Reliability from Wafer Fabrication Technology Reliability Data,” in Int. Symp. on Integrated Circuits, Singapore, 2007.
Failure Analysis
1. C. M. Tan, S. Yanuar, and T. C. Chai. “Finite element modeling of capacitive coupling voltage contrast,” in European Symp. on Reliability of Electron Devices, Failure physics and analysis, 2007. 2. C. M. Tan, Y. X. Tay, C. W. Goh, and T. C. Chai. “Mapping of solder mask covered interconnects on high density printed circuit board,” in Electronic Packaging and Technology Conf., 2006. 3. C. M. Tan, T. C. Chai, J. Lim, and K. P. Lim. “Nondestructive identification of open circuit in wiring on organic substrate with high wiring density covered with solder resist,” in European Symp. on Reliability of Electron Devices, Failure physics and Analysis, 2005. 4. K. P. Lim, J. Lim, C. M. Tan, and T. C. Chai. “Feasibility of capacitive coupling voltage contrast (CCVC) for the failure analysis of advanced printed circuit board,” in Symp. of Microelectronics, 2005. 5. C. M. Tan, Z. Gan, K. Prasad, and D. H. Zhang. “A novel technique to reconstruct three dimensional void in passivated metal interconnects,” in Materials Research Society Spring Meeting, 2003. 6. Z. Gan, C. M. Tan, K. Prasad, D. H. Zhang, and G. Zhang. “Novel rapid nondestructive technique for locating tiny voids in metallization line,” in Int. Microscopy and Microanalysis Conf., 2002.
Reliability Statistics
1. N. Raghavan and C. M. Tan. “Statistical modeling of via redundancy effects on interconnect reliability,” in IEEE Int. Conf. on Physical and Failure Analysis, 2008. 2. C. M. Tan and N. Raghavan. “An approach to statistical analysis of gate oxide breakdown mechanisms,” in European Symp. on Reliability of Electron Devices, Failure physics and analysis, 2007. 3. N. Raghavan and C. M. Tan. “Statistical analysis of multicensored electromigration data using the EM algorithm,” in Int. Symp. on physical and failure analysis of integrated circuits, 2007. 4. C. M. Tan, V. A. Anand, G. Zhang, A. Krishnamoorthy, and S. Mhaisalkar. “New analysis technique for time to failure data in copper electromigration,” in JEDEX Conf., 2005. 5. C. M. Tan. “Reliabiilty Analysis and Application with MATLAB (invited),” presented at Industrial seminar, May 2004. 6. C. M. Tan and K. N. C. Yeo. “Reliability statistics perspective on standard wafer level electromigration accelerated test (SWEAT),” in IEEE Canadian Conf. on Electrical and Computing Engineering, 2000, pp. 167172. 7. G. Zhang and C. M. Tan. “Selection of failure time within test time interval for group reliability data analysis,” in IEEE Canadian Conf. on Electrical and Computing Engineering, 2000, pp. 98102. 8. G. Zhang and C. M. Tan. “Reliability data analysis software development,” in IEEE Canadian Conf. on Electrical and Computing Engineering, 2000, pp. 107115.
LED Reliability
1. Cher Ming Tan and Preetpal Singh, “Exploring the humidity effect on the reliability of high power LEDs”, Invited talk in International Devices and Materials Symposium, Hualien, Taiwan 2014 2. Cher Ming Tan, “Extrapolation of lifetime of high power LED under temperaturehumidity conditions”, Invited talk in IEEE EDSSC, Chengdu, China, 2014 3. Lan Song and Cher Ming Tan, “Reliability Evaluation and Improvement for High Power LED Driver”, to be presented in International Conference on Materials for advanced Technologies, 2013 4. C. M. Tan. “Study of humidity reliability of solid state lighting (Invited Talk),” in LED Display and Lighting System Symp., Shenzhen, China, 1819th Jul. 2012. 5. S. H. Chen, C. M. Tan, and G. H. Tan. “Degradation behaviour of high power light emitting diode under high frequency switching,” in 23rd European Symp. on Reliability of Electron Devices, Failure Physics and Analysis, Cagliari, Italy, 1st5th Oct. 2012. 6. S. H. Chen, C. M. Tan, and E. Chen. “Ensuring Accuracy in Optical and Electrical Measurement of UltraBright LEDs during Reliability Test,” presented at Int. Conf. on Materials for Advanced Technologies, Singapore, Jan. 2011. 7. C. M. Tan, B. K. Chen, and M. Xiong. “Study of humidity reliability of high power LEDS (invited),” in IEEE Int. Conf. on SolidState and Integrated Circuit Technology, Shanghai, 2010, pp. 15921595. 8. C. M. Tan, B. K. Chen, R. Tew. “Humidity effect on the degradation of packaged ultrabright white LEDs,” in IEEE Electronics Packaging Technology Conf., 2008.
Quality
1. C. M. Tan and K. T. Lau. “Automated wafer defect map generation for process yield improvement,” in Int. Symp. on Integrated Circuits, Singapore, 2011. 2. C. M. Tan. “Identifying key parameters for risk based inspections (RBI) and failure mode effect analysis (FMEA) (invited),” presented at Int. Quality and Process control Conf., Bangkok, Jan. 2004. 3. T. K. Neo and C. M. Tan. “QFD implementation in a discrete semiconductor industry,” in IEEE Annual Reliability and Maintainability Symp., 2002, pp. 484489. 4. C. M. Tan and G. Zhang. “A new quality control parameter in wafer fabrication for wire bonding integrity,” in SPIE on Microelectronic Yield, Reliability and Advanced Packaging, 2000. 5. T. K. Neo and C. M. Tan. “Integrating device modeling in QFD implementation for power electronics applications,” in IEEE Canadian Conf. on Electrical and Computing Engineering, 2000, pp. 11871191. 6. C. M. Tan. “Computerization of quality control in electronics components industry,” in National Quality Management Conf., 1995.
Remanufacturing
1. F. He and C. M. Tan, “Monte Carlo simulation of fatigue crack initiation at elevated temperature,” in 13th Int. Conf. on Fracture, Beijing, China, 16th21st Jun. 2013.
Battery
1. Feng Leng, Cher Ming Tan, Raghavendra Arunachala, Andreas Jossen, “Real Time Monitoring and Characterizing of Liion Batteries Aging”, Advanced Energy Technology Congress, San Diego, USA, 2013 2. Feng Leng and Cher Ming Tan, “A methodology for studying the effect of overcharge on the safety of lithiumion batteries”, Invited talk, 5^{th} Annual Battery Safety Conference, Washington, USA
Others
1. Cher Ming Tan, “Product Reliability Assurance – The manifestation of the Core Values of Chinese Culture”, (invited talk) 2^{nd} Chinese Quality Forum, Hong Kong, 2014 2. J. Zhang, X. Y. Zhang, Z. L. Chen, K. Y. See, C. M. Tan, and S. S. Chen. “Onchip RF energy harvesting circuit for image sensor,” in Int. Symp. on Integrated Circuits, 2011, pp. 420423. 3. J. W. Zhang, L. B. Wang, K. Y. See, C. M. Tan, C. C. Boon, K. S. Yeo, and M. A. Do. “Wireless energy harvesting using serially connected voltage doublers,” in AsiaPacific Microwave Conf., Yokohama, Japan, 2010. 4. C. M. Tan, K. Y. See, J. W. Zhang, M. J. Xu, C. C. Boon, K. S. Yeo, and M. A. Do. “A possible reality on batteryless lowpower portable electronics,” in IEEE Conf. on Industrial Electronics and Applications, Taichung, Taiwan, 2010, pp. 630633. 5. Han, Z.J.; Shakerzadeh, M.; Tay, B.K.; Tan, C.M. “Protein immobilization on nanostructured surfaces with different wettability,” in 2010 IEEE 3rd International Nanoelectronics Conference (INEC 2010), p 1 pp., 2010 6. Y. Hou and C.M. Tan. “Transient electrical thermal analysis of ESD process using 3D finite element method,” in 12th IEEE Int. Symp. on Integrated Circuits, Singapore, 2009. 7. C. M. Tan, E. Q. Kuan, and R. Cai. “The influence of Nano TiO_{2} film thickness on its photocatalytic and hydrophilic properties,” presented at Advanced Materials for Nanotechnology, New Zealand, May 2009. 8. C. M. Tan. “Extending the useful life of solar cell through Nano TiO_{2} film coating,” presented at Advanced Materials for Nanotechnology, New Zealand, May 2009. 9. C. M. Tan, L. Sun, and C. Wang. “Going green for discrete power diode manufacturing,” presented at IEEE ICIEA2009, Xi'an, China. 10. I. V. McLoughlin, A. M. Prakash, S. Shukla, S. H. Tan, K. Arichandran, C. M. Tan, V. S. Sawant, and R. K. Manchanda. “Use of high altitude balloon platforms for small satellite testing,” in IEEE Int. Workshop on Digital infoTainment and Visualization, 2008, pp. 15. 11. C. M. Tan, L. Sun, N. Raghavan, G. Huang, C. Hsu, and C. Wang. “The physical limit and manufacturability of power diode with carrier lifetime control,” in Int. Conf. on industrial electronics and applications, 2007. 12. N. Raghavan, N. Hwang, and C. M. Tan. “A comprehensive semiempirical mobility model for strainedSi NMOSFETs,” in 8th Int. Conf. on SolidState and Integrated Circuit Technology, 2006, pp. 139142. 13. C. M. Tan and Z. Gan. “Building empirical model through simulation a case study,” in Int. Conf. on Engineering Management, 2004, pp. 10901094. 14. C. M. Tan, Y. H. Sng, and H. K. Tang “Industryuniversity R&D collaboration: expectation and reality,” in Int. Conf. on Engineering Management, 2004, pp. 626629. 15. Z. L. Yuan, D. H. Zhang, C. Y. Li, K. Prasad, L. J. Tang, C. M. Tan, R. Kumar, and P.D. Foo. “Study of interaction between aTa films and SiO_{2} under rapid thermal annealing,” in Int. Conf. on Materials for Advanced Technologies, 2003. 16. K. Prasad, X. L. Yuan, C. M. Tan, D. H. Zhang, C. Y. Li, S. R. Wang, S. Y. J. Yuan, J. L. Xie, D. Gui, and P. D. Foo. “Diffusion studies of Cu in Si and lowk dielectric materials,” in Materials Research Society Spring Meeting, 2002. 17. S. Zukotynski, F. Gaspari, N. Kherani, T. Kosteski, K. Law, W. T. Shmayda, and C. M. Tan. “Metastability in tritiated amorphous silicon,” in 19th Int. Conf. on Amorphous and Microcrystalline Semiconductors Science & Technology, 2001. 18. K. Prasad, D. H. Zhang, C. M. Tan. “Backside copper contamination issues in CMOS integrated circuits,” in Int. workshop on physics of semiconductor devices, 2001. 19. S. W. Loh, D. H. Zhang, C. Y. Li, R. Liu, A. T. S. Wee, K. Prasad, C. M. Tan, Y. K. Lee, P. D. Foo, and J. Xie. “Effects of a thin flash layer on the diffusion of Cu, Ta, Si, and O in the Cu/TaN/SiO2/Si structures,” in Int. Semiconductor Technology Conf., 2001, pp. 116122. 瀏覽數
