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長庚大學 電子工程學系
勤勞樸實 追求卓越
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張睿達教授

張睿達

教授

張睿達副教授

組別

奈米元件及製程

電話

5782

Email

crd@mail.cgu.edu.tw

實驗室

材料分析實驗室(工學院8樓E0820)

學歷

  • 美國德州大學奧斯汀分校電機工程博士 ( 1998/8 )
  • 國立交通大學電子工程碩士 ( 1990/6 )
  • 國立成功大學材料工程學士 ( 1988/6 )

經歷

  • 長庚大學電子系教授 (2016-)
  • 長庚大學電子系副教授 ( 2009- 2016)
  • 長庚大學助理教授 ( 1998 - 2009 )
  • 世界先進積體電路公司資深工程師 ( 1994 - 1995 )
  • 工業技術研究院電子工業研究所元件工程師 ( 1990 - 1994 )

開授課程

98學年度第二學期

  • 半導體元件設計
  • 半導體實驗
  • 半導體製程及元件模擬

99學年度第一學期

  • 計算機概論
  • 半導體實驗
  • 材料結構及特性分析

專長與研究領域

  • 積體電路製程模擬
  • 半導體元件設計
  • 材料分析

簡歷

Chang, Ruey-Dar received the B.S. degree in materials engineering from National Cheng Kung University, Tainan Taiwan, the M.S. degree from the Institute of Electronics, National Chiao Tung Uniersity, Hsinchu Taiwan, and Ph.D. degree in electrical engineering from the University of Texas at Austin in 1988, 1990, and 1998, respectively.

From 1990 to 1994, he was with the Electronics Research and Service Organization/Industrial Technology Research Institute (ERSO/ITRI - 工研院電子所), Hsinchu, where he was engaged in the development of process simulation and DRAM devices under the Submicron Project (次微米計畫).In 1994, he joined the Vanguard International Semiconductor Corporation (世界先進積體電路), Hsinchu, where he was responsible for DRAM device design and TCAD.

Since 1998, he has been with the Department of Electronics Engineering, Chang Gung University (長庚大學), Taoyuan, Taiwan, where he is an Associate Professor.  He currently works on CMOS process modeling, doping profile characterization, TFT technology modeling and power devices.

著作列表

Journal articles & book chapters:
  1. R. D. Chang*, Y. T. Ling, T. Liu, J. R. Tsai, and C. C. Ma, “Diffusion of indium implanted in silicon oxides”, Jpn. J. Appl. Phys. Vol. 48, p. 056501, 2009. 
  2. R. D. Chang* and J. R. Tsai, “Loss of phosphorus due to interface segregation at Si/SiO2 interfaces: Experiment and modeling”, J. Appl. Phys. Vol. 103, p. 053517, 2008.
  3. R. D. Chang*, J. R. Tsai, and L. W. Ho, "Elucidating the mechanism of transient loss of phosphorus due to interface segregation", Appl. Phys. Lett. Vol. 88, p. 211914, 2006.

Conference & proceeding papers:

  1. Ruey-Dar Chang, Jung-Ruey Tsai, and Chia-Chi Ma, “Time evolution of phosphorus dose loss due to interface segregation”, IEEE International conference on advanced thermal processing of semiconductors, Albany, NY, 2009.
  2. J. R. Tsai, L. W. Ho, S. H. Lin, T. C. Chang, M. D. Shieh, H. C. Lin, J. P. Lin, W. S. Feng, and R. D. Chang, "Transient behavior of phosphorus dose loss and modeling of dopant segregation at the Si/SiO2 interface", International Electron Device Meeting (IEDM), San Francisco, CA, 2004.

 

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